DE69301035T2 - Verfahren zur Herstellung eines Silizium-Einkristalls - Google Patents
Verfahren zur Herstellung eines Silizium-EinkristallsInfo
- Publication number
- DE69301035T2 DE69301035T2 DE69301035T DE69301035T DE69301035T2 DE 69301035 T2 DE69301035 T2 DE 69301035T2 DE 69301035 T DE69301035 T DE 69301035T DE 69301035 T DE69301035 T DE 69301035T DE 69301035 T2 DE69301035 T2 DE 69301035T2
- Authority
- DE
- Germany
- Prior art keywords
- production
- single crystal
- silicon single
- silicon
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4038394A JP2506525B2 (ja) | 1992-01-30 | 1992-01-30 | シリコン単結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69301035D1 DE69301035D1 (de) | 1996-02-01 |
DE69301035T2 true DE69301035T2 (de) | 1996-05-02 |
Family
ID=12524074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69301035T Expired - Fee Related DE69301035T2 (de) | 1992-01-30 | 1993-01-28 | Verfahren zur Herstellung eines Silizium-Einkristalls |
Country Status (4)
Country | Link |
---|---|
US (1) | US5340434A (de) |
EP (1) | EP0555010B1 (de) |
JP (1) | JP2506525B2 (de) |
DE (1) | DE69301035T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5588993A (en) * | 1995-07-25 | 1996-12-31 | Memc Electronic Materials, Inc. | Method for preparing molten silicon melt from polycrystalline silicon charge |
US5814148A (en) * | 1996-02-01 | 1998-09-29 | Memc Electronic Materials, Inc. | Method for preparing molten silicon melt from polycrystalline silicon charge |
US5919303A (en) * | 1997-10-16 | 1999-07-06 | Memc Electronic Materials, Inc. | Process for preparing a silicon melt from a polysilicon charge |
US6284040B1 (en) * | 1999-01-13 | 2001-09-04 | Memc Electronic Materials, Inc. | Process of stacking and melting polycrystalline silicon for high quality single crystal production |
JP2006315869A (ja) * | 2005-05-10 | 2006-11-24 | Sumco Corp | 窒素ドープシリコン単結晶の製造方法 |
JP4604889B2 (ja) * | 2005-05-25 | 2011-01-05 | 株式会社Sumco | シリコンウェーハの製造方法、並びにシリコン単結晶育成方法 |
DE102011002598B4 (de) * | 2011-01-12 | 2016-10-06 | Solarworld Innovations Gmbh | Verfahren zur Herstellung eines Silizium-Ingots |
DE102015106979B4 (de) * | 2015-05-05 | 2023-01-12 | Infineon Technologies Austria Ag | Halbleiterwafer und Verfahren zum Herstellen von Halbleitervorrichtungen in einem Halbleiterwafer |
WO2017062949A1 (en) * | 2015-10-10 | 2017-04-13 | Sunedison, Inc. | System and method for degassing granular polysilicon |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1306407C (en) * | 1987-06-08 | 1992-08-18 | Michio Kida | Apparatus for growing crystals of semiconductor materials |
JPH0633218B2 (ja) * | 1987-12-08 | 1994-05-02 | 日本鋼管株式会社 | シリコン単結晶の製造装置 |
JPH01282194A (ja) * | 1988-01-19 | 1989-11-14 | Osaka Titanium Co Ltd | 単結晶製造方法 |
US5037503A (en) * | 1988-05-31 | 1991-08-06 | Osaka Titanium Co., Ltd. | Method for growing silicon single crystal |
CA1340189C (en) * | 1988-10-11 | 1998-12-15 | Albemarle Corporation | Polysilicon with diminished hydrogen content |
JPH0676274B2 (ja) * | 1988-11-11 | 1994-09-28 | 東芝セラミックス株式会社 | シリコン単結晶の製造装置 |
DE68908872T2 (de) * | 1989-02-03 | 1994-02-10 | Mitsubishi Metal Corp | Verfahren zum Ziehen von Einkristallen. |
JP2672667B2 (ja) * | 1989-08-28 | 1997-11-05 | 株式会社東芝 | 半導体単結晶の引上方法及びその装置 |
CA2038175A1 (en) * | 1990-04-02 | 1991-10-03 | Albemarle Corporation | Polysilicon and process therefor |
DE4106589C2 (de) * | 1991-03-01 | 1997-04-24 | Wacker Siltronic Halbleitermat | Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski |
-
1992
- 1992-01-30 JP JP4038394A patent/JP2506525B2/ja not_active Expired - Lifetime
-
1993
- 1993-01-28 DE DE69301035T patent/DE69301035T2/de not_active Expired - Fee Related
- 1993-01-28 EP EP93300615A patent/EP0555010B1/de not_active Expired - Lifetime
- 1993-02-01 US US08/011,744 patent/US5340434A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH05208889A (ja) | 1993-08-20 |
DE69301035D1 (de) | 1996-02-01 |
EP0555010B1 (de) | 1995-12-20 |
JP2506525B2 (ja) | 1996-06-12 |
US5340434A (en) | 1994-08-23 |
EP0555010A1 (de) | 1993-08-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |