GB1347368A - Manufacture of tubular bodies of semiconductor material - Google Patents

Manufacture of tubular bodies of semiconductor material

Info

Publication number
GB1347368A
GB1347368A GB4411571A GB1347368A GB1347368A GB 1347368 A GB1347368 A GB 1347368A GB 4411571 A GB4411571 A GB 4411571A GB 1347368 A GB1347368 A GB 1347368A GB 1347368 A GB1347368 A GB 1347368A
Authority
GB
United Kingdom
Prior art keywords
tubular
tubes
carriers
semi
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4411571A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE2050076A priority Critical patent/DE2050076C3/de
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1347368A publication Critical patent/GB1347368A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Abstract

1347368 Semi-conductors SIEMENS AG 22 Sept 1971 [12 Oct 1970] 44115/71 Heading C1A [Also in Division F2] Apparatus for the production of tubular bodies of semi-conductor material by the deposition of the material from a reaction gas on to the heated surface of a rod-shaped or tubular carrier and subsequent removal of the so-formed tube from the carrier comprises two rod-shaped or tubular carriers of carbon arranged substantially vertically within a reaction chamber, each of said carriers being supported at its lower edge by a respective electrode and said carriers being joined at their upper ends by an electrically conducting bridge, and means for the continuous passage of gaseous or liquid coolant through said tubular member or members, said tubular member or at least one of said tubular members serving as a carrier for the deposition of semiconductor material. The carriers may be of carbon and the bridge of graphite. Specified semi-conductor materials are silicon, germanium, gallium arsenide, indium antimonide and silicon carbide. As shown in Fig. 1, a base-plate 1 of quartz or heat resistant metal is hermetically connected to a ball 2 of quartz thus forming a reaction chamber. Two vertical tubular carriers 3 of carbon are located inside, their lower ends fitting into stepped bores and connected to electrodes 5. The upper ends of the tubes are connected by a conductive bridge 6, preferably of the same material as the tubes. The interior of the tubes is in communication with the reaction chamber via bores 7 in the bridge, thus allowing gaseous coolant to be fed from a supply line 8 through the tubes into the reaction chamber. The coolant may be a reducing agent, e.g. hydrogen, which takes part in the reaction or a diluent for the reactants proper. Reaction gas (e.g. SiHCl 3 , SiCl 4 and hydrogen) is fed into the reaction chamber via line 9, and a discharge tube 10 for spent gas is arranged coaxially about the supply line 9. After deposition of sufficient semi-conductor material, the apparatus is allowed to cool and the tubes 12 stripped from the formers 3. In another arrangement the two members may be arranged coaxially, the inner member serving as a current supply member but not as a carrier for the semi-conductor material.
GB4411571A 1970-10-12 1971-09-22 Manufacture of tubular bodies of semiconductor material Expired GB1347368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE2050076A DE2050076C3 (en) 1970-10-12 1970-10-12

Publications (1)

Publication Number Publication Date
GB1347368A true GB1347368A (en) 1974-02-27

Family

ID=5784889

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4411571A Expired GB1347368A (en) 1970-10-12 1971-09-22 Manufacture of tubular bodies of semiconductor material

Country Status (13)

Country Link
US (1) US3746496A (en)
JP (1) JPS491393B1 (en)
BE (1) BE768301A (en)
CA (1) CA959382A (en)
CH (1) CH528301A (en)
CS (1) CS188118B2 (en)
DE (1) DE2050076C3 (en)
DK (1) DK133604C (en)
FR (1) FR2111084A5 (en)
GB (1) GB1347368A (en)
NL (1) NL7111264A (en)
SE (1) SE367443B (en)
SU (1) SU430532A3 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3950479A (en) * 1969-04-02 1976-04-13 Siemens Aktiengesellschaft Method of producing hollow semiconductor bodies
US4015922A (en) * 1970-12-09 1977-04-05 Siemens Aktiengesellschaft Apparatus for the manufacture of tubular bodies of semiconductor material
US3979490A (en) * 1970-12-09 1976-09-07 Siemens Aktiengesellschaft Method for the manufacture of tubular bodies of semiconductor material
US4034705A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
DE2322952C3 (en) * 1973-05-07 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen
DE2518853C3 (en) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen
JPS58177460U (en) * 1982-05-19 1983-11-28
JP2725081B2 (en) * 1990-07-05 1998-03-09 富士通株式会社 Heat treatment equipment for semiconductor device manufacturing
US6228297B1 (en) * 1998-05-05 2001-05-08 Rohm And Haas Company Method for producing free-standing silicon carbide articles
US9683286B2 (en) * 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
JP5309963B2 (en) * 2007-12-28 2013-10-09 三菱マテリアル株式会社 Polycrystalline silicon silicon core rod assembly and manufacturing method thereof, polycrystalline silicon manufacturing apparatus, and polycrystalline silicon manufacturing method
TWI494458B (en) * 2008-03-26 2015-08-01 Gtat Corp Systems and methods for distributing gas in a chemical vapor deposition reactor
KR20100139092A (en) * 2008-03-26 2010-12-31 지티 솔라 인코퍼레이티드 Gold-coated polysilicon reactor system and method
WO2010008477A2 (en) * 2008-06-23 2010-01-21 Gt Solar Incorporated Chuck and bridge connection points for tube filaments in a chemical vapor deposition reactor
US10494714B2 (en) * 2011-01-03 2019-12-03 Oci Company Ltd. Chuck for chemical vapor deposition systems and related methods therefor
CN103158202B (en) * 2011-12-09 2016-07-06 洛阳金诺机械工程有限公司 A kind of bridging method of hollow silicon core
CN103158201B (en) * 2011-12-09 2016-03-02 洛阳金诺机械工程有限公司 The bridging method of a kind of hollow silicon core and solid silicon core
CN103158200B (en) * 2011-12-09 2016-07-06 洛阳金诺机械工程有限公司 A kind of bridging method of C-shaped silicon core
US10450649B2 (en) * 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2955566A (en) * 1957-04-16 1960-10-11 Chilean Nitrate Sales Corp Dissociation-deposition unit for the production of chromium
NL238464A (en) * 1958-05-29
NL124906C (en) * 1958-12-09
GB944009A (en) * 1960-01-04 1963-12-11 Texas Instruments Ltd Improvements in or relating to the deposition of silicon on a tantalum article
DE1223804B (en) * 1961-01-26 1966-09-01 Siemens Ag Device for the extraction of pure semiconductor material, such as silicon

Also Published As

Publication number Publication date
US3746496A (en) 1973-07-17
CH528301A (en) 1972-09-30
CA959382A1 (en)
FR2111084A5 (en) 1972-06-02
DE2050076C3 (en) 1980-06-26
DK133604C (en) 1976-11-01
BE768301A1 (en)
JPS491393B1 (en) 1974-01-12
DE2050076B2 (en) 1979-07-26
DE2050076A1 (en) 1972-04-13
SU430532A3 (en) 1974-05-30
CA959382A (en) 1974-12-17
NL7111264A (en) 1972-04-14
DK133604B (en) 1976-06-14
SE367443B (en) 1974-05-27
BE768301A (en) 1971-11-03
CS188118B2 (en) 1979-02-28

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees