DE3766029D1 - Verfahren und anlage zur herstellung von diamanten. - Google Patents

Verfahren und anlage zur herstellung von diamanten.

Info

Publication number
DE3766029D1
DE3766029D1 DE8787110686T DE3766029T DE3766029D1 DE 3766029 D1 DE3766029 D1 DE 3766029D1 DE 8787110686 T DE8787110686 T DE 8787110686T DE 3766029 T DE3766029 T DE 3766029T DE 3766029 D1 DE3766029 D1 DE 3766029D1
Authority
DE
Germany
Prior art keywords
producing diamonds
diamonds
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787110686T
Other languages
English (en)
Inventor
Akihiko Sumitomo Elect Ikegaya
Tobioka Sumitomo Elect Masaaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP17336686A external-priority patent/JPH0649635B2/ja
Priority claimed from JP62075282A external-priority patent/JPS63241323A/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE3766029D1 publication Critical patent/DE3766029D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
DE8787110686T 1986-07-23 1987-07-23 Verfahren und anlage zur herstellung von diamanten. Expired - Fee Related DE3766029D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17336686A JPH0649635B2 (ja) 1986-07-23 1986-07-23 ダイヤモンドの合成方法
JP62075282A JPS63241323A (ja) 1987-03-27 1987-03-27 表面温度測定方法

Publications (1)

Publication Number Publication Date
DE3766029D1 true DE3766029D1 (de) 1990-12-13

Family

ID=26416433

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787110686T Expired - Fee Related DE3766029D1 (de) 1986-07-23 1987-07-23 Verfahren und anlage zur herstellung von diamanten.

Country Status (4)

Country Link
US (1) US4859490A (de)
EP (1) EP0254312B1 (de)
KR (1) KR910001359B1 (de)
DE (1) DE3766029D1 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270028A (en) * 1988-02-01 1993-12-14 Sumitomo Electric Industries, Ltd. Diamond and its preparation by chemical vapor deposition method
EP0327051B2 (de) * 1988-02-01 1997-09-17 Sumitomo Electric Industries Limited Diamant und seine Darstellung durch ein Verfahren mittels Abscheidung aus der Gasphase
US5079031A (en) * 1988-03-22 1992-01-07 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for forming thin films
US5006203A (en) * 1988-08-12 1991-04-09 Texas Instruments Incorporated Diamond growth method
US4958592A (en) * 1988-08-22 1990-09-25 General Electric Company Resistance heater for diamond production by CVD
JPH02199099A (ja) * 1988-10-21 1990-08-07 Crystallume 連続ダイヤモンド薄膜およびその製法
US5258206A (en) * 1989-01-13 1993-11-02 Idemitsu Petrochemical Co., Ltd. Method and apparatus for producing diamond thin films
US4953499A (en) * 1989-08-03 1990-09-04 General Electric Company Apparatus for synthetic diamond deposition including curved filaments and substrate cooling means
JPH0780718B2 (ja) * 1989-08-04 1995-08-30 トヨタ自動車株式会社 ダイヤモンドの合成方法および合成装置
US5075094A (en) * 1990-04-30 1991-12-24 The United States Of America As Represented By The Secretary Of The Navy Method of growing diamond film on substrates
DE4029268C2 (de) * 1990-09-14 1995-07-06 Balzers Hochvakuum Verfahren zur gleichspannungs-bogenentladungs-unterstützten, reaktiven Behandlung von Gut und Vakuumbehandlungsanlage zur Durchführung
DE4029270C1 (de) * 1990-09-14 1992-04-09 Balzers Ag, Balzers, Li
US5147687A (en) * 1991-05-22 1992-09-15 Diamonex, Inc. Hot filament CVD of thick, adherent and coherent polycrystalline diamond films
US5146481A (en) * 1991-06-25 1992-09-08 Diwakar Garg Diamond membranes for X-ray lithography
CA2077773A1 (en) * 1991-10-25 1993-04-26 Thomas R. Anthony Microwave, rf, or ac/dc discharge assisted flame deposition of cvd diamond
EP0549207A1 (de) * 1991-12-26 1993-06-30 General Electric Company Diamant-Überzüge
EP0549187A1 (de) * 1991-12-26 1993-06-30 General Electric Company Diamant-Überzüge
US5290610A (en) * 1992-02-13 1994-03-01 Motorola, Inc. Forming a diamond material layer on an electron emitter using hydrocarbon reactant gases ionized by emitted electrons
US5359170A (en) * 1992-02-18 1994-10-25 At&T Global Information Solutions Company Apparatus for bonding external leads of an integrated circuit
JP3041133B2 (ja) * 1992-06-01 2000-05-15 松下電器産業株式会社 イオン化蒸着装置
US5439492A (en) * 1992-06-11 1995-08-08 General Electric Company Fine grain diamond workpieces
CA2112308C (en) * 1993-01-22 2000-08-15 Louis K. Bigelow Method of making white diamond film
US5431963A (en) * 1993-02-01 1995-07-11 General Electric Company Method for adhering diamondlike carbon to a substrate
US5909879A (en) * 1993-03-09 1999-06-08 Norton Company Diamond film coating for mating parts
US5441013A (en) * 1993-03-23 1995-08-15 At&T Bell Laboratories Method for growing continuous diamond films
JP2595894B2 (ja) * 1994-04-26 1997-04-02 日本電気株式会社 水素ラジカル発生装置
US5711773A (en) * 1994-11-17 1998-01-27 Plasmoteg Engineering Center Abrasive material for precision surface treatment and a method for the manufacturing thereof
US5976206A (en) * 1995-05-19 1999-11-02 Saint-Gobain/Norton Industrial Ceramics Corporation Method of making white diamond film
US6126793A (en) * 1995-10-17 2000-10-03 Citizen Watch Co., Ltd. Method of forming films over inner surface of cylindrical member
US5776553A (en) * 1996-02-23 1998-07-07 Saint Gobain/Norton Industrial Ceramics Corp. Method for depositing diamond films by dielectric barrier discharge
JP3861346B2 (ja) * 1996-12-04 2006-12-20 住友電気工業株式会社 ダイヤモンド合成方法
US6161499A (en) * 1997-07-07 2000-12-19 Cvd Diamond Corporation Apparatus and method for nucleation and deposition of diamond using hot-filament DC plasma
US20080241413A1 (en) * 2007-03-26 2008-10-02 Ravi Kramadhati V Plasma tool for forming porous diamond films for semiconductor applications
GB0813490D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Solid state material
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
BE1019439A3 (fr) 2010-07-30 2012-07-03 Diarotech Procede pour synthetiser par depot chimique en phase vapeur une matiere solide, en particulier du diamant, ainsi qu'un dispositif pour l'application du procede.

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4434188A (en) * 1981-12-17 1984-02-28 National Institute For Researches In Inorganic Materials Method for synthesizing diamond
JPS60122794A (ja) * 1983-12-01 1985-07-01 Mitsubishi Metal Corp ダイヤモンドの低圧気相合成法
JPS60221395A (ja) * 1984-04-19 1985-11-06 Yoshio Imai ダイヤモンド薄膜の製造方法
DE3587881T2 (de) * 1984-11-29 1995-03-02 Matsushita Electric Ind Co Ltd Verfahren zur plasma-chemischen Abscheidung aus der Dampfphase und Verfahren zur Herstellung eines Films von diamantähnlichem Kohlenstoff.
JP3196906B2 (ja) * 1992-08-21 2001-08-06 富士ゼロックス株式会社 画像信号の符号化装置

Also Published As

Publication number Publication date
EP0254312A1 (de) 1988-01-27
EP0254312B1 (de) 1990-11-07
KR910001359B1 (ko) 1991-03-04
KR880001524A (ko) 1988-04-23
US4859490A (en) 1989-08-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee