BR8505301A - Processo e aparelho para producao de silicone policristalino - Google Patents

Processo e aparelho para producao de silicone policristalino

Info

Publication number
BR8505301A
BR8505301A BR8505301A BR8505301A BR8505301A BR 8505301 A BR8505301 A BR 8505301A BR 8505301 A BR8505301 A BR 8505301A BR 8505301 A BR8505301 A BR 8505301A BR 8505301 A BR8505301 A BR 8505301A
Authority
BR
Brazil
Prior art keywords
production
polycrystalline silicon
polycrystalline
silicon
Prior art date
Application number
BR8505301A
Other languages
English (en)
Inventor
Hiroshi Ishizuka
Original Assignee
Hiroshi Ishizuka
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hiroshi Ishizuka filed Critical Hiroshi Ishizuka
Publication of BR8505301A publication Critical patent/BR8505301A/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
BR8505301A 1984-10-24 1985-10-23 Processo e aparelho para producao de silicone policristalino BR8505301A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59223177A JPS61101410A (ja) 1984-10-24 1984-10-24 多結晶珪素の製造法及びそのための装置

Publications (1)

Publication Number Publication Date
BR8505301A true BR8505301A (pt) 1986-08-05

Family

ID=16794008

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8505301A BR8505301A (pt) 1984-10-24 1985-10-23 Processo e aparelho para producao de silicone policristalino

Country Status (5)

Country Link
US (1) US4715317A (pt)
EP (1) EP0180397B1 (pt)
JP (1) JPS61101410A (pt)
BR (1) BR8505301A (pt)
DE (1) DE3586412T2 (pt)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4805556A (en) * 1988-01-15 1989-02-21 Union Carbide Corporation Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
DE59003200D1 (de) * 1989-06-30 1993-12-02 Siemens Ag Herstellverfahren für eine polykristalline Siliziumschicht mit definierter Korngrösse und Textur.
DE69027048T2 (de) * 1990-06-27 1997-01-02 Komatsu Denshi Kinzoku Kk Verfahren zur herstellung von polykristallinen siliziumstäben für halbleiter sowie dafür geeigneter ofen zur thermischen zersetzung
US5478396A (en) * 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
EP0636704B1 (en) * 1993-07-30 1999-11-03 Applied Materials, Inc. Silicon nitride deposition
JP4861016B2 (ja) * 2006-01-23 2012-01-25 株式会社東芝 処理装置
KR100768147B1 (ko) * 2006-05-11 2007-10-18 한국화학연구원 혼합된 코어수단을 이용한 다결정 실리콘 봉의 제조방법과그 제조장치
DE102006037020A1 (de) * 2006-08-08 2008-02-14 Wacker Chemie Ag Verfahren und Vorrichtung zur Herstellung von hochreinem polykristallinem Silicium mit reduziertem Dotierstoffgehalt
JP5040679B2 (ja) * 2008-01-25 2012-10-03 三菱マテリアル株式会社 多結晶シリコン製造装置
JP5266817B2 (ja) * 2008-03-17 2013-08-21 三菱マテリアル株式会社 多結晶シリコン製造装置
EP2108619B1 (en) * 2008-03-21 2011-06-22 Mitsubishi Materials Corporation Polycrystalline silicon reactor
US8961689B2 (en) * 2008-03-26 2015-02-24 Gtat Corporation Systems and methods for distributing gas in a chemical vapor deposition reactor
JP5444860B2 (ja) * 2008-06-24 2014-03-19 三菱マテリアル株式会社 多結晶シリコン製造装置
DE102008054519A1 (de) * 2008-12-11 2010-06-17 Wacker Chemie Ag Polykristallines germaniumlegiertes Silicium und ein Verfahren zu seiner Herstellung
US8540818B2 (en) * 2009-04-28 2013-09-24 Mitsubishi Materials Corporation Polycrystalline silicon reactor
JP5375312B2 (ja) * 2009-04-28 2013-12-25 三菱マテリアル株式会社 多結晶シリコン製造装置
US8911659B2 (en) * 2012-04-20 2014-12-16 Creative Innovations, Inc. Method and apparatus for manufacturing silicon seed rods
IT201900000235A1 (it) * 2019-01-09 2020-07-09 Lpe Spa Camera di reazione per un reattore di deposizione con intercapedine ed elemento di chiusura inferiore e reattore

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335697A (en) * 1954-05-18 1967-08-15 Siemens Ag Apparatus for vapor deposition of silicon
NL130620C (pt) * 1954-05-18 1900-01-01
NL113990C (pt) * 1955-11-02
DE1150366B (de) * 1958-12-09 1963-06-20 Siemens Ag Verfahren zur Herstellung von Reinstsilicium
NL251143A (pt) * 1959-05-04
DE1155759B (de) * 1959-06-11 1963-10-17 Siemens Ag Vorrichtung zur Gewinnung reinsten kristallinen Halbleitermaterials fuer elektrotechnische Zwecke
DE1185150B (de) * 1960-02-23 1965-01-14 Siemens Ag Verfahren zur Gewinnung von reinstem Halbleitermaterial, insbesondere Silicium
CA957828A (en) * 1970-10-21 1974-11-19 Howard B. Bradley Method for making silicon metal
GB2028289B (en) * 1978-08-18 1982-09-02 Schumacher Co J C Producing silicon
DE2854707C2 (de) * 1978-12-18 1985-08-14 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Vorrichtung zur thermischen Zersetzung gasförmiger Verbindungen und ihre Verwendung
US4550684A (en) * 1983-08-11 1985-11-05 Genus, Inc. Cooled optical window for semiconductor wafer heating

Also Published As

Publication number Publication date
JPH0475161B2 (pt) 1992-11-30
DE3586412D1 (de) 1992-09-03
EP0180397A2 (en) 1986-05-07
EP0180397A3 (en) 1988-04-06
EP0180397B1 (en) 1992-07-29
US4715317A (en) 1987-12-29
DE3586412T2 (de) 1993-02-18
JPS61101410A (ja) 1986-05-20

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Legal Events

Date Code Title Description
B21A Expiry acc. art. 78, item i of ipl- expiry of the term of protection

Free format text: PATENTE EXTINTA EM 23/10/2000