CA1336061C - High-oxygen-content silicon monocrystal substrate for semiconductor devices and production method therefor - Google Patents

High-oxygen-content silicon monocrystal substrate for semiconductor devices and production method therefor

Info

Publication number
CA1336061C
CA1336061C CA000520610A CA520610A CA1336061C CA 1336061 C CA1336061 C CA 1336061C CA 000520610 A CA000520610 A CA 000520610A CA 520610 A CA520610 A CA 520610A CA 1336061 C CA1336061 C CA 1336061C
Authority
CA
Canada
Prior art keywords
silicon
monocrystal
crucible
set forth
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA000520610A
Other languages
English (en)
French (fr)
Inventor
Yasaburo Kato
Motonobu Futagami
Toshihiko Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of CA1336061C publication Critical patent/CA1336061C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CA000520610A 1985-10-31 1986-10-16 High-oxygen-content silicon monocrystal substrate for semiconductor devices and production method therefor Expired - Fee Related CA1336061C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60-244562 1985-10-31
JP60244562A JPS62105998A (ja) 1985-10-31 1985-10-31 シリコン基板の製法

Publications (1)

Publication Number Publication Date
CA1336061C true CA1336061C (en) 1995-06-27

Family

ID=17120560

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000520610A Expired - Fee Related CA1336061C (en) 1985-10-31 1986-10-16 High-oxygen-content silicon monocrystal substrate for semiconductor devices and production method therefor

Country Status (14)

Country Link
JP (1) JPS62105998A (de)
KR (1) KR870004498A (de)
CN (1) CN1016191B (de)
AT (1) ATA289086A (de)
AU (1) AU597599B2 (de)
CA (1) CA1336061C (de)
DE (1) DE3637006A1 (de)
DK (1) DK518486A (de)
FR (1) FR2589489B1 (de)
GB (1) GB2182262B (de)
IT (1) IT1198454B (de)
MY (1) MY100449A (de)
NL (1) NL8602738A (de)
SE (1) SE8604627L (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9938634B2 (en) 2013-05-29 2018-04-10 Shin-Etsu Handotai Co., Ltd. Method of producing silicon single crystal

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
JP2613498B2 (ja) * 1991-03-15 1997-05-28 信越半導体株式会社 Ｓｉ単結晶ウエーハの熱処理方法
JPH07247197A (ja) * 1994-03-09 1995-09-26 Fujitsu Ltd 半導体装置とその製造方法
JP3443822B2 (ja) * 1996-03-27 2003-09-08 信越半導体株式会社 シリコン単結晶の製造方法
DE19711922A1 (de) * 1997-03-21 1998-09-24 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zum Ziehen eines Einkristalls
US6379642B1 (en) 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
KR20040065306A (ko) 1997-04-09 2004-07-21 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 저결함 밀도의 베이컨시가 지배적인 실리콘의 제조 방법
CN1316072C (zh) 1997-04-09 2007-05-16 Memc电子材料有限公司 低缺陷密度、理想氧沉淀的硅
JPH11268987A (ja) * 1998-03-20 1999-10-05 Shin Etsu Handotai Co Ltd シリコン単結晶およびその製造方法
DE69901115T2 (de) 1998-06-26 2002-12-19 Memc Electronic Materials, Inc. Verfahren zur herstellung fehlerfreier siliziumkristalle von willkürlichem grossen durchmesser
CN1155074C (zh) 1998-09-02 2004-06-23 Memc电子材料有限公司 从低缺陷密度的单晶硅上制备硅-绝缘体结构
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
US6416836B1 (en) 1998-10-14 2002-07-09 Memc Electronic Materials, Inc. Thermally annealed, low defect density single crystal silicon
EP1133590B1 (de) 1998-10-14 2003-12-17 MEMC Electronic Materials, Inc. Im wesentlichen defektfreie epitaktische siliziumscheiben
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
EP1356139B1 (de) 2001-01-26 2006-08-09 MEMC Electronic Materials, Inc. Silizium mit niedriger defektdichte und mit leerstellendominiertem kern, das im wesentlichen frei von oxidationsinduzierten stapelfehlern ist
DE10103691A1 (de) * 2001-01-26 2002-08-08 Crystal Growing Systems Gmbh Elektrische Energieversorgung für eine elektrische Heizung
EP2027312B1 (de) 2006-05-19 2015-02-18 MEMC Electronic Materials, Inc. Kontrolle der formierung von durch die seitliche oberfläche eines silicium-einkristalls während des cz-wachstums hervorgerufenen agglomerierten punktdefekten und sauerstoffclustern
CN105780113B (zh) * 2016-03-10 2017-11-28 江西赛维Ldk太阳能高科技有限公司 一种表征晶体硅生长界面和生长速度的方法
CN112095154B (zh) * 2019-06-18 2021-05-14 上海新昇半导体科技有限公司 一种半导体晶体生长装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5556098A (en) * 1978-10-17 1980-04-24 Chiyou Lsi Gijutsu Kenkyu Kumiai Method and apparatus for producing si single crystal rod
DE3069547D1 (en) * 1980-06-26 1984-12-06 Ibm Process for controlling the oxygen content of silicon ingots pulled by the czochralski method
GB2084046B (en) * 1980-08-27 1984-07-25 Secr Defence Method and apparatus for crystal growth
EP0055619B1 (de) * 1980-12-29 1985-05-29 Monsanto Company Verfahren zur Regelung der Konzentration und Distribution von Sauerstoff in Silizium, gezüchtet nach der Czochralskimethode
NL8102102A (nl) * 1981-04-29 1982-11-16 Philips Nv Werkwijze voor het optrekken van een siliciumstaaf en halfgeleiderinrichting vervaardigd uit de siliciumstaaf.
JPH0244799B2 (ja) * 1981-10-26 1990-10-05 Sony Corp Ketsushoseichohoho
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
JPS6027684A (ja) * 1983-07-26 1985-02-12 Fujitsu Ltd 単結晶製造装置
JPS6033289A (ja) * 1983-07-29 1985-02-20 Toshiba Corp シリコン単結晶の製造方法
JPS6094722A (ja) * 1983-08-16 1985-05-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション シリコン・ウエハ
JPS6153187A (ja) * 1984-08-24 1986-03-17 Sony Corp 単結晶成長装置
IT1207497B (it) * 1985-05-29 1989-05-25 Montedison Spa Monocristalli di arseniuro di gallio a bassa densita' di dislocazioni e di elevata purezza.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9938634B2 (en) 2013-05-29 2018-04-10 Shin-Etsu Handotai Co., Ltd. Method of producing silicon single crystal

Also Published As

Publication number Publication date
DK518486D0 (da) 1986-10-30
ATA289086A (de) 1996-01-15
IT8648592A0 (it) 1986-10-28
DK518486A (da) 1987-05-01
SE8604627L (sv) 1987-05-01
FR2589489A1 (fr) 1987-05-07
GB8626074D0 (en) 1986-12-03
NL8602738A (nl) 1987-05-18
CN86106346A (zh) 1987-06-17
IT1198454B (it) 1988-12-21
GB2182262A (en) 1987-05-13
AU597599B2 (en) 1990-06-07
FR2589489B1 (fr) 1994-06-10
CN1016191B (zh) 1992-04-08
AU6455086A (en) 1987-05-07
GB2182262B (en) 1989-09-27
JPS62105998A (ja) 1987-05-16
SE8604627D0 (sv) 1986-10-30
MY100449A (en) 1990-10-15
DE3637006A1 (de) 1987-05-07
KR870004498A (ko) 1987-05-09

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