FR2843061B1 - Procede de polissage de tranche de materiau - Google Patents

Procede de polissage de tranche de materiau

Info

Publication number
FR2843061B1
FR2843061B1 FR0209869A FR0209869A FR2843061B1 FR 2843061 B1 FR2843061 B1 FR 2843061B1 FR 0209869 A FR0209869 A FR 0209869A FR 0209869 A FR0209869 A FR 0209869A FR 2843061 B1 FR2843061 B1 FR 2843061B1
Authority
FR
France
Prior art keywords
polishing process
wafer polishing
material wafer
wafer
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0209869A
Other languages
English (en)
Other versions
FR2843061A1 (fr
Inventor
Claire Richtarch
Fabrice Letertre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0209869A priority Critical patent/FR2843061B1/fr
Priority to US10/621,358 priority patent/US20040055998A1/en
Priority to AU2003253208A priority patent/AU2003253208A1/en
Priority to PCT/IB2003/003738 priority patent/WO2004014607A1/fr
Priority to JP2004527237A priority patent/JP2005534516A/ja
Priority to EP03784424A priority patent/EP1536918A1/fr
Priority to TW092121072A priority patent/TWI283021B/zh
Publication of FR2843061A1 publication Critical patent/FR2843061A1/fr
Application granted granted Critical
Publication of FR2843061B1 publication Critical patent/FR2843061B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
FR0209869A 2002-08-02 2002-08-02 Procede de polissage de tranche de materiau Expired - Fee Related FR2843061B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0209869A FR2843061B1 (fr) 2002-08-02 2002-08-02 Procede de polissage de tranche de materiau
US10/621,358 US20040055998A1 (en) 2002-08-02 2003-07-18 Method for providing a smooth wafer surface
PCT/IB2003/003738 WO2004014607A1 (fr) 2002-08-02 2003-07-30 Procede de polissage d'une tranche de materiau
JP2004527237A JP2005534516A (ja) 2002-08-02 2003-07-30 ウエハ材の研磨方法
AU2003253208A AU2003253208A1 (en) 2002-08-02 2003-07-30 A method of polishing a wafer of material
EP03784424A EP1536918A1 (fr) 2002-08-02 2003-07-30 Procede de polissage d'une tranche de materiau
TW092121072A TWI283021B (en) 2002-08-02 2003-08-01 A method of polishing a wafer of material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0209869A FR2843061B1 (fr) 2002-08-02 2002-08-02 Procede de polissage de tranche de materiau

Publications (2)

Publication Number Publication Date
FR2843061A1 FR2843061A1 (fr) 2004-02-06
FR2843061B1 true FR2843061B1 (fr) 2004-09-24

Family

ID=30129648

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0209869A Expired - Fee Related FR2843061B1 (fr) 2002-08-02 2002-08-02 Procede de polissage de tranche de materiau

Country Status (7)

Country Link
US (1) US20040055998A1 (fr)
EP (1) EP1536918A1 (fr)
JP (1) JP2005534516A (fr)
AU (1) AU2003253208A1 (fr)
FR (1) FR2843061B1 (fr)
TW (1) TWI283021B (fr)
WO (1) WO2004014607A1 (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6080580A (en) * 1998-10-05 2000-06-27 Isis Pharmaceuticals Inc. Antisense oligonucleotide modulation of tumor necrosis factor-α (TNF-α) expression
US6228642B1 (en) 1998-10-05 2001-05-08 Isis Pharmaceuticals, Inc. Antisense oligonucleotide modulation of tumor necrosis factor-(α) (TNF-α) expression
FR2857895B1 (fr) 2003-07-23 2007-01-26 Soitec Silicon On Insulator Procede de preparation de surface epiready sur films minces de sic
DE102004010379A1 (de) * 2004-03-03 2005-09-22 Schott Ag Verfahren zur Herstellung von Wafern mit defektarmen Oberflächen, die Verwendung solcher Wafer und damit erhaltene elektronische Bauteile
JP5116305B2 (ja) * 2004-05-11 2013-01-09 ニッタ・ハース株式会社 研磨組成物および基板の研磨方法
JP4752214B2 (ja) * 2004-08-20 2011-08-17 住友電気工業株式会社 エピタキシャル層形成用ＡｌＮ結晶の表面処理方法
TWI327761B (en) 2005-10-07 2010-07-21 Rohm & Haas Elect Mat Method for making semiconductor wafer and wafer holding article
SG188090A1 (en) * 2008-02-01 2013-03-28 Fujimi Inc Polishing composition and polishing method using the same
JP2011049610A (ja) * 2010-12-10 2011-03-10 Sumitomo Electric Ind Ltd ＡｌＮ結晶の表面処理方法、ＡｌＮ結晶基板、エピタキシャル層付ＡｌＮ結晶基板および半導体デバイス
FR2977069B1 (fr) 2011-06-23 2014-02-07 Soitec Silicon On Insulator Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP6694745B2 (ja) * 2016-03-31 2020-05-20 株式会社フジミインコーポレーテッド 研磨用組成物
TWI680168B (zh) * 2017-10-18 2019-12-21 環球晶圓股份有限公司 碳化矽晶片

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5149338A (en) * 1991-07-22 1992-09-22 Fulton Kenneth W Superpolishing agent, process for polishing hard ceramic materials, and polished hard ceramics
US5904159A (en) * 1995-11-10 1999-05-18 Tokuyama Corporation Polishing slurries and a process for the production thereof
US5895583A (en) * 1996-11-20 1999-04-20 Northrop Grumman Corporation Method of preparing silicon carbide wafers for epitaxial growth
US6103599A (en) * 1997-07-25 2000-08-15 Silicon Genesis Corporation Planarizing technique for multilayered substrates
US6497763B2 (en) * 2001-01-19 2002-12-24 The United States Of America As Represented By The Secretary Of The Navy Electronic device with composite substrate
DE60211190T2 (de) * 2001-10-12 2006-10-26 Siltronic Ag Verfahren zur herstellung einer halbleiter-schichtstruktur und entsprechende struktur

Also Published As

Publication number Publication date
FR2843061A1 (fr) 2004-02-06
WO2004014607A1 (fr) 2004-02-19
EP1536918A1 (fr) 2005-06-08
US20040055998A1 (en) 2004-03-25
JP2005534516A (ja) 2005-11-17
TW200411754A (en) 2004-07-01
TWI283021B (en) 2007-06-21
AU2003253208A1 (en) 2004-02-25

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100430