DE1141255B - A method of manufacturing a highly purified single crystalline Halbleiterstaebe - Google Patents

A method of manufacturing a highly purified single crystalline Halbleiterstaebe

Info

Publication number
DE1141255B
DE1141255B DES57210A DES0057210A DE1141255B DE 1141255 B DE1141255 B DE 1141255B DE S57210 A DES57210 A DE S57210A DE S0057210 A DES0057210 A DE S0057210A DE 1141255 B DE1141255 B DE 1141255B
Authority
DE
Germany
Prior art keywords
halbleiterstaebe
manufacturing
method
highly purified
single crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DES57210A
Other languages
German (de)
Inventor
Dr Karl Siebertz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Priority to DES57210A priority Critical patent/DE1141255B/en
Priority claimed from GB754759A external-priority patent/GB903144A/en
Publication of DE1141255B publication Critical patent/DE1141255B/en
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12Vaporous components, e.g. vapour-liquid-solid-growth
DES57210A 1958-03-05 1958-03-05 A method of manufacturing a highly purified single crystalline Halbleiterstaebe Granted DE1141255B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES57210A DE1141255B (en) 1958-03-05 1958-03-05 A method of manufacturing a highly purified single crystalline Halbleiterstaebe

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DES57210A DE1141255B (en) 1958-03-05 1958-03-05 A method of manufacturing a highly purified single crystalline Halbleiterstaebe
CH7014359A CH425737A (en) 1958-03-05 1959-02-27 A method of manufacturing a single-crystal semiconductor rods
GB754759A GB903144A (en) 1955-05-23 1959-03-04 Improvements in or relating to the production of semi-conductor rods

Publications (1)

Publication Number Publication Date
DE1141255B true DE1141255B (en) 1962-12-20

Family

ID=7491652

Family Applications (1)

Application Number Title Priority Date Filing Date
DES57210A Granted DE1141255B (en) 1958-03-05 1958-03-05 A method of manufacturing a highly purified single crystalline Halbleiterstaebe

Country Status (2)

Country Link
CH (1) CH425737A (en)
DE (1) DE1141255B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1263714B (en) * 1963-09-19 1968-03-21 Ass Elect Ind A method for epitaxially growing a layer of semiconductor material
DE1519827B1 (en) * 1963-05-02 1970-02-12 Monsanto Co An apparatus for forming thin rods having different diameters of semiconductor material
DE1544305B1 (en) * 1965-12-08 1970-07-23 Sanyo Electric Co A method of growing at least one doped semiconductor crystal layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE525102A (en) * 1952-12-17 1900-01-01
DE894293C (en) * 1951-06-29 1953-10-22 Western Electric Co A process for producing a crystal of semiconductor material
FR1125277A (en) * 1954-06-13 1956-10-29 Siemens Ag A method of preparation of highly pure crystalline substances, preferably for their use as semi-conductive devices, and devices in accordance with ceuxobtenus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE894293C (en) * 1951-06-29 1953-10-22 Western Electric Co A process for producing a crystal of semiconductor material
BE525102A (en) * 1952-12-17 1900-01-01
DE1017795B (en) * 1954-05-25 1957-10-17 Siemens Ag A process for preparing reinster crystalline substances, preferably semiconductor substances
FR1125277A (en) * 1954-06-13 1956-10-29 Siemens Ag A method of preparation of highly pure crystalline substances, preferably for their use as semi-conductive devices, and devices in accordance with ceuxobtenus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1519827B1 (en) * 1963-05-02 1970-02-12 Monsanto Co An apparatus for forming thin rods having different diameters of semiconductor material
DE1263714B (en) * 1963-09-19 1968-03-21 Ass Elect Ind A method for epitaxially growing a layer of semiconductor material
DE1544305B1 (en) * 1965-12-08 1970-07-23 Sanyo Electric Co A method of growing at least one doped semiconductor crystal layer

Also Published As

Publication number Publication date
CH425737A (en) 1966-12-15

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