DE69015983D1 - Verfahren zur Ziehung eines Siliciumeinkristalles. - Google Patents

Verfahren zur Ziehung eines Siliciumeinkristalles.

Info

Publication number
DE69015983D1
DE69015983D1 DE69015983T DE69015983T DE69015983D1 DE 69015983 D1 DE69015983 D1 DE 69015983D1 DE 69015983 T DE69015983 T DE 69015983T DE 69015983 T DE69015983 T DE 69015983T DE 69015983 D1 DE69015983 D1 DE 69015983D1
Authority
DE
Germany
Prior art keywords
pulling
single crystal
silicon single
silicon
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69015983T
Other languages
English (en)
Other versions
DE69015983T2 (de
Inventor
Yoshihiro Kodama
Tetsuya Ishidaira
Koji Kanno
Shinichi Furuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69015983D1 publication Critical patent/DE69015983D1/de
Application granted granted Critical
Publication of DE69015983T2 publication Critical patent/DE69015983T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE1990615983 1989-10-23 1990-10-23 Verfahren zur Ziehung eines Siliciumeinkristalles. Expired - Fee Related DE69015983T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27648189A JPH0699225B2 (ja) 1989-10-23 1989-10-23 シリコン単結晶引上げ方法

Publications (2)

Publication Number Publication Date
DE69015983D1 true DE69015983D1 (de) 1995-02-23
DE69015983T2 DE69015983T2 (de) 1995-08-10

Family

ID=17570055

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990615983 Expired - Fee Related DE69015983T2 (de) 1989-10-23 1990-10-23 Verfahren zur Ziehung eines Siliciumeinkristalles.

Country Status (3)

Country Link
EP (1) EP0429847B1 (de)
JP (1) JPH0699225B2 (de)
DE (1) DE69015983T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5593498A (en) * 1995-06-09 1997-01-14 Memc Electronic Materials, Inc. Apparatus for rotating a crucible of a crystal pulling machine
JP3898247B2 (ja) * 1995-12-06 2007-03-28 信越半導体株式会社 単結晶の製造装置および製造方法
US5902394A (en) * 1997-03-31 1999-05-11 Seh America, Inc. Oscillating crucible for stabilization of Czochralski (CZ) silicon melt
KR100764394B1 (ko) * 2002-11-12 2007-10-05 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 도가니 회전을 이용하여 온도 구배를 제어하는 단결정 실리콘의 제조 방법
JP6786905B2 (ja) 2016-06-27 2020-11-18 株式会社Sumco シリコン単結晶の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2758888C2 (de) * 1977-12-30 1983-09-22 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung reinster Siliciumeinkristalle
EP0055619B1 (de) * 1980-12-29 1985-05-29 Monsanto Company Verfahren zur Regelung der Konzentration und Distribution von Sauerstoff in Silizium, gezüchtet nach der Czochralskimethode

Also Published As

Publication number Publication date
DE69015983T2 (de) 1995-08-10
JPH0699225B2 (ja) 1994-12-07
EP0429847A1 (de) 1991-06-05
EP0429847B1 (de) 1995-01-11
JPH03137090A (ja) 1991-06-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee