GB774270A - Method of producing bodies of metals or matalloids - Google Patents
Method of producing bodies of metals or matalloidsInfo
- Publication number
- GB774270A GB774270A GB35016/53A GB3501653A GB774270A GB 774270 A GB774270 A GB 774270A GB 35016/53 A GB35016/53 A GB 35016/53A GB 3501653 A GB3501653 A GB 3501653A GB 774270 A GB774270 A GB 774270A
- Authority
- GB
- United Kingdom
- Prior art keywords
- molten
- rod
- silicon
- germanium
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000002184 metal Substances 0.000 title abstract 3
- 229910052751 metal Inorganic materials 0.000 title abstract 3
- 150000002739 metals Chemical class 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 abstract 7
- 239000000463 material Substances 0.000 abstract 6
- 150000001875 compounds Chemical class 0.000 abstract 5
- 239000012535 impurity Substances 0.000 abstract 5
- 239000011159 matrix material Substances 0.000 abstract 5
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- 229910052732 germanium Inorganic materials 0.000 abstract 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract 3
- 239000001257 hydrogen Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 230000006698 induction Effects 0.000 abstract 2
- 229910052752 metalloid Inorganic materials 0.000 abstract 2
- 150000002738 metalloids Chemical class 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000007787 solid Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- -1 boron Chemical class 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000010891 electric arc Methods 0.000 abstract 1
- 230000008014 freezing Effects 0.000 abstract 1
- 238000007710 freezing Methods 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 150000004820 halides Chemical class 0.000 abstract 1
- 239000001307 helium Substances 0.000 abstract 1
- 229910052734 helium Inorganic materials 0.000 abstract 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract 1
- 150000004678 hydrides Chemical class 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 238000007670 refining Methods 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 239000011669 selenium Substances 0.000 abstract 1
- 230000002459 sustained effect Effects 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B35/00—Boron; Compounds thereof
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
- C22B9/02—Refining by liquating, filtering, centrifuging, distilling, or supersonic wave action including acoustic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/10—Solid or liquid components, e.g. Verneuil method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/22—Furnaces without an endless core
- H05B6/30—Arrangements for remelting or zone melting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Acoustics & Sound (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- General Engineering & Computer Science (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
Abstract
In a method of producing a body of controlled purity of material consisting of a metal or a metalloid or a mixture thereof, a molten portion of such dimension that it is sustained solely by surface tension is formed on a solid matrix of the material and frozen progressively at its interface with the matrix whilst maintaining the <PICT:0774270/III/1> <PICT:0774270/III/2> size of the molten portion substantially constant by the addition of further material, which may be in the form of molten droplets or obtained by decomposing a gaseous compound or, as shown in Fig. 1 obtained by melting more solid from a rod 11 of the material by moving a molten zone 30 progressively upwards through the rod. Helium or other inert or reducing gas is passed through the chamber 16 by tubes 29 and 291, and the molten zone 30 set up at the bottom of the rod 11 and moved slowly upwards by raising the graphite heater 25 in the field of induction coil 24 by means of a rack and pinion 35, the impurities being carried to the top of the rod. Alternative apparatus effects the freezing from the molten zone by moving the rod of material slowly downwards through a fixed induction heater, while fresh material in the form of molten droplets is added to the liquid zone. Small amounts of acceptor or donor impurities may be added with silicon or germanium to form a rod of semiconductor having successive N and P type zones, and by starting with a single crystal as matrix a long single crystal may be obtained. As shown in Fig. 5, a reduction of a gaseous compound, e.g. silicon or germanium tetrachloride, by hydrogen in the reaction chamber 110 causes the semiconductor to fall on to the matrix 112 and form a molten zone there on. Hydrogen from source 126 is purified and dried at 136 and 137 and is supplied direct to the reaction chamber via valve 133 and also through retorts 114, one of which contains the semiconductor compound and the other or others compounds such as hydrides or halides of significant impurity elements e.g. members of groups 3 and 4 in the case of germanium and silicon, where it is saturated with these compounds, the retorts 114 being each associated with condensers 121 maintained at the required temperatures by heaters 118 and thermostats 120. The reduction is effected by raising the temperature in the chamber 110 to 1000-1100 DEG C. for germanium or 1100-1600 DEG C. for silicon. Alternatively the gas mixtures may be decomposed by passing them through hollow bores in electrodes to an electric arc, a transverse jet of hydrogen being used to control the arc position in order to produce a molten zone of the required dimensions on the matrix. In addition to the production, refining and growing of single crystals of silicon and germanium, the invention may be applied to other metalloids such as boron, gray tin. selenium and tellurium, and to the redistribution of impurities and growth of single crystals of copper and iron, and other metals. Redistribution of impurities may be effected by the multiple-pass processes and reverse-pass processes described in Specification 769,673. The growth of single crystals from a seed crystal is preferably effected at growth rates of 1/32 "-\ba1/4 " per minute, and in the case of growth by adding molten droplets to the molten zone the crystal may be rotated to obtain more uniform growth. Specification 723,179 also is referred to.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US333693XA | 1952-12-17 | 1952-12-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB774270A true GB774270A (en) | 1957-05-08 |
Family
ID=21870028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB35016/53A Expired GB774270A (en) | 1952-12-17 | 1953-12-16 | Method of producing bodies of metals or matalloids |
Country Status (6)
| Country | Link |
|---|---|
| BE (1) | BE525102A (en) |
| CH (1) | CH333693A (en) |
| DE (1) | DE1014332B (en) |
| FR (1) | FR1087946A (en) |
| GB (1) | GB774270A (en) |
| NL (1) | NL89230C (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3053639A (en) * | 1959-02-11 | 1962-09-11 | Union Carbide Corp | Method and apparatus for growing crystals |
| US3086850A (en) * | 1959-06-17 | 1963-04-23 | Itt | Method and means for growing and treating crystals |
| US3093456A (en) * | 1958-09-02 | 1963-06-11 | Texas Instruments Inc | Method for recovery and reuse of quartz containers |
| US3115469A (en) * | 1959-06-22 | 1963-12-24 | Monsanto Chemicals | Production of single crystals of ferrites |
| US3156533A (en) * | 1960-07-26 | 1964-11-10 | Imber Oscar | Crystal growth apparatus |
| US3185551A (en) * | 1959-06-05 | 1965-05-25 | Ind De Pierres Scient Hrand Dj | Process for manufacturing a tubular body made of synthetic material, and installation for carrying out this process |
| US3191924A (en) * | 1959-12-31 | 1965-06-29 | Siemens Ag | Device for mounting semiconductor rods in apparatus for crucible-free zone melting |
| US3205046A (en) * | 1959-06-05 | 1965-09-07 | Ind De Pierres Scient Hrand Dj | Rotary arbor for making synthetic stone |
| US3224844A (en) * | 1961-03-01 | 1965-12-21 | Philips Corp | Zone-melting method for metal compounds |
| US3245761A (en) * | 1962-10-11 | 1966-04-12 | Norton Co | Apparatus for making magnesium oxide crystals |
| US3314769A (en) * | 1963-05-08 | 1967-04-18 | Union Carbide Corp | Arc process and apparatus for growing crystals |
| US4379733A (en) * | 1981-10-02 | 1983-04-12 | Hughes Aircraft Company | Bicameral mode crystal growth apparatus and process |
| CN115198356A (en) * | 2022-07-15 | 2022-10-18 | 郑州大学 | Large-size metal single crystal with specific orientation and preparation method thereof |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1061527B (en) * | 1953-02-14 | 1959-07-16 | Siemens Ag | Process for zone-wise remelting of rods and other elongated workpieces |
| NL258754A (en) * | 1954-05-18 | 1900-01-01 | ||
| US2964396A (en) * | 1954-05-24 | 1960-12-13 | Siemens Ag | Producing semiconductor substances of highest purity |
| DE1017795B (en) * | 1954-05-25 | 1957-10-17 | Siemens Ag | Process for the production of the purest crystalline substances, preferably semiconductor substances |
| DE1253235B (en) * | 1954-05-25 | 1967-11-02 | Siemens Ag | Process for producing rod-shaped semiconductor crystals |
| DE1179382B (en) * | 1954-06-30 | 1964-10-08 | Siemens Ag | Process for producing an extremely pure, rod-shaped semiconductor crystal for the production of electrical semiconductor components such as directional conductors, transistors, etc. |
| DE1201073B (en) * | 1954-07-30 | 1965-09-16 | Siemens Ag | Process for producing a semiconducting alloy |
| NL203438A (en) * | 1955-01-14 | |||
| FR109723A (en) * | 1955-01-14 | |||
| DE1196046B (en) * | 1955-03-28 | 1965-07-01 | Siemens Ag | Process for producing a highly pure, crystalline rod from a conductive or semiconductive element |
| DE1141255B (en) * | 1958-03-05 | 1962-12-20 | Siemens Ag | Process for producing highly purified single-crystalline semiconductor rods |
| US2835614A (en) * | 1955-11-30 | 1958-05-20 | Raulaud Corp | Method of manufacturing crystalline material |
| DE1063870B (en) * | 1956-06-28 | 1959-08-20 | Gustav Weissenberg | Method and device for crucible-free growing of single crystals from high-purity silicon or germanium |
| DE1136308B (en) * | 1956-10-17 | 1962-09-13 | Siemens Ag | Process for the production of crystal rods from highly pure semiconducting materials |
| DE1181668B (en) * | 1956-10-17 | 1964-11-19 | Siemens Ag | Method for producing high-purity, rod-shaped semiconductor crystals by depositing the semiconductor from a gaseous compound of the semiconductor by means of an electrical gas discharge |
| BE562704A (en) * | 1956-11-28 | |||
| DE1207922B (en) * | 1957-04-30 | 1965-12-30 | Standard Elektrik Lorenz Ag | Process for producing high-purity semiconductor substances, in particular silicon |
| DE1169683B (en) * | 1957-05-31 | 1964-05-06 | Siemens Ag | Method for crucible-free zone melting of a semiconductor rod |
| DE1076623B (en) * | 1957-11-15 | 1960-03-03 | Siemens Ag | Device for crucible-free zone drawing of rod-shaped semiconductor material |
| DE1092576B (en) * | 1957-11-15 | 1960-11-10 | Siemens Ag | Power supply for the movable heating coil of a crucible-free zone pulling device inside a vessel |
| NL234451A (en) * | 1957-12-27 | |||
| NL235481A (en) * | 1958-02-19 | |||
| NL237618A (en) * | 1958-04-03 | |||
| BE581195A (en) * | 1958-07-30 | |||
| DE1216040B (en) * | 1958-09-12 | 1966-05-05 | Eternit Sa | Female connector for smooth insert pipes |
| NL250835A (en) * | 1959-04-30 | |||
| DE1128412B (en) * | 1959-12-17 | 1962-04-26 | Metallgesellschaft Ag | Process for the production of hyperpure silicon by the thermal decomposition of gaseous silicon compounds |
| NL133150C (en) * | 1959-12-23 | |||
| NL262164A (en) * | 1960-03-11 | |||
| DE1216257B (en) * | 1960-08-18 | 1966-05-12 | Kempten Elektroschmelz Gmbh | Process for the production of single crystals |
| US3232745A (en) * | 1960-12-05 | 1966-02-01 | Siemens Ag | Producing rod-shaped semiconductor crystals |
| NL275885A (en) * | 1961-03-14 | |||
| FR1315934A (en) * | 1961-12-15 | 1963-01-25 | Radiotechnique | Horizontal apparatus for purification and extraction of semiconductor crystals |
| DE1182207B (en) * | 1962-07-20 | 1964-11-26 | Siemens Ag | Method for producing a low-dislocation semiconductor single crystal by crucible-free zone melting |
| DE1284942B (en) * | 1964-06-30 | 1968-12-12 | Halbleiterwerk Frankfurt Oder | Device for the thermal treatment of crystals and melts, in particular made of semiconductor material |
| CN113337725A (en) * | 2021-06-29 | 2021-09-03 | 红河学院 | Method for enriching germanium from smelting slag |
-
0
- NL NL89230D patent/NL89230C/xx active
- BE BE525102D patent/BE525102A/xx unknown
-
1953
- 1953-09-04 FR FR1087946D patent/FR1087946A/en not_active Expired
- 1953-09-22 DE DEW12172A patent/DE1014332B/en active Pending
- 1953-12-16 GB GB35016/53A patent/GB774270A/en not_active Expired
- 1953-12-17 CH CH333693D patent/CH333693A/en unknown
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3093456A (en) * | 1958-09-02 | 1963-06-11 | Texas Instruments Inc | Method for recovery and reuse of quartz containers |
| US3053639A (en) * | 1959-02-11 | 1962-09-11 | Union Carbide Corp | Method and apparatus for growing crystals |
| US3205046A (en) * | 1959-06-05 | 1965-09-07 | Ind De Pierres Scient Hrand Dj | Rotary arbor for making synthetic stone |
| US3185551A (en) * | 1959-06-05 | 1965-05-25 | Ind De Pierres Scient Hrand Dj | Process for manufacturing a tubular body made of synthetic material, and installation for carrying out this process |
| US3086850A (en) * | 1959-06-17 | 1963-04-23 | Itt | Method and means for growing and treating crystals |
| US3115469A (en) * | 1959-06-22 | 1963-12-24 | Monsanto Chemicals | Production of single crystals of ferrites |
| US3191924A (en) * | 1959-12-31 | 1965-06-29 | Siemens Ag | Device for mounting semiconductor rods in apparatus for crucible-free zone melting |
| US3156533A (en) * | 1960-07-26 | 1964-11-10 | Imber Oscar | Crystal growth apparatus |
| US3224844A (en) * | 1961-03-01 | 1965-12-21 | Philips Corp | Zone-melting method for metal compounds |
| US3245761A (en) * | 1962-10-11 | 1966-04-12 | Norton Co | Apparatus for making magnesium oxide crystals |
| US3314769A (en) * | 1963-05-08 | 1967-04-18 | Union Carbide Corp | Arc process and apparatus for growing crystals |
| US4379733A (en) * | 1981-10-02 | 1983-04-12 | Hughes Aircraft Company | Bicameral mode crystal growth apparatus and process |
| CN115198356A (en) * | 2022-07-15 | 2022-10-18 | 郑州大学 | Large-size metal single crystal with specific orientation and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| NL89230C (en) | 1900-01-01 |
| BE525102A (en) | 1900-01-01 |
| CH333693A (en) | 1958-10-31 |
| FR1087946A (en) | 1955-03-01 |
| DE1014332B (en) | 1957-08-22 |
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