IT8648592A0 - Sostrato monocristallino di silicio ad alto contenuto di ossigeno per dispositivi semiconduttori e procedimento per produrlo - Google Patents

Sostrato monocristallino di silicio ad alto contenuto di ossigeno per dispositivi semiconduttori e procedimento per produrlo

Info

Publication number
IT8648592A0
IT8648592A0 IT8648592A IT4859286A IT8648592A0 IT 8648592 A0 IT8648592 A0 IT 8648592A0 IT 8648592 A IT8648592 A IT 8648592A IT 4859286 A IT4859286 A IT 4859286A IT 8648592 A0 IT8648592 A0 IT 8648592A0
Authority
IT
Italy
Prior art keywords
producing
silicon substrate
semiconductor devices
oxygen content
monocrystalline silicon
Prior art date
Application number
IT8648592A
Other languages
English (en)
Other versions
IT8648592A1 (it
IT1198454B (it
Inventor
Suzuki Toshihiko
Kato Yasaburo
Futagami Motonobu
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of IT8648592A0 publication Critical patent/IT8648592A0/it
Publication of IT8648592A1 publication Critical patent/IT8648592A1/it
Application granted granted Critical
Publication of IT1198454B publication Critical patent/IT1198454B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT48592/86A 1985-10-31 1986-10-28 Sostrato monocristallino di silicio ad alto contenuto di ossigeno per dispositivi semiconduttori e procedimento per produrlo IT1198454B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60244562A JPS62105998A (ja) 1985-10-31 1985-10-31 シリコン基板の製法

Publications (3)

Publication Number Publication Date
IT8648592A0 true IT8648592A0 (it) 1986-10-28
IT8648592A1 IT8648592A1 (it) 1988-04-28
IT1198454B IT1198454B (it) 1988-12-21

Family

ID=17120560

Family Applications (1)

Application Number Title Priority Date Filing Date
IT48592/86A IT1198454B (it) 1985-10-31 1986-10-28 Sostrato monocristallino di silicio ad alto contenuto di ossigeno per dispositivi semiconduttori e procedimento per produrlo

Country Status (14)

Country Link
JP (1) JPS62105998A (it)
KR (1) KR870004498A (it)
CN (1) CN1016191B (it)
AT (1) ATA289086A (it)
AU (1) AU597599B2 (it)
CA (1) CA1336061C (it)
DE (1) DE3637006A1 (it)
DK (1) DK518486A (it)
FR (1) FR2589489B1 (it)
GB (1) GB2182262B (it)
IT (1) IT1198454B (it)
MY (1) MY100449A (it)
NL (1) NL8602738A (it)
SE (1) SE8604627L (it)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
JP2613498B2 (ja) * 1991-03-15 1997-05-28 信越半導体株式会社 Ｓｉ単結晶ウエーハの熱処理方法
JPH07247197A (ja) * 1994-03-09 1995-09-26 Fujitsu Ltd 半導体装置とその製造方法
JP3443822B2 (ja) * 1996-03-27 2003-09-08 信越半導体株式会社 シリコン単結晶の製造方法
DE19711922A1 (de) * 1997-03-21 1998-09-24 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zum Ziehen eines Einkristalls
JP3449731B2 (ja) 1997-04-09 2003-09-22 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 単結晶シリコンインゴットを製造する方法
MY135749A (en) 1997-04-09 2008-06-30 Memc Electronic Materials Process for producing low defect density, ideal oxygen precipitating silicon
US6379642B1 (en) 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
JPH11268987A (ja) * 1998-03-20 1999-10-05 Shin Etsu Handotai Co Ltd シリコン単結晶およびその製造方法
DE69901115T2 (de) 1998-06-26 2002-12-19 Memc Electronic Materials, Inc. Verfahren zur herstellung fehlerfreier siliziumkristalle von willkürlichem grossen durchmesser
US6236104B1 (en) 1998-09-02 2001-05-22 Memc Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
CN1296526C (zh) 1998-10-14 2007-01-24 Memc电子材料有限公司 热退火后的低缺陷密度单晶硅
EP1133590B1 (en) 1998-10-14 2003-12-17 MEMC Electronic Materials, Inc. Epitaxial silicon wafers substantially free of grown-in defects
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
UA70313C2 (en) * 2000-08-21 2004-10-15 Close Corp Pillar Close Corp P A method for growing silicon monocrystals of the ma method for growing silicon monocrystals of the melt elt
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
EP1688519A3 (en) 2001-01-26 2007-10-17 MEMC Electronic Materials, Inc. Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
DE10103691A1 (de) * 2001-01-26 2002-08-08 Crystal Growing Systems Gmbh Elektrische Energieversorgung für eine elektrische Heizung
US8216362B2 (en) 2006-05-19 2012-07-10 Memc Electronic Materials, Inc. Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during CZ growth
JP5974978B2 (ja) 2013-05-29 2016-08-23 信越半導体株式会社 シリコン単結晶製造方法
CN105780113B (zh) * 2016-03-10 2017-11-28 江西赛维Ldk太阳能高科技有限公司 一种表征晶体硅生长界面和生长速度的方法
CN112095154B (zh) * 2019-06-18 2021-05-14 上海新昇半导体科技有限公司 一种半导体晶体生长装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5556098A (en) * 1978-10-17 1980-04-24 Chiyou Lsi Gijutsu Kenkyu Kumiai Method and apparatus for producing si single crystal rod
DE3069547D1 (en) * 1980-06-26 1984-12-06 Ibm Process for controlling the oxygen content of silicon ingots pulled by the czochralski method
GB2084046B (en) * 1980-08-27 1984-07-25 Secr Defence Method and apparatus for crystal growth
DE3170781D1 (en) * 1980-12-29 1985-07-04 Monsanto Co Method for regulating concentration and distribution of oxygen in czochralski grown silicon
NL8102102A (nl) * 1981-04-29 1982-11-16 Philips Nv Werkwijze voor het optrekken van een siliciumstaaf en halfgeleiderinrichting vervaardigd uit de siliciumstaaf.
JPH0244799B2 (ja) * 1981-10-26 1990-10-05 Sony Corp Ketsushoseichohoho
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
JPS6027684A (ja) * 1983-07-26 1985-02-12 Fujitsu Ltd 単結晶製造装置
JPS6033289A (ja) * 1983-07-29 1985-02-20 Toshiba Corp シリコン単結晶の製造方法
JPS6094722A (ja) * 1983-08-16 1985-05-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション シリコン・ウエハ
JPS6153187A (ja) * 1984-08-24 1986-03-17 Sony Corp 単結晶成長装置
IT1207497B (it) * 1985-05-29 1989-05-25 Montedison Spa Monocristalli di arseniuro di gallio a bassa densita' di dislocazioni e di elevata purezza.

Also Published As

Publication number Publication date
GB2182262A (en) 1987-05-13
SE8604627D0 (sv) 1986-10-30
ATA289086A (de) 1996-01-15
SE8604627L (sv) 1987-05-01
AU597599B2 (en) 1990-06-07
MY100449A (en) 1990-10-15
NL8602738A (nl) 1987-05-18
GB2182262B (en) 1989-09-27
IT8648592A1 (it) 1988-04-28
CN1016191B (zh) 1992-04-08
CN86106346A (zh) 1987-06-17
KR870004498A (ko) 1987-05-09
DK518486A (da) 1987-05-01
FR2589489A1 (fr) 1987-05-07
DE3637006A1 (de) 1987-05-07
DK518486D0 (da) 1986-10-30
IT1198454B (it) 1988-12-21
FR2589489B1 (fr) 1994-06-10
GB8626074D0 (en) 1986-12-03
CA1336061C (en) 1995-06-27
JPS62105998A (ja) 1987-05-16
AU6455086A (en) 1987-05-07

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Effective date: 19961021