DE3586412D1 - Verfahren und vorrichtung zur herstellung von polykristallinem silicium. - Google Patents

Verfahren und vorrichtung zur herstellung von polykristallinem silicium.

Info

Publication number
DE3586412D1
DE3586412D1 DE8585307618T DE3586412T DE3586412D1 DE 3586412 D1 DE3586412 D1 DE 3586412D1 DE 8585307618 T DE8585307618 T DE 8585307618T DE 3586412 T DE3586412 T DE 3586412T DE 3586412 D1 DE3586412 D1 DE 3586412D1
Authority
DE
Germany
Prior art keywords
polycrystalline silicon
producing polycrystalline
producing
silicon
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585307618T
Other languages
English (en)
Other versions
DE3586412T2 (de
Inventor
Hiroshi Ishizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of DE3586412D1 publication Critical patent/DE3586412D1/de
Application granted granted Critical
Publication of DE3586412T2 publication Critical patent/DE3586412T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
DE8585307618T 1984-10-24 1985-10-22 Verfahren und vorrichtung zur herstellung von polykristallinem silicium. Expired - Fee Related DE3586412T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59223177A JPS61101410A (ja) 1984-10-24 1984-10-24 多結晶珪素の製造法及びそのための装置

Publications (2)

Publication Number Publication Date
DE3586412D1 true DE3586412D1 (de) 1992-09-03
DE3586412T2 DE3586412T2 (de) 1993-02-18

Family

ID=16794008

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585307618T Expired - Fee Related DE3586412T2 (de) 1984-10-24 1985-10-22 Verfahren und vorrichtung zur herstellung von polykristallinem silicium.

Country Status (5)

Country Link
US (1) US4715317A (de)
EP (1) EP0180397B1 (de)
JP (1) JPS61101410A (de)
BR (1) BR8505301A (de)
DE (1) DE3586412T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4805556A (en) * 1988-01-15 1989-02-21 Union Carbide Corporation Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
EP0405451B1 (de) * 1989-06-30 1993-10-27 Siemens Aktiengesellschaft Herstellverfahren für eine polykristalline Siliziumschicht mit definierter Korngrösse und Textur
WO1992000245A1 (en) * 1990-06-27 1992-01-09 Komatsu Electronic Metals Co., Ltd. Method of producing polycrystalline silicon rods for semiconductors and thermal decomposition furnace therefor
US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5478396A (en) * 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
EP0636704B1 (de) * 1993-07-30 1999-11-03 Applied Materials, Inc. Ablagerung des Siliziumnitrids
JP4861016B2 (ja) * 2006-01-23 2012-01-25 株式会社東芝 処理装置
KR100768147B1 (ko) * 2006-05-11 2007-10-18 한국화학연구원 혼합된 코어수단을 이용한 다결정 실리콘 봉의 제조방법과그 제조장치
DE102006037020A1 (de) * 2006-08-08 2008-02-14 Wacker Chemie Ag Verfahren und Vorrichtung zur Herstellung von hochreinem polykristallinem Silicium mit reduziertem Dotierstoffgehalt
JP5040679B2 (ja) * 2008-01-25 2012-10-03 三菱マテリアル株式会社 多結晶シリコン製造装置
JP5266817B2 (ja) * 2008-03-17 2013-08-21 三菱マテリアル株式会社 多結晶シリコン製造装置
EP2108619B1 (de) * 2008-03-21 2011-06-22 Mitsubishi Materials Corporation Polykristalliner Siliciumreaktor
US8961689B2 (en) * 2008-03-26 2015-02-24 Gtat Corporation Systems and methods for distributing gas in a chemical vapor deposition reactor
JP5444860B2 (ja) * 2008-06-24 2014-03-19 三菱マテリアル株式会社 多結晶シリコン製造装置
DE102008054519A1 (de) * 2008-12-11 2010-06-17 Wacker Chemie Ag Polykristallines germaniumlegiertes Silicium und ein Verfahren zu seiner Herstellung
JP5375312B2 (ja) * 2009-04-28 2013-12-25 三菱マテリアル株式会社 多結晶シリコン製造装置
JP5477145B2 (ja) * 2009-04-28 2014-04-23 三菱マテリアル株式会社 多結晶シリコン反応炉
US8911659B2 (en) * 2012-04-20 2014-12-16 Creative Innovations, Inc. Method and apparatus for manufacturing silicon seed rods
IT201900000235A1 (it) * 2019-01-09 2020-07-09 Lpe Spa Camera di reazione per un reattore di deposizione con intercapedine ed elemento di chiusura inferiore e reattore

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL233004A (de) * 1954-05-18 1900-01-01
US3335697A (en) * 1954-05-18 1967-08-15 Siemens Ag Apparatus for vapor deposition of silicon
NL225538A (de) * 1955-11-02
DE1150366B (de) * 1958-12-09 1963-06-20 Siemens Ag Verfahren zur Herstellung von Reinstsilicium
NL251143A (de) * 1959-05-04
DE1155759B (de) * 1959-06-11 1963-10-17 Siemens Ag Vorrichtung zur Gewinnung reinsten kristallinen Halbleitermaterials fuer elektrotechnische Zwecke
DE1185150B (de) * 1960-02-23 1965-01-14 Siemens Ag Verfahren zur Gewinnung von reinstem Halbleitermaterial, insbesondere Silicium
CA957828A (en) * 1970-10-21 1974-11-19 Howard B. Bradley Method for making silicon metal
GB2028289B (en) * 1978-08-18 1982-09-02 Schumacher Co J C Producing silicon
DE2854707C2 (de) * 1978-12-18 1985-08-14 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Vorrichtung zur thermischen Zersetzung gasförmiger Verbindungen und ihre Verwendung
US4550684A (en) * 1983-08-11 1985-11-05 Genus, Inc. Cooled optical window for semiconductor wafer heating

Also Published As

Publication number Publication date
EP0180397A2 (de) 1986-05-07
EP0180397A3 (en) 1988-04-06
JPS61101410A (ja) 1986-05-20
EP0180397B1 (de) 1992-07-29
BR8505301A (pt) 1986-08-05
US4715317A (en) 1987-12-29
JPH0475161B2 (de) 1992-11-30
DE3586412T2 (de) 1993-02-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee