BE789719A - Procede et dispositif de fabrication de corps creux en matiere semi-conductrice, en particulier des tubes en silicium - Google Patents

Procede et dispositif de fabrication de corps creux en matiere semi-conductrice, en particulier des tubes en silicium

Info

Publication number
BE789719A
BE789719A BE789719DA BE789719A BE 789719 A BE789719 A BE 789719A BE 789719D A BE789719D A BE 789719DA BE 789719 A BE789719 A BE 789719A
Authority
BE
Belgium
Prior art keywords
semiconductor material
hollow bodies
particular silicon
manufacturing hollow
silicon tubes
Prior art date
Application number
Other languages
English (en)
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE789719A publication Critical patent/BE789719A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
BE789719D 1972-05-16 Procede et dispositif de fabrication de corps creux en matiere semi-conductrice, en particulier des tubes en silicium BE789719A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722223868 DE2223868C3 (de) 1972-05-16 1972-05-16 Verfahren und Vorrichtung zum Herstellen von aus Halbleitermaterial bestehenden Hohlkörpern, insbesondere von Siliciumrohren

Publications (1)

Publication Number Publication Date
BE789719A true BE789719A (fr) 1973-02-01

Family

ID=5845030

Family Applications (1)

Application Number Title Priority Date Filing Date
BE789719D BE789719A (fr) 1972-05-16 Procede et dispositif de fabrication de corps creux en matiere semi-conductrice, en particulier des tubes en silicium

Country Status (9)

Country Link
JP (1) JPS551700B2 (cs)
BE (1) BE789719A (cs)
CA (1) CA996844A (cs)
CS (1) CS171283B2 (cs)
DD (1) DD104029A5 (cs)
DE (1) DE2223868C3 (cs)
GB (1) GB1392142A (cs)
IT (1) IT987169B (cs)
NL (1) NL7217452A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008535758A (ja) * 2005-04-10 2008-09-04 アールイーシー シリコン インコーポレイテッド 多結晶シリコンの製造

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1917016B2 (de) * 1969-04-02 1972-01-05 Siemens AG, 1000 Berlin u. 8000 München Verfahren zur herstellung von hohlkoerpern aus halbleiter material
DE2022025C3 (de) * 1970-05-05 1980-03-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Herstellen eines Hohlkörpers aus Halbleitermaterial

Also Published As

Publication number Publication date
JPS4950865A (cs) 1974-05-17
DE2223868B2 (de) 1980-09-04
DE2223868C3 (de) 1981-06-19
NL7217452A (cs) 1973-11-20
CS171283B2 (cs) 1976-10-29
JPS551700B2 (cs) 1980-01-16
IT987169B (it) 1975-02-20
DD104029A5 (cs) 1974-02-20
DE2223868A1 (de) 1973-11-29
GB1392142A (en) 1975-04-30
CA996844A (en) 1976-09-14

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