CN108789887A - A kind of cross silicon core cutting method of entirety - Google Patents
A kind of cross silicon core cutting method of entirety Download PDFInfo
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- CN108789887A CN108789887A CN201810681601.1A CN201810681601A CN108789887A CN 108789887 A CN108789887 A CN 108789887A CN 201810681601 A CN201810681601 A CN 201810681601A CN 108789887 A CN108789887 A CN 108789887A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
Abstract
The invention discloses a kind of cross silicon core cutting method of entirety, the cross silicon core of entirety that the CVD reduction furnaces for processing in polycrystalline silicon raw material production process use comprising following steps：1) monocrystalline silicon or polysilicon rod cross section is cut into be square or rectangular several rectangular silicon rods；2) rectangular silicon rod is fixed on cutting equipment, length direction by cutting equipment along rectangular silicon rod is cut, and it is the silicon core of " ten " font and the four small rectangular silicon rod positioned at former rectangular silicon rod quadrangle to form disconnected from each other one to be located at the cross section of former rectangular silicon rod middle.The above-mentioned cross silicon core cutting method of entirety is convenient for molding for the cross silicon core of the entirety of polysilicon CVD polycrystalline silicon reducing furnaces.It is not only high in machining efficiency, energy consumption is saved, it is at low cost；And silicon rod utilization rate is high, is lost in addition to cutter stitch, no waste of material.
Description
Technical field
The invention belongs to polycrystalline silicon raw material processing technologies, more particularly, to the CVD in a kind of polycrystalline silicon raw material production process
The cross silicon core cutting method of entirety that reduction furnace uses.
Background technology
Due to the fast development of photovoltaic industry, the demand growth of high-purity polycrystalline silicon raw material is swift and violent, and production is more both at home and abroad at present
The technique of crystal silicon raw material is all largely the hydrogen reduction of trichlorosilane, i.e. improved Siemens, improved Siemens or other classes
The capital equipment that major diameter polysilicon is produced like method is polycrystalline silicon reducing furnace, by three circles first in polycrystalline silicon reducing furnace
Or rectangular silicon core is overlapped to form inverted U, is electrified on elongated silicon core, keeps the heating of silicon core rubescent, until surface temperature reaches
To 1050-1100 degrees Celsius, it is passed through high-purity trichlorosilane and hydrogen, makes it that hydrogen reduction reaction occur at high temperature, makes trichlorine
Silicon packing of molecules in hydrogen silicon makes its diameter constantly increase on silicon core, in general, the diameter of silicon core is at 7-15 millimeters, it can
It can also be square or other shapes to be circle, so that diameter is constantly increased to 120-200 eventually by hydrogen reduction reaction
Millimeter, produces the polycrystalline silicon raw material stick of high-purity solar level 6N or electron level 11N, recycles CZ czochralski crystal growing furnaces to draw after being crushed
Monocrystal rod is made, or polysilicon silicon ingot is cast using polycrystalline silicon ingot or purifying furnace.
The preparation method of existing silicon core has two kinds, and traditional method is to use CZ methods (melting czochralski method in area), low production efficiency, electric power
Consumption is big, and equipment investment is big.Another kind is to use diamond tool patterning method, using the numerical-control polysilicon silicon for using diamond fretsaw
Multiline cutting machine or similar devices are used for the preparation of silicon core.Finer wire line by using the upper diamond particle of plating exists
It is moved back and forth at high speed on workpiece to be machined or unidirectional mobile, diameter 100-300mm silicon rods is pressed in the lathe diamond wire
On the rectangular gauze for intersecting composition, to which the silicon rod to be cut into elongated rectangular silicon core, power consumption is small, high in machining efficiency.
This inverted U for polysilicon CVD polycrystalline silicon reducing furnaces overlapped silicon core assembly is usually referred to as " silicon core
Component ".The prior art is when overlapping silicon core assembly, the round silicon core of usually used a diameter of 8-10mm, or use 7*7~
The rectangular silicon core of 15*15mm.During CVD reduction reactions, the silicon materials for reacting generation are constantly deposited on silicon wicking surface, silicon core
Surface area can be increasing, reaction gas can also increase the collision opportunity and quantity of silicon wicking surface therewith.Work as unit area
Deposition rate it is constant when, silicon wicking surface product it is bigger, the unit interval production polysilicon weight it is also more.So more to improve
The yield of crystal silicon unit interval improves the surface area of initial silicon core assembly, can not only improve the yield of polysilicon, meanwhile, by
In the shortening in reaction time, production cost can also be greatly reduced.But use usually used solid circles silicon core or side
Shape silicon core, the application of large-diameter circular or rectangular silicon core, although the production cost of polysilicon can be significantly reduced, silicon core
The production cost is very high, and since the weight of silicon core increases, the increasing of the weight of silicon core causes silicon core weight in polysilicon product
In weight accounting it is increasing, seriously affect the purity of silicon materials.
So the technical staff of every country is being dedicated to researching and developing the big and light-weight polycrystalline silicon core of surface area more,
GTAT companies of the U.S. are entitled in its Patent No. 200780015406.5《That is improved in CVD reactor is more
Crystal silicon deposits》Patent document in disclose traditional silicon core replaced by circular hollow silicone tube with a kind of cross section, to come
Yield is improved, the reaction time is shortened.But since hollow silicone tube drawing is very difficult, cost is also very high, does not also obtain extensive
Implement.
Chinese in Luoyang Jin Nuo mechanical engineerings Co., Ltd is entitled in its Patent No. 201610002833.0《A kind of sky
Heart component and its silicon core assembly》Patent document in using more sheet silicon plate or silicon rod join end to end, to reach hollow silicon
Core, although single silicon plate or silicon rod are drawn or cutting difficulty is less than the hollow silicone tube of GTAT companies of the U.S., it is overlapped to form sky
The silicon core assembly difficulty of the heart is larger, is not also implemented on a large scale equally.
Chinese Asia silicon industry (Qinghai) Co., Ltd is entitled in its Patent No. 201710977922.1《A kind of reduction
Stove silicon core and reduction furnace》Patent document disclosed in using 4 sheet silicon plates and 1, center be provided with three or four have protrusion or
The circle silicon rod of groove is connected, to reach the cross silicon core of combination, but its overlapped that each silicon core is required to up to 1500-
4000mm silicon core carries out fluting processing from the beginning to the end, and the difficulty for forming component is larger, is not implemented on a large scale at present.
And large scale side's silicon core is used merely, it can achieve the purpose that volume increase consumption reduction, but since silicon core cross section is excessive,
It causes silicon core to expand in the weight accounting of finished product silicon material, influences the quality decline of finished product silicon material.
Invention content
The purpose of the present invention is to provide a kind of cross silicon core cutting methods of entirety, more to solve to be used in the prior art
Processing efficiency existing for the silicon core of crystal silicon CVD polycrystalline silicon reducing furnaces is low and big problem is lost.
For this purpose, the present invention uses following technical scheme：
A kind of cross silicon core cutting method of entirety comprising following steps：
1) monocrystalline silicon or polysilicon rod cross section is cut into be square or rectangular several rectangular silicon rods；
2) rectangular silicon rod is fixed on cutting equipment, the length direction by cutting equipment along rectangular silicon rod is cut
It cuts, forms disconnected from each other one and be located at the cross section of former rectangular silicon rod middle for the silicon core of " ten " font and positioned at former rectangular
The four small rectangular silicon rod of silicon rod quadrangle.
Particularly, in the step 1) monocrystalline silicon or polysilicon rod be draw 100~300mm of diameter between circle
Silicon rod.
Particularly, rectangular between monocrystalline silicon or 100~300mm of the length of side that polysilicon rod is ingot casting in the step 1)
Silicon rod.
Particularly, the cross section size dimension of rectangular silicon rod is 20~100mm in the step 1).
Particularly, the cutting equipment of the step 2) is using the scribing wheel between 0.3~1mm of thickness.
Particularly, cutting equipment is carried out successively using four sides of square shaped silicon rod along its length in the step 2)
The cutting mode of substep only carries out cutting operation to a side every time, need to carry out four cuttings altogether.
Particularly, cutting equipment is carried out at the same time using two sides of square shaped silicon rod along its length in the step 2)
The mode of cutting carries out cutting operation to two sides every time, need to carry out cutting twice altogether.
Particularly, cutting equipment is carried out at the same time using four sides of square shaped silicon rod along its length in the step 2)
The mode of cutting is only once cut.
Particularly, in the step 2) cross section of the silicon core of " ten " font 20~100mm of width range, thickness 2~
Between 8mm, length is between 200~4500mm.
Particularly, in the step 2) side size range of the cross section of four small rectangular silicon rod between 20~100mm,
Length is between 200~4500mm.
Beneficial effects of the present invention are that the cross silicon core cutting method of the entirety is convenient for molding compared with prior art
The cross silicon core of entirety for polysilicon CVD polycrystalline silicon reducing furnaces.It is not only high in machining efficiency, energy consumption is saved, it is at low cost；And
Silicon rod utilization rate is high, is lost in addition to cutter stitch, no waste of material.
Description of the drawings
Fig. 1 is the dimensional structure diagram of the rectangular silicon rod of the cross silicon core cutting method of entirety provided by the invention；
Fig. 2 is the stereochemical structure signal after the rectangular silicon rod cutting of the cross silicon core cutting method of entirety provided by the invention
Figure；
Fig. 3 is the sectional view after the rectangular silicon rod cutting of the cross silicon core cutting method of entirety provided by the invention；
Fig. 4 is the discrete state figure after the rectangular silicon rod cutting of the cross silicon core cutting method of entirety provided by the invention；
Fig. 5 is showing for the first time cutting for the cross silicon core cutting method of entirety that the specific embodiment of the invention 1 provides
It is intended to；
Fig. 6 is showing for second of cutting of the cross silicon core cutting method of entirety that the specific embodiment of the invention 1 provides
It is intended to；
Fig. 7 is showing for the third time cutting for the cross silicon core cutting method of entirety that the specific embodiment of the invention 1 provides
It is intended to；
Fig. 8 is showing for the 4th cutting of the cross silicon core cutting method of entirety that the specific embodiment of the invention 1 provides
It is intended to.
Specific implementation mode
Technical solution to further illustrate the present invention below with reference to the accompanying drawings and specific embodiments.
It please refers to Fig.1 to providing a kind of cross silicon core cutting method of entirety shown in Fig. 8, in the present embodiment comprising with
Lower step：
1) processing of rectangular silicon rod：By the circular single crystal silicon or polysilicon rod between 100~300mm of diameter of drawing,
Can also be ingot casting 100~300mm of the length of side between prismatic single crystal silicon ingot or polysilicon rod, cut into the length of side be 20~
The rectangular silicon core of 100mm is square or rectangular more rectangular silicon rods 1 to obtain section；
2) silicon core excision forming：It first will at least a rectangular silicon rod 1 be fixed on cutting equipment 2, cut along cut direction
The scribing wheel 3 that thickness made of multiple diamonds or other superhard materials is 0.3~1mm, scribing wheel are installed in equipment 2
3 carry out the cutting mode of substep successively using four sides of square shaped silicon rod 1 along its length, and four sides are defined as successively
First side 1a, second side 1b, third side 1c and the 4th side 1d, specific cutting step are：
Step 1：First upward by the first side 1a of rectangular silicon rod 1, then by two scribing wheels 3 in first side 1a
It is cut into twice cutting seam 4a along 1 length direction of rectangular silicon rod, twice cutting seam 4a parallel intervals are arranged, and with first side
1a is symmetrical along the center line of 1 length direction of direction silicon rod, and the depth of cutting seam 4a is less than the cross-sectional height of rectangular silicon rod 1
Half；
Step 2：Direction silicon rod 1 is rotated 180 °, i.e., upward by the third side 1c of opposite first side 1a, passes through two
A cutting guide wheel 3 is cut into twice cutting seam 4c in third side 1c along 1 length direction of rectangular silicon rod, and twice cutting seam 4c is put down
Between-line spacing is arranged, and symmetrical along the center line of 1 length direction of direction silicon rod with third side 1c, and the depth of cutting seam 4c is less than
The half of the cross-sectional height of rectangular silicon rod 1, i.e. cutting seam 4c are correspondingly arranged with cutting seam 4a but are not connected to；
Step 3：Direction silicon rod 1 is rotated 90 °, i.e., is surpassed second side 1b, by two cutting guide wheels 3 second
Side 1b is cut into twice cutting seam 4b along 1 length direction of rectangular silicon rod, twice cutting seam 4b parallel intervals setting, and with the
Two side faces 1b is symmetrical along the center line of 1 length direction of direction silicon rod, and it is therein together cutting seam 4b bottom end with it is adjacent
The bottom end connection of cutting seam 4a and orthogonal, the bottom of the bottom end of another road cutting seam 4b and the adjacent seam of cutting together 4c together
End connection and it is orthogonal；Two, the top angle of rectangular silicon rod 1 is set to form two small rectangular silicon rod 5, by two small rectangular silicon rod 5
It removes；
Step 4：Direction silicon rod 1 is rotated 180 °, i.e., is surpassed the 4th side 1d, by two cutting guide wheels 3 the 4th
Side 1d is cut into twice cutting seam 4d along 1 length direction of rectangular silicon rod, twice cutting seam 4d parallel intervals setting, and with the
Four side 1d are symmetrical along the center line of 1 length direction of direction silicon rod, and it is therein together cutting seam 4d bottom end with it is adjacent
The bottom end connection of another road cutting seam 4a and orthogonal, the bottom end of another road cutting seam 4d and adjacent another road cutting seam 4c
Bottom end connection and it is orthogonal.Two, the top angle of rectangular silicon rod 1 is so set to form other two small rectangular silicon rod 5, by two
A small rectangular silicon rod 5 forms the cross silicon core of entirety 6 that cross section is " ten " font after removing.
Between 20~100mm of width range of the cross section of whole cross silicon core 6,2~8mm of thickness, length is 200
Between~4500mm.The side size range of the cross section of four small rectangular silicon rod 5 between 20~100mm, length 200~
Between 4500mm.
Cutting equipment 2 can simultaneously cut more rectangular silicon rods 1 in cutting, can also be only rectangular to one
Silicon rod 1 is cut.
Certainly, when specific silicon core is cut, following cutting mode can also be used in cutting equipment 2：
1) 90 ° are overturn clockwise after cutting every time, successively to first side 1a, the 4th side 1d, third side 1c, second
Side 1b carries out cutting seaming and cutting and cuts；Or every time cutting after overturn 90 ° counterclockwise, successively to first side 1a, second side 1b,
Third side 1c, the 4th side 1d carry out cutting seaming and cutting and cut, and are cut into above-mentioned steps silicon core as the split requirement of cutting seam
The requirement of type is consistent.
2) cutting equipment 2 is changed by the arrangement of scribing wheel 3, using square shaped silicon rod along its length when cutting
1 two adjacent or opposite sides are carried out at the same time the mode of cutting, carry out cutting operation to two sides every time, need to carry out altogether
Cutting twice, it is consistent with the requirement of above-mentioned steps silicon core excision forming as the split requirement of cutting seam.
3) cutting equipment 2 is changed by the arrangement of scribing wheel 3, using square shaped silicon 1 along its length when cutting
Four sides of stick are carried out at the same time the mode of cutting, are only once cut, as the split requirement and above-mentioned steps of cutting seam
The requirement of silicon core excision forming is consistent.
Above example is to elaborate that the basic principle and characteristic of the present invention, the present invention are not limited by above-mentioned example,
Without departing from the spirit and scope, the present invention also has various changes, these changes and modifications are both fallen within
In scope of the claimed invention.The scope of the present invention is defined by the appended claims and its equivalents.
Claims (10)
1. a kind of cross silicon core cutting method of entirety, which is characterized in that it includes the following steps：
1) monocrystalline silicon or polysilicon rod cross section is cut into be square or rectangular several rectangular silicon rods；
2) rectangular silicon rod is fixed on cutting equipment, the length direction by cutting equipment along rectangular silicon rod is cut, shape
The cross section for being located at former rectangular silicon rod middle at disconnected from each other one is for the silicon core of " ten " font and positioned at former rectangular silicon rod
The four small rectangular silicon rod of quadrangle.
2. the cross silicon core cutting method of entirety according to claim 1, which is characterized in that monocrystalline silicon in the step 1)
Or polysilicon rod is the round silicon rod between the 100~300mm of diameter drawn.
3. the cross silicon core cutting method of entirety according to claim 1, which is characterized in that monocrystalline silicon in the step 1)
Or the rectangular silicon rod between 100~300mm of the length of side that polysilicon rod is ingot casting.
4. the cross silicon core cutting method of entirety according to claim 1, which is characterized in that rectangular silicon in the step 1)
The cross section size dimension of stick is 20~100mm.
5. the cross silicon core cutting method of entirety according to claim 1, which is characterized in that the cutting of the step 2) is set
Scribing wheel between standby 0.3~1mm using thickness.
6. the cross silicon core cutting method of entirety according to claim 1, which is characterized in that cutting is set in the step 2)
Standby four sides using square shaped silicon rod along its length carry out the cutting mode of substep successively, every time only to a side into
Row cutting operation need to carry out four cuttings altogether.
7. the cross silicon core cutting method of entirety according to claim 1, which is characterized in that cutting is set in the step 2)
For in such a way that two sides of square shaped silicon rod along its length are carried out at the same time cutting, two sides are cut every time
Operation, need to carry out cutting twice altogether.
8. the cross silicon core cutting method of entirety according to claim 1, which is characterized in that cutting is set in the step 2)
For in such a way that four sides of square shaped silicon rod along its length are carried out at the same time cutting, only once cut.
9. the cross silicon core cutting method of entirety according to claim 1, which is characterized in that " ten " word in the step 2)
Between 20~100mm of width range of the cross section of the silicon core of type, 2~8mm of thickness, length is between 200~4500mm.
10. the cross silicon core cutting method of entirety according to claim 1, which is characterized in that four in the step 2)
The side size range of the cross section of small rectangular silicon rod is between 20~100mm, and length is between 200~4500mm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111676510A (en) * | 2020-06-22 | 2020-09-18 | 四川永祥多晶硅有限公司 | Method for manufacturing silicon core by using non-washing-free material |
| WO2021098228A1 (en) * | 2019-11-19 | 2021-05-27 | 常州时创能源股份有限公司 | Production method for four-chamfer small cell sheet |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101979721A (en) * | 2010-09-19 | 2011-02-23 | 山东伟基炭科技有限公司 | Silicon core rods and silicon core structure for growth of polycrystalline silicon |
| CN102284673A (en) * | 2011-05-15 | 2011-12-21 | 张家港海锅重型锻件有限公司 | Manufacturing method of cross-shaped forging piece |
| JP2013026584A (en) * | 2011-07-26 | 2013-02-04 | Okamoto Machine Tool Works Ltd | Cutting apparatus and cutting method for processing cylindrical ingot block into rectangular prismatic block |
| CN105904170A (en) * | 2016-06-27 | 2016-08-31 | 山东建筑大学 | Technology and die for processing high-strength 20CrMo universal joint pin differential mechanism |
| CN107673357A (en) * | 2017-10-17 | 2018-02-09 | 亚洲硅业（青海）有限公司 | A kind of reduction furnace silicon core and reduction furnace |
| CN107838751A (en) * | 2017-11-22 | 2018-03-27 | 西安航天发动机厂 | Processing method with point of a knife cross cutting knife |
-
2018
- 2018-06-27 CN CN201810681601.1A patent/CN108789887A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101979721A (en) * | 2010-09-19 | 2011-02-23 | 山东伟基炭科技有限公司 | Silicon core rods and silicon core structure for growth of polycrystalline silicon |
| CN102284673A (en) * | 2011-05-15 | 2011-12-21 | 张家港海锅重型锻件有限公司 | Manufacturing method of cross-shaped forging piece |
| JP2013026584A (en) * | 2011-07-26 | 2013-02-04 | Okamoto Machine Tool Works Ltd | Cutting apparatus and cutting method for processing cylindrical ingot block into rectangular prismatic block |
| CN105904170A (en) * | 2016-06-27 | 2016-08-31 | 山东建筑大学 | Technology and die for processing high-strength 20CrMo universal joint pin differential mechanism |
| CN107673357A (en) * | 2017-10-17 | 2018-02-09 | 亚洲硅业（青海）有限公司 | A kind of reduction furnace silicon core and reduction furnace |
| CN107838751A (en) * | 2017-11-22 | 2018-03-27 | 西安航天发动机厂 | Processing method with point of a knife cross cutting knife |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021098228A1 (en) * | 2019-11-19 | 2021-05-27 | 常州时创能源股份有限公司 | Production method for four-chamfer small cell sheet |
| CN111676510A (en) * | 2020-06-22 | 2020-09-18 | 四川永祥多晶硅有限公司 | Method for manufacturing silicon core by using non-washing-free material |
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