DE68929069D1 - Verfahren zur thermischen Strukturierung von Halbleitersubstraten - Google Patents

Verfahren zur thermischen Strukturierung von Halbleitersubstraten

Info

Publication number
DE68929069D1
DE68929069D1 DE68929069T DE68929069T DE68929069D1 DE 68929069 D1 DE68929069 D1 DE 68929069D1 DE 68929069 T DE68929069 T DE 68929069T DE 68929069 T DE68929069 T DE 68929069T DE 68929069 D1 DE68929069 D1 DE 68929069D1
Authority
DE
Germany
Prior art keywords
semiconductor substrates
thermal structuring
structuring
thermal
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68929069T
Other languages
English (en)
Other versions
DE68929069T2 (de
Inventor
John E Epler
David W Treat
Thomas L Paoli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE68929069D1 publication Critical patent/DE68929069D1/de
Publication of DE68929069T2 publication Critical patent/DE68929069T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/048—Energy beam assisted EPI growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/071—Heating, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/094—Laser beam treatment of compound devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE68929069T 1988-10-13 1989-10-12 Verfahren zur thermischen Strukturierung von Halbleitersubstraten Expired - Fee Related DE68929069T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/257,498 US4962057A (en) 1988-10-13 1988-10-13 Method of in situ photo induced evaporation enhancement of compound thin films during or after epitaxial growth

Publications (2)

Publication Number Publication Date
DE68929069D1 true DE68929069D1 (de) 1999-10-14
DE68929069T2 DE68929069T2 (de) 2000-02-10

Family

ID=22976545

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68929069T Expired - Fee Related DE68929069T2 (de) 1988-10-13 1989-10-12 Verfahren zur thermischen Strukturierung von Halbleitersubstraten

Country Status (4)

Country Link
US (1) US4962057A (de)
EP (1) EP0364259B1 (de)
JP (1) JP2957607B2 (de)
DE (1) DE68929069T2 (de)

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* Cited by examiner, † Cited by third party
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US5089862A (en) * 1986-05-12 1992-02-18 Warner Jr Raymond M Monocrystalline three-dimensional integrated circuit
US5273932A (en) * 1988-08-15 1993-12-28 Nippon Telegraph & Telephone Corp. Method for forming semiconductor thin films where an argon laser is used to suppress crystal growth
CA2008379C (en) * 1989-01-24 1993-08-31 Hajime Sakiyama Semiconductor lasers
US5563094A (en) * 1989-03-24 1996-10-08 Xerox Corporation Buried reverse bias junction configurations in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth and device structures utilizing the same
US5436192A (en) * 1989-03-24 1995-07-25 Xerox Corporation Method of fabricating semiconductor structures via photo induced evaporation enhancement during in situ epitaxial growth
US5362973A (en) * 1990-06-25 1994-11-08 Xerox Corporation Quantum fabricated via photo induced evaporation enhancement during in situ epitaxial growth
US5147680A (en) * 1990-11-13 1992-09-15 Paul Slysh Laser assisted masking process
US5114877A (en) * 1991-01-08 1992-05-19 Xerox Corporation Method of fabricating quantum wire semiconductor laser via photo induced evaporation enhancement during in situ epitaxial growth
US5138625A (en) * 1991-01-08 1992-08-11 Xerox Corporation Quantum wire semiconductor laser
US5175740A (en) * 1991-07-24 1992-12-29 Gte Laboratories Incorporated Semiconductor laser and method of fabricating same
US5204523A (en) * 1991-08-19 1993-04-20 Xerox Corporation Method for spot position control in an optical output device employing a variable wavelength light source and an optical beam deflecting element
US5322986A (en) * 1992-04-06 1994-06-21 Eastman Kodak Company Methods for preparing polymer stripe waveguides and polymer stripe waveguides prepared thereby
US5264108A (en) * 1992-09-08 1993-11-23 The United States Of America As Represented By The United States Department Of Energy Laser patterning of laminated structures for electroplating
JPH07105340B2 (ja) * 1992-10-06 1995-11-13 名古屋大学長 完全無欠陥表面を作成する方法
US5461412A (en) * 1993-07-23 1995-10-24 Xerox Corporation Method and apparatus for actively correcting curvature in the scan of an optical output device
US6306668B1 (en) * 1999-09-23 2001-10-23 Ut-Battelle, Llc Control method and system for use when growing thin-films on semiconductor-based materials
JP2002261377A (ja) * 2001-02-27 2002-09-13 Hitachi Ltd 光モジュール
US6955725B2 (en) 2002-08-15 2005-10-18 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
JP4241051B2 (ja) * 2003-01-08 2009-03-18 シャープ株式会社 Ｉｉｉ−ｖ族化合物半導体層の成長方法および半導体発光素子の製造方法
US6818249B2 (en) * 2003-03-03 2004-11-16 Micron Technology, Inc. Reactors, systems with reaction chambers, and methods for depositing materials onto micro-device workpieces
US7282239B2 (en) * 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
JP4849829B2 (ja) * 2005-05-15 2012-01-11 株式会社ソニー・コンピュータエンタテインメント センタ装置
KR101708867B1 (ko) * 2009-05-01 2017-02-21 고쿠리츠다이가쿠호우진 도쿄다이가쿠 화합물 반도체의 퇴적 방법 및 장치
KR102016927B1 (ko) * 2017-11-01 2019-10-21 한국기초과학지원연구원 원자층 연마 방법 및 이를 위한 연마 장치
US20220238337A1 (en) * 2021-01-22 2022-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Laser-Assisted Epitaxy and Etching for Manufacturing Integrated Circuits

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2214934B1 (de) * 1973-01-18 1978-03-24 Thomson Csf
US4044222A (en) * 1976-01-16 1977-08-23 Western Electric Company, Inc. Method of forming tapered apertures in thin films with an energy beam
JPS5679449A (en) * 1979-11-30 1981-06-30 Mitsubishi Electric Corp Production of semiconductor device
US4388517A (en) * 1980-09-22 1983-06-14 Texas Instruments Incorporated Sublimation patterning process
GB2102202A (en) * 1981-07-17 1983-01-26 Westinghouse Brake & Signal Semiconductor device passivation
JPS59169125A (ja) * 1983-03-16 1984-09-25 Ushio Inc 半導体ウエハ−の加熱方法
JPS6014441A (ja) * 1983-07-04 1985-01-25 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS6053915A (ja) * 1983-09-05 1985-03-28 Olympus Optical Co Ltd 倒立型光学顕微鏡
US4645687A (en) * 1983-11-10 1987-02-24 At&T Laboratories Deposition of III-V semiconductor materials
US4624736A (en) * 1984-07-24 1986-11-25 The United States Of America As Represented By The United States Department Of Energy Laser/plasma chemical processing of substrates
JPH0712102B2 (ja) * 1985-06-14 1995-02-08 株式会社日立製作所 半導体レ−ザ装置
GB8516984D0 (en) * 1985-07-04 1985-08-07 British Telecomm Etching method
JPS62140485A (ja) * 1985-12-16 1987-06-24 Hitachi Ltd 半導体構造体およびその製造方法
JPS62262433A (ja) * 1986-05-09 1987-11-14 Hitachi Ltd 表面処理方法
JPS6353254A (ja) * 1986-08-21 1988-03-07 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 乾式付着方法
US4843031A (en) * 1987-03-17 1989-06-27 Matsushita Electric Industrial Co., Ltd. Method of fabricating compound semiconductor laser using selective irradiation
JPH073909B2 (ja) * 1987-09-08 1995-01-18 三菱電機株式会社 半導体レーザの製造方法
US4843030A (en) * 1987-11-30 1989-06-27 Eaton Corporation Semiconductor processing by a combination of photolytic, pyrolytic and catalytic processes

Also Published As

Publication number Publication date
DE68929069T2 (de) 2000-02-10
EP0364259B1 (de) 1999-09-08
US4962057A (en) 1990-10-09
JP2957607B2 (ja) 1999-10-06
EP0364259A3 (de) 1990-10-24
EP0364259A2 (de) 1990-04-18
JPH02144910A (ja) 1990-06-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee