DE944209C - A process for preparing Halbleiterkoerpern - Google Patents

A process for preparing Halbleiterkoerpern

Info

Publication number
DE944209C
DE944209C DEW5787A DEW0005787A DE944209C DE 944209 C DE944209 C DE 944209C DE W5787 A DEW5787 A DE W5787A DE W0005787 A DEW0005787 A DE W0005787A DE 944209 C DE944209 C DE 944209C
Authority
DE
Germany
Prior art keywords
halbleiterkoerpern
preparing
process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEW5787A
Other languages
German (de)
Inventor
Gordon Kidd Teal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Western Electric Co Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US168184A priority Critical patent/US2727840A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Priority to US239609A priority patent/US2656496A/en
Application granted granted Critical
Publication of DE944209C publication Critical patent/DE944209C/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063Electrolytic etching
DEW5787A 1950-06-15 1951-05-12 A process for preparing Halbleiterkoerpern Expired DE944209C (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US168184A US2727840A (en) 1950-06-15 1950-06-15 Methods of producing semiconductive bodies
US239609A US2656496A (en) 1951-07-31 1951-07-31 Semiconductor translating device

Publications (1)

Publication Number Publication Date
DE944209C true DE944209C (en) 1956-06-07

Family

ID=26863873

Family Applications (1)

Application Number Title Priority Date Filing Date
DEW5787A Expired DE944209C (en) 1950-06-15 1951-05-12 A process for preparing Halbleiterkoerpern

Country Status (6)

Country Link
US (1) US2727840A (en)
BE (1) BE503719A (en)
DE (1) DE944209C (en)
FR (1) FR1036842A (en)
GB (1) GB706858A (en)
NL (1) NL88324C (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1032852B (en) * 1953-11-24 1958-06-26 Siemens Und Halske Ag Method and device for the production of semiconductor crystals after the crystal pulling method from the melt
DE973231C (en) * 1953-01-20 1959-12-24 Telefunken Gmbh A process for the production of single crystals from a melt by drawing
DE1077187B (en) * 1958-11-13 1960-03-10 Werk Fuer Bauelemente Der Nach A method for producing single crystals of semiconducting materials
DE1130414B (en) * 1959-04-10 1962-05-30 Intermetall Method and device for pulling single crystals
DE1140547B (en) * 1959-04-27 1962-12-06 Siemens Ag A method for producing crystalline Halbleiterkoerpern with great life Minoritaetstraeger
DE1191789B (en) * 1960-10-25 1965-04-29 Siemens Ag A method for pulling single-crystal preferably Halbleiterstaeben
DE1227874B (en) * 1959-04-10 1966-11-03 Itt Ind Gmbh A method for producing n-doped silicon single
DE1268114B (en) * 1957-07-26 1968-05-16 Sony Corp A process for producing an npn-doped semiconductor single crystal

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2768914A (en) * 1951-06-29 1956-10-30 Bell Telephone Labor Inc Process for producing semiconductive crystals of uniform resistivity
US2841860A (en) * 1952-08-08 1958-07-08 Sylvania Electric Prod Semiconductor devices and methods
US2840494A (en) * 1952-12-31 1958-06-24 Henry W Parker Manufacture of transistors
US3094634A (en) * 1953-06-30 1963-06-18 Rca Corp Radioactive batteries
US2851341A (en) * 1953-07-08 1958-09-09 Shirley I Weiss Method and equipment for growing crystals
BE553173A (en) * 1954-05-10
US2743200A (en) * 1954-05-27 1956-04-24 Bell Telephone Labor Inc Method of forming junctions in silicon
US2950219A (en) * 1955-02-23 1960-08-23 Rauland Corp Method of manufacturing semiconductor crystals
US3173765A (en) * 1955-03-18 1965-03-16 Itt Method of making crystalline silicon semiconductor material
US2921362A (en) * 1955-06-27 1960-01-19 Honeywell Regulator Co Process for the production of semiconductor devices
US2935478A (en) * 1955-09-06 1960-05-03 Gen Electric Co Ltd Production of semi-conductor bodies
US2996918A (en) * 1955-12-27 1961-08-22 Ibm Junction transistor thermostat
US2889240A (en) * 1956-03-01 1959-06-02 Rca Corp Method and apparatus for growing semi-conductive single crystals from a melt
NL218610A (en) * 1956-07-02
US2975036A (en) * 1956-10-05 1961-03-14 Motorola Inc Crystal pulling apparatus
US3002821A (en) * 1956-10-22 1961-10-03 Texas Instruments Inc Means for continuous fabrication of graded junction transistors
DE2548046C3 (en) * 1975-10-27 1982-12-02 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen, De
US4627887A (en) * 1980-12-11 1986-12-09 Sachs Emanuel M Melt dumping in string stabilized ribbon growth
US4352785A (en) * 1982-01-04 1982-10-05 Western Electric Co., Inc. Crystal grower with torque supportive collapsible pulling mechanism

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
FR957542A (en) * 1941-04-04 1950-02-23
NL67322C (en) * 1941-12-19
US2514879A (en) * 1945-07-13 1950-07-11 Purdue Research Foundation Alloys and rectifiers made thereof
US2505633A (en) * 1946-03-18 1950-04-25 Purdue Research Foundation Alloys of germanium and method of making same
US2504628A (en) * 1946-03-23 1950-04-18 Purdue Research Foundation Electrical device with germanium alloys
US2447829A (en) * 1946-08-14 1948-08-24 Purdue Research Foundation Germanium-helium alloys and rectifiers made therefrom
US2567970A (en) * 1947-12-24 1951-09-18 Bell Telephone Labor Inc Semiconductor comprising silicon and method of making it

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE973231C (en) * 1953-01-20 1959-12-24 Telefunken Gmbh A process for the production of single crystals from a melt by drawing
DE1032852B (en) * 1953-11-24 1958-06-26 Siemens Und Halske Ag Method and device for the production of semiconductor crystals after the crystal pulling method from the melt
DE1268114B (en) * 1957-07-26 1968-05-16 Sony Corp A process for producing an npn-doped semiconductor single crystal
DE1077187B (en) * 1958-11-13 1960-03-10 Werk Fuer Bauelemente Der Nach A method for producing single crystals of semiconducting materials
DE1130414B (en) * 1959-04-10 1962-05-30 Intermetall Method and device for pulling single crystals
DE1227874B (en) * 1959-04-10 1966-11-03 Itt Ind Gmbh A method for producing n-doped silicon single
DE1140547B (en) * 1959-04-27 1962-12-06 Siemens Ag A method for producing crystalline Halbleiterkoerpern with great life Minoritaetstraeger
DE1191789B (en) * 1960-10-25 1965-04-29 Siemens Ag A method for pulling single-crystal preferably Halbleiterstaeben

Also Published As

Publication number Publication date
US2727840A (en) 1955-12-20
NL88324C (en)
FR1036842A (en) 1953-09-11
GB706858A (en) 1954-04-07
BE503719A (en)

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