KR880002274A - 바이폴라형 반도체장치의 제조방법 - Google Patents

바이폴라형 반도체장치의 제조방법

Info

Publication number
KR880002274A
KR880002274A KR1019870007368A KR870007368A KR880002274A KR 880002274 A KR880002274 A KR 880002274A KR 1019870007368 A KR1019870007368 A KR 1019870007368A KR 870007368 A KR870007368 A KR 870007368A KR 880002274 A KR880002274 A KR 880002274A
Authority
KR
South Korea
Prior art keywords
semiconductor device
bipolar semiconductor
manufacturing bipolar
manufacturing
semiconductor
Prior art date
Application number
KR1019870007368A
Other languages
English (en)
Other versions
KR950003932B1 (ko
Inventor
야스히로 가츠마타
다카오 이토
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61161618A external-priority patent/JPS6317558A/ja
Priority claimed from JP61271208A external-priority patent/JPS63124564A/ja
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Publication of KR880002274A publication Critical patent/KR880002274A/ko
Application granted granted Critical
Publication of KR950003932B1 publication Critical patent/KR950003932B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/01—Bipolar transistors-ion implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/011—Bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
KR1019870007368A 1986-07-09 1987-07-09 바이폴라형 반도체장치의 제조방법 KR950003932B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP61161618A JPS6317558A (ja) 1986-07-09 1986-07-09 半導体装置の製造方法
JP61-161618 1986-07-09
JP61271208A JPS63124564A (ja) 1986-11-14 1986-11-14 半導体装置の製造方法
JP61-271208 1986-11-14

Publications (2)

Publication Number Publication Date
KR880002274A true KR880002274A (ko) 1988-04-30
KR950003932B1 KR950003932B1 (ko) 1995-04-21

Family

ID=26487684

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870007368A KR950003932B1 (ko) 1986-07-09 1987-07-09 바이폴라형 반도체장치의 제조방법

Country Status (2)

Country Link
US (1) US4782030A (ko)
KR (1) KR950003932B1 (ko)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS561556A (en) * 1979-06-18 1981-01-09 Hitachi Ltd Semiconductor device
US4898838A (en) * 1985-10-16 1990-02-06 Texas Instruments Incorporated Method for fabricating a poly emitter logic array
US4812417A (en) * 1986-07-30 1989-03-14 Mitsubishi Denki Kabushiki Kaisha Method of making self aligned external and active base regions in I.C. processing
JPH01274470A (ja) * 1988-04-26 1989-11-02 Nec Corp バイポーラ・トランジスタ装置及びその製造方法
GB8810973D0 (en) * 1988-05-10 1988-06-15 Stc Plc Improvements in integrated circuits
US4927774A (en) * 1988-06-10 1990-05-22 British Telecommunications Plc Self aligned bipolar fabrication process
US4980739A (en) * 1988-06-28 1990-12-25 Texas Instruments Incorporated Self-aligned bipolar transistor using selective polysilicon growth
US4986878A (en) * 1988-07-19 1991-01-22 Cypress Semiconductor Corp. Process for improved planarization of the passivation layers for semiconductor devices
US5001533A (en) * 1988-12-22 1991-03-19 Kabushiki Kaisha Toshiba Bipolar transistor with side wall base contacts
US5150184A (en) * 1989-02-03 1992-09-22 Texas Instruments Incorporated Method for forming emitters in a BiCMOS process
US4962365A (en) * 1989-03-30 1990-10-09 Texas Instruments Incorporated Integrated circuit trench resistor
US5227317A (en) * 1989-04-21 1993-07-13 Hitachi, Ltd. Method of manufacturing semiconductor integrated circuit bipolar transistor device
JPH02280340A (ja) * 1989-04-21 1990-11-16 Hitachi Ltd 半導体集積回路装置の製造方法
JPH0812865B2 (ja) * 1989-06-06 1996-02-07 株式会社東芝 バイポーラトランジスタとその製造方法
US5235204A (en) * 1990-08-27 1993-08-10 Taiwan Semiconductor Manufacturing Company Reverse self-aligned transistor integrated circuit
JPH04150017A (ja) * 1990-10-12 1992-05-22 Toshiba Corp 半導体装置の製造方法
FR2672733B1 (fr) * 1991-02-13 1997-08-22 France Telecom Perfectionnement au collecteur d'un transistor bipolaire compatible avec la technologie mos.
US5121184A (en) * 1991-03-05 1992-06-09 Hewlett-Packard Company Bipolar transistor containing a self-aligned emitter contact and method for forming transistor
KR930009111A (ko) * 1991-10-24 1993-05-22 와가 노리오 바이폴라트랜지스터, Bi-CMOS 장치 및 그 제조방법
JPH0793315B2 (ja) * 1992-11-27 1995-10-09 日本電気株式会社 半導体装置およびその製造方法
US5420457A (en) * 1993-11-12 1995-05-30 At&T Corp. Lateral high-voltage PNP transistor
US5465006A (en) * 1994-07-15 1995-11-07 Hewlett-Packard Company Bipolar stripe transistor structure
WO1996027901A1 (en) * 1995-03-07 1996-09-12 Micron Technology, Inc. Improved semiconductor contacts to thin conductive layers
US5719071A (en) * 1995-12-22 1998-02-17 Sgs-Thomson Microelectronics, Inc. Method of forming a landing pad sturcture in an integrated circuit
US5670417A (en) * 1996-03-25 1997-09-23 Motorola, Inc. Method for fabricating self-aligned semiconductor component
US6001701A (en) * 1997-06-09 1999-12-14 Lucent Technologies Inc. Process for making bipolar having graded or modulated collector
US6207521B1 (en) * 1999-06-11 2001-03-27 United Microelectronics Corp. Thin-film resistor employed in a semiconductor wafer and its method formation
JP4468609B2 (ja) * 2001-05-21 2010-05-26 株式会社ルネサステクノロジ 半導体装置
US20090212394A1 (en) * 2005-04-28 2009-08-27 Nxp B.V. Bipolar transistor and method of fabricating the same
US9236287B2 (en) * 2012-11-02 2016-01-12 GLOBALFOUNDIES Inc. Fabrication of localized SOI on localized thick box lateral epitaxial realignment of deposited non-crystalline film on bulk semiconductor substrates for photonics device integration
US9793288B2 (en) * 2014-12-04 2017-10-17 Sandisk Technologies Llc Methods of fabricating memory device with spaced-apart semiconductor charge storage regions

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5526630A (en) * 1978-08-14 1980-02-26 Nec Corp Semiconductor device
US4234362A (en) * 1978-11-03 1980-11-18 International Business Machines Corporation Method for forming an insulator between layers of conductive material
US4338138A (en) * 1980-03-03 1982-07-06 International Business Machines Corporation Process for fabricating a bipolar transistor
US4309812A (en) * 1980-03-03 1982-01-12 International Business Machines Corporation Process for fabricating improved bipolar transistor utilizing selective etching
FR2508704B1 (fr) * 1981-06-26 1985-06-07 Thomson Csf Procede de fabrication de transistors bipolaires integres de tres petites dimensions
JPS5866359A (ja) * 1981-09-28 1983-04-20 Fujitsu Ltd 半導体装置の製造方法
US4693782A (en) * 1985-09-06 1987-09-15 Matsushita Electric Industrial Co., Ltd. Fabrication method of semiconductor device

Also Published As

Publication number Publication date
US4782030A (en) 1988-11-01
KR950003932B1 (ko) 1995-04-21

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