IT981862B - Processo per la produzione di silicio metallico - Google Patents
Processo per la produzione di silicio metallicoInfo
- Publication number
- IT981862B IT981862B IT22538/73A IT2253873A IT981862B IT 981862 B IT981862 B IT 981862B IT 22538/73 A IT22538/73 A IT 22538/73A IT 2253873 A IT2253873 A IT 2253873A IT 981862 B IT981862 B IT 981862B
- Authority
- IT
- Italy
- Prior art keywords
- production
- metallic silicon
- metallic
- silicon
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US00241085A US3809571A (en) | 1972-04-04 | 1972-04-04 | Process for making silicon metal |
Publications (1)
Publication Number | Publication Date |
---|---|
IT981862B true IT981862B (it) | 1974-10-10 |
Family
ID=22909188
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT22538/73A IT981862B (it) | 1972-04-04 | 1973-04-03 | Processo per la produzione di silicio metallico |
Country Status (7)
Country | Link |
---|---|
US (1) | US3809571A (it) |
JP (1) | JPS4915619A (it) |
BE (1) | BE797694A (it) |
CA (1) | CA986686A (it) |
DE (1) | DE2316602C3 (it) |
FR (1) | FR2179047B1 (it) |
IT (1) | IT981862B (it) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4444812A (en) * | 1980-07-28 | 1984-04-24 | Monsanto Company | Combination gas curtains for continuous chemical vapor deposition production of silicon bodies |
DE3338852A1 (de) * | 1982-12-11 | 1984-06-14 | Maschf Augsburg Nuernberg Ag | Verfahren und vorrichtung zur beschichtung von werkstuecken mittels chemischer, heterogener gasphasenreaktion |
US5246734A (en) * | 1986-05-05 | 1993-09-21 | Dow Corning Corporation | Amorphous silicon hermetic coatings for optical wave guides |
US5082696A (en) * | 1986-10-03 | 1992-01-21 | Dow Corning Corporation | Method of forming semiconducting amorphous silicon films from the thermal decomposition of dihalosilanes |
US7033561B2 (en) | 2001-06-08 | 2006-04-25 | Dow Corning Corporation | Process for preparation of polycrystalline silicon |
US20020187096A1 (en) * | 2001-06-08 | 2002-12-12 | Kendig James Edward | Process for preparation of polycrystalline silicon |
CN101724895B (zh) * | 2009-12-17 | 2011-12-21 | 江苏中能硅业科技发展有限公司 | 一种多晶硅的生产工艺 |
JP5969230B2 (ja) * | 2012-03-16 | 2016-08-17 | 株式会社トクヤマ | 多結晶シリコンロッド |
US10208381B2 (en) | 2014-12-23 | 2019-02-19 | Rec Silicon Inc | Apparatus and method for managing a temperature profile using reflective energy in a thermal decomposition reactor |
-
1972
- 1972-04-04 US US00241085A patent/US3809571A/en not_active Expired - Lifetime
-
1973
- 1973-03-26 CA CA167,101A patent/CA986686A/en not_active Expired
- 1973-04-03 FR FR7311948A patent/FR2179047B1/fr not_active Expired
- 1973-04-03 DE DE2316602A patent/DE2316602C3/de not_active Expired
- 1973-04-03 IT IT22538/73A patent/IT981862B/it active
- 1973-04-03 JP JP48037478A patent/JPS4915619A/ja active Pending
- 1973-04-03 BE BE129574A patent/BE797694A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE2316602A1 (de) | 1973-10-18 |
BE797694A (fr) | 1973-10-03 |
US3809571A (en) | 1974-05-07 |
FR2179047A1 (it) | 1973-11-16 |
CA986686A (en) | 1976-04-06 |
FR2179047B1 (it) | 1977-04-29 |
DE2316602C3 (de) | 1979-12-20 |
JPS4915619A (it) | 1974-02-12 |
DE2316602B2 (de) | 1975-11-27 |
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