CN103160916A - Drawing die plate for specially-shaped silicon core - Google Patents
Drawing die plate for specially-shaped silicon core Download PDFInfo
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- CN103160916A CN103160916A CN2011104082577A CN201110408257A CN103160916A CN 103160916 A CN103160916 A CN 103160916A CN 2011104082577 A CN2011104082577 A CN 2011104082577A CN 201110408257 A CN201110408257 A CN 201110408257A CN 103160916 A CN103160916 A CN 103160916A
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- silicon core
- groove
- shaped
- shaped silicon
- template
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
Abstract
The invention discloses a drawing die plate for a specially-shaped silicon core, and relates to a die plate. The drawing die plate for a specially-shaped silicon core comprises a die plate (2) and a drawing groove, wherein the drawing groove is formed in the die plate, the drawing groove is any one of an I-shaped groove (1), a cross-shaped groove (4), a double-cross-shaped groove (6), a six-Chinese-character-shaped groove (8), an S-shaped groove (10) or a Z-shaped groove (12), and a crystal solution passage penetrating to the bottom of the die plate is formed in the bottom of the drawing groove (1); and the drawing die plate for a specially-shaped silicon core disclosed by the invention is used for realizing drawing for the specially-shaped silicon core by forming the specially-shaped drawing groove in the die plate, enabling the melted crystal solution to enter in the drawing groove, drawing out any one specially-shaped silicon core of an I-shaped silicon core, a cross-shaped silicon core, a double-cross-shaped silicon core, a six-Chinese-character-shaped silicon core, an S-shaped silicon core or a Z-shaped silicon core, and then pulling out the silicon core with the same shape via seed crystal with the same shape. The drawing die plate for the specially-shaped silicon core disclosed by the invention is wonderful in conception, simple in structure, and low in use cost; and the later-stage use effect of the specially-shaped silicon core is superior to the later-stage use effect of the existing cylindrical solid silicon core. The drawing die plate for the specially-shaped silicon core has certain market and application prospects.
Description
[technical field]
The present invention relates to a kind of template, specifically the present invention relates to a kind of drawing template of shaped silicon core.
[background technology]
at present, usage quantity is very huge at home for the silicon core, existing silicon core is to distinguish molten mode to produce, use radio-frequency coil in its technological process, young brilliant chuck is completed pulling process, its principle of work is as follows: during work by passing into high-frequency current to radio-frequency coil, high-frequency induction heating, make the radio-frequency coil generation current produce magnetic line of force to fuel rod, fuel rod upper end after heating forms melt zone, then with the brilliant melting area of inserting of son, slowly promote young brilliant, raw material after fusing will be followed young brilliant the rising, form a new pillar-shaped crystal, this new pillar-shaped crystal is the finished product of silicon core or other material crystals.
Then the pillar-shaped crystal of the finished product of aforementioned silicon core or other material crystals is carried out reduction reaction in reduction furnace, described reduction reaction is to carry out in an airtight reduction furnace, first be overlapped to form several loop lines with the silicon core in reduction furnace, namely " bridging " in jargon before shove charge; Each loop line forms " ∏ " character form structure by two perpendicular silicon cores and a horizontal silicon core; Two perpendicular silicon cores of each loop line are connected on respectively on two electrodes on furnace bottom, two electrodes connect respectively the positive and negative electrode of direct supply, then the silicon core is heated, add and hanker one group of silicon core that overlaps and be equivalent to a large resistance, then pass into hydrogen and trichlorosilane in airtight reduction furnace, begin to carry out reduction reaction; Like this, required polysilicon will generate at the silicon wicking surface and form polycrystalline silicon rod, and described polycrystalline silicon rod need to become silicon single crystal through broken, the drawing of vertical pulling stove.The above is exactly silicon core and the application of overlapping technology in production of polysilicon thereof.
Produce in the process of polysilicon at existing Siemens Method, because the silicon core diameter that uses is generally the solid silicon core about φ 8mm or cuts the square silicon core of formation through line, overlap joint silicon core well is in normal reduction reaction process, the silicon that generates constantly is deposited on the silicon wicking surface, the surface-area of silicon core is also increasing, reactant gas molecules also increases collision opportunity and the quantity of depositional plane (silicon wicking surface) thereupon, when the sedimentation rate of unit surface was constant, the polysilicon amount of the larger deposition of surface-area also the more; Therefore when polycrystalline silicon growth, the reduction reaction time is longer, and the diameter of silicon core is larger, and the growth efficiency of polysilicon is also higher, so not only can greatly enhance productivity, and has also reduced production cost simultaneously; But existing solid silicon core or square silicon core are in reduction, all can't well overcome because the silicon core intensity of overlap joint " solid silicon core or square silicon core " is lower, the silicon core lodging phenomenon that causes thus producing in reduction process is brought unnecessary trouble and the increase of cost to production; The described lodging phenomenon of silicon core refers to that the silicon core grows in airtight container, the consequence of bringing due to filled circles silicon core or the technique of square silicon core own is:
1), solid silicon core;
Usually in 8～10MM left and right, grow to 120～150MM by 8～10MM is example to the diameter of solid silicon core, grows during beginning comparatively slow, and the later stage, the speed of growth was also accelerated thereupon along with the increasing of diameter; If directly adopt large diameter solid silicon core, can cause the weight of silicon core body to increase; And in the pulling process of major diameter solid silicon core, owing to will obtaining larger-diameter silicon core, draw rate will control to very slow, and production efficiency is low; And in process of growth because diameter is larger, stretching difficulty is high, and each drawing that only can be a small amount of, namely drawing radical will be restricted, for also having a lot of difficult points to overcome in dilated diameter problem prior art, major diameter silicon core draws the electric energy and the protective gas that consume simultaneously also increases thereupon, and major diameter silicon core also is not easy to following process and carrying simultaneously;
2), square silicon core;
The square silicon core that the line cutting occurred in the market, owing to being in the cutting on line process, crystal is subject to the microseism in diamond wire saw, make finished product side's silicon in-core more naked eyes micro-fractures inconspicuous occur, moment in silicon core growth energising is larger for the impact of slight crack, make silicon core process of growth Fracture or the amount of collapsing increase considerably, the lighter causes this group silicon core to grow, and causes blowing out when serious; The intensity that adopts so large diameter silicon core to overlap to realize the Fast Growth of polycrystalline rod and improve silicon core self has just become the technology barriers that those skilled in the art are difficult to overcome; So, be those skilled in the art's long-term demand for how to strengthen the silicon core diameter or the expanded area of silicon core is amplified.
The inventor found through experiments, and utilizes the shaped silicon core to realize preferably in the situation that identical weight can effectively realize strengthening the growth area, yet also there is no growth apparatus and template for the shaped silicon core at present.
[summary of the invention]
In order to overcome the deficiency in background technology, the invention discloses a kind of drawing template of shaped silicon core, the drawing template utilization of shaped silicon core of the present invention is shaped as " work " font groove, " ten " font groove, two " ten " word groove, " six " font groove, S shape groove or Z-shaped groove for the annular typing of melting brilliant liquid, when making seed crystal draw, the brilliant liquid of thawing draws out the seed crystal of correspondingly-shaped according to design; Structure of the present invention is unique, and the result of use of later stage shaped silicon core is better than the solid silicon core.
In order to realize the purpose of foregoing invention, the present invention adopts following technical scheme:
A kind of drawing template of shaped silicon core, comprise template, draw groove, be provided with the drawing groove on template, described drawing groove is arbitrary in " work " font groove, " ten " font groove, two " ten " word groove, " six " font groove, S shape groove or Z-shaped groove, is provided with the brilliant liquid path that connects to the template bottom in the bottom that draws groove.
The drawing template of described shaped silicon core, the bottom that draws groove is provided with the brilliant liquid path that connects to the template bottom.
The drawing template of described shaped silicon core, described brilliant liquid path is for drawing the bottom hole of groove.
The drawing template of described shaped silicon core, described brilliant liquid path directly connects bottom faces to template for drawing groove, forms brilliant liquid path by drawing the groove bottom.
The drawing template of described shaped silicon core is provided with tie point between the wall of the inwall of brilliant liquid path and wall.
The drawing template of described shaped silicon core, the material of described template are arbitrary in graphite, tungsten or molybdenum.
By above-mentioned disclosure, the invention has the beneficial effects as follows:
The drawing template of shaped silicon core of the present invention, by the drawing groove is set on template, described drawing groove is any in " work " font groove, " ten " font groove, two " ten " word groove, " six " font groove, S shape groove or Z-shaped groove, the brilliant liquid that melts enters and draws groove and just can draw out any in " work " font silicon core, " ten " font silicon core, two " ten " word silicon core, " six " font silicon core, S shape silicon core or Z-shaped silicon core, then go out identical shaped silicon core by identical shaped seed crystal lifting, realized the drawing of shaped silicon core; It is marvellous, simple in structure that the present invention conceives, and use cost is lower, and the later stage result of use is better than existing solid silicon core, has certain market and application prospect.
[description of drawings]
Fig. 1 is template of the present invention " work " font groove perspective view;
Fig. 2 is that the present invention draws " work " font silicon core perspective view;
Fig. 3 is template of the present invention " ten " font groove perspective view;
Fig. 4 is that the present invention draws " ten " font silicon core perspective view;
Fig. 5 is two " ten " word groove perspective view of template of the present invention;
Fig. 6 is two " ten " font silicon core perspective view that the present invention draws;
Fig. 7 is template of the present invention " six " font groove perspective view;
Fig. 8 is that the present invention draws " six " font silicon core perspective view;
Fig. 9 is the S shape groove perspective view of template of the present invention;
Figure 10 is the S shape silicon core perspective view that the present invention draws;
Figure 11 is the Z-shaped groove perspective view of template of the present invention;
Figure 12 is the Z-shaped silicon core perspective view that the present invention draws;
In the drawings: 1, " work " font groove; 2, template; 3, " work " font silicon core; 4, " ten " font groove; 5, " ten " font silicon core; 6, two " ten " word groove; 7, two " ten " word silicon core; 8, " six " font groove; 9, " six " font silicon core; 10, S shape groove; 11, S shape silicon core; 12, Z-shaped groove; 13, Z-shaped silicon core.
[embodiment]
Below in conjunction with embodiment, the present invention is further detailed; The following examples are not for restriction of the present invention, and only as supporting to realize mode of the present invention, any equivalent structure in technological frame disclosed in this invention is replaced, and is protection scope of the present invention;
The drawing template of the shaped silicon core described in 1～12 by reference to the accompanying drawings, comprise template, draw groove, be provided with the drawing groove on template, described drawing groove is arbitrary in " work " font groove 1, " ten " font groove 4, two " ten " word groove 6, " six " font groove 8S shape groove 10 or Z-shaped groove 12, is provided with the brilliant liquid path that connects to the template bottom in the bottom that draws groove; The bottom that draws groove is provided with the brilliant liquid path that connects to template 2 bottoms; Described brilliant liquid path directly connects to the bottom faces of template 2 for drawing groove for bottom hole or the described brilliant liquid path that draws groove, forms brilliant liquid path by drawing the groove bottom.
The present invention considers the intensity that draws groove, is provided with tie point between the wall of the inwall of brilliant liquid path and wall; Material used in the present invention needs higher than the brilliant liquid after melting, the material of described template 2 be graphite, tungsten or molybdenum in any, the thawing of template can not appear in the time of can guaranteeing to draw hollow silicon core by material.
Implement the drawing template of described hollow silicon core of the present invention, clean crystal material is put into crucible, the height of crystal material must not exceed the template upper side of template 2, with the smooth compacting of crystal material, then template 2 is placed in crucible, the outer edge surface of described template 2 or upper side are connected with locating mechanism, described template 2 and servo-actuated with locating mechanism; The supporter of crucible makes described crucible independently and does not contact with heating jacket; Then open heating jacket the crystal material that crucible is heated in crucible is melted, it is liquid that described crystal material melts; Young brilliant chuck descends with special-shaped seed crystal, the seed crystal lower end of abnormity seed crystal is inserted the present invention and is complementary in the crystal feed liquid body of fusing in " work " font groove 1, " ten " font groove 4, two " ten " word groove 6, " six " font groove 8S shape groove 10 or the Z-shaped groove 12 of template 2, then promote the tubulose seed crystal, in crucible, the crystal feed liquid of fusing can be followed seed crystal 13 risings, and the drawing groove crystal structure that has broken away from template 3 forms " work " font silicon core 3, " ten " font silicon core 5, two " ten " word silicon core 7, " six " font silicon core 9, S shape silicon core 11 or Z-shaped silicon core 13; Described crystal feed liquid body has just formed a new silicon core body, and described seed crystal is carried lower rising secretly at the brilliant chuck of son, just can form the finished silicon core of desired length.
Part not in the detailed description of the invention is prior art.
The embodiment that selects in this article in order to disclose purpose of the present invention currently thinks suitablely, still, will be appreciated that, the present invention is intended to comprise that all belong to all changes and the improvement of the embodiment in this design and invention scope.
Claims (6)
1. the drawing template of a shaped silicon core, comprise template (2), draw groove, it is characterized in that: be provided with the drawing groove on template, described drawing groove is arbitrary in " work " font groove (1), " ten " font groove (4), two " ten " word grooves (6), " six " font groove (8), S shape groove (10) or Z-shaped groove (12), is provided with the brilliant liquid path that connects to the template bottom in the bottom that draws groove.
2. the drawing template of shaped silicon core according to claim 1 is characterized in that: the bottom that draws groove is provided with the brilliant liquid path that connects to template (2) bottom.
3. the drawing template of shaped silicon core according to claim 1 is characterized in that: described brilliant liquid path is for drawing the bottom hole of groove.
4. the drawing template of shaped silicon core according to claim 1 is characterized in that: described brilliant liquid path directly connects to the bottom faces of template (2) for drawing groove, forms brilliant liquid path by drawing the groove bottom.
5. the drawing template of shaped silicon core according to claim 1 is characterized in that: be provided with tie point between the wall of the inwall of brilliant liquid path and wall.
6. the drawing template of shaped silicon core according to claim 1 is characterized in that: the material of described template (2) is arbitrary in graphite, tungsten or molybdenum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104082577A CN103160916A (en) | 2011-12-09 | 2011-12-09 | Drawing die plate for specially-shaped silicon core |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104082577A CN103160916A (en) | 2011-12-09 | 2011-12-09 | Drawing die plate for specially-shaped silicon core |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103160916A true CN103160916A (en) | 2013-06-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011104082577A Pending CN103160916A (en) | 2011-12-09 | 2011-12-09 | Drawing die plate for specially-shaped silicon core |
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| Country | Link |
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| CN (1) | CN103160916A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108545747A (en) * | 2018-06-28 | 2018-09-18 | 江阴兰雷新能源科技有限公司 | A kind of plug-in silicon core assembly |
| CN108545746A (en) * | 2018-06-28 | 2018-09-18 | 江阴兰雷新能源科技有限公司 | A kind of cross silicon core assembly of entirety and its bridging method |
| CN109970067A (en) * | 2017-12-28 | 2019-07-05 | 内蒙古盾安光伏科技有限公司 | The silicon core structure of production of polysilicon |
Citations (6)
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| US4647437A (en) * | 1983-05-19 | 1987-03-03 | Mobil Solar Energy Corporation | Apparatus for and method of making crystalline bodies |
| EP0581547A1 (en) * | 1992-07-30 | 1994-02-02 | General Electric Company | Method for providing an extension on an end of an article and extended article |
| US5558712A (en) * | 1994-11-04 | 1996-09-24 | Ase Americas, Inc. | Contoured inner after-heater shield for reducing stress in growing crystalline bodies |
| CN101323449A (en) * | 2008-07-04 | 2008-12-17 | 上海通用硅晶体材料有限公司 | Method and apparatus for enhancing polysilicon production |
| CN101432460A (en) * | 2006-04-28 | 2009-05-13 | Gt太阳能公司 | Increased polysilicon deposition in a cvd reactor |
| CN201665729U (en) * | 2009-12-31 | 2010-12-08 | 江苏中能硅业科技发展有限公司 | Device for pulling thin silicon shell with curved surface |
-
2011
- 2011-12-09 CN CN2011104082577A patent/CN103160916A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4647437A (en) * | 1983-05-19 | 1987-03-03 | Mobil Solar Energy Corporation | Apparatus for and method of making crystalline bodies |
| EP0581547A1 (en) * | 1992-07-30 | 1994-02-02 | General Electric Company | Method for providing an extension on an end of an article and extended article |
| US5558712A (en) * | 1994-11-04 | 1996-09-24 | Ase Americas, Inc. | Contoured inner after-heater shield for reducing stress in growing crystalline bodies |
| CN101432460A (en) * | 2006-04-28 | 2009-05-13 | Gt太阳能公司 | Increased polysilicon deposition in a cvd reactor |
| CN101323449A (en) * | 2008-07-04 | 2008-12-17 | 上海通用硅晶体材料有限公司 | Method and apparatus for enhancing polysilicon production |
| CN201665729U (en) * | 2009-12-31 | 2010-12-08 | 江苏中能硅业科技发展有限公司 | Device for pulling thin silicon shell with curved surface |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109970067A (en) * | 2017-12-28 | 2019-07-05 | 内蒙古盾安光伏科技有限公司 | The silicon core structure of production of polysilicon |
| CN108545747A (en) * | 2018-06-28 | 2018-09-18 | 江阴兰雷新能源科技有限公司 | A kind of plug-in silicon core assembly |
| CN108545746A (en) * | 2018-06-28 | 2018-09-18 | 江阴兰雷新能源科技有限公司 | A kind of cross silicon core assembly of entirety and its bridging method |
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Application publication date: 20130619 |