CN209243242U - A kind of single crystal growing furnace with side feeding device - Google Patents
A kind of single crystal growing furnace with side feeding device Download PDFInfo
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- CN209243242U CN209243242U CN201822126509.7U CN201822126509U CN209243242U CN 209243242 U CN209243242 U CN 209243242U CN 201822126509 U CN201822126509 U CN 201822126509U CN 209243242 U CN209243242 U CN 209243242U
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- feeding device
- conveying pipeline
- side feeding
- single crystal
- furnace body
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Abstract
The utility model relates to a kind of single crystal growing furnaces with side feeding device comprising furnace body, set on the intracorporal guide shell of the furnace, the silica crucible below the guide shell and the side feeding device on the furnace body；The side feeding device includes the charging connector and vibration material delivering device on the furnace body, the charging connector is set to the furnace body side, the vibration material delivering device includes horizontally disposed conveying pipeline, and the discharge port of the conveying pipeline is located above the silica crucible after passing through the charging connector.
Description
Technical field
The utility model relates to a kind of single crystal growing furnaces with side feeding device, particularly belong to monocrystalline silicon production technical field.
Background technique
Silicon materials can be divided into monocrystalline silicon, polysilicon and amorphous silicon according to crystal structure.Single crystal silicon material refers to that silicon atom exists
The regular periodically uninterrupted arrangement of three-dimensional space, forms a complete crystalline material, what material properties embodied be it is each to
The opposite sex, i.e., various properties all have differences in different crystallographic directions.Polycrystalline silicon material then refers to by more than two sizes not
The silicon materials of same monocrystalline silicon composition, what its material properties embodied is isotropism.Amorphous silicon material refers to silicon atom short
Apart from interior ordered arrangement, silicon materials disorderly arranged in long range, the property of material show isotropism.For polycrystalline
For silicon, when the elemental silicon of melting solidifies under the conditions of supercooling, silicon atom with diamond lattice morphologic arrangement at many nucleus, such as
These nucleus of fruit grow up to the different crystal grain of high preferred orientation, then these crystal grain combine, and crystallize into polysilicon.If the simple substance of melting
For silicon in solidification, silicon atom is arranged in many nucleus with diamond lattice, if these nucleus grow up to the identical crystalline substance of high preferred orientation
Grain, then these crystal grain combine in parallel just crystallizes into monocrystalline silicon.Monocrystalline silicon has metalloid physical property, there is weaker lead
Electrically, conductivity increases with increasing temperature, and has significant semiconduction.Ultrapure monocrystalline silicon is intrinsic semiconductor.
The method of currently manufactured monocrystalline silicon mainly has vertical pulling method, magnetic field Czochralski method, zone-melting process and double crucible crystal pulling methods.It is single
Brilliant furnace is one kind in protective gas (based on nitrogen, helium) environment, melts the polycrystalline materials such as polysilicon with heater, uses
The equipment of Grown by CZ Method dislocation-free monocrystalline.Single crystal growing furnace is widely used in the silicon single crystal rod manufacture of solar energy power generating and partly leads list
The manufacture of crystalline silicon rod.Solar energy power generating is the generally acknowledged clean energy resource in the whole world, it is inexhaustible, is the mankind
The ideal energy needed for development, countries in the world are all being greatly developed.But development is limited by two bottlenecks, first is that restricted
In the photoelectric conversion efficiency of material, second is that solar photovoltaic electrification component manufacturing cost is higher, especially required for manufacture early period
The energy of consumption is relatively high, therefore overall applicability and spreading speed are unhappy.In terms of photoelectric conversion efficiency, although having in recent years
The cost of certain raising, unit component also has decline, has pushed the development of photovoltaic industry.But since transfer efficiency has limit limit
System, room for promotion is more and more narrow, and follow-up developments space is seldom, so that the factor of transfer efficiency is to subsequent fast-developing photovoltaic power generation
Kinetic energy it is smaller and smaller.
The improvement for reducing the energy consumption of manufacture monocrystalline silicon at present is carried out mainly around two aspects, first is that changing the side to feed intake
Blowing out is also fed intake and changes into not blowing out and feed intake by formula.Second is that changing pulling monocrystal silicon rod method, namely list is drawn by the method for fractional steps
Crystalline silicon rod changes into continuity method pulling monocrystal silicon rod.
The prior art, Chinese patent literature CN108103568A, using inclined-plane feed way at bell.This charging
Mode has the disadvantage in that 1, charge pipe bending is more, and silicon material accumulation is be easy to cause to get stuck；2, silicon material passes through inclination from feeder
Expects pipe slides into quartz crucible, and blanking height is high, and silicon material speed is fast, impacts greatly to liquid level, be easy to cause splashing of silicon liquid and liquid fluctuating；
3, blanking is not isolated with crystal pulling region, and fluctuation caused by blanking directly affects crystal pulling quality.The utility model is lacked for above-mentioned
Point is overcome, and provides that a kind of structure is simple, do not get stuck, blanking impact is small, crystal pulling region liquid level smoothly adds band side
Expect the single crystal growing furnace of device.
Utility model content
The technical problem to be solved by the utility model is to provide a kind of structures simply, do not get stuck, blanking impacts small, crystal pulling
Single crystal growing furnace of the region liquid level smoothly with side feeding device.
To solve the above problems, technical solution adopted in the utility model is:
A kind of single crystal growing furnace with side feeding device comprising furnace body is set to the intracorporal guide shell of the furnace, set on described
Silica crucible below guide shell and the side feeding device on the furnace body；The side feeding device includes being set to institute
The charging connector and vibration material delivering device on furnace body are stated, the charging connector is set to the furnace body side, and the vibration is defeated
Material device includes horizontally disposed conveying pipeline, and the discharge port of the conveying pipeline is located at the quartz after passing through the charging connector
Above crucible.
Quartz tube is equipped in the silica crucible as a further improvement of the utility model, the quartz tube lower part is set
There is communication port.
The discharge port of the conveying pipeline is located at the silica crucible and quartz tube as a further improvement of the utility model,
Between region position directly above.
The charging connector passes through bellows phase with vibration material delivering device as a further improvement of the utility model,
Even, the bellows-sheathed is set on the outside of the conveying pipeline.
The vibration material delivering device further includes the vibration on the conveying pipeline as a further improvement of the utility model,
Dynamic device, for realizing the horizontal feed of material in the conveying pipeline.
The beneficial effects of adopting the technical scheme are that
A kind of single crystal growing furnace with side feeding device provided by the utility model, conveying pipeline is horizontally disposed, passes through vibration
Feeding device carries out straight feeding, and there is no the phenomenons that gets stuck；Silicon material falls into liquid by the discharge port of conveying pipeline after horizontal feed
Face, blanking initial position is low apart from liquid level, caused by impact it is small；Silicon material blanking region and crystal bar crystal pulling region are by quartz tube
It is isolated, liquid level is steady at crystal pulling region, is not influenced by blanking region liquid fluctuating.
Detailed description of the invention
It, below will be right in order to illustrate more clearly of specific embodiment of the present invention or technical solution in the prior art
Specific embodiment or attached drawing needed to be used in the description of the prior art are briefly described, it should be apparent that, it is described below
In attached drawing be that some embodiments of the utility model are not paying creativeness for those of ordinary skill in the art
Under the premise of labour, it can also be obtained according to these attached drawings other attached drawings.
Fig. 1 is the structural schematic diagram of the utility model.
Fig. 2 is the partial enlargement diagram in Fig. 1 at A.
Wherein: 1 furnace body, 2 silica crucibles, 3 guide shells, 4 quartz tubes, 5 communication ports, 6 charging connectors, 7 bellowss, 8 defeated
Expects pipe, 81 discharge ports, 9 vibration material delivering devices, 10 crystal bars.
Specific embodiment
To keep the purpose of this utility model, technical solution and advantage clearer, in the following with reference to the drawings and specific embodiments
Clear, complete description is carried out to utility model.
A kind of single crystal growing furnace with side feeding device as shown in Figs. 1-2 comprising furnace body 1, in the furnace body 1
Guide shell 3, the silica crucible 2 set on 3 lower section of guide shell and the side feeding device on the furnace body 1.The side
Square feeding device includes the charging connector 6 and vibration material delivering device 9 on the furnace body 1, and the charging connector 6 is set to
1 side of furnace body, the vibration material delivering device 9 include horizontally disposed conveying pipeline 8, and the discharge port 81 of the conveying pipeline 8 is worn
It is located at 2 top of silica crucible after crossing the charging connector 6.In the present embodiment, the vibration material delivering device 9 further includes setting
Vibrator on the conveying pipeline 8, for realizing the horizontal feed of material in the conveying pipeline 8.Pass through the vibration material delivering
Device 9 carries out straight feeding, and there is no the phenomenons that gets stuck；Silicon material is fallen after horizontal feed by the discharge port 81 of the conveying pipeline 8
Enter liquid level, blanking initial position is low apart from liquid level, caused by impact it is small.
Quartz tube 4 is equipped in the silica crucible 2,4 lower part of quartz tube is equipped with communication port 5.The conveying pipeline 8 goes out
The position directly above in the region between the silica crucible 2 and quartz tube 4 of material mouth 81.Liquid level area in the quartz tube 4
Domain carries out crystal pulling, forms crystal pulling region, and the meniscus region between the silica crucible 2 and quartz tube 4 carries out blanking, and formation is fallen
Expect region.When blanking region carries out blanking, splashing of silicon liquid and liquid fluctuating will not impact crystal pulling region, improve drawing
Crystalloid amount.
The charging connector 6 is connected with vibration material delivering device 9 by bellows 7, and the bellows 7 is sheathed on described defeated
8 outside of expects pipe.The bellows 7 is hose, for being sealed to the charging connector 6, good dustproof effect, and avoid
The vibration of the vibration material delivering device 9 is passed into monocrystalline furnace body.
Specific embodiment:
It during crystal pulling, is fed by the feed opening of the side feeding device, silicon material enters the vibration material delivering
After the conveying pipeline 8 of device 9, along 8 horizontal movement of conveying pipeline under the action of vibrator, move at the discharge port 81
Afterwards, fall into the blanking region between the silica crucible 2 and quartz tube 4, due to the blanking region and the quartz tube 4 it
Between be equipped with communication port 5, silicon liquid after fusing is by the communication port 5 entrance quartz tube 4, at the same time in the quartz
Crystal pulling operation is carried out in cylinder 4.
Finally, it should be noted that above embodiments are only to illustrate the technical solution of the utility model, rather than its limitations；
Although the utility model is described in detail with reference to the foregoing embodiments, those skilled in the art should understand that:
It can still modify to technical solution documented by previous embodiment, or be equal to part of technical characteristic
Replacement；And these are modified or replaceed, the utility model embodiment technical solution that it does not separate the essence of the corresponding technical solution
Spirit and scope.
Claims (5)
1. a kind of single crystal growing furnace with side feeding device, which is characterized in that it includes furnace body (1), is set in the furnace body (1)
Guide shell (3), the silica crucible (2) being set to below the guide shell (3) and the side being set on the furnace body (1), which feed, to be filled
It sets；The side feeding device includes the charging connector (6) and vibration material delivering device (9) on the furnace body (1), described
Connector (6) are fed set on the furnace body (1) side, the vibration material delivering device (9) includes horizontally disposed conveying pipeline (8),
The discharge port (81) of the conveying pipeline (8) passes through the charging connector (6) and is located above the silica crucible (2) afterwards.
2. a kind of single crystal growing furnace with side feeding device according to claim 1, which is characterized in that the silica crucible
(2) quartz tube (4) are equipped in, quartz tube (4) lower part is equipped with communication port (5).
3. a kind of single crystal growing furnace with side feeding device according to claim 2, which is characterized in that the conveying pipeline (8)
Discharge port (81) region between the silica crucible (2) and quartz tube (4) position directly above.
4. a kind of single crystal growing furnace with side feeding device according to claim 1, which is characterized in that the charging connector
(6) it is connected with vibration material delivering device (9) by bellows (7), the bellows (7) is sheathed on the outside of the conveying pipeline (8).
5. a kind of single crystal growing furnace with side feeding device according to claim 1, which is characterized in that the vibration material delivering dress
Setting further includes the vibrator on the conveying pipeline (8), for realizing the horizontal feed of the conveying pipeline (8) interior material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822126509.7U CN209243242U (en) | 2018-12-18 | 2018-12-18 | A kind of single crystal growing furnace with side feeding device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822126509.7U CN209243242U (en) | 2018-12-18 | 2018-12-18 | A kind of single crystal growing furnace with side feeding device |
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| Publication Number | Publication Date |
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| CN209243242U true CN209243242U (en) | 2019-08-13 |
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| CN201822126509.7U Active CN209243242U (en) | 2018-12-18 | 2018-12-18 | A kind of single crystal growing furnace with side feeding device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111074336A (en) * | 2019-12-30 | 2020-04-28 | 北京京运通科技股份有限公司 | Single crystal feeding device and feeding method |
| CN112048758A (en) * | 2020-09-17 | 2020-12-08 | 乐山新天源太阳能科技有限公司 | Continuous Czochralski single crystal rod process |
| CN113337884A (en) * | 2020-03-03 | 2021-09-03 | 隆基绿能科技股份有限公司 | Single crystal furnace charging system |
-
2018
- 2018-12-18 CN CN201822126509.7U patent/CN209243242U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111074336A (en) * | 2019-12-30 | 2020-04-28 | 北京京运通科技股份有限公司 | Single crystal feeding device and feeding method |
| CN113337884A (en) * | 2020-03-03 | 2021-09-03 | 隆基绿能科技股份有限公司 | Single crystal furnace charging system |
| CN112048758A (en) * | 2020-09-17 | 2020-12-08 | 乐山新天源太阳能科技有限公司 | Continuous Czochralski single crystal rod process |
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Effective date of registration: 20230518 Address after: 214181 Standard Workshop 2, Runzhou Road, Wuxi Huishan Industrial Transformation Cluster District, Wuxi City, Jiangsu Province Patentee after: Jing'ao (Wuxi) Photovoltaic Technology Co.,Ltd. Address before: 055550 Jinglong third industrial park, Jinglong street, Ningjin County, Xingtai City, Hebei Province Patentee before: HEBEI JING-LONG SUN EQUIPMENT Co.,Ltd. |
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