CS171283B2 - - Google Patents
Info
- Publication number
- CS171283B2 CS171283B2 CS341573A CS341573A CS171283B2 CS 171283 B2 CS171283 B2 CS 171283B2 CS 341573 A CS341573 A CS 341573A CS 341573 A CS341573 A CS 341573A CS 171283 B2 CS171283 B2 CS 171283B2
- Authority
- CS
- Czechoslovakia
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19722223868 DE2223868C3 (de) | 1972-05-16 | 1972-05-16 | Verfahren und Vorrichtung zum Herstellen von aus Halbleitermaterial bestehenden Hohlkörpern, insbesondere von Siliciumrohren |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CS171283B2 true CS171283B2 (cs) | 1976-10-29 |
Family
ID=5845030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS341573A CS171283B2 (cs) | 1972-05-16 | 1973-05-14 |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS551700B2 (cs) |
| BE (1) | BE789719A (cs) |
| CA (1) | CA996844A (cs) |
| CS (1) | CS171283B2 (cs) |
| DD (1) | DD104029A5 (cs) |
| DE (1) | DE2223868C3 (cs) |
| GB (1) | GB1392142A (cs) |
| IT (1) | IT987169B (cs) |
| NL (1) | NL7217452A (cs) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101218175A (zh) * | 2005-04-10 | 2008-07-09 | 瑞科硅公司 | 多晶硅的制备 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1917016B2 (de) * | 1969-04-02 | 1972-01-05 | Siemens AG, 1000 Berlin u. 8000 München | Verfahren zur herstellung von hohlkoerpern aus halbleiter material |
| DE2022025C3 (de) * | 1970-05-05 | 1980-03-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Herstellen eines Hohlkörpers aus Halbleitermaterial |
-
0
- BE BE789719D patent/BE789719A/xx unknown
-
1972
- 1972-05-16 DE DE19722223868 patent/DE2223868C3/de not_active Expired
- 1972-12-21 NL NL7217452A patent/NL7217452A/xx unknown
-
1973
- 1973-02-16 GB GB765673A patent/GB1392142A/en not_active Expired
- 1973-04-13 CA CA168,722A patent/CA996844A/en not_active Expired
- 1973-05-08 IT IT2380573A patent/IT987169B/it active
- 1973-05-11 DD DD17077773A patent/DD104029A5/xx unknown
- 1973-05-14 JP JP5268073A patent/JPS551700B2/ja not_active Expired
- 1973-05-14 CS CS341573A patent/CS171283B2/cs unknown
Also Published As
| Publication number | Publication date |
|---|---|
| IT987169B (it) | 1975-02-20 |
| DD104029A5 (cs) | 1974-02-20 |
| NL7217452A (cs) | 1973-11-20 |
| DE2223868C3 (de) | 1981-06-19 |
| DE2223868B2 (de) | 1980-09-04 |
| BE789719A (fr) | 1973-02-01 |
| DE2223868A1 (de) | 1973-11-29 |
| JPS551700B2 (cs) | 1980-01-16 |
| GB1392142A (en) | 1975-04-30 |
| JPS4950865A (cs) | 1974-05-17 |
| CA996844A (en) | 1976-09-14 |