CN107555437A - The high polycrystalline silicon rod of cutting accuracy - Google Patents
The high polycrystalline silicon rod of cutting accuracy Download PDFInfo
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- CN107555437A CN107555437A CN201710940490.7A CN201710940490A CN107555437A CN 107555437 A CN107555437 A CN 107555437A CN 201710940490 A CN201710940490 A CN 201710940490A CN 107555437 A CN107555437 A CN 107555437A
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- silicon rod
- section
- silicon
- monocrystalline
- cutting
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Abstract
The present invention relates to a kind of high polycrystalline silicon rod of cutting accuracy, and it includes columned silicon rod body(1), the silicon rod body(1)Including two sections, its epimere is polysilicon section(1.2), hypomere is monocrystalline silicon section(1.1), the monocrystalline silicon section(1.1)Periphery wall on be evenly arranged with four crest lines along its length(1.3), the monocrystalline silicon section(1.1)End face on be provided with four guiding resin streaks(2), four guiding resin streaks(2)One square of end to end formation, the position at square four angles and monocrystalline silicon section(1.1)Four crest lines on periphery wall(1.3)Position it is corresponding.A kind of high polycrystalline silicon rod of cutting accuracy of the present invention, it increases in silicon rod monocrystalline section is oriented to resin streak, diamond wire cuts to guiding resin streak first during cutting, perpendicularity can be cut to silicon rod and be adjusted positioning, diamond wire produces deviation with silicon rod during so as to prevent cutting, and final product quality and lumber recovery has been effectively ensured.
Description
Technical field
The present invention relates to a kind of high polycrystalline silicon rod of cutting accuracy, belong to technical field of polysilicon production.
Background technology
At present, it is all the conventional hydrogen reduction of trichlorosilane that the technique of domestic production polysilicon is most of at present, i.e. improvement west
The capital equipment of Men Zifa, improved Siemens or other similar approach production major diameter polysilicon is polycrystalline silicon reducing furnace, more
Crystal silicon reduction furnace is electrified on elongated silicon core, is made the heating of silicon core rubescent, until surface temperature reaches 1100 degrees Celsius, is led to
Enter high-purity trichlorosilane and hydrogen, make it that hydrogen reduction reaction occur at high temperature, the silicon packing of molecules in trichlorosilane is existed
On silicon core, its diameter is set constantly to increase, generally, the diameter of silicon core can be that circle can also be square in 7-10 millimeters,
Or other shapes, diameter is constantly increased to 120-200 millimeters eventually through hydrogen reduction reaction, produce high-purity solar energy
Level 6N or electron level 11N polysilicon device can not be applied to the test of square silicon core in factory.
The preparation method of silicon core has two kinds at present, and traditional method is to use CZ methods(Melt czochralski method in area), i.e., diameter in 20-
50 millimeters of silicon rod uses high-frequency induction heating in the vacuum hearth full of inert gas, makes its top local melting, from top
Seed crystal of 1 diameter in 5-10 millimeters is put into, then slowly lifting upwards, becomes diameter and exist in 7-10 millimeters, length
Elongated silicon core between 1900-3000 millimeters, its shortcoming are that pull rate is slow, generally 8-12 mm/mins, draw 12 meters
Silicon core need 4 hours, low production efficiency, power consumption is big, and equipment investment is big.
Another kind is to use diamond tool patterning method, and Diamond Wire Technology companies of the U.S. develop use
The elongated silicon multiline cutting machine of numerical-control polysilicon of diamond wire, the preparation for silicon core.By using the upper diamond of plating
The finer wire line of particulate is moved back and forth at high speed on workpiece to be machined or unidirectional movement, and silicon rod is pressed in into the lathe diamond
Line intersects on the square gauze of composition, so as to which the silicon rod to be cut into elongated silicon core.Its advantage is fairly obvious, 10-12 hours
The square silicon core of 200 or so 2 meters long of 7X7 or 8X8 millimeters can be cut out, power consumption is small, high in machining efficiency.
The masterbatch of silicon core cutting at present directly uses obtained silicon rod in reduction furnace, and silicon core needs to hang silicon rod when cutting
To cutting machine, when silicon rod is cut the regulation of its perpendicularity get up to be inconvenient, diamond wire easily produces inclined with silicon rod during cutting
From so as to influence final product quality and lumber recovery.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of cutting accuracy high polysilicon for above-mentioned prior art
Rod, its diamond wire in silicon rod monocrystalline section increase guiding resin streak, cutting cut to guiding resin streak first, can be to silicon rod
Cutting perpendicularity is adjusted positioning, and diamond wire and silicon rod produce deviation during so as to prevent cutting, have been effectively ensured finally
Product quality and lumber recovery.
Technical scheme is used by the present invention solves the above problems:A kind of high polycrystalline silicon rod of cutting accuracy, it includes
Columned silicon rod body, the silicon rod body include two sections, and its epimere is polysilicon section, and hypomere is monocrystalline silicon section, institute
State and be evenly arranged with four crest lines on the periphery wall of monocrystalline silicon section along its length, be provided with the end face of the monocrystalline silicon section
Four guiding resin streaks, the guiding resin streak and the end face of monocrystalline silicon section are arranged vertically, and four guiding resin streaks are end to end
A square is formed, the position at square four angles is corresponding with the position of four crest lines on monocrystalline silicon section periphery wall.
Compared with prior art, the advantage of the invention is that:
A kind of high polycrystalline silicon rod of cutting accuracy of the present invention, it is used as positioning base by the use of the crest line on silicon rod monocrystalline silicon section periphery wall
Standard, in silicon rod monocrystalline section end face increase guiding resin streak, cutting, diamond wire cuts to guiding resin streak first, can be to silicon
Rod cutting perpendicularity is adjusted positioning, and diamond wire and silicon rod produce deviation during so as to prevent cutting, have been effectively ensured finally
Product quality and lumber recovery.
Brief description of the drawings
Fig. 1 is a kind of structural representation of the high polycrystalline silicon rod of cutting accuracy of the present invention.
Wherein:
Silicon rod body 1
Monocrystalline silicon section 1.1
Polysilicon section 1.2
Crest line 1.3
It is oriented to resin streak 2.
Embodiment
The present invention is described in further detail below in conjunction with accompanying drawing embodiment.
As shown in figure 1, the polycrystalline silicon rod that a kind of cutting accuracy in the present embodiment is high, it includes columned silicon rod body
1, the silicon rod body 1 includes two sections, and its epimere is polysilicon section 1.2, and hypomere is monocrystalline silicon section 1.1, the monocrystalline silicon
Four crest lines 1.3 are evenly arranged with along its length on the periphery wall of section 1.1, are set on the end face of the monocrystalline silicon section 1.1
There are four guiding resin streaks 2, the guiding resin streak 2 and the end face of monocrystalline silicon section 1.1 are arranged vertically, four guiding resin streaks 2
One square of end to end formation, position and four crest lines 1.3 on the periphery wall of monocrystalline silicon section 1.1 at square four angles
Position is corresponding;
Silicon rod is hung to cutting machine during cutting, the diamond wire of cutting machine intersects the square gauze formed gradually to be cut upwards
Cut, adjust the angle position of silicon rod, the position of the guiding resin streak and square gauze of quadrangle on end surface of monocrystalline silicon is matched,
Even if the diamond wire perpendicular cuts of square gauze are entered to be oriented to resin streak, so as to complete the cutting of silicon rod positioning, ensure follow-up
Cutting accuracy and quality.
In addition to the implementation, it is all to use equivalent transformation or equivalent replacement present invention additionally comprises there is other embodiment
The technical scheme that mode is formed, it all should fall within the scope of the hereto appended claims.
Claims (1)
- A kind of 1. high polycrystalline silicon rod of cutting accuracy, it is characterised in that:It includes columned silicon rod body(1), the silicon rod Body(1)Including two sections, its epimere is polysilicon section(1.2), hypomere is monocrystalline silicon section(1.1), the monocrystalline silicon section (1.1)Periphery wall on be evenly arranged with four crest lines along its length(1.3), the monocrystalline silicon section(1.1)End face on It is provided with four guiding resin streaks(2), the guiding resin streak(2)With monocrystalline silicon section(1.1)End face be arranged vertically, four are led To resin streak(2)One square of end to end formation, the position at square four angles and monocrystalline silicon section(1.1)On periphery wall Four crest lines(1.3)Position it is corresponding.
Priority Applications (1)
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CN201710940490.7A CN107555437A (en) | 2017-10-11 | 2017-10-11 | The high polycrystalline silicon rod of cutting accuracy |
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CN201710940490.7A CN107555437A (en) | 2017-10-11 | 2017-10-11 | The high polycrystalline silicon rod of cutting accuracy |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107538631A (en) * | 2017-11-03 | 2018-01-05 | 江阴东升新能源股份有限公司 | Small-sized side's silicon core hi-precision cutting technique |
CN110789011A (en) * | 2019-11-07 | 2020-02-14 | 北京昌日新能源科技有限公司 | Novel photovoltaic right-angle monocrystalline silicon piece and manufacturing method thereof |
CN114589822A (en) * | 2022-04-21 | 2022-06-07 | 青岛高测科技股份有限公司 | Method for vertically cutting silicon rod by four lines, cutting equipment and cutting system |
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CN201552681U (en) * | 2009-11-10 | 2010-08-18 | 高佳太阳能股份有限公司 | Positioning plate used for cutting single crystal of eight inches |
CN201808158U (en) * | 2010-09-21 | 2011-04-27 | 上海信富电子科技有限公司 | Solar silicon chip cutting directing bar |
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CN205497833U (en) * | 2016-04-20 | 2016-08-24 | 重庆四和晶工科技有限公司 | Single silicon rod squaring machine head structure |
CN206351496U (en) * | 2017-01-04 | 2017-07-25 | 山西东明光伏科技有限公司 | A kind of squaring silicon bar machine |
CN207294190U (en) * | 2017-10-11 | 2018-05-01 | 江阴东升新能源股份有限公司 | The high polycrystalline silicon rod of cutting accuracy |
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Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN201552681U (en) * | 2009-11-10 | 2010-08-18 | 高佳太阳能股份有限公司 | Positioning plate used for cutting single crystal of eight inches |
CN201808158U (en) * | 2010-09-21 | 2011-04-27 | 上海信富电子科技有限公司 | Solar silicon chip cutting directing bar |
CN102839418A (en) * | 2011-06-26 | 2012-12-26 | 江苏顺大半导体发展有限公司 | Silicon single crystal rod |
US20130295403A1 (en) * | 2012-05-02 | 2013-11-07 | MEMC Singapore Pte. Ltd.(UEN200614794D) | Systems and methods for ingot grinding |
CN103434031A (en) * | 2013-07-19 | 2013-12-11 | 江苏美科硅能源有限公司 | Method for cutting silicon ingot |
CN103753715A (en) * | 2014-01-23 | 2014-04-30 | 英利能源(中国)有限公司 | Processing method for reusing unqualified chamfered silicon briquette |
CN205497833U (en) * | 2016-04-20 | 2016-08-24 | 重庆四和晶工科技有限公司 | Single silicon rod squaring machine head structure |
CN206351496U (en) * | 2017-01-04 | 2017-07-25 | 山西东明光伏科技有限公司 | A kind of squaring silicon bar machine |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107538631A (en) * | 2017-11-03 | 2018-01-05 | 江阴东升新能源股份有限公司 | Small-sized side's silicon core hi-precision cutting technique |
CN107538631B (en) * | 2017-11-03 | 2019-11-19 | 江阴东升新能源股份有限公司 | Small-sized side's silicon core hi-precision cutting technique |
CN110789011A (en) * | 2019-11-07 | 2020-02-14 | 北京昌日新能源科技有限公司 | Novel photovoltaic right-angle monocrystalline silicon piece and manufacturing method thereof |
CN114589822A (en) * | 2022-04-21 | 2022-06-07 | 青岛高测科技股份有限公司 | Method for vertically cutting silicon rod by four lines, cutting equipment and cutting system |
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