DE1191789B - A method for pulling single-crystal preferably Halbleiterstaeben - Google Patents

A method for pulling single-crystal preferably Halbleiterstaeben

Info

Publication number
DE1191789B
DE1191789B DES70987A DES0070987A DE1191789B DE 1191789 B DE1191789 B DE 1191789B DE S70987 A DES70987 A DE S70987A DE S0070987 A DES0070987 A DE S0070987A DE 1191789 B DE1191789 B DE 1191789B
Authority
DE
Germany
Prior art keywords
halbleiterstaeben
method
pulling single
crystal preferably
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES70987A
Other languages
German (de)
Inventor
Dipl-Phys Dr Wolfgang Henning
Dipl-Phys Dr Heinz Dorendorf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Priority to DES70987A priority Critical patent/DE1191789B/en
Publication of DE1191789B publication Critical patent/DE1191789B/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials
DES70987A 1960-10-25 1960-10-25 A method for pulling single-crystal preferably Halbleiterstaeben Pending DE1191789B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES70987A DE1191789B (en) 1960-10-25 1960-10-25 A method for pulling single-crystal preferably Halbleiterstaeben

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES70987A DE1191789B (en) 1960-10-25 1960-10-25 A method for pulling single-crystal preferably Halbleiterstaeben

Publications (1)

Publication Number Publication Date
DE1191789B true DE1191789B (en) 1965-04-29

Family

ID=7502165

Family Applications (1)

Application Number Title Priority Date Filing Date
DES70987A Pending DE1191789B (en) 1960-10-25 1960-10-25 A method for pulling single-crystal preferably Halbleiterstaeben

Country Status (1)

Country Link
DE (1) DE1191789B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998011280A1 (en) * 1996-09-13 1998-03-19 Seh America, Inc. Apparatus and method for improving mechanical strength of the neck section of czochralski silicon crystal
DE10058329A1 (en) * 2000-11-24 2002-05-29 Georg Mueller Process for growing single crystals, especially silicon single crystals comprises pulling the single crystals with rotation from a heated crucible containing a melt made from the crystal material, and cooling the crystals

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE944209C (en) * 1950-06-15 1956-06-07 Western Electric Co A process for preparing Halbleiterkoerpern
DE1044768B (en) * 1954-03-02 1958-11-27 Siemens Ag Method and device for pulling a stabfoermigen crystalline body, preferably Halbleiterkoerpers
DE1051806B (en) * 1956-11-28 1959-03-05 Philips Nv Method and apparatus for Aufwaertsziehen of single crystals from a melt

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE944209C (en) * 1950-06-15 1956-06-07 Western Electric Co A process for preparing Halbleiterkoerpern
DE1044768B (en) * 1954-03-02 1958-11-27 Siemens Ag Method and device for pulling a stabfoermigen crystalline body, preferably Halbleiterkoerpers
DE1051806B (en) * 1956-11-28 1959-03-05 Philips Nv Method and apparatus for Aufwaertsziehen of single crystals from a melt

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998011280A1 (en) * 1996-09-13 1998-03-19 Seh America, Inc. Apparatus and method for improving mechanical strength of the neck section of czochralski silicon crystal
US5827367A (en) * 1996-09-13 1998-10-27 Seh America Apparatus for improving mechanical strength of the neck section of czochralski silicon crystal
US5865887A (en) * 1996-09-13 1999-02-02 Seh America, Inc. Method for improving mechanical strength of the neck section of czochralski silicon crystal
DE10058329A1 (en) * 2000-11-24 2002-05-29 Georg Mueller Process for growing single crystals, especially silicon single crystals comprises pulling the single crystals with rotation from a heated crucible containing a melt made from the crystal material, and cooling the crystals

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