DK518486A - Fremgangsmaade og apparat til fremstilling af siliciumsubstrater somemner til halvlederindretninger - Google Patents
Fremgangsmaade og apparat til fremstilling af siliciumsubstrater somemner til halvlederindretningerInfo
- Publication number
- DK518486A DK518486A DK518486A DK518486A DK518486A DK 518486 A DK518486 A DK 518486A DK 518486 A DK518486 A DK 518486A DK 518486 A DK518486 A DK 518486A DK 518486 A DK518486 A DK 518486A
- Authority
- DK
- Denmark
- Prior art keywords
- semiconductor devices
- manufacturing silicone
- substances subject
- silicone substances
- subject
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60244562A JPS62105998A (ja) | 1985-10-31 | 1985-10-31 | シリコン基板の製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DK518486D0 DK518486D0 (da) | 1986-10-30 |
| DK518486A true DK518486A (da) | 1987-05-01 |
Family
ID=17120560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK518486A DK518486A (da) | 1985-10-31 | 1986-10-30 | Fremgangsmaade og apparat til fremstilling af siliciumsubstrater somemner til halvlederindretninger |
Country Status (14)
| Country | Link |
|---|---|
| JP (1) | JPS62105998A (da) |
| KR (1) | KR870004498A (da) |
| CN (1) | CN1016191B (da) |
| AT (1) | ATA289086A (da) |
| AU (1) | AU597599B2 (da) |
| CA (1) | CA1336061C (da) |
| DE (1) | DE3637006A1 (da) |
| DK (1) | DK518486A (da) |
| FR (1) | FR2589489B1 (da) |
| GB (1) | GB2182262B (da) |
| IT (1) | IT1198454B (da) |
| MY (1) | MY100449A (da) |
| NL (1) | NL8602738A (da) |
| SE (1) | SE8604627L (da) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196085A (en) * | 1990-12-28 | 1993-03-23 | Massachusetts Institute Of Technology | Active magnetic flow control in Czochralski systems |
| JP2613498B2 (ja) * | 1991-03-15 | 1997-05-28 | 信越半導体株式会社 | Ｓｉ単結晶ウエーハの熱処理方法 |
| JPH07247197A (ja) * | 1994-03-09 | 1995-09-26 | Fujitsu Ltd | 半導体装置とその製造方法 |
| JP3443822B2 (ja) * | 1996-03-27 | 2003-09-08 | 信越半導体株式会社 | シリコン単結晶の製造方法 |
| DE19711922A1 (de) * | 1997-03-21 | 1998-09-24 | Wacker Siltronic Halbleitermat | Vorrichtung und Verfahren zum Ziehen eines Einkristalls |
| KR100508048B1 (ko) | 1997-04-09 | 2005-08-17 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 저결함 밀도 실리콘 잉곳의 제조 방법 |
| US6379642B1 (en) | 1997-04-09 | 2002-04-30 | Memc Electronic Materials, Inc. | Vacancy dominated, defect-free silicon |
| CN1316072C (zh) | 1997-04-09 | 2007-05-16 | Memc电子材料有限公司 | 低缺陷密度、理想氧沉淀的硅 |
| JPH11268987A (ja) * | 1998-03-20 | 1999-10-05 | Shin Etsu Handotai Co Ltd | シリコン単結晶およびその製造方法 |
| KR20010041957A (ko) | 1998-06-26 | 2001-05-25 | 헨넬리 헬렌 에프 | 임의인 대 직경의 무결함 실리콘 결정의 성장 공정 |
| US6236104B1 (en) | 1998-09-02 | 2001-05-22 | Memc Electronic Materials, Inc. | Silicon on insulator structure from low defect density single crystal silicon |
| WO2000022197A1 (en) | 1998-10-14 | 2000-04-20 | Memc Electronic Materials, Inc. | Epitaxial silicon wafers substantially free of grown-in defects |
| EP1125008B1 (en) | 1998-10-14 | 2003-06-18 | MEMC Electronic Materials, Inc. | Thermally annealed, low defect density single crystal silicon |
| US6312516B2 (en) | 1998-10-14 | 2001-11-06 | Memc Electronic Materials, Inc. | Process for preparing defect free silicon crystals which allows for variability in process conditions |
| US7105050B2 (en) | 2000-11-03 | 2006-09-12 | Memc Electronic Materials, Inc. | Method for the production of low defect density silicon |
| US6858307B2 (en) | 2000-11-03 | 2005-02-22 | Memc Electronic Materials, Inc. | Method for the production of low defect density silicon |
| DE10103691A1 (de) * | 2001-01-26 | 2002-08-08 | Crystal Growing Systems Gmbh | Elektrische Energieversorgung für eine elektrische Heizung |
| EP1356139B1 (en) | 2001-01-26 | 2006-08-09 | MEMC Electronic Materials, Inc. | Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core |
| KR101385810B1 (ko) | 2006-05-19 | 2014-04-16 | 엠이엠씨 일렉트로닉 머티리얼즈, 인크. | Ｃｚ 성장 동안에 실리콘 단결정의 측면에 의해 유도되는 응집된 점 결함 및 산소 클러스터 형성을 제어하는 방법 |
| JP5974978B2 (ja) * | 2013-05-29 | 2016-08-23 | 信越半導体株式会社 | シリコン単結晶製造方法 |
| CN105780113B (zh) * | 2016-03-10 | 2017-11-28 | 江西赛维Ldk太阳能高科技有限公司 | 一种表征晶体硅生长界面和生长速度的方法 |
| CN112095154B (zh) * | 2019-06-18 | 2021-05-14 | 上海新昇半导体科技有限公司 | 一种半导体晶体生长装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5556098A (en) * | 1978-10-17 | 1980-04-24 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method and apparatus for producing si single crystal rod |
| EP0042901B1 (fr) * | 1980-06-26 | 1984-10-31 | International Business Machines Corporation | Procédé pour contrôler la teneur en oxygène des barreaux de silicium tirés selon la méthode de Czochralski |
| GB2084046B (en) * | 1980-08-27 | 1984-07-25 | Secr Defence | Method and apparatus for crystal growth |
| DE3170781D1 (en) * | 1980-12-29 | 1985-07-04 | Monsanto Co | Method for regulating concentration and distribution of oxygen in czochralski grown silicon |
| NL8102102A (nl) * | 1981-04-29 | 1982-11-16 | Philips Nv | Werkwijze voor het optrekken van een siliciumstaaf en halfgeleiderinrichting vervaardigd uit de siliciumstaaf. |
| JPH0244799B2 (ja) * | 1981-10-26 | 1990-10-05 | Sony Corp | Ketsushoseichohoho |
| US4511428A (en) * | 1982-07-09 | 1985-04-16 | International Business Machines Corporation | Method of controlling oxygen content and distribution in grown silicon crystals |
| JPS6027684A (ja) * | 1983-07-26 | 1985-02-12 | Fujitsu Ltd | 単結晶製造装置 |
| JPS6033289A (ja) * | 1983-07-29 | 1985-02-20 | Toshiba Corp | シリコン単結晶の製造方法 |
| JPS6094722A (ja) * | 1983-08-16 | 1985-05-27 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | シリコン・ウエハ |
| JPS6153187A (ja) * | 1984-08-24 | 1986-03-17 | Sony Corp | 単結晶成長装置 |
| IT1207497B (it) * | 1985-05-29 | 1989-05-25 | Montedison Spa | Monocristalli di arseniuro di gallio a bassa densita' di dislocazioni e di elevata purezza. |
-
1985
- 1985-10-31 JP JP60244562A patent/JPS62105998A/ja active Pending
-
1986
- 1986-08-25 KR KR1019860007019A patent/KR870004498A/ko not_active Application Discontinuation
- 1986-10-16 CA CA000520610A patent/CA1336061C/en not_active Expired - Fee Related
- 1986-10-28 IT IT48592/86A patent/IT1198454B/it active
- 1986-10-29 FR FR868615075A patent/FR2589489B1/fr not_active Expired - Fee Related
- 1986-10-30 DE DE19863637006 patent/DE3637006A1/de not_active Ceased
- 1986-10-30 NL NL8602738A patent/NL8602738A/nl not_active Application Discontinuation
- 1986-10-30 SE SE8604627A patent/SE8604627L/ not_active Application Discontinuation
- 1986-10-30 AU AU64550/86A patent/AU597599B2/en not_active Ceased
- 1986-10-30 AT AT0289086A patent/ATA289086A/de not_active Application Discontinuation
- 1986-10-30 DK DK518486A patent/DK518486A/da not_active Application Discontinuation
- 1986-10-31 GB GB8626074A patent/GB2182262B/en not_active Expired
- 1986-10-31 CN CN86106346A patent/CN1016191B/zh not_active Expired
- 1986-10-31 MY MYPI86000057A patent/MY100449A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2589489B1 (fr) | 1994-06-10 |
| NL8602738A (nl) | 1987-05-18 |
| JPS62105998A (ja) | 1987-05-16 |
| CN86106346A (zh) | 1987-06-17 |
| GB2182262A (en) | 1987-05-13 |
| FR2589489A1 (fr) | 1987-05-07 |
| CN1016191B (zh) | 1992-04-08 |
| AU597599B2 (en) | 1990-06-07 |
| IT1198454B (it) | 1988-12-21 |
| MY100449A (en) | 1990-10-15 |
| KR870004498A (ko) | 1987-05-09 |
| SE8604627D0 (sv) | 1986-10-30 |
| GB2182262B (en) | 1989-09-27 |
| DK518486D0 (da) | 1986-10-30 |
| AU6455086A (en) | 1987-05-07 |
| GB8626074D0 (en) | 1986-12-03 |
| SE8604627L (sv) | 1987-05-01 |
| DE3637006A1 (de) | 1987-05-07 |
| CA1336061C (en) | 1995-06-27 |
| ATA289086A (de) | 1996-01-15 |
| IT8648592A0 (it) | 1986-10-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ATS | Application withdrawn |