DE3877875D1 - Bestandteil zum erzeugen von halbleitergeraeten und verfahren zu dessen herstellung. - Google Patents

Bestandteil zum erzeugen von halbleitergeraeten und verfahren zu dessen herstellung.

Info

Publication number
DE3877875D1
DE3877875D1 DE8888114166T DE3877875T DE3877875D1 DE 3877875 D1 DE3877875 D1 DE 3877875D1 DE 8888114166 T DE8888114166 T DE 8888114166T DE 3877875 T DE3877875 T DE 3877875T DE 3877875 D1 DE3877875 D1 DE 3877875D1
Authority
DE
Germany
Prior art keywords
production
component
semiconductor devices
producing semiconductor
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888114166T
Other languages
English (en)
Other versions
DE3877875T2 (de
Inventor
Takashi C O Oguni Plant O Ohto
Takashi C O Oguni Plant Tanaka
Makoto C O Oguni Plant O Satoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Publication of DE3877875D1 publication Critical patent/DE3877875D1/de
Application granted granted Critical
Publication of DE3877875T2 publication Critical patent/DE3877875T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Structural Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE8888114166T 1987-09-01 1988-08-31 Bestandteil zum erzeugen von halbleitergeraeten und verfahren zu dessen herstellung. Expired - Fee Related DE3877875T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62216490A JP2548949B2 (ja) 1987-09-01 1987-09-01 半導体製造用構成部材

Publications (2)

Publication Number Publication Date
DE3877875D1 true DE3877875D1 (de) 1993-03-11
DE3877875T2 DE3877875T2 (de) 1993-07-01

Family

ID=16689248

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888114166T Expired - Fee Related DE3877875T2 (de) 1987-09-01 1988-08-31 Bestandteil zum erzeugen von halbleitergeraeten und verfahren zu dessen herstellung.

Country Status (4)

Country Link
US (1) US4987016A (de)
EP (1) EP0308695B1 (de)
JP (1) JP2548949B2 (de)
DE (1) DE3877875T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152229A (ja) * 1991-11-26 1993-06-18 Mitsubishi Materials Corp 熱処理炉
JP2606932Y2 (ja) * 1992-06-29 2001-02-19 株式会社福井信越石英 縦型ウエーハ保持ボート
FR2702088B1 (fr) * 1993-02-24 1995-05-24 Sgs Thomson Microelectronics Nacelle pour plaquettes de silicium.
US5538230A (en) * 1994-08-08 1996-07-23 Sibley; Thomas Silicon carbide carrier for wafer processing
US5443649A (en) * 1994-11-22 1995-08-22 Sibley; Thomas Silicon carbide carrier for wafer processing in vertical furnaces
JPH09306980A (ja) * 1996-05-17 1997-11-28 Asahi Glass Co Ltd 縦型ウエハボート
US5702997A (en) * 1996-10-04 1997-12-30 Saint-Gobain/Norton Industrial Ceramics Corp. Process for making crack-free silicon carbide diffusion components
KR100303752B1 (ko) * 1997-09-02 2001-11-30 이와나미 기요히사 Cvd 실리콘 카바이드 필름 코팅을 갖는 반도체 웨이퍼 홀더
EP0901152B1 (de) * 1997-09-03 2003-04-02 Nippon Pillar Packing Co., Ltd. Träger für einen Halbleiterwafer mit einer CVD Siliziumkarbiden Filmbeschichtung
US6673198B1 (en) 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
EP1184355B1 (de) * 2000-02-15 2006-12-13 Toshiba Ceramics Co., Ltd. Verfahren zur herstellung von si-sic-gliedern zur thermischen behandlung von halbleitern
JP2001345268A (ja) * 2000-05-31 2001-12-14 Matsushita Electric Ind Co Ltd 半導体製造装置及び半導体の製造方法
US6811040B2 (en) 2001-07-16 2004-11-02 Rohm And Haas Company Wafer holding apparatus
US20040188319A1 (en) * 2003-03-28 2004-09-30 Saint-Gobain Ceramics & Plastics, Inc. Wafer carrier having improved processing characteristics
CN101018885B (zh) * 2004-08-24 2010-07-14 圣戈本陶瓷及塑料股份有限公司 半导体加工部件及用该部件进行的半导体加工
DE102009052308B3 (de) * 2009-11-09 2011-02-10 Heraeus Quarzglas Gmbh & Co. Kg Verfahren zur Herstellung eines Quarzglaszylinders sowie Träger zur Durchführung des Verfahrens
JP5991284B2 (ja) * 2013-08-23 2016-09-14 信越半導体株式会社 シリコンウェーハの熱処理方法
JP6845020B2 (ja) * 2017-01-11 2021-03-17 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの熱処理方法
JP2020090420A (ja) * 2018-12-07 2020-06-11 住友金属鉱山株式会社 黒鉛製またはセラミックス製の基板、基板の製造方法、炭化珪素の成膜方法および炭化珪素基板の製造方法
WO2021065355A1 (ja) * 2019-10-02 2021-04-08 日本碍子株式会社 耐火物

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2641723A1 (de) * 1976-09-16 1978-03-30 Wacker Chemitronic Verfahren zur erhoehung der durch induktionsheizung in duennen kohleplatten erreichbaren temperatur
JPS6045154A (ja) * 1983-08-18 1985-03-11 大日本印刷株式会社 ポリエステル樹脂複合容器およびその製造方法
JP2573480B2 (ja) * 1985-11-22 1997-01-22 東芝セラミックス 株式会社 半導体熱処理用治具

Also Published As

Publication number Publication date
DE3877875T2 (de) 1993-07-01
EP0308695B1 (de) 1993-01-27
EP0308695A3 (en) 1990-06-06
EP0308695A2 (de) 1989-03-29
US4987016A (en) 1991-01-22
JPS6461376A (en) 1989-03-08
JP2548949B2 (ja) 1996-10-30

Similar Documents

Publication Publication Date Title
DE3783783D1 (de) Plastikumhuellter chiptraeger und verfahren zu dessen herstellung.
DE3879320D1 (de) Copolyester und verfahren zu dessen herstellung.
DE3780560D1 (de) Fuehler und verfahren zu dessen herstellung.
DE68924132D1 (de) Halbleiterbauteil und Verfahren zur dessen Herstellung.
DE3769400D1 (de) Verkapselte halbleiteranordnung und verfahren zu deren herstellung.
DE3581563D1 (de) Polysiloxanpfropfcopolymer und verfahren zu dessen herstellung.
DE3585171D1 (de) Mehrschichtstoff und verfahren zu dessen herstellung.
DE3679087D1 (de) Halbleitervorrichtung und verfahren zu seiner herstellung.
DE3868902D1 (de) Suesswaren vorrichtung und verfahren zu deren herstellung.
DE3877875D1 (de) Bestandteil zum erzeugen von halbleitergeraeten und verfahren zu dessen herstellung.
DE3575241D1 (de) Halbleiteranordnung und verfahren zum herstellen derselben.
DE3882319D1 (de) Lederartiges schichtprodukt und verfahren zu dessen herstellung.
DE3782201D1 (de) Halbleiterphotosensor und verfahren zu dessen herstellung.
DE3780532D1 (de) Amphoterische staerke und verfahren zu deren herstellung.
DE3775614D1 (de) Teilchenzaehler und verfahren zu dessen herstellung.
DE3874372D1 (de) Polysiloxan-polyimide und verfahren zu deren herstellung.
DE69032446D1 (de) Halbleiterbauelement und Verfahren zu dessen Herstellung
DE3862937D1 (de) 3-oxo-propannitril heteroarylderivate und verfahren zu deren herstellung.
DE3878475D1 (de) Organopolysiloxanemulsion und verfahren zu ihrer herstellung.
DE68902670D1 (de) Ks-506 verbindungen und verfahren zu deren herstellung.
DE3879536D1 (de) Supraleitender keramischer film und verfahren zu dessen herstellung.
DE3877709D1 (de) Indan-derivate und verfahren zu deren herstellung.
DE3578266D1 (de) Verfahren zum herstellen von halbleiteranordnungen und dadurch hergestellte anordnungen.
DE69111327D1 (de) Block von Mikroverbindungsstiften und Verfahren zu dessen Herstellung.
DE3865927D1 (de) Tetrahydroindazolyl-benzoxazine, verfahren zu deren herstellung und deren anwendung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee