CN103158200B - A kind of bridging method of C-shaped silicon core - Google Patents
A kind of bridging method of C-shaped silicon core Download PDFInfo
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- CN103158200B CN103158200B CN201110408215.3A CN201110408215A CN103158200B CN 103158200 B CN103158200 B CN 103158200B CN 201110408215 A CN201110408215 A CN 201110408215A CN 103158200 B CN103158200 B CN 103158200B
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Abstract
A kind of bridging method of C-shaped silicon core, belong to the overlapping technology of silicon core, including horizontal C-shaped silicon core (1) and perpendicular C-shaped silicon core (5), the two ends of described horizontal C-shaped silicon core (1) are connected formation " ∏ " character form structure respectively through the upper end of mortice and tenon joint, grafting or clamping with two perpendicular C-shaped silicon core (5)；The intensity of C-shaped silicon core of the present invention to be far longer than the cylindrical structural of solid silicon core and square silicon core, after described C-shaped silicon core intensity increases, its resistant to lodging will far better than existing solid silicon core, and it is compared with solid silicon core, there is weight of substantially equal, but diameter is far longer than the beneficial features of solid silicon core, for the basic patent of original creation.
Description
[technical field]
The invention belongs to the overlapping technology of silicon core, especially relate to the bridging method of a kind of C-shaped silicon core or other crystalline material.
[background technology]
Known, producing silicon core overlapping technology in the process of polysilicon at Siemens Method is a very important technology, and it is mainly used in a link of production of polysilicon, i.e. reduction reaction process.The principle of described reduction reaction process is: reduction reaction is to carry out in an airtight reduction furnace, is first overlapped to form several closed-loop paths with silicon core in reduction furnace, namely " bridging " in jargon before shove charge；Each closed-loop path is formed " ∏ " character form structure by two perpendicular silicon cores and a horizontal silicon core；Two perpendicular silicon cores of each closed-loop path are connected on two electrodes on furnace bottom respectively, two electrodes connect the both positive and negative polarity of DC source respectively, then silicon core is heated, add and hanker one group of silicon core overlapped and be equivalent to a big resistance, then in airtight reduction furnace, pass into hydrogen and trichlorosilane, proceed by reduction reaction；So, required polysilicon will generate at silicon wicking surface.The above is exactly silicon core and overlapping technology application in production of polysilicon thereof.
Produce in the process of polysilicon at existing Siemens Method; silicon core diameter owing to using is generally the solid silicon core of φ about 8mm or cuts the square silicon core formed through line; the silicon core overlapped is in normal reduction course of reaction; the silicon generated constantly is deposited on silicon wicking surface; the surface area of silicon core is also increasing; collision opportunity and the quantity of depositional plane (silicon wicking surface) are also increased by reactant gas molecules therewith; when the sedimentation rate of unit are is constant, the polysilicon amount that surface area more then deposits is also the more；Therefore when polycrystalline silicon growth, the reduction reaction time is more long, and the diameter of silicon core is more big, and the growth efficiency of polysilicon is also more high, is so possible not only to be greatly improved production efficiency, also reduces production cost simultaneously；But existing solid silicon core or side's silicon core are in reduction, all cannot well overcome owing to the silicon core intensity of overlap joint " solid silicon core or side's silicon core " is relatively low, thus cause produced silicon core lodging phenomenon in reduction process, to producing the increase bringing unnecessary trouble and cost；Lodging phenomenon described in silicon core refers to that silicon core grows in airtight container, and the consequence brought due to filled circles silicon core or side's technique of silicon core own is:
1), solid silicon core；
The diameter of solid silicon core is generally at about 8～10MM, 8～10MM growing to 120～150MM is example, and during beginning, growth is comparatively slow, and the later stage, the speed of growth was also accelerated therewith along with the increasing of diameter；If directly adopting the solid silicon core of major diameter, then the weight of silicon core body can be caused to increase；And in the pulling process of major diameter solid silicon core, owing to obtain larger-diameter silicon core, draw rate to control to very slow, and production efficiency is low；And owing to being relatively large in diameter in growth course; stretch difficulty high; and drawing that every time only can be a small amount of; namely draw radical will be restricted; for dilated diameter problem prior art also having a lot of difficult points cannot overcome; electric energy and protective gas that major diameter silicon core drawing simultaneously consumes are consequently increased, and major diameter silicon core is also inconvenient for following process and carrying simultaneously；
2), side's silicon core；
Occur in that the square silicon core that line cuts in the market, owing to being in cutting on line process, crystal is subject to the microseism in diamond wire saw, make finished product side's silicon in-core that more naked eyes micro-fractures inconspicuous occur, bigger for the impact of slight crack in the moment of silicon core growth energising, fracture or the amount of collapsing in silicon core growth course are increased considerably, and the lighter causes that this group silicon core cannot grow, and causes blowing out time serious.
The silicon core so adopting major diameter carries out overlapping the fast-growth realizing polycrystalline rod and improving the technology barriers that the intensity of silicon core self has just become those skilled in the art to be difficult to overcome；So, for how strengthening the long-term demand that silicon core diameter is also those skilled in the art.
[summary of the invention]
In order to overcome the deficiency in background technology, patent families of the present invention discloses the processing technique of C-shaped silicon core, the present invention then discloses the bridging method of a kind of C-shaped silicon core for the follow-up use of C-shaped silicon core, the present invention is resistant to lodging will far better than existing solid circles silicon core, and the present invention is compared with solid circles silicon core, there is weight of substantially equal, but diameter is far longer than the beneficial features of solid silicon core.
In order to realize the purpose of foregoing invention, the present invention adopts the following technical scheme that
The bridging method of a kind of C-shaped silicon core, including horizontal C-shaped silicon core and perpendicular C-shaped silicon core, the two ends of described horizontal C-shaped silicon core are connected formation " ∏ " character form structure respectively through the upper end of mortice and tenon joint, grafting or clamping with two perpendicular C-shaped silicon core.
The bridging method of described C-shaped silicon core, the two ends of described horizontal C-shaped silicon core are connected formation " ∏ " character form structure by mortice and tenon joint with the upper end of two perpendicular C-shaped silicon core, it is respectively provided with connection inclined-plane in the bottom, two ends of horizontal C-shaped silicon core, described connection inclined-plane is corresponding with the connection inclined-plane being arranged on two perpendicular C-shaped silicon core upper ends, connect in the two of horizontal C-shaped silicon core and inclined-plane is respectively equipped with reducing fourth of the twelve Earthly Branches groove or widens tenon block, the connection inclined-plane of perpendicular C-shaped silicon core upper end is respectively equipped with and widens tenon block or reducing fourth of the twelve Earthly Branches groove, when namely two connection inclined-planes of horizontal C-shaped silicon core being set to reducing fourth of the twelve Earthly Branches groove, described two perpendicular connection inclined-planes, C-shaped silicon core upper end are just set to widen tenon block, " ∏ " character form structure is formed by the two ends clamping of perpendicular C-shaped silicon core upper end Yu horizontal C-shaped silicon core.
The bridging method of described C-shaped silicon core, the two ends of described horizontal C-shaped silicon core are connected formation " ∏ " character form structure by grafting with the upper end of two perpendicular C-shaped silicon core, the described bottom, two ends being plugged to horizontal C-shaped silicon core is respectively equipped with connection inclined-plane, the opposite side of two perpendicular C-shaped silicon core upper ends is respectively equipped with connection inclined-plane, inserting one end of " L " shape joint in the two ends C-shaped aperture of described horizontal C-shaped silicon core respectively, the other end of two " L " shape joint is respectively inserted in the upper end C shape of two perpendicular C-shaped silicon core and forms " ∏ " character form structure.
The bridging method of described C-shaped silicon core, the two ends of described horizontal C-shaped silicon core are connected formation " ∏ " character form structure by clamping with the upper end of two perpendicular C-shaped silicon core, it is respectively arranged at two ends with insert-connecting plate in horizontal C-shaped silicon core, the top of described two perpendicular C-shaped silicon core is respectively equipped with interface, and the interface grafting on the insert-connecting plate at horizontal C-shaped silicon core two ends and two perpendicular C-shaped silicon core tops forms " ∏ " character form structure.
The bridging method of described C-shaped silicon core, the two ends of described horizontal C-shaped silicon core are connected another replacing structure of formation " ∏ " character form structure by clamping with the upper end of two perpendicular C-shaped silicon core, it is respectively equipped with interface on horizontal C-shaped silicon core both sides, the top of described two perpendicular C-shaped silicon core is respectively equipped with insert-connecting plate, and the interface grafting on the insert-connecting plate of the setting on two perpendicular C-shaped silicon core tops and horizontal C-shaped silicon core both sides forms " ∏ " character form structure.
The bridging method of described C-shaped silicon core, the two ends of described horizontal C-shaped silicon core are connected the 3rd replacing structure of formation " ∏ " character form structure by clamping with the upper end of two perpendicular C-shaped silicon core, it is respectively arranged at two ends with insert-connecting plate in horizontal C-shaped silicon core, the top of described two perpendicular C-shaped silicon core is respectively equipped with otch, the insert-connecting plate that horizontal C-shaped silicon core two ends are arranged is placed on two perpendicular C-shaped silicon core upper ends, and horizontal C-shaped silicon core two ends are connected formation " ∏ " character form structure with the vertical plane of otch.
The bridging method of described C-shaped silicon core, the lower end of two perpendicular C-shaped silicon core is respectively set to plane or outside rounding or internal rounding, and the plane of described two perpendicular C-shaped silicon core lower ends or outside rounding or internal rounding are connected one closed-loop path of formation with the positive and negative electrode of the graphite seat in body of heater or tungsten seat or molybdenum seat.
The bridging method of described C-shaped silicon core, is provided with at least one inserted sheet downwardly extended in the plane that the lower end of two perpendicular C-shaped silicon core is respectively provided with, and two inserted sheets are connected one closed-loop path of formation with the positive and negative electrode of the graphite seat in body of heater or tungsten seat or molybdenum seat.
Owing to adopting technique scheme, the present invention possesses following advantage:
Owing to have employed the bridging method of C-shaped silicon core of the present invention, overlapped silicon core is not only made to have relatively larger contact surface in lap-joint, and without drawing this step of drawing silicon core spherosome in current all technique, and significantly reduce use cost than prior art and reduce procedure of processing, ensure that the rising of yield rate, overcome the generation that the lodging phenomenon of silicon core in process of production is the least possible；The cylindrical structural of solid silicon core and square silicon core is far longer than due to the intensity of C-shaped silicon core of the present invention, after described C-shaped silicon core intensity increases, its resistant to lodging will far better than existing solid silicon core, and it is compared with solid silicon core, there is weight of substantially equal, but diameter is far longer than the beneficial features of solid silicon core, for the basic patent of original creation.
[accompanying drawing explanation]
Fig. 1 is the joinery and its construction clamping perspective view of the present invention；
Fig. 2 be the embodiment of the present invention by " L " shape joint grafting perspective view；
Fig. 3 is insert-connecting plate and the spliced eye grafting perspective view of the embodiment of the present invention；
Fig. 4 is another connected mode structural representation of the insert-connecting plate of the embodiment of the present invention and spliced eye grafting；
Fig. 5 is the perspective view being overlapped on otch by insert-connecting plate of the embodiment of the present invention；
Fig. 6 is the perpendicular silicone pipes lower end structure schematic diagram of the present invention；
Fig. 7 is the outside rounding structural representation in perpendicular silicone pipes lower end of the present invention；
Fig. 8 is the internal rounding structural representation in perpendicular silicone pipes lower end of the present invention；
The perpendicular silicone pipes lower end that Fig. 9 is the present invention arranges plate-inserting structure schematic diagram；
In the drawings: 1, horizontal C-shaped silicon core；2, inclined-plane is connected；3, reducing fourth of the twelve Earthly Branches groove；4, tenon block is widened；5, perpendicular C-shaped silicon core；6, " L " shape joint；7, insert-connecting plate；8, interface；9, otch；10, outside rounding；11, internal rounding；12, inserted sheet.
[detailed description of the invention]
With reference to example below, it is possible to being explained in more detail the present invention, the present invention is not limited to these embodiments.
In conjunction with the bridging method of the C-shaped silicon core provided in accompanying drawing 1～5, including horizontal C-shaped silicon core 1 and perpendicular C-shaped silicon core 5, the two ends of described horizontal C-shaped silicon core 1 are connected formation " ∏ " character form structure respectively through the upper end of mortice and tenon joint, grafting or clamping with two perpendicular C-shaped silicon core 5；Two ends in conjunction with C-shaped silicon core 1 horizontal described in accompanying drawing 1 are connected formation " ∏ " character form structure by mortice and tenon joint with the upper end of two perpendicular C-shaped silicon core 5, connection inclined-plane 2 it is respectively provided with in the bottom, two ends of horizontal C-shaped silicon core 1, described connection inclined-plane 2 is corresponding with the connection inclined-plane 2 being arranged on two perpendicular C-shaped silicon core 5 upper ends, connect in the two of horizontal C-shaped silicon core 1 and inclined-plane is respectively equipped with reducing fourth of the twelve Earthly Branches groove 3 or widens tenon block 4, the connection inclined-plane 2 of perpendicular C-shaped silicon core 5 upper end is respectively equipped with and widens tenon block 4 or reducing fourth of the twelve Earthly Branches groove 3, when namely two connection inclined-planes 2 of horizontal C-shaped silicon core 1 being set to reducing fourth of the twelve Earthly Branches groove 3, described two perpendicular connection inclined-planes, C-shaped silicon core 5 upper end 2 are just set to widen tenon block 4, " ∏ " character form structure is formed by the two ends clamping of perpendicular C-shaped silicon core 5 upper end Yu horizontal C-shaped silicon core 1.
Two ends in conjunction with C-shaped silicon core 1 horizontal described in accompanying drawing 2 are connected formation " ∏ " character form structure by grafting with the upper end of two perpendicular C-shaped silicon core 5, the described bottom, two ends being plugged to horizontal C-shaped silicon core 1 is respectively equipped with connection inclined-plane 2, the opposite side of two perpendicular C-shaped silicon core 5 upper ends is respectively equipped with connection inclined-plane 2, inserting one end of " L " shape joint 6 in the two ends C-shaped aperture of described horizontal C-shaped silicon core 1 respectively, the other end of two " L " shape joint 6 is respectively inserted in the upper end C shape of two perpendicular C-shaped silicon core 5 and forms " ∏ " character form structure.
Two ends in conjunction with C-shaped silicon core 1 horizontal described in accompanying drawing 3 are connected formation " ∏ " character form structure by clamping with the upper end of two perpendicular C-shaped silicon core 5, it is respectively arranged at two ends with insert-connecting plate 7 in horizontal C-shaped silicon core 1, the top of described two perpendicular C-shaped silicon core 5 is respectively equipped with interface 8, and interface 8 grafting on the insert-connecting plate 7 at horizontal C-shaped silicon core 1 two ends and two perpendicular C-shaped silicon core 5 tops forms " ∏ " character form structure.
It is respectively equipped with interface 8 on horizontal C-shaped silicon core 1 both sides in conjunction with accompanying drawing 4, the top of described two perpendicular C-shaped silicon core 5 is respectively equipped with insert-connecting plate 7, and the insert-connecting plate 7 of the setting on two perpendicular C-shaped silicon core 5 tops forms " ∏ " character form structure with interface 8 grafting on horizontal C-shaped silicon core 1 both sides.
It is connected the 3rd replacing structure of formation " ∏ " character form structure with the upper end of two perpendicular C-shaped silicon core 5 by clamping in conjunction with the two ends of C-shaped silicon core 1 horizontal described in accompanying drawing 5, it is respectively arranged at two ends with insert-connecting plate 7 in horizontal C-shaped silicon core 1, the top of described two perpendicular C-shaped silicon core 5 is respectively equipped with otch 9, the insert-connecting plate 7 that horizontal C-shaped silicon core 1 two ends are arranged is placed on two perpendicular C-shaped silicon core 5 upper ends, and horizontal C-shaped silicon core 1 two ends are connected formation " ∏ " character form structure with the vertical plane of otch 9.
Lower end in conjunction with the perpendicular C-shaped silicon core 5 of 6～9 liang of accompanying drawing is respectively set to plane or outside rounding 10 or internal rounding 11, and the plane of described two perpendicular C-shaped silicon core 5 lower ends or outside rounding 10 or internal rounding 11 are connected one closed-loop path of formation with the positive and negative electrode of the graphite seat in body of heater or tungsten seat or molybdenum seat；Being provided with at least one inserted sheet 12 downwardly extended in the plane that the lower end of two perpendicular C-shaped silicon core 5 is respectively provided with, two inserted sheets 12 are connected with the positive and negative electrode of the graphite seat in body of heater or tungsten seat or molybdenum seat just can form " ∏ " shape galvanic circle.
The present invention utilizes the two ends of horizontal C-shaped silicon core 1 and two perpendicular C-shaped silicon core 5 to overlap, to realize " ∏ " shape galvanic circle, plane or outside rounding 10 or internal rounding 11 it is respectively set in the lower end of two perpendicular C-shaped silicon core 5, the plane of described two perpendicular C-shaped silicon core 5 lower ends or outside rounding 10 or internal rounding 11 are connected one closed-loop path of formation with the positive and negative electrode of the graphite seat in body of heater or tungsten seat or molybdenum seat, wherein in the plane that two perpendicular C-shaped silicon core 5 lower ends are respectively provided with, it is provided with at least one inserted sheet 12 downwardly extended, two inserted sheets 12 are connected one closed-loop path of formation with the positive and negative electrode of the graphite seat in body of heater or tungsten seat or molybdenum seat.
It should be noted that, the present invention is by changing the solid overlapping mode of existing horizontal silicon core and perpendicular silicon core, horizontal C-shaped silicon core 1 and two perpendicular C-shaped silicon core 5 are utilized to overlap, the closed-loop path making horizontal C-shaped silicon core 1 and two perpendicular C-shaped silicon core 5 is guaranteed, it also avoid existing technique easily utilize high frequency coil draw occur injuring high frequency coil and the shut-down that causes, the present invention not only can ensure that the rising of yield rate in the later stage uses, and owing to growth area strengthens, the speed of growth have also been obtained and significantly promotes；The present invention ensures the conductivity in using and possesses good electric conductivity, and then can improve the quality of polysilicon in production of polysilicon.
The embodiment selected in this article for the open purpose of the present invention, it is suitable to be presently considered to be, however, it should be understood that, it is contemplated that include all changes belonging to embodiment in this design and invention scope and improvement.
Claims (3)
1. the bridging method of a C-shaped silicon core, including horizontal C-shaped silicon core (1) and perpendicular C-shaped silicon core (5), it is characterized in that: the two ends of described horizontal C-shaped silicon core (1) are connected formation " ∏ " character form structure respectively through the upper end of grafting with two perpendicular C-shaped silicon core (5), the described bottom, two ends being plugged to horizontal C-shaped silicon core (1) is respectively equipped with connection inclined-plane (2), the opposite side of two perpendicular C-shaped silicon core (5) upper ends is respectively equipped with connection inclined-plane (2), one end of " L " shape joint (6) is inserted respectively in the two ends C-shaped aperture of described horizontal C-shaped silicon core (1), the other end of two " L " shape joint (6) is respectively inserted in the upper end C-shaped aperture of two perpendicular C-shaped silicon core (5) and forms " ∏ " character form structure.
2. the bridging method of C-shaped silicon core according to claim 1, it is characterized in that: the lower end of two perpendicular C-shaped silicon core (5) is respectively set to plane or outside rounding (10) or internal rounding (11), the plane of described two perpendicular C-shaped silicon core (5) lower ends or outside rounding (10) or internal rounding (11) are connected one closed-loop path of formation with the positive and negative electrode of the graphite seat in body of heater or tungsten seat or molybdenum seat.
3. the bridging method of C-shaped silicon core according to claim 2, it is characterized in that: being provided with at least one inserted sheet downwardly extended (12) in the plane that the lower end of two perpendicular C-shaped silicon core (5) is respectively provided with, inserted sheet (12) is connected one closed-loop path of formation with the positive and negative electrode of the graphite seat in body of heater or tungsten seat or molybdenum seat.
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| CN104831343A (en) * | 2015-04-15 | 2015-08-12 | 南通大学 | Seed crystal splicing structure for ingot casting |
| CN104818521A (en) * | 2015-04-15 | 2015-08-05 | 南通大学 | Seed crystal splicing structure for like single crystal silicon cast ingot |
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