DE69402024D1 - Verfahren zur Herstellung eines Diamanthalbleiters - Google Patents

Verfahren zur Herstellung eines Diamanthalbleiters

Info

Publication number
DE69402024D1
DE69402024D1 DE69402024T DE69402024T DE69402024D1 DE 69402024 D1 DE69402024 D1 DE 69402024D1 DE 69402024 T DE69402024 T DE 69402024T DE 69402024 T DE69402024 T DE 69402024T DE 69402024 D1 DE69402024 D1 DE 69402024D1
Authority
DE
Germany
Prior art keywords
production
diamond semiconductor
diamond
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69402024T
Other languages
English (en)
Other versions
DE69402024T2 (de
Inventor
Junichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69402024D1 publication Critical patent/DE69402024D1/de
Application granted granted Critical
Publication of DE69402024T2 publication Critical patent/DE69402024T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1602—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/041—Making n- or p-doped regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69402024T 1993-09-30 1994-09-30 Verfahren zur Herstellung eines Diamanthalbleiters Expired - Fee Related DE69402024T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26839193A JP3334286B2 (ja) 1993-09-30 1993-09-30 ダイアモンド半導体の製造方法

Publications (2)

Publication Number Publication Date
DE69402024D1 true DE69402024D1 (de) 1997-04-17
DE69402024T2 DE69402024T2 (de) 1997-10-02

Family

ID=17457827

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69402024T Expired - Fee Related DE69402024T2 (de) 1993-09-30 1994-09-30 Verfahren zur Herstellung eines Diamanthalbleiters

Country Status (4)

Country Link
US (1) US5508208A (de)
EP (1) EP0646968B1 (de)
JP (1) JP3334286B2 (de)
DE (1) DE69402024T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5863831A (en) * 1995-08-14 1999-01-26 Advanced Materials Engineering Research, Inc. Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility
US6452338B1 (en) 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
FR2848335B1 (fr) * 2002-12-06 2005-10-07 Centre Nat Rech Scient Procede d'elaboration de diamant de type n a haute conductivite electrique
JP2004214264A (ja) * 2002-12-27 2004-07-29 Sumitomo Electric Ind Ltd 低抵抗ｎ型半導体ダイヤモンドおよびその製造方法
KR20060096177A (ko) * 2003-10-29 2006-09-08 스미토모덴키고교가부시키가이샤 ｎ형 반도체 다이아몬드의 제조 방법 및 ｎ형 반도체 다이아몬드
JP2005132648A (ja) * 2003-10-29 2005-05-26 Sumitomo Electric Ind Ltd ｎ型半導体ダイヤモンドの製造方法及びｎ型半導体ダイヤモンド
WO2008089147A2 (en) 2007-01-15 2008-07-24 Cha Corporation Microwave induced destruction of siloxanes and hydrogen sulfide in biogas
US7641874B2 (en) * 2007-01-15 2010-01-05 Cha Corporation Microwave induced destruction of impurities from biogas and nitrogen oxides from engine exhaust
WO2008123391A2 (en) * 2007-03-23 2008-10-16 Panasonic Corporation Apparatus and method for plasma doping
JP2023157126A (ja) * 2022-04-14 2023-10-26 国立研究開発法人理化学研究所 不純物ドープ半導体の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS604174A (ja) * 1983-06-22 1985-01-10 Toyo Soda Mfg Co Ltd 核酸塩基およびヌクレオシドとヌクレオチドの分離方法
US4571447A (en) * 1983-06-24 1986-02-18 Prins Johan F Photovoltaic cell of semi-conducting diamond
DE3818719C2 (de) * 1987-06-02 2000-03-23 Sumitomo Electric Industries Halbleitender Diamant vom n-Typ und Verfahren zu dessen Herstellung
US4778561A (en) * 1987-10-30 1988-10-18 Veeco Instruments, Inc. Electron cyclotron resonance plasma source
JPH03205398A (ja) * 1989-12-30 1991-09-06 Canon Inc ダイヤモンドの製造方法
EP0445754B1 (de) * 1990-03-06 1996-02-14 Sumitomo Electric Industries, Ltd. Verfahren zum Aufwachsen einer Dünnschicht aus Diamant oder c-BN
US5099296A (en) * 1990-04-06 1992-03-24 Xerox Corporation Thin film transistor
JPH04174517A (ja) * 1990-11-07 1992-06-22 Canon Inc ダイヤモンド半導体の製造方法
JPH04175295A (ja) * 1990-11-07 1992-06-23 Canon Inc 半導体ダイヤモンドの製造方法
JP2836790B2 (ja) * 1991-01-08 1998-12-14 株式会社神戸製鋼所 ダイヤモンド薄膜へのオーミック電極形成方法
JPH04266020A (ja) * 1991-02-20 1992-09-22 Semiconductor Energy Lab Co Ltd 半導体ダイヤモンド
EP0543392A3 (en) * 1991-11-21 1993-10-20 Canon Kk Diamond semiconductor device and method of producing the same

Also Published As

Publication number Publication date
US5508208A (en) 1996-04-16
JP3334286B2 (ja) 2002-10-15
EP0646968A1 (de) 1995-04-05
JPH07106266A (ja) 1995-04-21
EP0646968B1 (de) 1997-03-12
DE69402024T2 (de) 1997-10-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee