CS188118B2 - Facility for making the tubes from the silicon or other semiconductive material - Google Patents

Facility for making the tubes from the silicon or other semiconductive material

Info

Publication number
CS188118B2
CS188118B2 CS716329A CS632971A CS188118B2 CS 188118 B2 CS188118 B2 CS 188118B2 CS 716329 A CS716329 A CS 716329A CS 632971 A CS632971 A CS 632971A CS 188118 B2 CS188118 B2 CS 188118B2
Authority
CS
Czechoslovakia
Prior art keywords
facility
tubes
silicon
making
semiconductive material
Prior art date
Application number
CS716329A
Other languages
Czech (cs)
Inventor
Wolfgang Dietze
Konrad Reuschel
Herbert Sandmann
Original Assignee
Wolfgang Dietze
Konrad Reuschel
Herbert Sandmann
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wolfgang Dietze, Konrad Reuschel, Herbert Sandmann filed Critical Wolfgang Dietze
Publication of CS188118B2 publication Critical patent/CS188118B2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
CS716329A 1970-10-12 1971-09-03 Facility for making the tubes from the silicon or other semiconductive material CS188118B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2050076A DE2050076C3 (en) 1970-10-12 1970-10-12 Device for manufacturing tubes from semiconductor material

Publications (1)

Publication Number Publication Date
CS188118B2 true CS188118B2 (en) 1979-02-28

Family

ID=5784889

Family Applications (1)

Application Number Title Priority Date Filing Date
CS716329A CS188118B2 (en) 1970-10-12 1971-09-03 Facility for making the tubes from the silicon or other semiconductive material

Country Status (13)

Country Link
US (1) US3746496A (en)
JP (1) JPS491393B1 (en)
BE (1) BE768301A (en)
CA (1) CA959382A (en)
CH (1) CH528301A (en)
CS (1) CS188118B2 (en)
DE (1) DE2050076C3 (en)
DK (1) DK133604C (en)
FR (1) FR2111084A5 (en)
GB (1) GB1347368A (en)
NL (1) NL7111264A (en)
SE (1) SE367443B (en)
SU (1) SU430532A3 (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3950479A (en) * 1969-04-02 1976-04-13 Siemens Aktiengesellschaft Method of producing hollow semiconductor bodies
US4015922A (en) * 1970-12-09 1977-04-05 Siemens Aktiengesellschaft Apparatus for the manufacture of tubular bodies of semiconductor material
US3979490A (en) * 1970-12-09 1976-09-07 Siemens Aktiengesellschaft Method for the manufacture of tubular bodies of semiconductor material
US4034705A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
DE2322952C3 (en) * 1973-05-07 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of trays for holding crystal disks in diffusion and tempering processes
DE2518853C3 (en) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for separating elemental silicon from a reaction gas
JPS58177460U (en) * 1982-05-19 1983-11-28 後藤　定三 color lock
JP2725081B2 (en) * 1990-07-05 1998-03-09 富士通株式会社 Heat treatment equipment for semiconductor device manufacturing
US6228297B1 (en) * 1998-05-05 2001-05-08 Rohm And Haas Company Method for producing free-standing silicon carbide articles
US9683286B2 (en) * 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
JP5309963B2 (en) * 2007-12-28 2013-10-09 三菱マテリアル株式会社 Polycrystalline silicon silicon core rod assembly and manufacturing method thereof, polycrystalline silicon manufacturing apparatus, and polycrystalline silicon manufacturing method
CN102027156A (en) * 2008-03-26 2011-04-20 Gt太阳能公司 Systems and methods for gas distribution in a chemical vapor deposition reactor
US20110159214A1 (en) * 2008-03-26 2011-06-30 Gt Solar, Incorporated Gold-coated polysilicon reactor system and method
ES2636966T3 (en) * 2008-06-23 2017-10-10 Gtat Corporation Mandrel and bridge connection points for tube filaments in a chemical vapor deposition reactor
US10494714B2 (en) * 2011-01-03 2019-12-03 Oci Company Ltd. Chuck for chemical vapor deposition systems and related methods therefor
CN103158202B (en) * 2011-12-09 2016-07-06 洛阳金诺机械工程有限公司 A kind of bridging method of hollow silicon core
CN103158201B (en) * 2011-12-09 2016-03-02 洛阳金诺机械工程有限公司 The bridging method of a kind of hollow silicon core and solid silicon core
CN103158200B (en) * 2011-12-09 2016-07-06 洛阳金诺机械工程有限公司 A kind of bridging method of C-shaped silicon core
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
US10450649B2 (en) * 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
WO2020069722A1 (en) * 2018-10-01 2020-04-09 Flowil International Lighting (Holding) B.V. Linear led light source and manufacturing method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2955566A (en) * 1957-04-16 1960-10-11 Chilean Nitrate Sales Corp Dissociation-deposition unit for the production of chromium
NL124690C (en) * 1958-05-29
NL295321A (en) * 1958-12-09
GB944009A (en) * 1960-01-04 1963-12-11 Texas Instruments Ltd Improvements in or relating to the deposition of silicon on a tantalum article
DE1223804B (en) * 1961-01-26 1966-09-01 Siemens Ag Device for the extraction of pure semiconductor material, such as silicon

Also Published As

Publication number Publication date
DE2050076A1 (en) 1972-04-13
GB1347368A (en) 1974-02-27
CA959382A (en) 1974-12-17
DK133604C (en) 1976-11-01
DE2050076B2 (en) 1979-07-26
NL7111264A (en) 1972-04-14
FR2111084A5 (en) 1972-06-02
SE367443B (en) 1974-05-27
CH528301A (en) 1972-09-30
DK133604B (en) 1976-06-14
BE768301A (en) 1971-11-03
SU430532A3 (en) 1974-05-30
US3746496A (en) 1973-07-17
JPS491393B1 (en) 1974-01-12
DE2050076C3 (en) 1980-06-26

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