CN208485605U - A kind of cross silicon core assembly of entirety - Google Patents
A kind of cross silicon core assembly of entirety Download PDFInfo
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- CN208485605U CN208485605U CN201821020699.8U CN201821020699U CN208485605U CN 208485605 U CN208485605 U CN 208485605U CN 201821020699 U CN201821020699 U CN 201821020699U CN 208485605 U CN208485605 U CN 208485605U
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Abstract
The utility model discloses a kind of cross silicon core assemblies of entirety, the silicon core assembly includes the two vertical silicon cores and a horizontally arranged silicon core crossbeam of vertical direction parallel interval setting, the silicon core crossbeam is overlapped between the top of described two vertical silicon cores, inverse u shape structure is integrally formed, wherein, the vertical silicon core and silicon core crossbeam are all made of whole silicon materials and cut, and cross section is " ten " font structure, the both ends of the silicon core crossbeam are overlapped by clamping structure and the vertical silicon core.For the above-mentioned cross silicon core assembly of entirety using cross silicon core made of integral cutting, intensity is high, and shove charge is convenient, is not easily broken, the probability of falling furnace is small.The whole silicon core assembly being spliced is light-weight, and surface area is big, can significantly shorten the reaction time of reduction furnace, reduce the production cost of polysilicon, improve the purity of polysilicon.
Description
Technical field
The utility model belongs to polycrystalline silicon raw material processing technology, more particularly, in a kind of polycrystalline silicon raw material production process
The cross silicon core assembly of the entirety that CVD reduction furnace uses.
Background technique
Due to the fast development of photovoltaic industry, the demand growth of high-purity polycrystalline silicon raw material is swift and violent, and production is more both at home and abroad at present
It is all the hydrogen reduction of trichlorosilane that the technique of crystal silicon raw material is most of, i.e. improved Siemens, improved Siemens or other classes
Capital equipment like method production major diameter polysilicon is polycrystalline silicon reducing furnace, by three circles first in polycrystalline silicon reducing furnace
Or rectangular silicon core is overlapped to form inverted U, is electrified on elongated silicon core, keeps the heating of silicon core rubescent, until surface temperature reaches
To 1050-1100 degrees Celsius, it is passed through high-purity trichlorosilane and hydrogen, makes it that hydrogen reduction reaction occur at high temperature, makes trichlorine
Silicon packing of molecules in hydrogen silicon increases its diameter constantly on silicon core, in general, the diameter of silicon core is at 7-15 millimeters, it can
To be that circle is also possible to square or other shapes, diameter is set constantly to increase to 120-200 eventually by hydrogen reduction reaction
Millimeter, produces the polycrystalline silicon raw material stick of high-purity solar level 6N or electron level 11N, recycles CZ czochralski crystal growing furnace to draw after being crushed
Monocrystal rod is made, or casts polysilicon silicon ingot using polycrystalline silicon ingot or purifying furnace.
The preparation method of existing silicon core has two kinds, and traditional method is to use CZ method (melting czochralski method in area), and production efficiency is low, electric power
Consumption is big, and equipment investment is big.Another kind is to use diamond tool patterning method, using the numerical-control polysilicon silicon for using diamond fretsaw
Multiline cutting machine or similar devices, the preparation for silicon core.By being existed using the finer wire line that upper diamond particle is electroplated
It is moved back and forth at high speed on workpiece to be machined or unidirectional mobile, diameter 100-300mm silicon rod is pressed in the lathe diamond wire
On the rectangular gauze for intersecting composition, so that the silicon rod to be cut into elongated rectangular silicon core, power consumption is small, high in machining efficiency.
This inverted U for being used for polysilicon CVD polycrystalline silicon reducing furnace overlapped silicon core assembly is usually referred to as " silicon core
Component ".The prior art is when overlapping silicon core assembly, the round silicon core for being 8-10mm usually using diameter, or use 7*7~
The rectangular silicon core of 15*15mm.During CVD reduction reaction, the silicon materials for reacting generation are constantly deposited on silicon wicking surface, silicon core
Surface area can be increasing, reaction gas can also increase with it the collision opportunity and quantity of silicon wicking surface.Work as unit area
Deposition rate it is constant when, silicon wicking surface product it is bigger, the unit time production polysilicon weight it is also more.So more to improve
The yield of crystal silicon unit time improves the surface area of initial silicon core assembly, the yield of polysilicon not only can be improved, meanwhile, by
In the shortening in reaction time, production cost can also be greatly reduced.But use usually used solid circles silicon core or side
Shape silicon core, the application of large-diameter circular or rectangular silicon core, although the production cost of polysilicon can be significantly reduced, silicon core
The production cost is very high, and since the weight of silicon core increases, the increasing of the weight of silicon core causes silicon core weight in polysilicon product
In weight accounting it is increasing, seriously affect the purity of silicon materials.
So the technical staff of every country is being dedicated to researching and developing the big and light-weight polycrystalline silicon core of surface area more,
GTAT company of the U.S. is in its Patent No. 200780015406.5, and entitled " that improves in CVD reactor is more
Crystal silicon deposition " patent document in disclose traditional silicon core replaced by circular hollow silicone tube with a kind of cross section, thus
Yield is improved, the reaction time is shortened.But since hollow silicone tube drawing is very difficult, cost is also very high, does not also obtain extensive
Implement.
Chinese in Luoyang Jin Nuo mechanical engineering Co., Ltd is in its Patent No. 201610002833.0, a kind of entitled " sky
Heart component and its silicon core assembly " patent document in using more sheet silicon plate or silicon rod join end to end, to reach hollow silicon
Core, although single silicon plate or silicon rod are drawn or cutting difficulty is lower than the hollow silicone tube of U.S. GTAT company, it is overlapped to form sky
The silicon core assembly difficulty of the heart is larger, is not also implemented on a large scale equally.
Chinese Asia silicon industry (Qinghai) Co., Ltd is in its Patent No. 201710977922.1, a kind of entitled " reduction
Furnace silicon core and reduction furnace " patent document disclosed in using 4 sheet silicon plates and 1, center be provided with three or four have protrusion or
The circle silicon rod of groove is connected, to reach the cross silicon core of combination, but its overlapped that each silicon core is required to up to 1500-
4000mm silicon core carries out fluting processing from the beginning to the end, and the difficulty for forming component is larger, is not implemented on a large scale at present.
Utility model content
The purpose of this utility model is to provide a kind of cross silicon core assemblies of entirety, to solve in the prior art for more
Intensity existing for the silicon core assembly of crystal silicon CVD polycrystalline silicon reducing furnace is small, at high cost and the problem of be not easy to overlap joint and shove charge.
For this purpose, the utility model uses following technical scheme:
A kind of cross silicon core assembly of entirety comprising two vertical silicon cores of vertical direction parallel interval setting and one
Horizontally arranged silicon core crossbeam, the silicon core crossbeam are overlapped between the top of described two vertical silicon cores, are integrally formed
Inverse u shape structure, wherein the vertical silicon core and silicon core crossbeam are all made of whole silicon materials and cut, and cross section is
The both ends of " ten " font structure, the silicon core crossbeam are overlapped by clamping structure and the vertical silicon core.
Particularly, cooperating the bottom end of every vertical silicon core in setting on electrode for reduction furnace, there are four graphite clamping petals, a stone
Black internal screw thread tapered sleeve and a graphite external screw thread tapered sleeve, four graphite clamping petals are located in the graphite internal screw thread tapered sleeve, described perpendicular
It is vertical that graphite external screw thread tapered sleeve is directly tightened against graphite internal screw thread tapered sleeve internal locking in four graphite clamping petals of bottom end insertion of silicon core
The bottom end of silicon core.
Particularly, the inside of the graphite clamping petal includes two mutually perpendicular vertical planes, and lateral surface is up-small and down-big
Tapered surface, two adjacent sides of vertical silicon core are bonded with two vertical planes limits graphite clamping petal.
Particularly, the clamping structure includes crossbeam card slot and vertical silicon core card slot, and the crossbeam card slot is opened in described
On the both ends of silicon core crossbeam and two sides in horizontality, and the both ends of the bottom side of the silicon core crossbeam are cut
Fall the part wide with vertical silicon core, the groove width of the crossbeam card slot and the side thickness of vertical silicon core match, described vertical
Silicon core card slot is opened in the center of two corresponding sides on the vertical silicon core top, the top of the corresponding side of another two
End cuts away the part wide with silicon core crossbeam, the groove width and the side thickness phase of silicon core crossbeam of the vertical silicon core card slot
Match.
Particularly, 20~100mm of width range of the cross section of the silicon core crossbeam and vertical silicon core, 1~8mm of thickness it
Between, the length range of silicon core crossbeam is 100-500mm, and the length range of vertical silicon core is 1500-4000mm.
The beneficial effects of the utility model are that the cross silicon core assembly of the entirety is using whole compared with prior art
Cross silicon core made of body cutting, intensity is high, and shove charge is convenient, is not easily broken, the probability of falling furnace is small.The whole silicon being spliced
Core assembly is light-weight, and surface area is big, can significantly shorten the reaction time of reduction furnace, reduces the production cost of polysilicon, improves more
The purity of crystal silicon.
Detailed description of the invention
Fig. 1 is the schematic perspective view for the cross silicon core assembly of entirety that specific embodiment of the present invention provides；
Fig. 2 is the top of the vertical silicon core for the cross silicon core assembly of entirety that specific embodiment of the present invention provides
Side view；
Fig. 3 is looking up for the silicon core crossbeam for the cross silicon core assembly of entirety that specific embodiment of the present invention provides
Figure；
Fig. 4 is the stereochemical structure after the overlap joint for the cross silicon core assembly of entirety that specific embodiment of the present invention provides
Schematic diagram.
Specific embodiment
Further illustrate the technical solution of the utility model below with reference to the accompanying drawings and specific embodiments.
Shown in please referring to Fig.1 to Fig.4, it includes that vertical direction is flat that a kind of cross silicon core assembly of entirety is provided in the present embodiment
The two vertical silicon cores 1 and a horizontally arranged silicon core crossbeam 2, silicon core crossbeam 2 of row interval setting are overlapped in described two
Between the top of the vertical silicon core 1 of root, inverse u shape structure is integrally formed, vertical silicon core 1 and silicon core crossbeam 2 are all made of whole silicon
Material is cut, and cross section is " ten " font structure, i.e., cross section includes four sides, and the width and thickness of four sides
Spend it is all the same, between 20~100mm of width range of the cross section of silicon core crossbeam 2 and vertical silicon core 1,1~8mm of thickness, silicon core
The length range of crossbeam 2 is 100-500mm, and the length range of vertical silicon core 1 is 1500-4000mm.
The both ends of silicon core crossbeam 2 are overlapped by clamping structure with the vertical silicon core 1, and clamping structure includes crossbeam card
Slot 3 and vertical silicon core card slot 4, crossbeam card slot 3 are opened in the both ends of the silicon core crossbeam 2 and are in two sides of horizontality
On 5, the both ends of the bottom side 6 of silicon core crossbeam 2 cut away the part wide with vertical silicon core 1, the groove width of crossbeam card slot 3 with
The side thickness of vertical silicon core 1 matches, and vertical silicon core card slot 4 is opened in two corresponding sides on vertical 1 top of silicon core
The center on side, the top of the corresponding side of another two cut away the part wide with silicon core crossbeam 2 and with vertical silicon core card
The slot bottom of slot 4 flushes, and the groove width of vertical silicon core card slot 4 and the side thickness of silicon core crossbeam 2 match.By silicon core crossbeam 2 from perpendicular
The top of straight silicon core 1 is downwardly into along the notch of vertical silicon core card slot 4 to flushing, and vertical 4 liang of silicon core card slot of vertical silicon core 1
Two sides of side are through and out crossbeam card slot 3.
Cooperating the bottom end of every vertical silicon core 1 in setting on electrode for reduction furnace, there are four spiral shells in 7, graphite of graphite clamping petal
Line tapered sleeve 8 and a graphite external screw thread tapered sleeve 9, four graphite clamping petals 7 are located in the graphite internal screw thread tapered sleeve 8, vertical silicon core 1
Bottom end be inserted into four graphite clamping petals 7 graphite external screw thread tapered sleeve 9 be tightened against the vertical silicon core of 8 internal locking of graphite internal screw thread tapered sleeve
1 bottom end.The inside of graphite clamping petal 7 includes two mutually perpendicular vertical planes 70, and lateral surface is up-small and down-big tapered surface 71,
Two adjacent sides of vertical silicon core 1 are bonded with two vertical planes 70 limits graphite clamping petal 7.
The procedure of processing of silicon core crossbeam 2 are as follows: be first cut into the length of the whole cross silicon core of well cutting as required
The both ends of silicon core crossbeam a line therein are cut away the part wide with vertical silicon core, finally by silicon by silicon core crossbeam
The both ends diamond forming emery wheel cuts of corresponding two sides go out four rectangular crossbeam card slots 3 on core crossbeam.Vertically
The procedure of processing of silicon core 1 are as follows: the length of the whole cross silicon core of well cutting as required is first cut into vertical silicon core, then is used
Diamond forming is finally used in two right angles of wherein a line cutting of vertical silicon core one end by diamond blade or diamond fretsaw
Emery wheel cuts go out rectangular vertical silicon core card slot 4.
The above-mentioned cross silicon core assembly of entirety is in specific overlap joint, comprising the following steps:
1) lower part of two vertical vertical silicon cores 1 is inserted into the graphite clamping petal 7 on electrode for reduction furnace, the side of adjusting
To elder generation does not lock；
2) silicon core crossbeam 2 is downwardly into along notch to flushing from the top of vertical silicon core 1, makes to be located at vertical silicon core card
Two sides of 4 two sides of slot are inserted into the crossbeam card slot 3, while a side of silicon core crossbeam 2 is inserted into vertical silicon core card slot 4
It is interior；
3) the graphite internal screw thread tapered sleeve 8 for rotating vertical 1 bottom of silicon core locks graphite clamping petal 7, and overlap joint can be completed.
Above embodiments only elaborate the basic principles and features of the present invention, and the utility model is not by above-mentioned example
Limitation, on the premise of not departing from the spirit and scope of the utility model, the present invention has various changes and changes, these changes
Change and change is fallen within the scope of the claimed invention.The utility model requires protection scope is wanted by appended right
Ask book and its equivalent thereof.
Claims (5)
1. a kind of cross silicon core assembly of entirety comprising the two vertical silicon cores and a water of vertical direction parallel interval setting
Square to setting silicon core crossbeam, the silicon core crossbeam is overlapped between the top of described two vertical silicon cores, is integrally formed down
U-typed structure, which is characterized in that the vertical silicon core and silicon core crossbeam are all made of whole silicon materials and cut, and transversal
Face is " ten " font structure, and the both ends of the silicon core crossbeam are overlapped by clamping structure and the vertical silicon core.
2. the cross silicon core assembly of entirety according to claim 1, which is characterized in that the bottom end of every vertical silicon core of cooperation
In setting is there are four graphite clamping petal, a graphite internal screw thread tapered sleeve and a graphite external screw thread tapered sleeve on electrode for reduction furnace, four
Graphite clamping petal is located in the graphite internal screw thread tapered sleeve, and the bottom end of the vertical silicon core is inserted into will be outside graphite in four graphite clamping petals
Thread conical cover screwing is in the bottom end of the vertical silicon core of graphite internal screw thread tapered sleeve internal locking.
3. the cross silicon core assembly of entirety according to claim 2, which is characterized in that the inside of the graphite clamping petal includes
Two mutually perpendicular vertical planes, lateral surface are up-small and down-big tapered surface, and two adjacent sides of vertical silicon core are perpendicular with two
Fitting is faced directly to limit graphite clamping petal.
4. the cross silicon core assembly of entirety according to claim 1-3, which is characterized in that the clamping structure packet
Crossbeam card slot and vertical silicon core card slot are included, the crossbeam card slot is opened in the both ends of the silicon core crossbeam and is in horizontality
On two sides, and the both ends of the bottom side of the silicon core crossbeam cut away the part wide with vertical silicon core, the cross
The groove width of beam card slot and the side thickness of vertical silicon core match, and the vertical silicon core card slot is opened in the vertical silicon core top
Two corresponding sides center, the top of the corresponding side of another two cuts away the part wide with silicon core crossbeam,
The groove width of the vertical silicon core card slot and the side thickness of silicon core crossbeam match.
5. the cross silicon core assembly of entirety according to claim 1, which is characterized in that the silicon core crossbeam and vertical silicon core
Cross section 20~100mm of width range, between 1~8mm of thickness, the length range of silicon core crossbeam is 100-500mm, vertically
The length range of silicon core is 1500-4000mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821020699.8U CN208485605U (en) | 2018-06-28 | 2018-06-28 | A kind of cross silicon core assembly of entirety |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821020699.8U CN208485605U (en) | 2018-06-28 | 2018-06-28 | A kind of cross silicon core assembly of entirety |
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| CN208485605U true CN208485605U (en) | 2019-02-12 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108545746A (en) * | 2018-06-28 | 2018-09-18 | 江阴兰雷新能源科技有限公司 | A kind of cross silicon core assembly of entirety and its bridging method |
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2018
- 2018-06-28 CN CN201821020699.8U patent/CN208485605U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108545746A (en) * | 2018-06-28 | 2018-09-18 | 江阴兰雷新能源科技有限公司 | A kind of cross silicon core assembly of entirety and its bridging method |
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