GB706858A - Production of semiconductive bodies - Google Patents

Production of semiconductive bodies

Info

Publication number
GB706858A
GB706858A GB13634/51A GB1363451A GB706858A GB 706858 A GB706858 A GB 706858A GB 13634/51 A GB13634/51 A GB 13634/51A GB 1363451 A GB1363451 A GB 1363451A GB 706858 A GB706858 A GB 706858A
Authority
GB
United Kingdom
Prior art keywords
molten
mass
germanium
reservoir
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB13634/51A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Priority claimed from US239609A external-priority patent/US2656496A/en
Publication of GB706858A publication Critical patent/GB706858A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching

Abstract

A semi-conductor body is produced by melting a mass of semi-conductor material, introducing a seed body therein, and altering the donor or acceptor impurity content of the molten mass. In Fig. 1, a mass of semi-conductor material 16, which may be germanium or silicon, is melted in an induction heated crucible. A seed body 19 is suspended in the molten mass, and may be raised by means of a wire 23 controlled <PICT:0706858/III/1> <PICT:0706858/III/2> by electric motor 27 at a rate to draw some of the molten material therewith so that the material subsequently crystallizes. A jet 28 which supplies a gas such as hydrogen containing water vapour is arranged to play upon the material after withdrawal. The apparatus is enclosed in a bell jar 11 through which hydrogen or helium circulates. Pellets containing donor or acceptor material are suspended in apertures in a plate 34 which may be rocked to slide against plate 32 so that a selected pellet rolls down tube 33 into the molten mass. By this means the material may be converted to the opposite conductivity type or its conductive properties may be varied. The arrangement enables a single crystal having successive portions of N P N P conductivity to be built up. Phosphorus, antimony and arsenic are specified as suitable donor materials, and gallium, boron, aluminium and indium as acceptor materials. As an example, a 20 milligram pellet of 0.2 per cent. gallium in germanium was added to 50 grams of molten germanium to convert to P-type, and then a 0.5 milligram pellet of 6.4 per cent. antimony in germanium was added to convert back to N-type, providing a crystal having a P type zone between two N zones. Fig. 4 shows an alternative arrangement in which molten semi-conductor material flows from a reservoir 41 through a trough 40 to a second reservoir 44, and thence via pumps 46 back to reservoir 41. A seed body 190 is partially immersed in the material in trough 40 and then withdrawn by a mechanism (not shown). Rods 48a and 48b containing donor and acceptor material respectively may be inserted into the molten flow to change the conductivity. A purification chamber may be provided in the system after reservoir 44. Alternatively, the impurity may be introduced into the mass by a gas such as boron hydride or antimony hydride which is directed against the surface of the melt. Specification 706,849 is referred to.
GB13634/51A 1950-06-15 1951-06-08 Production of semiconductive bodies Expired GB706858A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US168184A US2727840A (en) 1950-06-15 1950-06-15 Methods of producing semiconductive bodies
US239609A US2656496A (en) 1951-07-31 1951-07-31 Semiconductor translating device

Publications (1)

Publication Number Publication Date
GB706858A true GB706858A (en) 1954-04-07

Family

ID=26863873

Family Applications (1)

Application Number Title Priority Date Filing Date
GB13634/51A Expired GB706858A (en) 1950-06-15 1951-06-08 Production of semiconductive bodies

Country Status (6)

Country Link
US (1) US2727840A (en)
BE (1) BE503719A (en)
DE (1) DE944209C (en)
FR (1) FR1036842A (en)
GB (1) GB706858A (en)
NL (1) NL88324C (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2743200A (en) * 1954-05-27 1956-04-24 Bell Telephone Labor Inc Method of forming junctions in silicon
US2768914A (en) * 1951-06-29 1956-10-30 Bell Telephone Labor Inc Process for producing semiconductive crystals of uniform resistivity

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2841860A (en) * 1952-08-08 1958-07-08 Sylvania Electric Prod Semiconductor devices and methods
US2840494A (en) * 1952-12-31 1958-06-24 Henry W Parker Manufacture of transistors
DE973231C (en) * 1953-01-20 1959-12-24 Telefunken Gmbh Process for the production of single crystals by pulling from a melt
US3094634A (en) * 1953-06-30 1963-06-18 Rca Corp Radioactive batteries
US2851341A (en) * 1953-07-08 1958-09-09 Shirley I Weiss Method and equipment for growing crystals
DE1032852B (en) * 1953-11-24 1958-06-26 Siemens Und Halske Ag Process and device for the production of semiconductor crystals by the crystal pulling process from the melt
BE553173A (en) * 1954-05-10
US2950219A (en) * 1955-02-23 1960-08-23 Rauland Corp Method of manufacturing semiconductor crystals
US3173765A (en) * 1955-03-18 1965-03-16 Itt Method of making crystalline silicon semiconductor material
US2921362A (en) * 1955-06-27 1960-01-19 Honeywell Regulator Co Process for the production of semiconductor devices
US2935478A (en) * 1955-09-06 1960-05-03 Gen Electric Co Ltd Production of semi-conductor bodies
US2996918A (en) * 1955-12-27 1961-08-22 Ibm Junction transistor thermostat
US2889240A (en) * 1956-03-01 1959-06-02 Rca Corp Method and apparatus for growing semi-conductive single crystals from a melt
NL218610A (en) * 1956-07-02
US2975036A (en) * 1956-10-05 1961-03-14 Motorola Inc Crystal pulling apparatus
US3002821A (en) * 1956-10-22 1961-10-03 Texas Instruments Inc Means for continuous fabrication of graded junction transistors
US3070465A (en) * 1957-07-26 1962-12-25 Sony Corp Method of manufacturing a grown type semiconductor device
DE1077187B (en) * 1958-11-13 1960-03-10 Werk Fuer Bauelemente Der Nach Process for the production of single crystals from semiconducting materials
DE1227874B (en) * 1959-04-10 1966-11-03 Itt Ind Ges Mit Beschraenkter Process for the production of n-doped silicon single crystals
DE1130414B (en) * 1959-04-10 1962-05-30 Elektronik M B H Method and device for pulling single crystals
DE1140547B (en) * 1959-04-27 1962-12-06 Siemens Ag Process for the production of crystalline semiconductor bodies with a long service life for the minority carriers
DE1191789B (en) * 1960-10-25 1965-04-29 Siemens Ag Method for drawing preferably single-crystal semiconductor rods
DE2548046C3 (en) * 1975-10-27 1982-12-02 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Method of pulling single crystal silicon rods
US4627887A (en) * 1980-12-11 1986-12-09 Sachs Emanuel M Melt dumping in string stabilized ribbon growth
US4352785A (en) * 1982-01-04 1982-10-05 Western Electric Co., Inc. Crystal grower with torque supportive collapsible pulling mechanism

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
FR957542A (en) * 1941-04-04 1950-02-23
BE466804A (en) * 1941-12-19
US2514879A (en) * 1945-07-13 1950-07-11 Purdue Research Foundation Alloys and rectifiers made thereof
US2505633A (en) * 1946-03-18 1950-04-25 Purdue Research Foundation Alloys of germanium and method of making same
US2504628A (en) * 1946-03-23 1950-04-18 Purdue Research Foundation Electrical device with germanium alloys
US2447829A (en) * 1946-08-14 1948-08-24 Purdue Research Foundation Germanium-helium alloys and rectifiers made therefrom
US2567970A (en) * 1947-12-24 1951-09-18 Bell Telephone Labor Inc Semiconductor comprising silicon and method of making it

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2768914A (en) * 1951-06-29 1956-10-30 Bell Telephone Labor Inc Process for producing semiconductive crystals of uniform resistivity
US2743200A (en) * 1954-05-27 1956-04-24 Bell Telephone Labor Inc Method of forming junctions in silicon

Also Published As

Publication number Publication date
BE503719A (en)
NL88324C (en)
FR1036842A (en) 1953-09-11
US2727840A (en) 1955-12-20
DE944209C (en) 1956-06-07

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