CA956867A - Method and apparatus for forming crystalline bodies of a semiconductor material - Google Patents
Method and apparatus for forming crystalline bodies of a semiconductor materialInfo
- Publication number
- CA956867A CA956867A CA120,156A CA120156A CA956867A CA 956867 A CA956867 A CA 956867A CA 120156 A CA120156 A CA 120156A CA 956867 A CA956867 A CA 956867A
- Authority
- CA
- Canada
- Prior art keywords
- semiconductor material
- forming crystalline
- crystalline bodies
- bodies
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US9508570A | 1970-12-04 | 1970-12-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA956867A true CA956867A (en) | 1974-10-29 |
Family
ID=22249442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA120,156A Expired CA956867A (en) | 1970-12-04 | 1971-08-09 | Method and apparatus for forming crystalline bodies of a semiconductor material |
Country Status (5)
Country | Link |
---|---|
CA (1) | CA956867A (en) |
DE (1) | DE2142388A1 (en) |
FR (1) | FR2117030A5 (en) |
GB (1) | GB1353917A (en) |
NL (1) | NL7112153A (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4083748A (en) * | 1975-10-30 | 1978-04-11 | Western Electric Company, Inc. | Method of forming and growing a single crystal of a semiconductor compound |
JPS6117498A (en) * | 1984-07-05 | 1986-01-25 | Hitachi Cable Ltd | Synthesis of compound semiconductor from element in group iii to v |
JPS6136109A (en) * | 1984-07-27 | 1986-02-20 | Hitachi Cable Ltd | Method of synthesizing compound semiconductor of group iii-v |
EP0186213B1 (en) * | 1984-12-28 | 1990-05-02 | Sumitomo Electric Industries Limited | Method for synthesizing compound semiconductor polycrystals and apparatus therefor |
JPS63195187A (en) * | 1987-02-06 | 1988-08-12 | Furukawa Electric Co Ltd:The | Crystal growth apparatus for compound semiconductor |
EP0494312B1 (en) * | 1990-07-26 | 1996-10-09 | Sumitomo Electric Industries, Ltd. | Method and apparatus for making single crystal |
US5656079A (en) * | 1993-02-26 | 1997-08-12 | The United States Of America As Represented By The Air Force | Statement of government interest |
JP4135239B2 (en) | 1997-12-26 | 2008-08-20 | 住友電気工業株式会社 | Semiconductor crystal, manufacturing method thereof and manufacturing apparatus |
US6572700B2 (en) | 1997-12-26 | 2003-06-03 | Sumitomo Electric Industries, Ltd. | Semiconductor crystal, and method and apparatus of production thereof |
-
1971
- 1971-08-09 CA CA120,156A patent/CA956867A/en not_active Expired
- 1971-08-24 DE DE19712142388 patent/DE2142388A1/en active Pending
- 1971-08-26 GB GB4004871A patent/GB1353917A/en not_active Expired
- 1971-08-31 FR FR7131501A patent/FR2117030A5/fr not_active Expired
- 1971-09-03 NL NL7112153A patent/NL7112153A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
GB1353917A (en) | 1974-05-22 |
DE2142388A1 (en) | 1972-06-08 |
FR2117030A5 (en) | 1972-07-21 |
NL7112153A (en) | 1972-06-06 |
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