IT1207497B - Monocristalli di arseniuro di gallio a bassa densita' di dislocazioni e di elevata purezza. - Google Patents
Monocristalli di arseniuro di gallio a bassa densita' di dislocazioni e di elevata purezza.Info
- Publication number
- IT1207497B IT1207497B IT8520936A IT2093685A IT1207497B IT 1207497 B IT1207497 B IT 1207497B IT 8520936 A IT8520936 A IT 8520936A IT 2093685 A IT2093685 A IT 2093685A IT 1207497 B IT1207497 B IT 1207497B
- Authority
- IT
- Italy
- Prior art keywords
- arseniuro
- gallio
- dislocations
- low density
- high purity
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8520936A IT1207497B (it) | 1985-05-29 | 1985-05-29 | Monocristalli di arseniuro di gallio a bassa densita' di dislocazioni e di elevata purezza. |
EP86304008A EP0206541B1 (en) | 1985-05-29 | 1986-05-27 | Gallium arsenide single crystals, and process for the preparation thereof |
DE8686304008T DE3683547D1 (de) | 1985-05-29 | 1986-05-27 | Galliumarsenideinkristalle und verfahren zu ihrer herstellung. |
US06/867,514 US4776971A (en) | 1985-05-29 | 1986-05-28 | Gallium arsenide single crystals with low dislocation density and high purity |
CA000510229A CA1277576C (en) | 1985-05-29 | 1986-05-28 | Gallium arsenide single crystals with low dislocation density and high purity |
JP61122408A JPS6212700A (ja) | 1985-05-29 | 1986-05-29 | 転位密度が小さくかつ純度が高いヒ化ガリウム単結晶 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8520936A IT1207497B (it) | 1985-05-29 | 1985-05-29 | Monocristalli di arseniuro di gallio a bassa densita' di dislocazioni e di elevata purezza. |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8520936A0 IT8520936A0 (it) | 1985-05-29 |
IT1207497B true IT1207497B (it) | 1989-05-25 |
Family
ID=11174314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT8520936A IT1207497B (it) | 1985-05-29 | 1985-05-29 | Monocristalli di arseniuro di gallio a bassa densita' di dislocazioni e di elevata purezza. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4776971A (it) |
EP (1) | EP0206541B1 (it) |
JP (1) | JPS6212700A (it) |
CA (1) | CA1277576C (it) |
DE (1) | DE3683547D1 (it) |
IT (1) | IT1207497B (it) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62105998A (ja) * | 1985-10-31 | 1987-05-16 | Sony Corp | シリコン基板の製法 |
JPH01239089A (ja) * | 1987-11-30 | 1989-09-25 | Toshiba Corp | 化合物半導体単結晶の製造方法及び製造装置 |
JPH0570288A (ja) * | 1991-09-09 | 1993-03-23 | Toshiba Corp | 化合物半導体単結晶の製造方法及び製造装置 |
JPH06157294A (ja) * | 1992-11-19 | 1994-06-03 | Tanabe Seiyaku Co Ltd | 脂肪微粒子製剤 |
JP4384774B2 (ja) * | 2000-02-07 | 2009-12-16 | Dowaホールディングス株式会社 | GaAs結晶の製造用原料 |
US7175707B2 (en) * | 2003-03-24 | 2007-02-13 | Hitachi Cable Ltd. | P-type GaAs single crystal and its production method |
US7366368B2 (en) * | 2004-06-15 | 2008-04-29 | Intel Corporation | Optical add/drop interconnect bus for multiprocessor architecture |
EP1739210B1 (de) * | 2005-07-01 | 2012-03-07 | Freiberger Compound Materials GmbH | Verfahren zur Herstellung von dotierten Halbleiter-Einkristallen, und III-V-Halbleiter-Einkristall |
JP4631884B2 (ja) * | 2007-08-22 | 2011-02-16 | 日立電線株式会社 | 閃亜鉛鉱型窒化物半導体自立基板、閃亜鉛鉱型窒化物半導体自立基板の製造方法、及び閃亜鉛鉱型窒化物半導体自立基板を用いた発光装置 |
US8329295B2 (en) | 2008-07-11 | 2012-12-11 | Freiberger Compound Materials Gmbh | Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient |
DE102008032628A1 (de) * | 2008-07-11 | 2010-01-28 | Freiberger Compound Materials Gmbh | Verfahren zur Herstellung von dotierten Galliumarsenidsubstratwafern mit niedrigem optischen Absorptionskoeffizienten |
JP5664239B2 (ja) | 2009-01-20 | 2015-02-04 | 住友電気工業株式会社 | 導電性GaAs単結晶と導電性GaAs単結晶基板およびそれらの作製方法 |
JP5370393B2 (ja) * | 2011-03-03 | 2013-12-18 | 住友電気工業株式会社 | 化合物半導体単結晶基板 |
JP5370394B2 (ja) * | 2011-03-03 | 2013-12-18 | 住友電気工業株式会社 | 化合物半導体単結晶基板 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE795938A (fr) * | 1972-03-01 | 1973-08-27 | Siemens Ag | Procede de fabrication d'une barre d'arseniure de gallium monocristalline exempte de dislocation |
US4058429A (en) * | 1975-12-04 | 1977-11-15 | Westinghouse Electric Corporation | Infrared temperature control of Czochralski crystal growth |
JPS5914440B2 (ja) * | 1981-09-18 | 1984-04-04 | 住友電気工業株式会社 | CaAs単結晶への硼素のド−ピング方法 |
JPS5869800A (ja) * | 1981-10-16 | 1983-04-26 | Nec Corp | 3−5族化合物半導体の結晶成長方法 |
JPS58161999A (ja) * | 1982-03-19 | 1983-09-26 | Hitachi Cable Ltd | 半絶縁性砒化ガリウム単結晶の製造方法 |
JPS6046998A (ja) * | 1983-08-26 | 1985-03-14 | Sumitomo Electric Ind Ltd | 単結晶引上方法及びそのための装置 |
-
1985
- 1985-05-29 IT IT8520936A patent/IT1207497B/it active
-
1986
- 1986-05-27 DE DE8686304008T patent/DE3683547D1/de not_active Expired - Fee Related
- 1986-05-27 EP EP86304008A patent/EP0206541B1/en not_active Expired - Lifetime
- 1986-05-28 US US06/867,514 patent/US4776971A/en not_active Expired - Fee Related
- 1986-05-28 CA CA000510229A patent/CA1277576C/en not_active Expired - Fee Related
- 1986-05-29 JP JP61122408A patent/JPS6212700A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
IT8520936A0 (it) | 1985-05-29 |
EP0206541A3 (en) | 1988-12-14 |
EP0206541A2 (en) | 1986-12-30 |
EP0206541B1 (en) | 1992-01-22 |
JPS6212700A (ja) | 1987-01-21 |
DE3683547D1 (de) | 1992-03-05 |
CA1277576C (en) | 1990-12-11 |
US4776971A (en) | 1988-10-11 |
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