BE789719A - METHOD AND DEVICE FOR MANUFACTURING HOLLOW BODIES FROM A SEMICONDUCTOR MATERIAL, IN PARTICULAR SILICON TUBES - Google Patents
METHOD AND DEVICE FOR MANUFACTURING HOLLOW BODIES FROM A SEMICONDUCTOR MATERIAL, IN PARTICULAR SILICON TUBESInfo
- Publication number
- BE789719A BE789719A BE789719DA BE789719A BE 789719 A BE789719 A BE 789719A BE 789719D A BE789719D A BE 789719DA BE 789719 A BE789719 A BE 789719A
- Authority
- BE
- Belgium
- Prior art keywords
- semiconductor material
- hollow bodies
- particular silicon
- manufacturing hollow
- silicon tubes
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19722223868 DE2223868C3 (en) | 1972-05-16 | 1972-05-16 | Method and device for producing hollow bodies made of semiconductor material, in particular silicon tubes |
Publications (1)
Publication Number | Publication Date |
---|---|
BE789719A true BE789719A (en) | 1973-02-01 |
Family
ID=5845030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE789719D BE789719A (en) | 1972-05-16 | METHOD AND DEVICE FOR MANUFACTURING HOLLOW BODIES FROM A SEMICONDUCTOR MATERIAL, IN PARTICULAR SILICON TUBES |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS551700B2 (en) |
BE (1) | BE789719A (en) |
CA (1) | CA996844A (en) |
CS (1) | CS171283B2 (en) |
DD (1) | DD104029A5 (en) |
DE (1) | DE2223868C3 (en) |
GB (1) | GB1392142A (en) |
IT (1) | IT987169B (en) |
NL (1) | NL7217452A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20080005953A (en) * | 2005-04-10 | 2008-01-15 | 알이씨 실리콘 인코포레이티드 | Production of polycrystalline silicon |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1917016B2 (en) * | 1969-04-02 | 1972-01-05 | Siemens AG, 1000 Berlin u. 8000 München | PROCESS FOR MANUFACTURING HOLLOW BODIES FROM SEMICONDUCTOR MATERIAL |
DE2022025C3 (en) * | 1970-05-05 | 1980-03-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Device for producing a hollow body from semiconductor material |
-
0
- BE BE789719D patent/BE789719A/en unknown
-
1972
- 1972-05-16 DE DE19722223868 patent/DE2223868C3/en not_active Expired
- 1972-12-21 NL NL7217452A patent/NL7217452A/xx unknown
-
1973
- 1973-02-16 GB GB765673A patent/GB1392142A/en not_active Expired
- 1973-04-13 CA CA168,722A patent/CA996844A/en not_active Expired
- 1973-05-08 IT IT2380573A patent/IT987169B/en active
- 1973-05-11 DD DD17077773A patent/DD104029A5/xx unknown
- 1973-05-14 JP JP5268073A patent/JPS551700B2/ja not_active Expired
- 1973-05-14 CS CS341573A patent/CS171283B2/cs unknown
Also Published As
Publication number | Publication date |
---|---|
IT987169B (en) | 1975-02-20 |
NL7217452A (en) | 1973-11-20 |
DE2223868A1 (en) | 1973-11-29 |
JPS4950865A (en) | 1974-05-17 |
GB1392142A (en) | 1975-04-30 |
JPS551700B2 (en) | 1980-01-16 |
CS171283B2 (en) | 1976-10-29 |
DD104029A5 (en) | 1974-02-20 |
DE2223868C3 (en) | 1981-06-19 |
CA996844A (en) | 1976-09-14 |
DE2223868B2 (en) | 1980-09-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BE842511A (en) | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING PROCESS | |
FR2309036A1 (en) | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING PROCESS | |
BE783737A (en) | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THIS DEVICE | |
BE771917A (en) | SEMICONDUCTOR DEVICE AND PROCESS FOR ITS MANUFACTURING | |
BE798446A (en) | CERAMIC MATERIAL AND ITS MANUFACTURING PROCESS | |
FR2275593A1 (en) | DRAINAGE PIPE IN SYNTHETIC MATERIAL, AND DEVICE FOR MANUFACTURING THIS PIPE | |
BE800991A (en) | METHOD AND DEVICE FOR MANUFACTURING BODIES SHAPED IN SILICON OR SILICON CARBIDE | |
FR2325196A1 (en) | SEMICONDUCTOR DEVICE PRESENTING REDUCED SURFACE LEAKAGE CURRENTS AND MANUFACTURING PROCESS | |
FR2327480A1 (en) | PIPE AND ITS MANUFACTURING PROCESS | |
BE776319A (en) | SEMICONDUCTOR DEVICE AND PROCESS FOR ITS MANUFACTURING | |
BE802013A (en) | METHOD AND DEVICE FOR MANUFACTURING BULBS, IN PARTICULAR DOUBLE BULBS | |
FR2325194A1 (en) | CHARGE PUMPING DEVICE FOR SEMICONDUCTOR AND ITS MANUFACTURING PROCESS | |
BE769729A (en) | SEMICONDUCTOR DEVICE, IN PARTICULAR AN INTEGRATED MONOLITHIC CIRCUIT AND METHOD FOR MANUFACTURING THIS DEVICE | |
FR2334205A1 (en) | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING PROCESS | |
BE803528A (en) | PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICES | |
CA978664A (en) | Method of forming impurity diffused junctions in a semiconductor wafer | |
FR2328283A1 (en) | SEMICONDUCTOR DEVICE AND PROCESS FOR ITS MANUFACTURING | |
BE846213A (en) | PROCESS FOR MANUFACTURING SILICON HOLLOW BODIES | |
BE797424A (en) | PROCESS FOR MANUFACTURING SEMICONDUCTOR HOLLOW TUBES OR BODIES | |
BE789719A (en) | METHOD AND DEVICE FOR MANUFACTURING HOLLOW BODIES FROM A SEMICONDUCTOR MATERIAL, IN PARTICULAR SILICON TUBES | |
BE858089A (en) | METHOD AND DEVICE FOR MANUFACTURING SHAPED PARTS, IN PARTICULAR TUBE ELBOWS, FROM TUBES OF THREMOPLASTIC SYNTHETIC MATERIAL | |
BE818627A (en) | PROCESS FOR MANUFACTURING HOLLOW BODIES FROM A SEMICONDUCTOR MATERIAL | |
BE796998A (en) | METHOD AND DEVICE FOR MANUFACTURING HOLLOW BODIES FROM A SEMI-CONDUCTIVE MATERIAL USED FOR DIFFUSION PURPOSES | |
BE807927A (en) | METHOD AND APPARATUS FOR MANUFACTURING REINFORCEMENT ELEMENTS | |
BE778659A (en) | PROCESS FOR MANUFACTURING HOLLOW BODIES OF ANY LENGTH IN A SEMI-CONDUCTIVE MATERIAL, IN PARTICULAR IN SILICON |