CA996844A - Method and apparatus for producing semi-conductor material - Google Patents

Method and apparatus for producing semi-conductor material

Info

Publication number
CA996844A
CA996844A CA168,722A CA168722A CA996844A CA 996844 A CA996844 A CA 996844A CA 168722 A CA168722 A CA 168722A CA 996844 A CA996844 A CA 996844A
Authority
CA
Canada
Prior art keywords
conductor material
producing semi
semi
producing
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA168,722A
Other versions
CA168722S (en
Inventor
Wolfgang Dietze
Andreas Kasper
Ulrich Rucha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA996844A publication Critical patent/CA996844A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
CA168,722A 1972-05-16 1973-04-13 Method and apparatus for producing semi-conductor material Expired CA996844A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722223868 DE2223868C3 (en) 1972-05-16 1972-05-16 Method and device for producing hollow bodies made of semiconductor material, in particular silicon tubes

Publications (1)

Publication Number Publication Date
CA996844A true CA996844A (en) 1976-09-14

Family

ID=5845030

Family Applications (1)

Application Number Title Priority Date Filing Date
CA168,722A Expired CA996844A (en) 1972-05-16 1973-04-13 Method and apparatus for producing semi-conductor material

Country Status (9)

Country Link
JP (1) JPS551700B2 (en)
BE (1) BE789719A (en)
CA (1) CA996844A (en)
CS (1) CS171283B2 (en)
DD (1) DD104029A5 (en)
DE (1) DE2223868C3 (en)
GB (1) GB1392142A (en)
IT (1) IT987169B (en)
NL (1) NL7217452A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006110481A2 (en) * 2005-04-10 2006-10-19 Rec Silicon Inc Production of polycrystalline silicon

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1917016B2 (en) * 1969-04-02 1972-01-05 Siemens AG, 1000 Berlin u. 8000 München PROCESS FOR MANUFACTURING HOLLOW BODIES FROM SEMICONDUCTOR MATERIAL
DE2022025C3 (en) * 1970-05-05 1980-03-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for producing a hollow body from semiconductor material

Also Published As

Publication number Publication date
JPS551700B2 (en) 1980-01-16
GB1392142A (en) 1975-04-30
DD104029A5 (en) 1974-02-20
DE2223868B2 (en) 1980-09-04
JPS4950865A (en) 1974-05-17
BE789719A (en) 1973-02-01
IT987169B (en) 1975-02-20
DE2223868A1 (en) 1973-11-29
NL7217452A (en) 1973-11-20
DE2223868C3 (en) 1981-06-19
CS171283B2 (en) 1976-10-29

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