GB1392142A - Production of shaped bodies of semiconductor material - Google Patents

Production of shaped bodies of semiconductor material

Info

Publication number
GB1392142A
GB1392142A GB765673A GB765673A GB1392142A GB 1392142 A GB1392142 A GB 1392142A GB 765673 A GB765673 A GB 765673A GB 765673 A GB765673 A GB 765673A GB 1392142 A GB1392142 A GB 1392142A
Authority
GB
United Kingdom
Prior art keywords
graphite
bodies
carrier
rod
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB765673A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1392142A publication Critical patent/GB1392142A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)

Abstract

1392142 Semi-conductor bodies SIEMENS AG 16 Feb 1973 [16 May 1972] 7656/73 Heading C1A Shaped semi-conductor bodies are prepared by vapour phase deposition of the semiconductor on to the outer surface of a carrier body heated indirectly by radiation from a heated carbon body, followed by removal of the carrier body from the deposition layer so formed, wherein (a) the carrier is hollow and the heater body is located therein or (b) the carrier comprises two bodies surrounding the heater body. An Si layer 13 may be deposited from an Si-containing gas having a temp. of 1150- 1200‹ C. within the bell-shaped reaction vessel 1 on to the hollow graphite tube carrier 12 indirectly heated to a temp. of 1400‹ C. by passage of an electric current through the inner concentric graphite tube 9 connected via graphite end-piece 11 to a central carbon rod 10, the tube 9 and the rod 10 being connected via graphite supports 7 and 8 to the Ag electrodes 6. Alternatively, the heater body may comprise a graphite rod 25 having a blind axial slot 24, each arm of the rod 29 and 30 being connected to electrodes 27 and 28. In another arrangement, two heater bodies 17 and 18 linked by a graphite bridge 19 may be used, these bodies being surrounded by tubular graphite carrier bodies 15 and 16 having slots 22 and holes 23 for imparting slots and holes into the semi-conductor.
GB765673A 1972-05-16 1973-02-16 Production of shaped bodies of semiconductor material Expired GB1392142A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722223868 DE2223868C3 (en) 1972-05-16 1972-05-16 Method and device for producing hollow bodies made of semiconductor material, in particular silicon tubes

Publications (1)

Publication Number Publication Date
GB1392142A true GB1392142A (en) 1975-04-30

Family

ID=5845030

Family Applications (1)

Application Number Title Priority Date Filing Date
GB765673A Expired GB1392142A (en) 1972-05-16 1973-02-16 Production of shaped bodies of semiconductor material

Country Status (9)

Country Link
JP (1) JPS551700B2 (en)
BE (1) BE789719A (en)
CA (1) CA996844A (en)
CS (1) CS171283B2 (en)
DD (1) DD104029A5 (en)
DE (1) DE2223868C3 (en)
GB (1) GB1392142A (en)
IT (1) IT987169B (en)
NL (1) NL7217452A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006110481A2 (en) * 2005-04-10 2006-10-19 Rec Silicon Inc Production of polycrystalline silicon

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1917016B2 (en) * 1969-04-02 1972-01-05 Siemens AG, 1000 Berlin u. 8000 München PROCESS FOR MANUFACTURING HOLLOW BODIES FROM SEMICONDUCTOR MATERIAL
DE2022025C3 (en) * 1970-05-05 1980-03-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for producing a hollow body from semiconductor material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006110481A2 (en) * 2005-04-10 2006-10-19 Rec Silicon Inc Production of polycrystalline silicon
WO2006110481A3 (en) * 2005-04-10 2007-04-05 Rec Silicon Inc Production of polycrystalline silicon
JP2008535758A (en) * 2005-04-10 2008-09-04 アールイーシー シリコン インコーポレイテッド Production of polycrystalline silicon

Also Published As

Publication number Publication date
IT987169B (en) 1975-02-20
DD104029A5 (en) 1974-02-20
NL7217452A (en) 1973-11-20
DE2223868C3 (en) 1981-06-19
DE2223868B2 (en) 1980-09-04
CS171283B2 (en) 1976-10-29
BE789719A (en) 1973-02-01
DE2223868A1 (en) 1973-11-29
JPS551700B2 (en) 1980-01-16
JPS4950865A (en) 1974-05-17
CA996844A (en) 1976-09-14

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee