CN102569532A - Secondary deposition and dispersion process for selective emitter battery - Google Patents
Secondary deposition and dispersion process for selective emitter battery Download PDFInfo
- Publication number
- CN102569532A CN102569532A CN2012100585340A CN201210058534A CN102569532A CN 102569532 A CN102569532 A CN 102569532A CN 2012100585340 A CN2012100585340 A CN 2012100585340A CN 201210058534 A CN201210058534 A CN 201210058534A CN 102569532 A CN102569532 A CN 102569532A
- Authority
- CN
- China
- Prior art keywords
- phosphorus source
- deposition
- silicon solar
- crystal silicon
- preset temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention provides a secondary deposition and dispersion process for a selective emitter battery. The secondary deposition and dispersion process is used for performing phosphorus source deposition on the surface of a crystalline silicon solar cell silicon slice, and comprises the following steps of: putting the crystalline silicon solar cell silicon slice into a first preset-temperature environment, and feeding a phosphorus source and oxygen until the phosphorus source is deposited to preset concentration, or putting the crystalline silicon solar cell silicon slice into a third preset-temperature environment, feeding the phosphorus source and the oxygen, and pushing the phosphorus source at first preset temperature until the phosphorus source is deposited to the preset concentration; and when the phosphorus source is deposited to the preset concentration, reducing the temperature to second preset temperature, continuing to feed the phosphorus source and the oxygen so as to perform phosphorus source deposition, and performing laser doping to obtain a crystalline silicon solar cell subjected to secondary deposition. After temperature reduction is performed, the phosphorus source and the oxygen are continued to be fed, so that the phosphorus source continues to be deposited on the surface of the silicon slice, and the concentration of the phosphorus source on the surface of the silicon slice is increased; a laser doping process is performed on the crystalline silicon solar cell silicon slice at relatively high phosphorus source concentration, so that relatively low laser energy can be adopted; and the required crystalline silicon solar cell can be obtained.
Description
Technical field
The present invention relates to the solar cell preparing technical field, more particularly, relate to a kind of selective emitter battery secondary deposition diffusion technology.
Background technology
Crystalline silicon is optimal solar cell material, and crystal silicon solar energy battery occupies the share in photovoltaic market 90%.The conversion efficiency of crystal silicon solar energy battery is the key factor that influences its development.
On crystalline silicon, realizing selective emitting electrode structure, is one of crystal silicon solar energy battery method of raising the efficiency.Crystal silicon solar energy battery with selective emitting electrode structure is to adopt special process, forms height P-N knot on crystal silicon solar energy battery silicon chip (hereinafter to be referred as silicon chip) surface.Selective emitting electrode structure has two essential characteristics, and the one, under gate electrode line, form highly doped dark diffusion region; The 2nd, other zones under grid line form low-doped diffusion region.The selective emitting electrode structure that realization has above characteristic on crystal silicon solar energy battery is the key point of selective emitter technology.
The method that on silicon chip, realizes selective emitting electrode structure adopts the laser doping technology, and this technology is the selective emitter technology of a low cost, easy realization easy and simple to handle.It is very important in the laser doping process, whether reaching desirable doping effect.In the laser doping process, high laser energy can cause damage to silicon chip surface, thereby reduces the conversion efficiency of crystal silicon solar energy battery.Therefore, laser doping is made in the selective emitter cell process, needs to adopt lower laser energy.Under the sufficiently high situation of silicon chip surface phosphorus source concentration, use lower laser energy can be on the surface of silicon chip the P-N knot that needs of formation.
In the prior art, realize the two kinds of methods that deposit in phosphorus source at silicon chip surface, a kind of is that silicon chip is placed in the hot environment, realizes the deposition in silicon chip surface phosphorus source behind TongYuan, the logical oxygen; Another kind is that silicon chip is placed in the low temperature environment, and the mode that adopts high temperature to advance behind TongYuan, the logical oxygen is carried out the deposition in phosphorus source.Source described in two kinds of methods is POCL3, and in hot environment, temperature value generally is higher than 820 ℃; In the low temperature environment, temperature value generally is lower than 800 ℃.Shown in table 1 and table 2, the technological process of the phosphorus source deposition in table 1 prior art under the hot environment; The technological process of the phosphorus source deposition in table 2 prior art under the low temperature environment.
The technological process of the phosphorus source deposition in table 1 prior art under the hot environment
| N 2(SLM) | O 2 | POCL 3 | |
| LOAD?IN | N 2 | ||
| PADDLE?OUT | N 2 | ||
| RECOVERY | N 2 | ||
| STABILIZE | N 2 | ||
| PREPURGE | N 2 | O 2 | |
| POCL3DEP | N 2 | O 2 | POCL 3 |
| POSTPURGE | N 2 | O 2 | |
| COOLDOWN | N 2 | ||
| PADDLE?IN | N 2 | ||
| LOAD?OUT | N 2 |
In hot environment, carry out TongYuan, logical oxygen technology, hot environment helps the deposition in phosphorus source, makes the phosphorus source of silicon chip surface reach the working concentration that needs as soon as possible.TongYuan and logical oxygen a period of time, after the phosphorus source of crystal silicon solar energy battery silicon chip surface reached finite concentration, this concentration was the phosphorus source concentration of silicon chip silicon chip surface when carrying out laser doping technology, was confirmed by the concrete condition of production behind TongYuan, the logical oxygen.When the phosphorus source of silicon chip surface concentration arrived predetermined concentration, specifically to table 1 during the COOLDOWN step, the phosphorus source of silicon chip surface reached predetermined phosphorus source concentration, can carry out laser doping technology
The technological process of the phosphorus source deposition in table 2 prior art under the low temperature environment
| A2 | N 2(SLM) | O 2 | POCL 3 |
| LOAD?IN | N 2 | ||
| PADDLE?OUT | N 2 | ||
| RECOVERY | N 2 | ||
| STABILIZE | N 2 | ||
| PREPURGE | N 2 | O 2 | |
| POCL3DEP | N 2 | O 2 | POCL 3 |
| HEAT?UP | N 2 | O 2(or nothing) | |
| DRIVER?IN | N 2 | O 2 | |
| POSTPURGE | N 2 | O 2 | |
| COOLDOWN | N 2 | ||
| PADDLE?IN | N 2 | ||
| LOAD?OUT | N 2 |
In the time of in low temperature environment, at first the silicon chip TongYuan in being in low temperature environment, logical oxygen carry out high temperature in the time of low temperature environment TongYuan, logical oxygen and advance, and progradation helps the deposition in phosphorus source, and has guaranteed the concentration in phosphorus source.High temperature when the phosphorus source of silicon chip surface concentration reaches preset concentration, when promptly arriving the COOLDOWN step in the table 2, can carry out follow-up processing technologys such as laser doping to the post-depositional silicon chip in phosphorus source after advancing a period of time.
In order to reach the purpose that the lower laser energy of use carries out needed doping; The phosphorus source of enough concentration need be provided on the surface of crystal silicon solar energy battery silicon chip; Usually the method for taking for TongYuan's time of prolonging the phosphorus source, strengthen measure such as phosphorus source flux, to improve the phosphorus source concentration of silicon chip surface.Yet, adopt modes such as prolonging TongYuan's time or enlargement discharge, not only caused the rising of the whole cost of laser doping, do not reach the effect of the making selective emitter mechanism battery of expection yet.
Therefore, how realizing guaranteeing guaranteeing the surface quality of crystal silicon solar batteries silicon chip simultaneously for the laser doping technology provides enough phosphorus source concentration, is present those skilled in the art's problem demanding prompt solution.
Summary of the invention
In view of this, the invention provides a kind of selective emitter battery secondary deposition diffusion technology, to realize that guaranteeing is that the laser doping technology provides enough phosphorus source concentration, guarantees the surface quality of crystal silicon solar batteries silicon chip simultaneously.
In order to achieve the above object, the present invention provides following technical scheme:
A kind of selective emitter battery secondary deposition diffusion technology is used for carrying out phosphorus source deposition at the crystal silicon solar batteries silicon chip surface, may further comprise the steps:
1) said crystal silicon solar batteries silicon chip is placed the first preset temperature environment, TongYuan, logical oxygen to phosphorus source deposit to preset concentration, obtain the post-depositional crystal silicon solar batteries in phosphorus source;
2) be cooled to second preset temperature after, continue TongYuan, logical oxygen carries out phosphorus source deposition, obtains the post-depositional crystal silicon solar batteries of secondary after the laser doping;
Perhaps,
1) said crystal silicon solar batteries silicon chip is placed the 3rd preset temperature environment, TongYuan, logical oxygen are advanced into the phosphorus source with first preset temperature and deposit to preset concentration, obtain the post-depositional crystal silicon solar batteries in phosphorus source;
2) be cooled to second preset temperature after, continue TongYuan, logical oxygen carries out phosphorus source deposition, obtains the post-depositional crystal silicon solar batteries of secondary after the laser doping.
Preferably, in above-mentioned selective emitter battery secondary deposition diffusion technology, said first preset temperature is greater than 820 ℃.
Preferably, in above-mentioned selective emitter battery secondary deposition diffusion technology, said second preset temperature is 600-800 ℃.
Preferably, in above-mentioned selective emitter battery secondary deposition diffusion technology, said the 3rd preset temperature is less than 800 ℃.
Selective emitter battery secondary deposition diffusion technology provided by the invention; Be used for carrying out phosphorus source deposition at the crystal silicon solar batteries silicon chip surface; May further comprise the steps; Said crystal silicon solar batteries silicon chip is placed the first preset temperature environment, and TongYuan, logical oxygen to phosphorus source deposit to preset concentration, obtain the post-depositional crystal silicon solar batteries in phosphorus source; After being cooled to second preset temperature, continue TongYuan, logical oxygen, obtain the post-depositional crystal silicon solar batteries of secondary after the laser doping to carry out phosphorus source deposition.Perhaps, said crystal silicon solar batteries silicon chip is placed the 3rd preset temperature environment, TongYuan, logical oxygen are advanced into the phosphorus source with first preset temperature and deposit to preset concentration, obtain the post-depositional crystal silicon solar batteries in phosphorus source; After being cooled to second preset temperature, continue TongYuan, logical oxygen, obtain the post-depositional crystal silicon solar batteries of secondary after the laser doping to carry out phosphorus source deposition.TongYuan, logical oxygen in the environment of first preset temperature carry out phosphorus source deposition perhaps TongYuan, logical oxygen in the environment of the 3rd preset temperature, carry out phosphorus source deposition with first preset temperature; After reaching preset concentration to the phosphorus source concentration of crystal silicon solar batteries silicon chip surface, reduce temperature to the second preset temperature after, continue TongYuan, logical oxygen; At this moment; The phosphorus source can continue to deposit at silicon chip surface, makes the phosphorus source concentration of silicon chip surface improve, and the surperficial phosphorus source higher crystal silicon solar batteries silicon chip of concentration is carried out laser doping technology; Can adopt lower laser energy, obtain satisfactory crystal silicon solar batteries.The present invention has guaranteed to have guaranteed the surface quality of crystal silicon solar batteries silicon chip simultaneously for the laser doping technology provides enough phosphorus source concentration through carry out the deposition in secondary phosphorus source on the crystal silicon solar surface.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
The comparison diagram of the solar cell test ECV that the selective emitter battery secondary deposition diffusion technology front and back that Fig. 1 provides for the application present embodiment prepare.
Embodiment
The invention discloses a kind of selective emitter battery secondary deposition diffusion technology, to realize that guaranteeing is that the laser doping technology provides enough phosphorus source concentration, guarantees the surface quality of crystal silicon solar batteries silicon chip simultaneously.
To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention is carried out clear, complete description, obviously, described true example only is the true example of the present invention's part, rather than whole embodiment.Based on embodiments of the invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
Present embodiment provides a kind of selective emitter battery secondary deposition diffusion technology; Be used for carrying out phosphorus source deposition at the crystal silicon solar batteries silicon chip surface; May further comprise the steps; Said crystal silicon solar batteries silicon chip is placed the first preset temperature environment, and TongYuan, logical oxygen to phosphorus source deposit to preset concentration, obtain the post-depositional crystal silicon solar batteries in phosphorus source; After obtaining the crystal silicon solar batteries after the primary depositing, will have environment temperature reduction to the second preset temperature of first preset temperature after, continue TongYuan, logical oxygen to carry out phosphorus source deposition, obtain the post-depositional crystal silicon solar batteries of secondary after the laser doping.
Perhaps, said crystal silicon solar batteries silicon chip is placed the 3rd preset temperature environment, TongYuan, logical oxygen are advanced into the phosphorus source with first preset temperature and deposit to preset concentration, obtain the post-depositional crystal silicon solar batteries in phosphorus source; After obtaining the crystal silicon solar batteries after the primary depositing, will have environment temperature reduction to the second preset temperature of first preset temperature after, continue TongYuan, logical oxygen to carry out phosphorus source deposition, obtain the post-depositional crystal silicon solar batteries of secondary after the laser doping.
The secondary deposition process of the selective emitter battery secondary deposition diffusion technology that present embodiment provides is following:
TongYuan, logical oxygen in the environment of first preset temperature, carry out phosphorus source deposition or in the environment of the 3rd preset temperature TongYuan, logical oxygen, carry out phosphorus source deposition with first preset temperature, the deposition process in phosphorus source is the process that spreads to silicon chip surface of phosphorus source very.After the phosphorus source concentration that is deposited into crystal silicon solar batteries surface when the phosphorus source reaches preset concentration, reduce temperature to the second preset temperature after, continue TongYuan, logical oxygen; At this moment; The phosphorus source can continue to deposit on the crystal silicon solar surface, makes the phosphorus source concentration on crystal silicon solar batteries surface improve, and the surperficial phosphorus source higher crystal silicon solar batteries of concentration is carried out laser doping technology; Can adopt lower laser energy, obtain satisfactory crystal silicon solar batteries.
The present invention has guaranteed to have guaranteed the surface quality of crystal silicon solar batteries silicon chip simultaneously for the laser doping technology provides enough phosphorus source concentration through carry out the deposition in secondary phosphorus source on the crystal silicon solar surface.
In order more intuitively the foregoing description to be described, such scheme tabulated to be illustrated.Shown in table 3 and table 4, table 3 is the technological process of the phosphorus source secondary deposition under the hot environment; Table 4 is the technological process of the phosphorus source secondary deposition under the low temperature environment.
Example 1 is carried out selective emitter battery secondary deposition diffusion technology to the crystal silicon solar batteries silicon chip in hot environment.
The technological process of the phosphorus source secondary deposition under table 3 hot environment
| N 2(SLM) | O 2 | POCL 3 | |
| LOAD?IN | N 2 | ||
| PADDLE?OUT | N 2 | ||
| RECOVERY | N 2 | ||
| STABILIZE | N 2 | ||
| PREPURGE | N 2 | O 2 | |
| POCL3DEP | N 2 | O 2 | POCL 3 |
| POSTPURGE | N 2 | O 2 | |
| COOLDOWN | N 2 | ||
| POCL3DEP | N 2 | O 2 | POCL 3 |
| POSTPURGE | N 2 | O 2 | |
| PADDLE?IN | N 2 | ||
| LOAD?OUT | N 2 |
Table 3 deposits diffusion technology for the selective emitter battery secondary that is applied under the hot environment that present embodiment provides.For the concentration in the phosphorus source of improving silicon chip surface, under hot environment, carry out the technology of phosphorus source deposition for the first time, hot environment is that temperature value is the environment of first preset temperature.Concrete, the temperature value of first preset temperature is greater than 820 ℃.The technological process that provides with table 1 is the basis, when the phosphorus source is deposited into the COOLDOWN step, hot environment is cooled to second preset temperature, and is concrete, and the temperature value of second preset temperature is set to 600-800 ℃.Different temperature is influential in the diffusion velocity of silicon chip surface to the formation speed and the phosphorus source in silicon chip surface phosphorus source; When temperature is set to 600-800 ℃; Silicon chip surface can continue the sedimentary phosphor source; The purpose of secondary deposition is to slow down the speed of the P of silicon chip surface to the silicon chip diffusion inside, makes silicon chip surface form more shallow P-N knot, and the switching rate of the crystal silicon solar batteries that obtains is improved.
Silicon chip continues TongYuan, logical oxygen, under this temperature after the first time, the phosphorus source deposited; Silicon chip surface can be proceeded the deposition process in phosphorus source, treat that secondary phosphorus source is deposited into finite concentration after, carry out follow-up technologies such as laser doping; More obviously improve because the phosphorus source concentration of silicon chip surface is existing; Can use lower laser energy during the correspondence laser doping, thereby avoid damage, improve the surface quality of crystal silicon solar batteries silicon chip the silicon chip surface quality.
Example 2 is carried out selective emitter battery secondary deposition diffusion technology to the crystal silicon solar batteries silicon chip in low temperature environment.
The technological process of the phosphorus source secondary deposition under table 4 low temperature environment
| B2 | N 2(SLM) | O 2 | POCL 3 |
| LOAD?IN | N 2 | ||
| PADDLE?OUT | N 2 | ||
| RECOVERY | N 2 | ||
| STABILIZE | N 2 | ||
| PREPURGE | N 2 | O 2 | |
| POCL3DEP | N 2 | O 2 | POCL 3 |
| HEAT?UP | N 2 | O 2(or nothing) | |
| DRIVER?IN | N 2 | O 2 | |
| POSTPURGE | N 2 | O 2 | |
| COOLDOWN | N 2 | ||
| POCL3DEP | N 2 | O 2 | POCL 3 |
| POSTPURGE | N 2 | O 2 | |
| PADDLE?IN | N 2 | ||
| LOAD?OUT | N 2 |
Table 4 deposits diffusion technology for the selective emitter battery secondary that is applied under the low temperature environment that present embodiment provides.For the concentration in the phosphorus source of improving silicon chip surface, TongYuan, logical oxygen under low temperature environment, the temperature value of low temperature environment is set to ambient temperature and is the 3rd preset temperature, and is concrete, and the temperature of the 3rd preset temperature is set to less than 800 ℃.And carry out the technology of phosphorus source deposition for the first time with the means that high temperature advances, and promptly adopt first preset temperature to advance, the temperature value of first preset temperature is greater than 820 ℃.In low temperature environment behind TongYuan, the logical oxygen; The high temperature progradation can also be provided with the 4th preset temperature; The temperature value of the 4th preset temperature and the 3rd preset temperature do not have tangible magnitude relationship, are as the criterion in progradation, to make silicon chip surface reach best phosphorus source deposition concentration.Preferably, the 4th preset temperature is identical with first preset temperature, and the temperature value of the 4th preset temperature is greater than 820 ℃.The technological process that provides with table 3 is the basis, when the phosphorus source is deposited into the COOLDOWN step, ambient temperature is cooled to second preset temperature (600-800 ℃); Continue TongYuan, logical oxygen, under this temperature, silicon chip surface can be proceeded the deposition process in phosphorus source; After treating that secondary phosphorus source is deposited into finite concentration; Carry out follow-up technologies such as laser doping, more obviously improve, can use lower laser energy during corresponding laser doping because the phosphorus source concentration of silicon chip surface is existing; Thereby avoided damage, improved the surface quality of crystal silicon solar batteries silicon chip the silicon chip surface quality.
After the diffusion technology in prior art that provides according to present embodiment is carried out the deposition in phosphorus source for the first time; The secondary deposition in phosphorus source is carried out in cooling, can enough phosphorus sources be provided for the laser doping selective emitter, and it is very low to have guaranteed that the square resistance under the grid line can be done; Reach the instructions for use of technology; And the selective emitter battery secondary that present embodiment provides deposition diffusion process method is simple, is prone to realize, is used in large-scale industrialized production.
As shown in Figure 1, the comparison diagram of the solar cell test ECV that the selective emitter battery secondary deposition diffusion technology front and back that Fig. 1 provides for the application present embodiment prepare.
In comparison diagram, the X axle is represented the degree of depth of silicon chip surface P-N knot, and the Y axle is represented the concentration of impurities on surface of silicon chip.Among the figure, deposit three curve charts that curve is the test result of original diffusion technology of (the secondary deposition that the back deposition refers to the phosphorus source that present embodiment provides) without male offspring; Other two curves are the curve chart of the test result of the selective emitter battery secondary deposition diffusion technology that provides of present embodiment.Wherein, curve 3 is the ECV performance curve of the solar cell of the processing technology acquisition shown in the employing table 1; Curve 4, curve are the ECV performance curve that adopts the solar cell of the processing technology acquisition shown in the table 3; Curve 1 is the ECV performance curve of the solar cell of the processing technology acquisition shown in the employing table 2; Curve 2 is the ECV performance curve of the solar cell of the processing technology acquisition shown in the employing table 2.
Can know by each curve position in the drawings, the selective emitter battery secondary deposition diffusion technology that adopts present embodiment to provide, be applied in the hot environment or low temperature environment in, all can effectively improve Solar cell performance.And in hot environment with low temperature environment in respectively the preparation solar cell, when the degree of depth of P-N was more shallow, the Solar cell performance for preparing in the hot environment was higher than the solar cell for preparing in the low temperature environment; And along with the degree of depth of P-N knot increases, the solar cell that the Solar cell performance for preparing in the hot environment prepares in the lower temperature environment on the contrary is low.Through the performance map of the silicon chip of solar cell shown in this curve, can in the technology of preparation solar cell directive function be provided for the selective emitter battery secondary deposition diffusion technology that present embodiment provides.
As shown in table 5, the contrast table of the solar cell electrical quantity that the selective emitter battery secondary deposition diffusion technology front and back that table 5 provides for the application present embodiment prepare.
Electrical quantity contrast table before and after the table 5 secondary deposition
The electrical quantity contrast table that provides through table 5 can draw; Selective emitter battery secondary deposition diffusion technology to solar cell adopts present embodiment to provide is carried out the preparation of solar cell; The solar cell that the electrical quantity of the solar cell that the preparation back obtains deposits on the whole without male offspring increases, thereby has guaranteed the serviceability of selective emitter battery.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined General Principle can realize under the situation that does not break away from the spirit or scope of the present invention in other embodiments among this paper.Therefore, the present invention will can not be restricted to these embodiment shown in this paper, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (4)
1. a selective emitter battery secondary deposition diffusion technology is used for carrying out phosphorus source deposition at the crystal silicon solar batteries silicon chip surface, it is characterized in that, may further comprise the steps:
1) said crystal silicon solar batteries silicon chip is placed the first preset temperature environment, TongYuan, logical oxygen to phosphorus source deposit to preset concentration, obtain the post-depositional crystal silicon solar batteries in phosphorus source;
2) be cooled to second preset temperature after, continue TongYuan, logical oxygen carries out phosphorus source deposition, obtains the post-depositional crystal silicon solar batteries of secondary after the laser doping;
Perhaps,
1) said crystal silicon solar batteries silicon chip is placed the 3rd preset temperature environment, TongYuan, logical oxygen are advanced into the phosphorus source with first preset temperature and deposit to preset concentration, obtain the post-depositional crystal silicon solar batteries in phosphorus source;
2) be cooled to second preset temperature after, continue TongYuan, logical oxygen carries out phosphorus source deposition, obtains the post-depositional crystal silicon solar batteries of secondary after the laser doping.
2. selective emitter battery secondary deposition diffusion technology according to claim 1 is characterized in that said first preset temperature is greater than 820 ℃.
3. selective emitter battery secondary deposition diffusion technology according to claim 1 is characterized in that said second preset temperature is 600-800 ℃.
4. selective emitter battery secondary deposition diffusion technology according to claim 1 is characterized in that said the 3rd preset temperature is less than 800 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100585340A CN102569532A (en) | 2012-03-07 | 2012-03-07 | Secondary deposition and dispersion process for selective emitter battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100585340A CN102569532A (en) | 2012-03-07 | 2012-03-07 | Secondary deposition and dispersion process for selective emitter battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102569532A true CN102569532A (en) | 2012-07-11 |
Family
ID=46414476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100585340A Pending CN102569532A (en) | 2012-03-07 | 2012-03-07 | Secondary deposition and dispersion process for selective emitter battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102569532A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050581A (en) * | 2013-01-11 | 2013-04-17 | 奥特斯维能源（太仓）有限公司 | Diffusion technology for laser doping selectivity emitter junction |
| CN104157736A (en) * | 2014-08-15 | 2014-11-19 | 内蒙古日月太阳能科技有限责任公司 | Solar cell manufacturing method and solar cell |
| CN107394012A (en) * | 2017-08-18 | 2017-11-24 | 常州亿晶光电科技有限公司 | A kind of silicon chip laser doping SE diffusion technique |
| CN109888062A (en) * | 2019-03-29 | 2019-06-14 | 江苏日托光伏科技股份有限公司 | A kind of MWT solar battery laser SE+ alkali polishing diffusion technique |
| CN109888054A (en) * | 2019-01-16 | 2019-06-14 | 晶科能源科技（海宁）有限公司 | A kind of preparation method of the not damaged selective emitter of photovoltaic cell |
| CN110148650A (en) * | 2019-05-17 | 2019-08-20 | 上海神舟新能源发展有限公司 | The preparation method of laser doping SE is carried out in silicon chip surface |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101980381A (en) * | 2010-09-29 | 2011-02-23 | 山东力诺太阳能电力股份有限公司 | Crystalline silicon solar cell double-diffusion technology |
-
2012
- 2012-03-07 CN CN2012100585340A patent/CN102569532A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101980381A (en) * | 2010-09-29 | 2011-02-23 | 山东力诺太阳能电力股份有限公司 | Crystalline silicon solar cell double-diffusion technology |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050581A (en) * | 2013-01-11 | 2013-04-17 | 奥特斯维能源（太仓）有限公司 | Diffusion technology for laser doping selectivity emitter junction |
| CN104157736A (en) * | 2014-08-15 | 2014-11-19 | 内蒙古日月太阳能科技有限责任公司 | Solar cell manufacturing method and solar cell |
| CN107394012A (en) * | 2017-08-18 | 2017-11-24 | 常州亿晶光电科技有限公司 | A kind of silicon chip laser doping SE diffusion technique |
| CN109888054A (en) * | 2019-01-16 | 2019-06-14 | 晶科能源科技（海宁）有限公司 | A kind of preparation method of the not damaged selective emitter of photovoltaic cell |
| CN109888062A (en) * | 2019-03-29 | 2019-06-14 | 江苏日托光伏科技股份有限公司 | A kind of MWT solar battery laser SE+ alkali polishing diffusion technique |
| CN109888062B (en) * | 2019-03-29 | 2021-03-30 | 江苏日托光伏科技股份有限公司 | MWT solar cell laser SE + alkali polishing diffusion process |
| CN110148650A (en) * | 2019-05-17 | 2019-08-20 | 上海神舟新能源发展有限公司 | The preparation method of laser doping SE is carried out in silicon chip surface |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101916799B (en) | Method for preparing crystalline silicon solar cell selective emitter junction | |
| CN105895738A (en) | Passivated contact N-type solar cell, preparation method, assembly and system | |
| CN102569532A (en) | Secondary deposition and dispersion process for selective emitter battery | |
| CN107968127A (en) | One kind passivation contact N-type solar cell and preparation method, component and system | |
| CN103618023B (en) | A kind of high square resistance diffusion technology | |
| CN102820383A (en) | Spread method of polycrystalline silicon solar cell | |
| CN102593262A (en) | Diffusion method for solace cell with polycrystalline silicon selective emitter | |
| CN102769069A (en) | Boron diffusion method of crystalline silicon solar cell | |
| CN104409339A (en) | P diffusion method of silicon wafer and preparation method of solar cell | |
| CN103715308A (en) | Low-temperature varying temperature diffusion technology of polycrystalline silicon solar cell | |
| CN102637778A (en) | PN junction diffusion method | |
| CN102586884A (en) | Polysilicon silicon chip double-diffusion manufacturing method | |
| CN102810599A (en) | Phosphorous diffusion method of polycrystalline silicon solar cell | |
| CN102925982B (en) | Solar cell and diffusion method of solar cell | |
| CN102544238B (en) | Multi-diffusion manufacturing method for polycrystalline silicon wafer | |
| CN104538485A (en) | Preparation method of double-sided battery | |
| CN109755330B (en) | Pre-diffusion sheet for passivating contact structures, and preparation method and application thereof | |
| CN102280373A (en) | Diffusion method for preparing emitter of polycrystalline silicon solar battery | |
| CN103178157B (en) | Method for manufacturing polycrystalline silicon solar cells with selective emitters | |
| CN103022229B (en) | A kind of method of diffusion making solar cell | |
| CN208422924U (en) | A kind of passivation contact N-type solar battery, component and system | |
| CN103618025B (en) | A kind of crystalline silicon back junction solar battery preparation method | |
| CN102487100A (en) | Diffusion method used for solar cell | |
| CN104409557A (en) | Diffusion method for deepening PN junction of silicon wafer and silicon wafer | |
| CN104009121B (en) | The two-sided grooving and grid burying battery preparation method of P type crystalline silicon |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120711 |