ATA289086A - Vorrichtung zur herstellung eines silizium-einkristalls - Google Patents

Vorrichtung zur herstellung eines silizium-einkristalls

Info

Publication number
ATA289086A
ATA289086A AT0289086A AT289086A ATA289086A AT A289086 A ATA289086 A AT A289086A AT 0289086 A AT0289086 A AT 0289086A AT 289086 A AT289086 A AT 289086A AT A289086 A ATA289086 A AT A289086A
Authority
AT
Austria
Prior art keywords
producing
silicon crystal
silicon
crystal
Prior art date
Application number
AT0289086A
Other languages
English (en)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of ATA289086A publication Critical patent/ATA289086A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
AT0289086A 1985-10-31 1986-10-30 Vorrichtung zur herstellung eines silizium-einkristalls ATA289086A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60244562A JPS62105998A (ja) 1985-10-31 1985-10-31 シリコン基板の製法

Publications (1)

Publication Number Publication Date
ATA289086A true ATA289086A (de) 1996-01-15

Family

ID=17120560

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0289086A ATA289086A (de) 1985-10-31 1986-10-30 Vorrichtung zur herstellung eines silizium-einkristalls

Country Status (14)

Country Link
JP (1) JPS62105998A (de)
KR (1) KR870004498A (de)
CN (1) CN1016191B (de)
AT (1) ATA289086A (de)
AU (1) AU597599B2 (de)
CA (1) CA1336061C (de)
DE (1) DE3637006A1 (de)
DK (1) DK518486A (de)
FR (1) FR2589489B1 (de)
GB (1) GB2182262B (de)
IT (1) IT1198454B (de)
MY (1) MY100449A (de)
NL (1) NL8602738A (de)
SE (1) SE8604627L (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
JP2613498B2 (ja) * 1991-03-15 1997-05-28 信越半導体株式会社 Ｓｉ単結晶ウエーハの熱処理方法
JPH07247197A (ja) * 1994-03-09 1995-09-26 Fujitsu Ltd 半導体装置とその製造方法
JP3443822B2 (ja) * 1996-03-27 2003-09-08 信越半導体株式会社 シリコン単結晶の製造方法
DE19711922A1 (de) * 1997-03-21 1998-09-24 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zum Ziehen eines Einkristalls
US6379642B1 (en) 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
KR20050049561A (ko) 1997-04-09 2005-05-25 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 저결함 밀도의 실리콘 웨이퍼 및 잉곳
DE69806369T2 (de) 1997-04-09 2003-07-10 Memc Electronic Materials, Inc. Silicium mit niedriger fehlerdichte und idealem sauerstoffniederschlag
JPH11268987A (ja) * 1998-03-20 1999-10-05 Shin Etsu Handotai Co Ltd シリコン単結晶およびその製造方法
CN1326518A (zh) 1998-06-26 2001-12-12 Memc电子材料有限公司 任意大直径无缺陷硅晶体的生长方法
WO2000013211A2 (en) 1998-09-02 2000-03-09 Memc Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
JP4875800B2 (ja) 1998-10-14 2012-02-15 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 単結晶シリコンウエハの製造方法
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
US6284039B1 (en) 1998-10-14 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafers substantially free of grown-in defects
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
EP1356139B1 (de) 2001-01-26 2006-08-09 MEMC Electronic Materials, Inc. Silizium mit niedriger defektdichte und mit leerstellendominiertem kern, das im wesentlichen frei von oxidationsinduzierten stapelfehlern ist
DE10103691A1 (de) * 2001-01-26 2002-08-08 Crystal Growing Systems Gmbh Elektrische Energieversorgung für eine elektrische Heizung
CN101490314B (zh) 2006-05-19 2013-06-12 Memc电子材料有限公司 控制cz生长过程中由硅单晶侧面诱发的附聚点缺陷和氧簇的形成
JP5974978B2 (ja) 2013-05-29 2016-08-23 信越半導体株式会社 シリコン単結晶製造方法
CN105780113B (zh) * 2016-03-10 2017-11-28 江西赛维Ldk太阳能高科技有限公司 一种表征晶体硅生长界面和生长速度的方法
CN112095154B (zh) * 2019-06-18 2021-05-14 上海新昇半导体科技有限公司 一种半导体晶体生长装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5556098A (en) * 1978-10-17 1980-04-24 Chiyou Lsi Gijutsu Kenkyu Kumiai Method and apparatus for producing si single crystal rod
EP0042901B1 (de) * 1980-06-26 1984-10-31 International Business Machines Corporation Verfahren zum Kontrollieren des Sauerstoffgehaltes von Siliziumstäben, die nach dem Czochralski-Verfahren hergestellt worden sind
GB2084046B (en) * 1980-08-27 1984-07-25 Secr Defence Method and apparatus for crystal growth
CA1191075A (en) * 1980-12-29 1985-07-30 Roger A. Frederick Method for regulating concentration and distribution of oxygen in czochralski grown silicon
NL8102102A (nl) * 1981-04-29 1982-11-16 Philips Nv Werkwijze voor het optrekken van een siliciumstaaf en halfgeleiderinrichting vervaardigd uit de siliciumstaaf.
JPH0244799B2 (ja) * 1981-10-26 1990-10-05 Sony Corp Ketsushoseichohoho
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
JPS6027684A (ja) * 1983-07-26 1985-02-12 Fujitsu Ltd 単結晶製造装置
JPS6033289A (ja) * 1983-07-29 1985-02-20 Toshiba Corp シリコン単結晶の製造方法
JPS6094722A (ja) * 1983-08-16 1985-05-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション シリコン・ウエハ
JPS6153187A (ja) * 1984-08-24 1986-03-17 Sony Corp 単結晶成長装置
IT1207497B (it) * 1985-05-29 1989-05-25 Montedison Spa Monocristalli di arseniuro di gallio a bassa densita' di dislocazioni e di elevata purezza.

Also Published As

Publication number Publication date
KR870004498A (ko) 1987-05-09
FR2589489B1 (fr) 1994-06-10
JPS62105998A (ja) 1987-05-16
SE8604627D0 (sv) 1986-10-30
CN86106346A (zh) 1987-06-17
DE3637006A1 (de) 1987-05-07
AU6455086A (en) 1987-05-07
MY100449A (en) 1990-10-15
AU597599B2 (en) 1990-06-07
SE8604627L (sv) 1987-05-01
IT8648592A0 (it) 1986-10-28
IT1198454B (it) 1988-12-21
CA1336061C (en) 1995-06-27
DK518486A (da) 1987-05-01
GB8626074D0 (en) 1986-12-03
CN1016191B (zh) 1992-04-08
GB2182262B (en) 1989-09-27
NL8602738A (nl) 1987-05-18
FR2589489A1 (fr) 1987-05-07
DK518486D0 (da) 1986-10-30
GB2182262A (en) 1987-05-13

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Legal Events

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A1J Withdrawal paragraph 166 lit. 6