DE3577405D1 - Verfahren zur herstellung von polykristallen von halbleiterverbindungen und vorrichtung zu dessen durchfuehrung. - Google Patents

Verfahren zur herstellung von polykristallen von halbleiterverbindungen und vorrichtung zu dessen durchfuehrung.

Info

Publication number
DE3577405D1
DE3577405D1 DE8585116615T DE3577405T DE3577405D1 DE 3577405 D1 DE3577405 D1 DE 3577405D1 DE 8585116615 T DE8585116615 T DE 8585116615T DE 3577405 T DE3577405 T DE 3577405T DE 3577405 D1 DE3577405 D1 DE 3577405D1
Authority
DE
Germany
Prior art keywords
carrying
same
semiconductor connections
polycrystals
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585116615T
Other languages
English (en)
Inventor
Akihisa Kawasaki
Toshihiro Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP27883484A external-priority patent/JPS61158802A/ja
Priority claimed from JP28127084A external-priority patent/JPS61158803A/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE3577405D1 publication Critical patent/DE3577405D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/04—Pressure vessels, e.g. autoclaves
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/082—Other phosphides of boron, aluminium, gallium or indium
    • C01B25/087—Other phosphides of boron, aluminium, gallium or indium of gallium or indium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00—Compounds of zinc
    • C01G9/08—Sulfides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8585116615T 1984-12-28 1985-12-27 Verfahren zur herstellung von polykristallen von halbleiterverbindungen und vorrichtung zu dessen durchfuehrung. Expired - Fee Related DE3577405D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27883484A JPS61158802A (ja) 1984-12-28 1984-12-28 化合物半導体材料の合成方法及び装置
JP28127084A JPS61158803A (ja) 1984-12-29 1984-12-29 化合物半導体多結晶の合成装置

Publications (1)

Publication Number Publication Date
DE3577405D1 true DE3577405D1 (de) 1990-06-07

Family

ID=26553064

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585116615T Expired - Fee Related DE3577405D1 (de) 1984-12-28 1985-12-27 Verfahren zur herstellung von polykristallen von halbleiterverbindungen und vorrichtung zu dessen durchfuehrung.

Country Status (3)

Country Link
US (1) US5524571A (de)
EP (1) EP0186213B1 (de)
DE (1) DE3577405D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2628445B1 (fr) * 1988-03-11 1990-11-09 Thomson Hybrides Microondes Dispositif de synthese et tirage de materiaux iii-v, sous basse pression et procede mettant en oeuvre ce dispositif
TW440613B (en) * 1996-01-11 2001-06-16 Mitsubishi Material Silicon Method for pulling single crystal
JP3598642B2 (ja) * 1996-02-27 2004-12-08 信越半導体株式会社 連続チャージ法によるシリコン単結晶の製造方法
US6019841A (en) * 1997-03-24 2000-02-01 G.T. Equuipment Technologies Inc. Method and apparatus for synthesis and growth of semiconductor crystals
IT1314237B1 (it) * 1999-11-19 2002-12-06 Venezia Tecnologie S P A Procedimento di sintesi diretta di fosfuro di indio
US7001456B2 (en) * 2003-05-16 2006-02-21 Sumitomo Mitsubishi Silicon Corporation Apparatus and method for supplying Crystalline materials in czochralski method
US10294583B2 (en) 2007-04-24 2019-05-21 Sumco Techxiv Corporation Producing method and apparatus of silicon single crystal, and silicon single crystal ingot
CN108358180B (zh) * 2017-12-08 2019-08-02 中国电子科技集团公司第十三研究所 利用承载气体进行磷化物原位注入合成的方法
CN113308740B (zh) * 2021-06-03 2022-06-24 中国电子科技集团公司第十三研究所 一种半绝缘磷化铟的制备方法
CN116837467B (zh) * 2023-08-30 2023-11-17 福建福碳新材料科技有限公司 一种三代半导体用带碳化硅涂层的石墨坩埚

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3198606A (en) * 1961-01-23 1965-08-03 Ibm Apparatus for growing crystals
FR96322E (fr) * 1968-11-26 1972-06-16 Rhone Poulenc Sa Nouveau réacteur étagé.
NL6917398A (de) * 1969-03-18 1970-09-22
CA956867A (en) * 1970-12-04 1974-10-29 Albert G. Fischer Method and apparatus for forming crystalline bodies of a semiconductor material
BE786018A (fr) * 1971-07-09 1973-01-08 Allegheny Ludlum Ind Inc Procede d'injection d'un gaz reactif dans un bain de metal fondu
GB1374586A (en) * 1971-10-08 1974-11-20 British Aluminium Co Ltd Apparatus for introducing gas into liquid metal
JPS5153203Y2 (de) * 1971-12-21 1976-12-20
FR2175595B1 (de) * 1972-03-15 1974-09-13 Radiotechnique Compelec
DE2548046C3 (de) * 1975-10-27 1982-12-02 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum Ziehen einkristalliner Siliciumstäbe
US4118447A (en) * 1977-06-20 1978-10-03 Xodar Corporation Aerator containing a ballast charge
JPS5914440B2 (ja) * 1981-09-18 1984-04-04 住友電気工業株式会社 ＣａＡｓ単結晶への硼素のド−ピング方法
JPS623096A (ja) * 1985-06-27 1987-01-09 Res Dev Corp Of Japan 高解離圧化合物半導体単結晶成長方法

Also Published As

Publication number Publication date
EP0186213A2 (de) 1986-07-02
EP0186213A3 (en) 1987-11-04
EP0186213B1 (de) 1990-05-02
US5524571A (en) 1996-06-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee