FR2848335B1 - Procede d'elaboration de diamant de type n a haute conductivite electrique - Google Patents

Procede d'elaboration de diamant de type n a haute conductivite electrique

Info

Publication number
FR2848335B1
FR2848335B1 FR0215453A FR0215453A FR2848335B1 FR 2848335 B1 FR2848335 B1 FR 2848335B1 FR 0215453 A FR0215453 A FR 0215453A FR 0215453 A FR0215453 A FR 0215453A FR 2848335 B1 FR2848335 B1 FR 2848335B1
Authority
FR
France
Prior art keywords
diamond
conductivity
preparation
type
type diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0215453A
Other languages
English (en)
Other versions
FR2848335A1 (fr
Inventor
Jacques Paul Marie Chevallier
Zepherin Symplice Teukam
Dominique Ballutaud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
VERSAILLES ST QUENTIN EN, University of
Centre National de la Recherche Scientifique CNRS
Universite de Versailles Saint Quentin en Yvelines
Original Assignee
VERSAILLES ST QUENTIN EN, University of
Centre National de la Recherche Scientifique CNRS
Universite de Versailles Saint Quentin en Yvelines
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by VERSAILLES ST QUENTIN EN, University of, Centre National de la Recherche Scientifique CNRS, Universite de Versailles Saint Quentin en Yvelines filed Critical VERSAILLES ST QUENTIN EN, University of
Priority to FR0215453A priority Critical patent/FR2848335B1/fr
Priority to AU2003298415A priority patent/AU2003298415A1/en
Priority to JP2004558172A priority patent/JP4823523B2/ja
Priority to PCT/FR2003/003592 priority patent/WO2004053960A1/fr
Priority to EP03796163A priority patent/EP1568072A1/fr
Publication of FR2848335A1 publication Critical patent/FR2848335A1/fr
Priority to US11/144,279 priority patent/US7368317B2/en
Application granted granted Critical
Publication of FR2848335B1 publication Critical patent/FR2848335B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/041—Making n- or p-doped regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
FR0215453A 2002-12-06 2002-12-06 Procede d'elaboration de diamant de type n a haute conductivite electrique Expired - Fee Related FR2848335B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR0215453A FR2848335B1 (fr) 2002-12-06 2002-12-06 Procede d'elaboration de diamant de type n a haute conductivite electrique
AU2003298415A AU2003298415A1 (en) 2002-12-06 2003-12-04 Method of producing an n-type diamond with high electrical conductivity
JP2004558172A JP4823523B2 (ja) 2002-12-06 2003-12-04 高い電気伝導率を有するｎ−型ダイヤモンドを製造する方法
PCT/FR2003/003592 WO2004053960A1 (fr) 2002-12-06 2003-12-04 Procede d'elaboration de diamant de type n a haute conductivite electrique
EP03796163A EP1568072A1 (fr) 2002-12-06 2003-12-04 Procede d elaboration de diamant de type n a haute conductiv ite electrique
US11/144,279 US7368317B2 (en) 2002-12-06 2005-06-03 Method of producing an N-type diamond with high electrical conductivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0215453A FR2848335B1 (fr) 2002-12-06 2002-12-06 Procede d'elaboration de diamant de type n a haute conductivite electrique

Publications (2)

Publication Number Publication Date
FR2848335A1 FR2848335A1 (fr) 2004-06-11
FR2848335B1 true FR2848335B1 (fr) 2005-10-07

Family

ID=32320061

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0215453A Expired - Fee Related FR2848335B1 (fr) 2002-12-06 2002-12-06 Procede d'elaboration de diamant de type n a haute conductivite electrique

Country Status (6)

Country Link
US (1) US7368317B2 (fr)
EP (1) EP1568072A1 (fr)
JP (1) JP4823523B2 (fr)
AU (1) AU2003298415A1 (fr)
FR (1) FR2848335B1 (fr)
WO (1) WO2004053960A1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ301547B6 (cs) * 2008-08-29 2010-04-14 Fyzikální ústav AV CR, v.v.i. Zpusob dopování diamantu prenosem náboje z organických barviv
US8111724B2 (en) * 2009-07-07 2012-02-07 International Business Machines Corporation Temperature control device for optoelectronic devices
SG179318A1 (en) * 2010-09-27 2012-04-27 Gemesis Company S Pte Ltd Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system
GB201021860D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for diamond synthesis
GB201021870D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021913D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave plasma reactors and substrates for synthetic diamond manufacture
GB201021853D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
US9637838B2 (en) 2010-12-23 2017-05-02 Element Six Limited Methods of manufacturing synthetic diamond material by microwave plasma enhanced chemical vapor deposition from a microwave generator and gas inlet(s) disposed opposite the growth surface area
GB201021855D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave power delivery system for plasma reactors
GB201021865D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
US20130026492A1 (en) * 2011-07-30 2013-01-31 Akhan Technologies Inc. Diamond Semiconductor System and Method
US8933462B2 (en) 2011-12-21 2015-01-13 Akhan Semiconductor, Inc. Method of fabricating diamond semiconductor and diamond semiconductor formed according to the method
SG10201505413VA (en) 2015-01-14 2016-08-30 Iia Technologies Pte Ltd Electronic device grade single crystal diamonds and method of producing the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0543392A3 (en) * 1991-11-21 1993-10-20 Canon Kk Diamond semiconductor device and method of producing the same
JPH05139889A (ja) * 1991-11-21 1993-06-08 Canon Inc ダイヤモンド結晶
JP3165536B2 (ja) * 1992-11-12 2001-05-14 松下電器産業株式会社 半導体ダイヤモンドの形成方法及び装置
JP3334286B2 (ja) * 1993-09-30 2002-10-15 ソニー株式会社 ダイアモンド半導体の製造方法
JP3232470B2 (ja) 1995-07-02 2001-11-26 科学技術振興事業団 水素化アモルファスカーボンを用いた単結晶ダイヤモンドの合成法
US5653800A (en) * 1995-08-03 1997-08-05 Eneco, Inc. Method for producing N-type semiconducting diamond
JP3893710B2 (ja) 1997-02-12 2007-03-14 東レ株式会社 オイル薄膜の形成方法およびその薄膜を用いた蒸着製品の製造方法
JPH10247624A (ja) 1997-03-05 1998-09-14 Asahi Chem Ind Co Ltd ｎ型単結晶ダイヤモンドおよびその製造方法、人工ダイヤモンドの製造方法
JP3568394B2 (ja) * 1998-07-07 2004-09-22 独立行政法人 科学技術振興機構 低抵抗ｎ型ダイヤモンドの合成法

Also Published As

Publication number Publication date
AU2003298415A8 (en) 2004-06-30
US7368317B2 (en) 2008-05-06
FR2848335A1 (fr) 2004-06-11
WO2004053960A1 (fr) 2004-06-24
JP2006508887A (ja) 2006-03-16
US20050266606A1 (en) 2005-12-01
AU2003298415A1 (en) 2004-06-30
JP4823523B2 (ja) 2011-11-24
EP1568072A1 (fr) 2005-08-31

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Legal Events

Date Code Title Description
TQ Partial transmission of property
ST Notification of lapse

Effective date: 20140829