IT987169B - Procedimento e dispositivo per fabbricare oggetti cavi costi tuiti di materiale semicondut tore specialmente tubi di silicio - Google Patents

Procedimento e dispositivo per fabbricare oggetti cavi costi tuiti di materiale semicondut tore specialmente tubi di silicio

Info

Publication number
IT987169B
IT987169B IT2380573A IT2380573A IT987169B IT 987169 B IT987169 B IT 987169B IT 2380573 A IT2380573 A IT 2380573A IT 2380573 A IT2380573 A IT 2380573A IT 987169 B IT987169 B IT 987169B
Authority
IT
Italy
Prior art keywords
tuite
costs
semiconductor material
material especially
manufacturing hollow
Prior art date
Application number
IT2380573A
Other languages
English (en)
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT987169B publication Critical patent/IT987169B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
IT2380573A 1972-05-16 1973-05-08 Procedimento e dispositivo per fabbricare oggetti cavi costi tuiti di materiale semicondut tore specialmente tubi di silicio IT987169B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722223868 DE2223868C3 (de) 1972-05-16 1972-05-16 Verfahren und Vorrichtung zum Herstellen von aus Halbleitermaterial bestehenden Hohlkörpern, insbesondere von Siliciumrohren

Publications (1)

Publication Number Publication Date
IT987169B true IT987169B (it) 1975-02-20

Family

ID=5845030

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2380573A IT987169B (it) 1972-05-16 1973-05-08 Procedimento e dispositivo per fabbricare oggetti cavi costi tuiti di materiale semicondut tore specialmente tubi di silicio

Country Status (9)

Country Link
JP (1) JPS551700B2 (cs)
BE (1) BE789719A (cs)
CA (1) CA996844A (cs)
CS (1) CS171283B2 (cs)
DD (1) DD104029A5 (cs)
DE (1) DE2223868C3 (cs)
GB (1) GB1392142A (cs)
IT (1) IT987169B (cs)
NL (1) NL7217452A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101218175A (zh) * 2005-04-10 2008-07-09 瑞科硅公司 多晶硅的制备

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1917016B2 (de) * 1969-04-02 1972-01-05 Siemens AG, 1000 Berlin u. 8000 München Verfahren zur herstellung von hohlkoerpern aus halbleiter material
DE2022025C3 (de) * 1970-05-05 1980-03-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Herstellen eines Hohlkörpers aus Halbleitermaterial

Also Published As

Publication number Publication date
DD104029A5 (cs) 1974-02-20
NL7217452A (cs) 1973-11-20
DE2223868C3 (de) 1981-06-19
DE2223868B2 (de) 1980-09-04
CS171283B2 (cs) 1976-10-29
BE789719A (fr) 1973-02-01
DE2223868A1 (de) 1973-11-29
JPS551700B2 (cs) 1980-01-16
GB1392142A (en) 1975-04-30
JPS4950865A (cs) 1974-05-17
CA996844A (en) 1976-09-14

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