CN108545747A - A kind of plug-in silicon core assembly - Google Patents
A kind of plug-in silicon core assembly Download PDFInfo
- Publication number
- CN108545747A CN108545747A CN201810685416.XA CN201810685416A CN108545747A CN 108545747 A CN108545747 A CN 108545747A CN 201810685416 A CN201810685416 A CN 201810685416A CN 108545747 A CN108545747 A CN 108545747A
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- Prior art keywords
- silicon core
- silicon
- vertical
- crossbeam
- graphite
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 140
- 239000000178 monomer Substances 0.000 claims abstract description 20
- 239000002210 silicon-based material Substances 0.000 claims abstract description 10
- 238000005520 cutting process Methods 0.000 claims abstract description 9
- 238000005452 bending Methods 0.000 claims abstract description 8
- 238000000429 assembly Methods 0.000 claims abstract description 3
- 230000000712 assembly Effects 0.000 claims abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 50
- 229910002804 graphite Inorganic materials 0.000 claims description 49
- 239000010439 graphite Substances 0.000 claims description 49
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims 2
- 239000006232 furnace black Substances 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 16
- 229920005591 polysilicon Polymers 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000006722 reduction reaction Methods 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- -1 improved Siemens Chemical compound 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention discloses a kind of plug-in silicon core assemblies, it includes the two vertical silicon cores and a horizontally arranged silicon core crossbeam of vertical direction parallel interval setting, the silicon core crossbeam is overlapped between the top of described two vertical silicon cores, inverse u shape structure is integrally formed, the silicon core crossbeam uses that whole silicon materials cutting forms and " ten " font structure is in its cross section, the vertical silicon core includes two silicon core monomers of separate structure, the silicon core monomer uses that whole silicon materials cutting forms and " ∟ is in its cross section " type structure, and it is spaced apart and sets there are two card slot on the side of bottom on the silicon core crossbeam, the bending part of two silicon core monomers is caught in card slot and connects vertical silicon core with silicon core crossbeam.Above-mentioned plug-in silicon core assembly intensity is high, and shove charge is convenient, is not easily broken, the probability of falling stove is small.Whole silicon core assembly made of clamping is light-weight, and surface area is big, and difficulty of processing is small and at low cost.
Description
Technical field
The invention belongs to polycrystalline silicon raw material processing technologies, more particularly, to a kind of plug-in silicon core assembly.
Background technology
Due to the fast development of photovoltaic industry, the demand growth of high-purity polycrystalline silicon raw material is swift and violent, and production is more both at home and abroad at present
The technique of crystal silicon raw material is all largely the hydrogen reduction of trichlorosilane, i.e. improved Siemens, improved Siemens or other classes
The capital equipment that major diameter polysilicon is produced like method is polycrystalline silicon reducing furnace, by three circles first in polycrystalline silicon reducing furnace
Or rectangular silicon core is overlapped to form inverted U, is electrified on elongated silicon core, keeps the heating of silicon core rubescent, until surface temperature reaches
To 1050-1100 degrees Celsius, it is passed through high-purity trichlorosilane and hydrogen, makes it that hydrogen reduction reaction occur at high temperature, makes trichlorine
Silicon packing of molecules in hydrogen silicon makes its diameter constantly increase on silicon core, in general, the diameter of silicon core is at 7-15 millimeters, it can
It can also be square or other shapes to be circle, so that diameter is constantly increased to 120-200 eventually by hydrogen reduction reaction
Millimeter, produces the polycrystalline silicon raw material stick of high-purity solar level 6N or electron level 11N, recycles CZ czochralski crystal growing furnaces to draw after being crushed
Monocrystal rod is made, or polysilicon silicon ingot is cast using polycrystalline silicon ingot or purifying furnace.
The preparation method of existing silicon core has two kinds, and traditional method is to use CZ methods (melting czochralski method in area), low production efficiency, electric power
Consumption is big, and equipment investment is big.Another kind is to use diamond tool patterning method, using the numerical-control polysilicon silicon for using diamond fretsaw
Multiline cutting machine or similar devices are used for the preparation of silicon core.Finer wire line by using the upper diamond particle of plating exists
It is moved back and forth at high speed on workpiece to be machined or unidirectional mobile, diameter 100-300mm silicon rods is pressed in the lathe diamond wire
On the rectangular gauze for intersecting composition, to which the silicon rod to be cut into elongated rectangular silicon core, power consumption is small, high in machining efficiency.
This inverted U for polysilicon CVD polycrystalline silicon reducing furnaces overlapped silicon core assembly is usually referred to as " silicon core
Component ".The prior art is when overlapping silicon core assembly, the round silicon core of usually used a diameter of 8-10mm, or use 7*7~
The rectangular silicon core of 15*15mm.During CVD reduction reactions, the silicon materials for reacting generation are constantly deposited on silicon wicking surface, silicon core
Surface area can be increasing, reaction gas can also increase the collision opportunity and quantity of silicon wicking surface therewith.Work as unit area
Deposition rate it is constant when, silicon wicking surface product it is bigger, the unit interval production polysilicon weight it is also more.So more to improve
The yield of crystal silicon unit interval improves the surface area of initial silicon core assembly, can not only improve the yield of polysilicon, meanwhile, by
In the shortening in reaction time, production cost can also be greatly reduced.But use usually used solid circles silicon core or side
Shape silicon core, the application of large-diameter circular or rectangular silicon core, although the production cost of polysilicon can be significantly reduced, silicon core
The production cost is very high, and since the weight of silicon core increases, the increasing of the weight of silicon core causes silicon core weight in polysilicon product
In weight accounting it is increasing, seriously affect the purity of silicon materials.
So the technical staff of every country is being dedicated to researching and developing the big and light-weight polycrystalline silicon core of surface area more,
But the disadvantage that silicon core assembly generally existing difficulty of processing in the prior art is big and of high cost.
Invention content
The purpose of the present invention is to provide a kind of plug-in silicon core assemblies, to solve existing for silicon core assembly in the prior art
The big and of high cost problem of difficulty of processing.
For this purpose, the present invention uses following technical scheme：
A kind of plug-in silicon core assembly comprising the two vertical silicon cores and a level of vertical direction parallel interval setting
The silicon core crossbeam of direction setting, the silicon core crossbeam are overlapped between the top of described two vertical silicon cores, and inverted " u " is integrally formed
Type structure, wherein the silicon core crossbeam uses that whole silicon materials cutting forms and " ten " font structure is in its cross section, including
Mutually perpendicular four sides, the vertical silicon core include two silicon core monomers of separate structure, and the silicon core monomer is using whole
The silicon materials cutting of body forms and its cross section Wei " ∟ " type structure, including mutually perpendicular two sides, and the silicon core is horizontal
It is spaced apart and sets there are two card slot on the side of bottom on beam, the bending part of two silicon core monomers is caught in vertical silicon in card slot
Core is connected with silicon core crossbeam.
Particularly, described two card slots are using the center of the side as symmetric points symmetry arrangement.
Particularly, the side wall of described two card slots is the straight of the vertical bending part setting of two sides of cooperation silicon core monomer
Corner structure.
Particularly, the outer right angle alignment of the bending part of the two silicon core monomer becomes placed against, and it is in " ten " word to be formed whole
The structure of type, in setting on electrode for reduction furnace, there are four spiral shells in graphite clamping petal, a graphite for the bottom end of every vertical silicon core of cooperation
Line tapered sleeve and a graphite external screw thread tapered sleeve, four graphite clamping petals are located in the graphite internal thread tapered sleeve, two silicon core monomers
Alignment and its bottom end are inserted into four graphite clamping petals that graphite external screw thread tapered sleeve is tightened against graphite internal thread tapered sleeve internal locking is vertical
The bottom end of silicon core.
Particularly, the inside of the graphite clamping petal includes two mutually perpendicular vertical planes, and lateral surface is up-small and down-big
Taper surface, two adjacent sides of the vertical silicon core are bonded with two vertical planes limits graphite clamping petal.
Particularly, four graphite clamping petals include two big graphite clamping petal and two small graphite clamping petals, the great Shi
The size of black card valve is more than the size of two small graphite clamping petals, and two big graphite clamping petal is diagonally positioned, two small graphite clampings
Valve is diagonally positioned.
Particularly, 20~100mm of width range of the cross section of the silicon core crossbeam and vertical silicon core, 1~8mm of thickness it
Between, the length range of silicon core crossbeam is 100-500mm, and the length range of vertical silicon core is 1500-4000mm.
Beneficial effects of the present invention are, compared with prior art the plug-in silicon core assembly using integral cutting and
At intensity is high, and shove charge is convenient, is not easily broken, the probability of falling stove is small.Whole silicon core assembly made of clamping is light-weight, surface
Product is big, and difficulty of processing is small and at low cost.
Description of the drawings
Fig. 1 is the explosive view for the plug-in silicon core assembly that the specific embodiment of the invention provides；
Fig. 2 is the assembling schematic diagram for the plug-in silicon core assembly that the specific embodiment of the invention provides；
Fig. 3 is the front view for the plug-in silicon core assembly that the specific embodiment of the invention provides；
Fig. 4 is the sectional view at A-A in Fig. 3.
Specific implementation mode
Technical solution to further illustrate the present invention below with reference to the accompanying drawings and specific embodiments.
Shown in please referring to Fig.1 to Fig.4, it includes parallel of vertical direction that a kind of plug-in silicon core assembly is provided in the present embodiment
It is overlapped in two vertical silicon every the two vertical silicon cores 1 and a horizontally arranged silicon core crossbeam 2, silicon core crossbeam 2 of setting
Between the top of core 1, it is integrally formed inverse u shape structure, the width range 20 of the cross section of silicon core crossbeam 2 and vertical silicon core 1~
Between 100mm, 1~8mm of thickness, the length range of silicon core crossbeam 2 is 100-500mm, and the length range of vertical silicon core 1 is
1500-4000mm。
Silicon core crossbeam 2 uses that whole silicon materials cutting forms and " ten " font structure is in its cross section, including hangs down mutually
Four straight sides, the width and thickness all same of four sides are located on the side of bottom with its center on silicon core crossbeam 2
Offer two card slots 3 for symmetrical point symmetry, card slot 3 to open up depth equal with the width of the side.
Vertical silicon core 1 includes two silicon core monomers 4 of separate structure, silicon core monomer 4 cut using whole silicon materials and
At and its cross section Wei " ∟ " type structure, including mutually perpendicular two sides, the width and thickness all same of two side,
The outer right angle alignment of the bending part of two silicon core monomers 4, which is adjacent to be caught in card slot 3, connects vertical silicon core 1 and silicon core crossbeam 2, i.e.,
Two silicon core monomers 4 are in setting back-to-back, and the outer right-angle side alignment of the two sticks together, final two insertions card slot 3
Silicon core monomer 4 forms the whole structure in " ten " font.
In order to improve the reliability that vertical silicon core 1 and silicon core crossbeam 2 are clamped, the side wall of two card slots 3 is cooperation
The right-angle structure of the joint setting of the two neighboring side of vertical silicon core 1, can make two sides adjacents of vertical silicon core 1 in this way
The root on side is fitted closely with card slot 3.
Coordinating the bottom end of every vertical silicon core 1, there are four spiral shells in graphite clamping petal, a graphite in setting on electrode for reduction furnace
Line tapered sleeve 5 and a graphite external screw thread tapered sleeve 6, four graphite clamping petals include two big graphite clamping petal 7 and two small graphite clampings
Valve 8, the size of the big graphite clamping petal 7 is more than the size of two small graphite clamping petals 8, and two big graphite clamping petal 7 is in diagonally to set
It sets, two small graphite clamping petals 8 are diagonally positioned.Four graphite clamping petals are located in the graphite internal thread tapered sleeve 5, vertical silicon core 1
Bottom end be inserted into four graphite clamping petals graphite external screw thread tapered sleeve 6 be tightened against the vertical silicon core of 5 internal locking of graphite internal thread tapered sleeve 1
Bottom end.The inside of big graphite clamping petal 7 and two small graphite clamping petals 8 includes two mutually perpendicular vertical planes 9, and lateral surface is
Up-small and down-big taper surface 10, two adjacent sides of vertical silicon core 1 are bonded with two vertical planes 9 limits graphite clamping petal
Position.
The clamping structure of above-mentioned plug-in silicon core assembly is relatively easy, under the premise of ensureing connection reliability, reduces
Difficulty of processing and processing cost.
Above example is to elaborate that the basic principle and characteristic of the present invention, the present invention are not limited by above-mentioned example,
Without departing from the spirit and scope, the present invention also has various changes, these changes and modifications are both fallen within
In scope of the claimed invention.The scope of the present invention is defined by the appended claims and its equivalents.
Claims (7)
1. a kind of plug-in silicon core assembly comprising two vertical silicon cores of vertical direction parallel interval setting and a level side
To the silicon core crossbeam of setting, the silicon core crossbeam is overlapped between the top of described two vertical silicon cores, and inverse u shape is integrally formed
Structure, which is characterized in that the silicon core crossbeam uses that whole silicon materials cutting forms and " ten " font structure is in its cross section,
Including mutually perpendicular four sides, the vertical silicon core includes two silicon core monomers of separate structure, and the silicon core monomer is adopted
Formed with whole silicon materials cutting and its cross section Wei " ∟ " type structure, including mutually perpendicular two sides, and the silicon
It is spaced apart and sets there are two card slot on the side of bottom on core crossbeam, the bending part of two silicon core monomers is caught in card slot and will erect
Straight silicon core is connected with silicon core crossbeam.
2. plug-in silicon core assembly according to claim 1, which is characterized in that described two card slots are with the center of the side
For symmetric points symmetry arrangement.
3. plug-in silicon core assembly according to claim 1, which is characterized in that the side wall of described two card slots is cooperation
The right-angle structure of the vertical bending part setting of two sides of silicon core monomer.
4. according to claim 1-3 any one of them plug-in silicon core assemblies, which is characterized in that the two silicon core monomer
The outer right angle alignment of bending part becomes placed against, formed it is whole be in " ten " font structure, coordinate the bottom end of every vertical silicon core in
There are four graphite clamping petal, a graphite internal thread tapered sleeve and a graphite external screw thread tapered sleeve, four stones for setting on electrode for reduction furnace
Black card valve is located in the graphite internal thread tapered sleeve, by stone in four graphite clamping petals of two silicon core monomer alignment and the insertion of its bottom end
Black external screw thread tapered sleeve is tightened against the bottom end of the vertical silicon core of graphite internal thread tapered sleeve internal locking.
5. plug-in silicon core assembly according to claim 4, which is characterized in that the inside of the graphite clamping petal includes two
Mutually perpendicular vertical plane, lateral surface are up-small and down-big taper surface, and two adjacent sides of the vertical silicon core are perpendicular with two
Fitting is faced directly to limit graphite clamping petal.
6. plug-in silicon core assembly according to claim 4, which is characterized in that four graphite clamping petals include two
Big graphite clamping petal and two small graphite clamping petals, the size of the big graphite clamping petal are more than the size of two small graphite clamping petals, and two
A big graphite clamping petal is diagonally positioned, and two small graphite clamping petals are diagonally positioned.
7. plug-in silicon core assembly according to claim 1, which is characterized in that the cross of the silicon core crossbeam and vertical silicon core
Between the 20~100mm of width range in section, 1~8mm of thickness, the length range of silicon core crossbeam is 100-500mm, vertical silicon core
Length range be 1500-4000mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810685416.XA CN108545747A (en) | 2018-06-28 | 2018-06-28 | A kind of plug-in silicon core assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810685416.XA CN108545747A (en) | 2018-06-28 | 2018-06-28 | A kind of plug-in silicon core assembly |
Publications (1)
| Publication Number | Publication Date |
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| CN108545747A true CN108545747A (en) | 2018-09-18 |
Family
ID=63493127
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810685416.XA Pending CN108545747A (en) | 2018-06-28 | 2018-06-28 | A kind of plug-in silicon core assembly |
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| Country | Link |
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| CN (1) | CN108545747A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110791806A (en) * | 2019-12-04 | 2020-02-14 | 亚洲硅业(青海)股份有限公司 | Method and device for connecting silicon cores |
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2018
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| CN110791806A (en) * | 2019-12-04 | 2020-02-14 | 亚洲硅业(青海)股份有限公司 | Method and device for connecting silicon cores |
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