CN102344141B - Socket joint type silicon core lapping structure and method capable of increasing contact area and reducing electric resistance - Google Patents
Socket joint type silicon core lapping structure and method capable of increasing contact area and reducing electric resistance Download PDFInfo
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- CN102344141B CN102344141B CN 201110153461 CN201110153461A CN102344141B CN 102344141 B CN102344141 B CN 102344141B CN 201110153461 CN201110153461 CN 201110153461 CN 201110153461 A CN201110153461 A CN 201110153461A CN 102344141 B CN102344141 B CN 102344141B
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Abstract
The invention belongs to a silicon core lapping method in a polysilicon production process by a Siemens method, and particularly relates to a socket joint type silicon core lapping structure and method capable of increasing contact area and reducing electric resistance. Both sides of a horizontal silicon core (2) are respectively provided with a lapping surface (6) formed by a bifacial trough (5), or provided with an end U bayonet (7); and the upper ends of two vertical silicon cores (3) are respectively provided with a lapping surface (6) formed by a bifacial trough (5), or provided with an end U bayonet (7). The lapping method comprises the following steps: preprocessing the horizontal silicon core and vertical silicon cores; and after lapping the silicon cores, putting the silicon cores in a reducing furnace, and introducing hydrogen and trichlorosilane to carry out reducing reaction, so that required polysilicon forms the silicon core on the silicon core surface, thereby implementing multiple reduction processes of polysilicon. By using the invention, the lap joint of the silicon cores has large contact surface, and the step of drawing silicon core spherosome in all existing techniques is not needed, thereby ensuring the increase of yield.
Description
[technical field]
The invention belongs to the silicon core bridging method in the Siemens Method production polysilicon process, especially relate to a kind of plug-in type silicon core bridging arrangement and method that improves contact area and reduce resistance.
[background technology]
At present, produce at Siemens Method that silicon core overlapping technology is a very important technology in the process of polysilicon, it be mainly used in production of polysilicon a link, be the reduction reaction process.The principle of described reduction reaction process is: reduction reaction is to carry out in an airtight reduction furnace, is overlapped to form several loop lines with the silicon core in reduction furnace, " bridging " in the jargon just earlier before shove charge; Each loop line is made up of two perpendicular silicon cores and a horizontal silicon core; Two perpendicular silicon cores of each loop line are connected on respectively on two electrodes on the furnace bottom, electrode connects the positive and negative electrode of direct supply respectively, then the silicon core is heated, add and pine for one group of silicon core that overlaps and be equivalent to a big resistance, in airtight reduction furnace, feed hydrogen and trichlorosilane, carry out reduction reaction; Like this, required polysilicon will generate at the silicon wicking surface.The above is exactly silicon core and the application of overlapping technology in production of polysilicon thereof.
Chinese patent in first to file: disclose a kind of method for lapping orifice silicon core that can effectively improve contact area and reduce resistance, this patent has proposed a kind of bridging method of spheroidal silicon core, it is by at horizontal silicon core two ends silicon core spherosome being set respectively, and in the bottom of two silicon core spherosomes jack is set respectively, joined with the jack kiss by the inserting column of perpendicular silicon core upper end and to be connected, form the mode of connection that improves contact area and minimizing resistance; But, to find in actual applications when horizontal silicon core spherosome is holed, to tend to cause horizontal silicon core spherosome to crack, even rupture, yield rate is relatively low, makes tooling cost increase; And drawing spherosome at horizontal silicon core two ends also is comparatively complexity and the higher technological process of cost of a technology; this process is complex process not only; and when drawing horizontal silicon core spherosome, radio-frequency coil accidentally just can occur and contact the generation that causes spark phenomenon with the silicon core; even cause radio-frequency coil to scrap; and influence the carrying out of technology; pulling process must must be stopped; carry out next time pulling process by changing radio-frequency coil; during opening device again during this wherein stops work for prevent that fuel rod from oxidation taking place in pulling process; also the seed crystal that must more renew again also will vacuumize silicon core stove simultaneously again; pour protective gas; processing steps such as heating.
Reference:
Chinese patent; Patent name, can effectively improve contact area and reduce the method for lapping orifice silicon core of resistance, publication number, CN101570890A, open day, on November 4th, 2009.
[summary of the invention]
In order to overcome the deficiency in the background technology, the invention discloses a kind of plug-in type silicon core bridging arrangement and method that improves contact area and reduce resistance, the present invention not only makes the silicon core that overlaps in lap-joint bigger contact surface be arranged, and need not to draw this step of drawing silicon core spherosome in present all technologies, and guaranteed the rising of yield rate.
In order to realize the purpose of foregoing invention, the present invention adopts following technical scheme:
A kind of plug-in type silicon core bridging arrangement that improves contact area and reduce resistance comprises a horizontal silicon core and two perpendicular silicon cores, is respectively equipped with the faying surface of double surface grooving formation in horizontal silicon core both sides or is set to end " U " bayonet socket; The upper end of two perpendicular silicon cores is respectively equipped with the faying surface of double surface grooving formation or is set to end " U " bayonet socket; When described horizontal silicon core both sides are set to the faying surface of double surface grooving, when the upper end of described two perpendicular silicon cores just was set to end " U " bayonet socket or described horizontal silicon core two ends respectively and is set to end " U " bayonet socket, the top of described two perpendicular silicon cores just was set to the faying surface of double surface grooving respectively; The faying surface that end " U " bayonet socket of the faying surface that the double surface grooving of described horizontal silicon core both sides forms or end " U " bayonet socket and described two perpendicular silicon core upper ends or the double surface grooving on two perpendicular silicon core tops form coincide to overlap and forms the plug-in type silicon core bridging arrangement that improves contact area and reduce resistance; " U " bayonet socket of described horizontal silicon core or two perpendicular silicon core settings is opening outside the end.
Describedly improve contact area and reduce the plug-in type silicon core bridging arrangement of resistance, two sides are "=" shape structure or outer end enlarging in the mouth of " U " bayonet socket that horizontal silicon core or two perpendicular silicon cores arrange respectively.
Describedly improve contact area and reduce the plug-in type silicon core bridging arrangement of resistance, " U " bayonet socket inside bottom face that arranges respectively at horizontal silicon core or two perpendicular silicon cores is provided with the faying surface that the double surface grooving with horizontal silicon core or two perpendicular silicon cores forms and inserts the arc that side kiss is joined.
Describedly improve contact area and reduce the plug-in type silicon core bridging arrangement of resistance, the bottom coupling end of described two perpendicular silicon cores be set to respectively the back taper head or with the circle of perpendicular silicon core same diameter.
A kind of plug-in type silicon core bridging method that improves contact area and reduce resistance comprises following steps:
1), the processing in advance of horizontal silicon core, perpendicular silicon core:
A, at first with the horizontal silicon core two ends of design length respectively grinding go out end " U " bayonet socket or in the both sides of horizontal silicon core respectively grinding to go out the faying surface that double surface grooving forms stand-by;
B, respectively the perpendicular silicon core top that two design heights is identical both sides respectively grinding go out faying surface that double surface grooving forms or in the upper end of two perpendicular silicon cores respectively grinding to go out end " U " bayonet socket stand-by;
When wherein horizontal silicon core two ends were set to end " U " bayonet socket, the top of described perpendicular silicon core arranged the faying surface of the double surface grooving formation corresponding with end " U " bayonet socket;
Further, when horizontal silicon core both sides are set to the faying surface of double surface grooving formation, end " U " bayonet socket that the faying surface that the upper end of described perpendicular silicon core arranges and double surface grooving forms is corresponding;
2), silicon core overlap joint:
The faying surface that the double surface grooving that the horizontal silicon core of previous step both sides are arranged forms and end " U " the bayonet socket clampings that two perpendicular silicon core upper ends arrange respectively check that whether faying surface closely is connected with mouthful interior two side of end " U " bayonet socket, please guarantee not have the gap; Or the faying surface that the double surface grooving that arranges respectively of end " U " bayonet socket that arranges respectively of horizontal silicon core two ends and two perpendicular silicon core top forms pegs graft, and checks whether a two side closely is connected with faying surface in the mouth of end " U " bayonet socket, please guarantee not have the gap;
3), the bottom coupling end of two perpendicular silicon core lower ends of the described perpendicular silicon core that is connected firmly of previous step, horizontal silicon core linker is connected on respectively on two electrodes on the reduction furnace furnace bottom, the electrode anode UNICOM of arbitrary perpendicular silicon core bottom coupling end and direct supply wherein, the electrode negative pole UNICOM of another perpendicular silicon core bottom coupling end and direct supply, then the silicon core is heated, add and pine for one group of silicon core that overlaps and be equivalent to a big resistance, in airtight reduction furnace, feed hydrogen and trichlorosilane, carry out reduction reaction;
4), when required polysilicon generates the silicon core at the silicon wicking surface, take out the finished silicon core then and just finished once the described silicon core course of processing;
5), repeat previous step, realize repeatedly the reduction process of polysilicon.
Because adopt technique scheme, the present invention possesses following advantage:
Owing to adopted plug-in type silicon core bridging arrangement and the method that improves contact area and reduce resistance of the present invention, not only make the silicon core that overlaps in lap-joint bigger contact surface be arranged, and need not to draw this step of drawing silicon core spherosome in present all technologies, and significantly reduced use cost and cut down procedure of processing than prior art, guaranteed the rising of yield rate; The present invention closely is connected with the faying surface that the double surface grooving of horizontal silicon core or the setting of perpendicular silicon core forms by end " U " bayonet socket is set at horizontal silicon core or perpendicular silicon core, guarantee the electric conductivity in the use and possess conductivity preferably, and then can in production of polysilicon, improve the quality of polysilicon, the tight interconnection technique of faying surface that the present invention is formed by end " U " bayonet socket and double surface grooving, make firmness obtain effective raising, overcome the least possible generation of lodging phenomenon of silicon core in process of production.
[description of drawings]
Fig. 1 is perspective view of the present invention;
Fig. 2 is the horizontal silicon core faying surface structural representation of Fig. 1;
Fig. 3 is horizontal another example structure synoptic diagram of silicon core faying surface of Fig. 1;
Fig. 4 is perpendicular silicon core card, the arc structural representation of Fig. 1;
Fig. 5 is perpendicular silicon core card, another example structure synoptic diagram of arc of Fig. 1;
Fig. 6 is the another embodiment of the present invention structural representation;
Fig. 7 is the perpendicular silicon core faying surface structural representation of Fig. 6;
Fig. 8 is the perpendicular silicon core faying surface perspective view of Fig. 6;
Fig. 9 is horizontal silicon core card, the arc structural representation of Fig. 6;
Figure 10 is perpendicular silicon core bottom another example structure synoptic diagram of coupling end of Fig. 6;
Figure 11 is horizontal silicon core card, another example structure synoptic diagram of arc of Fig. 9;
Figure 12 is horizontal silicon core card, arc the 3rd example structure synoptic diagram of Fig. 9;
Figure 13 is the horizontal silicon core faying surface structural representation of Fig. 6;
Figure 14 is horizontal another example structure synoptic diagram of silicon core faying surface of Fig. 6;
In the drawings: 1, card; 2, horizontal silicon core; 3, perpendicular silicon core; 4, bottom coupling end; 5, fluting; 6, faying surface; 7, end " U " bayonet socket; 8, arc.
[embodiment]
With reference to following embodiment, can be explained in more detail the present invention, the present invention is not limited to these embodiment.
1～14 describedly improves contact area and reduces the plug-in type silicon core bridging arrangement of resistance by reference to the accompanying drawings, comprise a horizontal silicon core 2 and two perpendicular silicon cores 3, be respectively equipped with the faying surface 6 of double surface grooving 5 formation in horizontal silicon core 2 both sides or be set to end " U " bayonet socket 7; The upper end of two perpendicular silicon cores 3 is respectively equipped with the faying surface 6 of double surface grooving 5 formation or is set to end " U " bayonet socket 7; When described horizontal silicon core 2 both sides are set to the faying surface 6 of double surface grooving 5, when the upper end of described two perpendicular silicon cores 3 just was set to end " U " bayonet socket 7 or described horizontal silicon core 2 two ends respectively and is set to end " U " bayonet socket 7, the top of described two perpendicular silicon cores 3 just was set to the faying surface 6 of double surface grooving 5 respectively; The faying surface 6 that the double surface grooving 5 on the faying surface 6 that the double surface grooving 5 of described horizontal silicon core 2 both sides forms or end " U " bayonet socket 7 of end " U " bayonet socket 7 and described two perpendicular silicon core 3 upper ends or two perpendicular silicon core 3 tops forms coincide to overlap to form and improves contact area and the plug-in type silicon core bridging arrangement that reduces resistance; " U " bayonet socket 7 of described horizontal silicon core 2 or two perpendicular silicon core 3 settings is opening outside the end.
4 and 5 structures that provide by reference to the accompanying drawings, two sides are "=" shape parallel construction of accompanying drawing 4 or are the outer end enlarging structure of accompanying drawing 5 in horizontal silicon core 2 or two perpendicular silicon cores 3 are set to the mouth of " U " bayonet socket 7 respectively.
Describedly improve contact area and reduce the plug-in type silicon core bridging arrangement of resistance, " U " bayonet socket 7 inside bottom faces that arrange respectively at horizontal silicon core 2 or two perpendicular silicon cores 3 are provided with faying surface 6 that the double surface grooving 5 with horizontal silicon core 2 or two perpendicular silicon cores 3 forms and insert a side and kiss the arc 8 of joining.
Describedly improve contact area and reduce the plug-in type silicon core bridging arrangement of resistance, the bottom coupling end 4 of described two perpendicular silicon cores 3 be set to respectively the back taper head or with the circle of perpendicular silicon core 3 same diameter.
A kind of plug-in type silicon core bridging method that improves contact area and reduce resistance comprises following steps:
1), the processing in advance of horizontal silicon core 2, perpendicular silicon core 3:
A, at first with horizontal silicon core 2 two ends of design length respectively grinding go out end " U " bayonet socket 7 or in the both sides of horizontal silicon core 2 respectively grinding to go out the faying surface 6 that double surface grooving 5 forms stand-by;
B, respectively perpendicular silicon core 3 tops that two design heights is identical both sides respectively grinding go out faying surface 6 that double surface grooving 5 forms or in the upper end of two perpendicular silicon cores 3 respectively grinding to go out end " U " bayonet socket 7 stand-by;
When wherein horizontal silicon core 2 two ends were set to end " U " bayonet socket 7, the top of described perpendicular silicon core 3 arranged the faying surface 6 of double surface grooving 5 formation corresponding with end " U " bayonet socket 7;
Further, when horizontal silicon core 2 both sides were set to faying surface 6 that double surface grooving 5 forms, the upper end of described perpendicular silicon core 3 arranged end " U " bayonet socket 7 corresponding with the faying surface 6 of double surface grooving 5 formation;
2), silicon core overlap joint:
3), the bottom coupling end 4 of two perpendicular silicon core 3 lower ends of the described perpendicular silicon core 3 that is connected firmly of previous step, horizontal silicon core 2 linkers is connected on respectively on two electrodes on the reduction furnace furnace bottom, the electrode anode UNICOM of arbitrary perpendicular silicon core 3 bottom coupling ends 4 and direct supply wherein, the electrode negative pole UNICOM of another perpendicular silicon core 3 bottom coupling ends 4 and direct supply, then the silicon core is heated, add and pine for one group of silicon core that overlaps and be equivalent to a big resistance, in airtight reduction furnace, feed hydrogen and trichlorosilane, carry out reduction reaction;
4), when required polysilicon generates the silicon core at the silicon wicking surface, take out the finished silicon core then and just finished once the described silicon core course of processing;
5), repeat previous step, realize repeatedly the reduction process of polysilicon.
Need to prove, the present invention is by changing the overlapping mode of horizontal silicon core 2 and perpendicular silicon core 3, make that horizontal silicon core 2 and the loop line of perpendicular silicon core 3 are guaranteed, and the present invention has omitted this step of drawing silicon core spherosome, this has been equivalent to save current consumption and process time cost in drawing, the shut-down of also having avoided injuring radio-frequency coil and having caused also can be guaranteed the rising of yield rate in the later stage use; The present invention closely is connected with the faying surface 6 that double surface grooving 5 that horizontal silicon core 2 or perpendicular silicon core 3 arrange forms by end " U " bayonet socket 7 is set at horizontal silicon core 2 or perpendicular silicon core 3, guarantee the electric conductivity in the use and possess conductivity preferably, and then can in production of polysilicon, improve the quality of polysilicon.
The embodiment that selects for use in this article in order to disclose purpose of the present invention currently thinks to suit, and still, will be appreciated that the present invention is intended to comprise that all belong to all changes and the improvement of the embodiment in this design and the invention scope.
Claims (5)
1. one kind can be improved contact area and the plug-in type silicon core bridging arrangement that reduces resistance, comprise a horizontal silicon core (2) and two perpendicular silicon cores (3), it is characterized in that: be respectively equipped with the faying surface (6) of double surface grooving (5) formation in horizontal silicon core (2) both sides or be set to end " U " bayonet socket (7); The upper end of two perpendicular silicon cores (3) is respectively equipped with the faying surface (6) of double surface grooving (5) formation or is set to end " U " bayonet socket (7); When described horizontal silicon core (2) both sides are set to the faying surface (6) of double surface grooving (5), when the upper end of described two perpendicular silicon cores (3) just was set to end " U " bayonet socket (7) or described horizontal silicon core (2) two ends respectively and is set to end " U " bayonet socket (7), the top of described two perpendicular silicon cores (3) just was set to the faying surface (6) of double surface grooving (5) respectively; The faying surface (6) that end " U " bayonet socket (7) of the faying surface (6) that the double surface grooving (5) of described horizontal silicon core (2) both sides forms or end " U " bayonet socket (7) and described two perpendicular silicon cores (3) upper end or the double surface grooving (5) on two perpendicular silicon cores (3) top form coincide and overlaps the plug-in type silicon core bridging arrangement that forms the raising contact area and reduce resistance; " U " bayonet socket (7) that described horizontal silicon core (2) or two perpendicular silicon cores (3) arrange is opening outside the end.
2. according to claim 1ly improve contact area and reduce the plug-in type silicon core bridging arrangement of resistance, it is characterized in that: two sides are "=" shape structure or outer end enlarging in the mouth of " U " bayonet socket (7) that horizontal silicon core (2) or two perpendicular silicon cores (3) arrange respectively.
3. according to claim 1ly improve contact area and reduce the plug-in type silicon core bridging arrangement of resistance, it is characterized in that: " U " bayonet socket (7) the inside bottom face that arranges respectively at horizontal silicon core (2) or two perpendicular silicon cores (3) is provided with faying surface (6) that the double surface grooving (5) with horizontal silicon core (2) or two perpendicular silicon cores (3) forms and inserts a side and kiss the arc (8) of joining.
4. according to claim 1ly improve contact area and reduce the plug-in type silicon core bridging arrangement of resistance, it is characterized in that: the bottom coupling end (4) of described two perpendicular silicon cores (3) be set to respectively the back taper head or with the circle of perpendicular silicon core (3) same diameter.
5. implement described the improved contact area and the plug-in type silicon core bridging method that reduces resistance that improves contact area and reduce the plug-in type silicon core bridging arrangement of resistance of the arbitrary claim of claim 1～4, it is characterized in that: comprise following steps:
1), the processing in advance of horizontal silicon core, perpendicular silicon core:
A, at first with horizontal silicon core (2) two ends of design length respectively grinding go out end " U " bayonet socket (7) or in the both sides of horizontal silicon core (2) respectively grinding to go out the faying surface (6) that double surface grooving (5) forms stand-by;
B, respectively perpendicular silicon core (3) top that two design heights is identical both sides respectively grinding go out faying surface (6) that double surface grooving (5) forms or in the upper end of two perpendicular silicon cores (3) respectively grinding to go out end " U " bayonet socket (7) stand-by;
When wherein horizontal silicon core (2) two ends were set to end " U " bayonet socket (7), the top of described perpendicular silicon core (3) arranged the faying surface (6) that the double surface grooving (5) corresponding with end " U " bayonet socket (7) forms;
Further, when horizontal silicon core (2) both sides are set to the faying surface (6) of double surface grooving (5) formation, end " U " bayonet socket (7) that the faying surface (6) that the upper end of described perpendicular silicon core (3) arranges and double surface grooving (5) forms is corresponding;
2), silicon core overlap joint:
The faying surface (6) that the double surface grooving (5) that the horizontal silicon core of previous step (2) both sides are arranged forms and end " U " bayonet socket (7) clamping of setting respectively of two perpendicular silicon cores (3) upper end, check that whether faying surface (6) closely is connected with the interior two side of the mouth of end " U " bayonet socket (7), please guarantee not have the gap; Or the faying surface (6) that the double surface grooving (5) that arranges respectively of end " U " bayonet socket (7) that arranges respectively of horizontal silicon core (2) two ends and two perpendicular silicon cores (3) top forms is pegged graft, whether the interior two side of mouth that checks end " U " bayonet socket (7) closely is connected with faying surface (6), please guarantee not have the gap;
3), the bottom coupling end (4) of two perpendicular silicon cores (3) lower end of the described perpendicular silicon core (3) that is connected firmly of previous step, horizontal silicon core (2) linker is connected on respectively on two electrodes on the reduction furnace furnace bottom, the electrode anode UNICOM of arbitrary perpendicular silicon core (3) bottom coupling end (4) and direct supply wherein, the electrode negative pole UNICOM of another perpendicular silicon core (3) bottom coupling end (4) and direct supply, then the silicon core is heated, add and pine for one group of silicon core that overlaps and be equivalent to a big resistance, in airtight reduction furnace, feed hydrogen and trichlorosilane, carry out reduction reaction;
4), when required polysilicon generates the silicon core at the silicon wicking surface, take out the finished silicon core then and just finished once the described silicon core course of processing;
5), repeat previous step, realize repeatedly the reduction process of polysilicon.
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| CN104264220A (en) * | 2014-07-02 | 2015-01-07 | 洛阳金诺机械工程有限公司 | Direct silicon core drawing method using product material |
| CN114751413A (en) * | 2022-05-27 | 2022-07-15 | 洛阳市自动化研究所有限公司 | Silicon core lapping structure and lapping method thereof |
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| JP5308288B2 (en) * | 2009-09-14 | 2013-10-09 | 信越化学工業株式会社 | Reactor for producing polycrystalline silicon, polycrystalline silicon production system, and method for producing polycrystalline silicon |
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