KR870004498A - 실리콘 기판의 제법 - Google Patents

실리콘 기판의 제법 Download PDF

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Publication number
KR870004498A
KR870004498A KR1019860007019A KR860007019A KR870004498A KR 870004498 A KR870004498 A KR 870004498A KR 1019860007019 A KR1019860007019 A KR 1019860007019A KR 860007019 A KR860007019 A KR 860007019A KR 870004498 A KR870004498 A KR 870004498A
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KR
South Korea
Prior art keywords
silicon substrate
manufacturing
oxygen concentration
crystal growth
growth rate
Prior art date
Application number
KR1019860007019A
Other languages
English (en)
Inventor
도시히꼬 스즈끼
야사부로오 가또오
모도노부 후다가미
Original Assignee
오오가 노리오
쏘니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오오가 노리오, 쏘니 가부시기가이샤 filed Critical 오오가 노리오
Publication of KR870004498A publication Critical patent/KR870004498A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

내용 없음

Description

실리콘 기판의 제법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 결정성장속도-산소농도-적층결함밀도의 측정결과를 나타낸 도면.
제2도는 열처리시간, 산소농도 변화의 측정곡선도.
제5도는 본원 발명을 실시하는 결정육성 장치의 일례의 구성도.
도면의 주요부분에 대한 부호의 설명
2 : 석용 도가니 3 : Si 융액(融液) 7 : 자장발생수단 10 : 결정체

Claims (1)

  1. 결정성장 속도를 1.2mm/분 이상으로 하여 산소농도를 1.8 ×1018cm-3이상의 실리콘 기판을 얻는 것을 특징으로 하는 실리콘 기판의 제법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860007019A 1985-10-31 1986-08-25 실리콘 기판의 제법 KR870004498A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60244562A JPS62105998A (ja) 1985-10-31 1985-10-31 シリコン基板の製法
JP244562 1985-10-31

Publications (1)

Publication Number Publication Date
KR870004498A true KR870004498A (ko) 1987-05-09

Family

ID=17120560

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860007019A KR870004498A (ko) 1985-10-31 1986-08-25 실리콘 기판의 제법

Country Status (14)

Country Link
JP (1) JPS62105998A (ko)
KR (1) KR870004498A (ko)
CN (1) CN1016191B (ko)
AT (1) ATA289086A (ko)
AU (1) AU597599B2 (ko)
CA (1) CA1336061C (ko)
DE (1) DE3637006A1 (ko)
DK (1) DK518486A (ko)
FR (1) FR2589489B1 (ko)
GB (1) GB2182262B (ko)
IT (1) IT1198454B (ko)
MY (1) MY100449A (ko)
NL (1) NL8602738A (ko)
SE (1) SE8604627L (ko)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
JP2613498B2 (ja) * 1991-03-15 1997-05-28 信越半導体株式会社 Ｓｉ単結晶ウエーハの熱処理方法
JPH07247197A (ja) * 1994-03-09 1995-09-26 Fujitsu Ltd 半導体装置とその製造方法
JP3443822B2 (ja) * 1996-03-27 2003-09-08 信越半導体株式会社 シリコン単結晶の製造方法
DE19711922A1 (de) * 1997-03-21 1998-09-24 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zum Ziehen eines Einkristalls
DE69841714D1 (de) 1997-04-09 2010-07-22 Memc Electronic Materials Silicium mit niedriger Fehlerdichte und idealem Sauerstoffniederschlag
MY127594A (en) 1997-04-09 2006-12-29 Memc Electronic Materials Low defect density, vacancy dominated silicon
US6379642B1 (en) 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
JPH11268987A (ja) * 1998-03-20 1999-10-05 Shin Etsu Handotai Co Ltd シリコン単結晶およびその製造方法
EP1090166B1 (en) 1998-06-26 2002-03-27 MEMC Electronic Materials, Inc. Process for growth of defect free silicon crystals of arbitrarily large diameters
EP1114454A2 (en) 1998-09-02 2001-07-11 MEMC Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
EP1125008B1 (en) 1998-10-14 2003-06-18 MEMC Electronic Materials, Inc. Thermally annealed, low defect density single crystal silicon
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
CN1313651C (zh) 1998-10-14 2007-05-02 Memc电子材料有限公司 基本无生长缺陷的外延硅片
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
KR100805518B1 (ko) 2001-01-26 2008-02-20 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 산화 유도된 적층 결함을 실질적으로 포함하지 않는베이컨시 지배 코어를 갖는 낮은 결함 밀도의 실리콘
DE10103691A1 (de) * 2001-01-26 2002-08-08 Crystal Growing Systems Gmbh Elektrische Energieversorgung für eine elektrische Heizung
MY157902A (en) 2006-05-19 2016-08-15 Memc Electronic Materials Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth
JP5974978B2 (ja) 2013-05-29 2016-08-23 信越半導体株式会社 シリコン単結晶製造方法
CN105780113B (zh) * 2016-03-10 2017-11-28 江西赛维Ldk太阳能高科技有限公司 一种表征晶体硅生长界面和生长速度的方法
CN112095154B (zh) * 2019-06-18 2021-05-14 上海新昇半导体科技有限公司 一种半导体晶体生长装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5556098A (en) * 1978-10-17 1980-04-24 Chiyou Lsi Gijutsu Kenkyu Kumiai Method and apparatus for producing si single crystal rod
EP0042901B1 (fr) * 1980-06-26 1984-10-31 International Business Machines Corporation Procédé pour contrôler la teneur en oxygène des barreaux de silicium tirés selon la méthode de Czochralski
GB2084046B (en) * 1980-08-27 1984-07-25 Secr Defence Method and apparatus for crystal growth
CA1191075A (en) * 1980-12-29 1985-07-30 Roger A. Frederick Method for regulating concentration and distribution of oxygen in czochralski grown silicon
NL8102102A (nl) * 1981-04-29 1982-11-16 Philips Nv Werkwijze voor het optrekken van een siliciumstaaf en halfgeleiderinrichting vervaardigd uit de siliciumstaaf.
JPH0244799B2 (ja) * 1981-10-26 1990-10-05 Sony Corp Ketsushoseichohoho
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
JPS6027684A (ja) * 1983-07-26 1985-02-12 Fujitsu Ltd 単結晶製造装置
JPS6033289A (ja) * 1983-07-29 1985-02-20 Toshiba Corp シリコン単結晶の製造方法
JPS6094722A (ja) * 1983-08-16 1985-05-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション シリコン・ウエハ
JPS6153187A (ja) * 1984-08-24 1986-03-17 Sony Corp 単結晶成長装置
IT1207497B (it) * 1985-05-29 1989-05-25 Montedison Spa Monocristalli di arseniuro di gallio a bassa densita' di dislocazioni e di elevata purezza.

Also Published As

Publication number Publication date
AU597599B2 (en) 1990-06-07
DK518486D0 (da) 1986-10-30
CN86106346A (zh) 1987-06-17
FR2589489B1 (fr) 1994-06-10
FR2589489A1 (fr) 1987-05-07
SE8604627D0 (sv) 1986-10-30
CN1016191B (zh) 1992-04-08
AU6455086A (en) 1987-05-07
CA1336061C (en) 1995-06-27
SE8604627L (sv) 1987-05-01
DK518486A (da) 1987-05-01
GB2182262B (en) 1989-09-27
IT8648592A0 (it) 1986-10-28
GB8626074D0 (en) 1986-12-03
GB2182262A (en) 1987-05-13
NL8602738A (nl) 1987-05-18
MY100449A (en) 1990-10-15
IT1198454B (it) 1988-12-21
JPS62105998A (ja) 1987-05-16
DE3637006A1 (de) 1987-05-07
ATA289086A (de) 1996-01-15

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E902 Notification of reason for refusal
E601 Decision to refuse application