CN101570890B - Method for lapping orifice silicon core capable of effectively improving contact area and reducing resistance - Google Patents
Method for lapping orifice silicon core capable of effectively improving contact area and reducing resistance Download PDFInfo
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- CN101570890B CN101570890B CN2009100640115A CN200910064011A CN101570890B CN 101570890 B CN101570890 B CN 101570890B CN 2009100640115 A CN2009100640115 A CN 2009100640115A CN 200910064011 A CN200910064011 A CN 200910064011A CN 101570890 B CN101570890 B CN 101570890B
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Abstract
The invention provides a method for lapping an orifice silicon core capable of effectively improving the contact area and reducing resistance, and belongs to a method for lapping the silicon core in aprocess for producing polysilicon by Siemens method. The method comprises the following steps: a horizontal silicon core (2) with required length and silicon core spheres (1) on two ends is drawn; ja cks or slots (6) are drilled on the silicon core spheres (1) on two ends of the horizontal silicon core (2); and shapes matched with the jacks or the slots (6) drilled on the silicon core sphere (1) are polished on the upper end of a vertical silicon core (3) jacks or slots (6) on silicon core spheres (1) which is on the two ends of horizontal silicon core (2) is inserted on the upper end of the vertical silicon core. The method ensures that the lapped silicon cores have larger contact surface on the lapping position, so that the silicon core has better conductive performance, thereby improving the quality of the polysilicon in polysilicon production. Furthermore, the firmness of the silicon core can be greatly improved by adopting orifice lapping technology, and silicon core lodging in the production process can be avoided.
Description
Technical field:
The invention belongs to the silicon core bridging method in the Siemens Method production polysilicon process, especially relate to a kind of method for lapping orifice silicon core that can effectively improve contact area and reduce resistance.
Background technology:
At present, produce at Siemens Method that silicon core overlapping technology is a very important technology in the process of polysilicon, it be mainly used in production of polysilicon a link, be the reduction reaction process.The principle of described reduction reaction process is: reduction reaction is to carry out in an airtight reduction furnace, is overlapped to form several loop lines with the silicon core in reduction furnace, " bridging " in the jargon just earlier before shove charge; Each loop line all is made up of two perpendicular silicon cores (3) and a horizontal silicon core (2); In the prior art shown in Fig. 1,2 or 3, two perpendicular silicon cores (3) of each loop line are connected on respectively on two electrodes on the furnace bottom, electrode connects the positive and negative electrode of direct supply respectively, then the silicon core is heated, add and pine for one group of silicon core that overlaps and be equivalent to a big resistance, in airtight reduction furnace, feed hydrogen and trichlorosilane, carry out reduction reaction; Like this, required polysilicon will generate at the silicon wicking surface.The above is exactly silicon core and the application of overlapping technology in production of polysilicon thereof.But traditional silicon core overlapping technology is respectively as shown in Figure 2 " V " shape mouth overlap joint of " U " shape mouth overlap joint or Fig. 3.More than the common feature of two kinds of methods be: each loop line all is to be formed by two perpendicular silicon cores (3) and a horizontal silicon core (2) overlap joint, and there are a thicker ball or oval globular silicon core spherosome (1) in the upper end of every perpendicular silicon core (3).Different is to open " V " shape groove (5) on the ball of perpendicular silicon core or open " U " shape groove (4) on the ball of perpendicular silicon core for two kinds of technology.
Find that by test all there are following two kinds of defectives in above two kinds of overlapping technologies:
The first, lap-joint's contact surface is too little, and it is bigger accordingly to cause lap-joint to contact bad resistance, and the polysilicon that herein obtains when reduction reaction is second-rate, just " material turns round " of jargon call;
The second, can locate by U-shaped or V-shaped groove at fore-and-aft direction, but can't locate at left and right directions, like this, in reduction process, cause the lodging of silicon core easily.
Summary of the invention:
Deficiency at above-mentioned two kinds of methods, the invention discloses a kind of method for lapping orifice silicon core that can effectively improve contact area and reduce resistance, described method can effectively overcome the deficiency of above two kinds of silicon core overlapping technologies, repeatedly test discovery by horizontal silicon core and silicon core spherosome are designed to one through me, leave jack or slot at the silicon core spherosome of horizontal silicon core both sides then, perpendicular silicon core upper end is inserted in the jack or slot of silicon core spherosome, make two perpendicular silicon cores by with tight connection of silicon core spherosome, form one, the effect that can realize improving contact area and reduce resistance, and fixation makes the silicon core be difficult for lodging.
In order to realize the purpose of foregoing invention, the present invention adopts following technical scheme:
A kind of method for lapping orifice silicon core that can effectively improve contact area and reduce resistance, concrete steps of the present invention are;
1), at first draws out the horizontal silicon core of the two ends band silicon core spherosome of desired length;
2), on the silicon core spherosome at described horizontal silicon core two ends, get out jack or slot;
3), described perpendicular silicon core upper end is ground out with silicon core spherosome on the shape that is complementary of the jack that gets out or slot;
4), jack or slot on the silicon core spherosome of horizontal silicon core two ends are inserted in described perpendicular silicon core upper end, and whether firmly confirm, confirming that jack on perpendicular silicon core upper end and the horizontal silicon core two ends silicon core spherosome or the slot back that is connected firmly is stand-by;
5), two perpendicular silicon cores of the described perpendicular silicon core that is connected firmly, horizontal silicon core linker are connected on respectively on two electrodes on the furnace bottom, electrode connects the positive and negative electrode of direct supply respectively, then the silicon core is heated, add and pine for one group of silicon core that overlaps and be equivalent to a big resistance, in airtight reduction furnace, feed hydrogen and trichlorosilane, carry out reduction reaction;
6), when required polysilicon generates the silicon core at the silicon wicking surface, take out the finished silicon core then and just finished once the described silicon core course of processing;
7), to repeat previous step rapid, realizes repeatedly the reduction process of polysilicon.
The described method for lapping orifice silicon core that can effectively improve contact area and reduce resistance, the silicon core spherosome and the horizontal silicon core at horizontal silicon core two ends can be set to one.
Describedly can effectively improve contact area and reduce the method for lapping orifice silicon core of resistance, on the jack of silicon core spherosome setting or slot and perpendicular silicon core for closely cooperating.
Because adopt above technical scheme, the utility model possesses following advantage:
Owing to adopted the method for lapping orifice silicon core that can effectively improve contact area and reduce resistance of the present invention, make the silicon core that overlaps bigger contact surface be arranged in lap-joint, so just make it have conductivity preferably, and then can in production of polysilicon, improve the quality of polysilicon.Adopt the cellular type overlapping technology can improve its firmness greatly besides, can avoid silicon core lodging in process of production.
Description of drawings:
Fig. 1 is the form in the traditional silicon core overlapping technology.
Fig. 2 is the A-A view of Fig. 1.
Fig. 3 is " V " shape groove in the traditional silicon core overlapping technology.
Fig. 4 is the integrative-structure synoptic diagram of two silicon core spherosomes of the present invention and horizontal silicon core.
Fig. 5 is a user mode synoptic diagram of the present invention.
Fig. 6 is a perpendicular silicon core of the present invention upper end truncated cone insert structure synoptic diagram.
Fig. 7 is that sharp formula insert structure synoptic diagram is with in perpendicular silicon core of the present invention upper end.
Fig. 8 is a perpendicular silicon core of the present invention upper end column type insert structure synoptic diagram.
Fig. 9 is that perpendicular silicon core of the present invention upper end dwindles column type insert structure synoptic diagram.
Figure 10 is that perpendicular silicon core of the present invention upper end dwindles cylindrical band round end insert structure synoptic diagram.
Figure 11 is perpendicular silicon core of the present invention upper end truncated cone half an insert structure synoptic diagram.
Figure 12 is that sharp formula half insert structure synoptic diagram is with in perpendicular silicon core of the present invention upper end.
Figure 13 is perpendicular silicon core of the present invention upper end band frustum of a cone band circular arc half an insert structure synoptic diagram.
In the drawings: 1, silicon core spherosome; 2, horizontal silicon core; 3, perpendicular silicon core; 4, " U " shape groove; 5, " V " shape groove; 6, jack or slot.
Embodiment:
With reference to following embodiment, can be explained in more detail the utility model, the utility model is not limited to these embodiment.
In Fig. 4,5; A kind of method for lapping orifice silicon core that can effectively improve contact area and reduce resistance, concrete steps of the present invention are;
1), at first draws out the horizontal silicon core 2 of the two ends band silicon core spherosome 1 of desired length;
2), on the silicon core spherosome 1 at described horizontal silicon core 2 two ends, get out jack or slot 6;
3), described perpendicular silicon core 3 upper ends are ground out with silicon core spherosome 1 on the shape that is complementary of the jack that gets out or slot 6;
4), jack or slot 6 on the horizontal silicon core 2 two ends silicon core spherosomes 1 are inserted in described perpendicular silicon core 3 upper ends, and whether firmly confirm, confirming that perpendicular silicon core 3 upper ends and jack or slot 6 on the horizontal silicon core 2 two ends silicon core spherosomes 1 are connected firmly afterwards stand-by;
5), two perpendicular silicon cores of the described perpendicular silicon core 3 that is connected firmly, horizontal silicon core 2 linkers are connected on respectively on two electrodes on the furnace bottom, electrode connects the positive and negative electrode of direct supply respectively, then the silicon core is heated, add and pine for one group of silicon core that overlaps and be equivalent to a big resistance, in airtight reduction furnace, feed hydrogen and trichlorosilane, carry out reduction reaction;
6), when required polysilicon generates the silicon core at the silicon wicking surface, take out the finished silicon core then and just finished once the described silicon core course of processing;
7), to repeat previous step rapid, realizes repeatedly the reduction process of polysilicon.
The described method for lapping orifice silicon core that can effectively improve contact area and reduce resistance, the silicon core spherosome 1 and the horizontal silicon core 2 at horizontal silicon core 2 two ends can be set to one; Jack that is provided with at silicon core spherosome 1 or slot 6 and perpendicular silicon core 3 upper ends are for closely cooperating.
In Fig. 6; Get out the invaginating truncated cone on the silicon core spherosome at horizontal silicon core of the present invention two ends, perpendicular silicon core upper end is set to truncated cone, and the invaginating truncated cone that gets out on the silicon core spherosome of horizontal silicon core two ends is inserted in described perpendicular silicon core upper end, finishes grafting.
In Fig. 7; Get out invaginating point hole on the silicon core spherosome at horizontal silicon core of the present invention two ends, perpendicular silicon core upper end is set to pointed, and the invaginating point hole that gets out on the silicon core spherosome of horizontal silicon core two ends is inserted in described perpendicular silicon core upper end, finishes grafting.
In Fig. 8; Get out the invaginating circular hole on the silicon core spherosome at horizontal silicon core of the present invention two ends, perpendicular silicon core upper end is set to column type, and the invaginating circular hole that gets out on the silicon core spherosome of horizontal silicon core two ends is inserted in described perpendicular silicon core upper end, finishes grafting.
In Fig. 9; Get out the invaginating small sircle hole on the silicon core spherosome at horizontal silicon core of the present invention two ends, perpendicular silicon core upper end is set to dwindle cylinder, and the invaginating small sircle hole that gets out on the silicon core spherosome of horizontal silicon core two ends is inserted in described perpendicular silicon core upper end, finishes grafting.
In Figure 10; Get out to cave on the silicon core spherosome at horizontal silicon core of the present invention two ends and dwindle cylindrical band globular model hole, perpendicular silicon core upper end is set to dwindle the cylindrical band round end, the invaginating that gets out on the silicon core spherosome of horizontal silicon core two ends is inserted in described perpendicular silicon core upper end dwindle cylindrical band globular model hole, finish grafting.
In Figure 11; Get out invaginating truncated cone half hole on the silicon core spherosome at horizontal silicon core of the present invention two ends, perpendicular silicon core upper end is set to truncated cone, the invaginating truncated cone that gets out on the silicon core spherosome of horizontal silicon core two ends is inserted in described perpendicular silicon core upper end partly insert driving fit, finish grafting.
In Figure 12; Get out invaginating band point half hole on the silicon core spherosome at horizontal silicon core of the present invention two ends, perpendicular silicon core upper end is set to pointed, and invaginating band point half hole that gets out on the silicon core spherosome of horizontal silicon core two ends is inserted in described perpendicular silicon core upper end, finishes grafting.
In Figure 13; Get out invaginating frustum of a cone band circular hole on the silicon core spherosome at horizontal silicon core of the present invention two ends, it is circular-arc that perpendicular silicon core upper end is set to frustum of a cone band, the invaginating frustum of a cone band circular hole that gets out on the silicon core spherosome of horizontal silicon core two ends is inserted in described perpendicular silicon core upper end, finish grafting.
In sum, the objective of the invention is in order to get out jack on the silicon core spherosome 1 that no matter horizontal silicon core 2 two ends are described or slot 6 is Any shape, the shape that grind out perpendicular silicon core 3 upper ends all with silicon core spherosome 1 on the jack or the slot 6 that get out be complementary; Can form silicon core of the present invention loop line.
The embodiment that selects for use in this article in order to disclose purpose of the present invention currently thinks to suit, and still, will be appreciated that, so the present invention is intended to comprise that all belong to the changes and improvements of the embodiment in this design and the invention scope.
Claims (3)
1. one kind can effectively be improved contact area and the method for lapping orifice silicon core that reduces resistance, and it is characterized in that: concrete steps are;
1), at first draws out the horizontal silicon core (2) of the two ends band silicon core spherosomes (1) of desired length;
2), on the silicon core spherosome (1) at described horizontal silicon core (2) two ends, get out jack or slot (6);
3), will erect silicon core (3) upper end grind out with silicon core spherosome (1) on the shape that is complementary of the jack that gets out or slot (6);
4), with jack or slot (6) on described perpendicular silicon core (3) upper end insertion horizontal silicon core (2) the two ends silicon core spherosomes (1), and whether firmly confirm, confirming that jack on perpendicular silicon core (3) upper end and horizontal silicon core (2) the two ends silicon core spherosomes (1) or slot (6) back that is connected firmly is stand-by;
5), two perpendicular silicon cores of the described perpendicular silicon core (3) that is connected firmly, horizontal silicon core (2) linker are connected on respectively on two electrodes on the furnace bottom, electrode connects the positive and negative electrode of direct supply respectively, then the silicon core is heated, add and pine for one group of silicon core that overlaps and be equivalent to a big resistance, in airtight reduction furnace, feed hydrogen and trichlorosilane, carry out reduction reaction;
6), after the silicon wicking surface generates required polysilicon, take out the finished silicon core and just finish the silicon core course of processing one time;
7), to repeat previous step rapid, realizes repeatedly the reduction process of polysilicon.
2. the method for lapping orifice silicon core that can effectively improve contact area and reduce resistance as claimed in claim 1 is characterized in that: the silicon core spherosome (1) at horizontal silicon core (2) two ends is set to one with horizontal silicon core (2).
3. as claimed in claim 1ly can effectively improve contact area and reduce the method for lapping orifice silicon core of resistance, it is characterized in that: jack that is provided with at silicon core spherosome (1) or slot (6) and perpendicular silicon core (3) upper end are for closely cooperating.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009100640115A CN101570890B (en) | 2009-01-06 | 2009-01-06 | Method for lapping orifice silicon core capable of effectively improving contact area and reducing resistance |
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| CN2009100640115A CN101570890B (en) | 2009-01-06 | 2009-01-06 | Method for lapping orifice silicon core capable of effectively improving contact area and reducing resistance |
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| CN101570890A CN101570890A (en) | 2009-11-04 |
| CN101570890B true CN101570890B (en) | 2011-09-28 |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5415914B2 (en) * | 2009-11-26 | 2014-02-12 | 信越化学工業株式会社 | Carbon electrode and polycrystalline silicon rod manufacturing equipment |
| CN101979721A (en) * | 2010-09-19 | 2011-02-23 | 山东伟基炭科技有限公司 | Silicon core rods and silicon core structure for growth of polycrystalline silicon |
| CN103158200B (en) * | 2011-12-09 | 2016-07-06 | 洛阳金诺机械工程有限公司 | A kind of bridging method of C-shaped silicon core |
| CN103158201B (en) * | 2011-12-09 | 2016-03-02 | 洛阳金诺机械工程有限公司 | The bridging method of a kind of hollow silicon core and solid silicon core |
| CN103158202B (en) * | 2011-12-09 | 2016-07-06 | 洛阳金诺机械工程有限公司 | A kind of bridging method of hollow silicon core |
| CN104264220A (en) * | 2014-07-02 | 2015-01-07 | 洛阳金诺机械工程有限公司 | Direct silicon core drawing method using product material |
| CN112429736A (en) * | 2020-12-01 | 2021-03-02 | 新疆大全新能源股份有限公司 | Silicon core butt joint method for reduction furnace |
| CN114751413A (en) * | 2022-05-27 | 2022-07-15 | 洛阳市自动化研究所有限公司 | Silicon core lapping structure and lapping method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5327454A (en) * | 1989-11-04 | 1994-07-05 | Komatsu Electronic Metlas Co., Inc. | Bridge for connecting cores in a manufacturing equipment of polycrystal silicon |
| US6639192B2 (en) * | 2001-01-11 | 2003-10-28 | Wacker-Chemie Gmbh | Deposition device for depositing semiconductor material on a heated substrate |
| CN101319363A (en) * | 2008-07-04 | 2008-12-10 | 上海通用硅晶体材料有限公司 | Method for preparing polysilicon |
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2009
- 2009-01-06 CN CN2009100640115A patent/CN101570890B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5327454A (en) * | 1989-11-04 | 1994-07-05 | Komatsu Electronic Metlas Co., Inc. | Bridge for connecting cores in a manufacturing equipment of polycrystal silicon |
| US6639192B2 (en) * | 2001-01-11 | 2003-10-28 | Wacker-Chemie Gmbh | Deposition device for depositing semiconductor material on a heated substrate |
| CN101319363A (en) * | 2008-07-04 | 2008-12-10 | 上海通用硅晶体材料有限公司 | Method for preparing polysilicon |
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Owner name: LUOYANG JINNUO MACHINERY ENGINEERING CO., LTD. Free format text: FORMER OWNER: LIU ZHAOXUAN Effective date: 20111116 |
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Effective date of registration: 20111116 Address after: 471009 Jin Xin of Henan Province, Luoyang national hi tech Industrial Development Zone, Road No. 2 Luoyang Jinnuo Machinery Engineering Co Ltd Patentee after: Luoyang Jinnuo Mechanical Engineering Co., Ltd. Address before: 471000 Henan province Luoyang Xigong Road No. 1, No. 24 Jiashuyuan monocrystalline silicon factory building 1 unit 101 room Patentee before: Liu Chaoxuan |