DE3888736D1 - Verfahren zur Epitaxieabscheidung von Silizium. - Google Patents
Verfahren zur Epitaxieabscheidung von Silizium.Info
- Publication number
- DE3888736D1 DE3888736D1 DE88305650T DE3888736T DE3888736D1 DE 3888736 D1 DE3888736 D1 DE 3888736D1 DE 88305650 T DE88305650 T DE 88305650T DE 3888736 T DE3888736 T DE 3888736T DE 3888736 D1 DE3888736 D1 DE 3888736D1
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- epitaxial deposition
- epitaxial
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/065,945 US4846102A (en) | 1987-06-24 | 1987-06-24 | Reaction chambers for CVD systems |
US07/108,771 US4828224A (en) | 1987-10-15 | 1987-10-15 | Chemical vapor deposition system |
US07/167,347 US4874464A (en) | 1988-03-14 | 1988-03-14 | Process for epitaxial deposition of silicon |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3888736D1 true DE3888736D1 (de) | 1994-05-05 |
DE3888736T2 DE3888736T2 (de) | 1994-11-17 |
Family
ID=27370890
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19883888736 Expired - Lifetime DE3888736T2 (de) | 1987-06-24 | 1988-06-21 | Verfahren zur Epitaxieabscheidung von Silizium. |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP0296804B1 (de) |
DE (1) | DE3888736T2 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3094816B2 (ja) * | 1994-10-25 | 2000-10-03 | 信越半導体株式会社 | 薄膜の成長方法 |
JPH08236462A (ja) * | 1995-03-01 | 1996-09-13 | Shin Etsu Handotai Co Ltd | 気相成長方法 |
US20070122997A1 (en) | 1998-02-19 | 2007-05-31 | Silicon Genesis Corporation | Controlled process and resulting device |
US6162705A (en) | 1997-05-12 | 2000-12-19 | Silicon Genesis Corporation | Controlled cleavage process and resulting device using beta annealing |
US6287941B1 (en) | 1999-04-21 | 2001-09-11 | Silicon Genesis Corporation | Surface finishing of SOI substrates using an EPI process |
US6738683B1 (en) | 2000-09-05 | 2004-05-18 | Cxe Equipment Services, Llc | Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor |
US9362439B2 (en) | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
US7811900B2 (en) | 2006-09-08 | 2010-10-12 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a thick layer transfer process |
US8993410B2 (en) | 2006-09-08 | 2015-03-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
US8293619B2 (en) | 2008-08-28 | 2012-10-23 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
US8330126B2 (en) | 2008-08-25 | 2012-12-11 | Silicon Genesis Corporation | Race track configuration and method for wafering silicon solar substrates |
US8329557B2 (en) | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
DE102012101438B4 (de) | 2012-02-23 | 2023-07-13 | Aixtron Se | Verfahren zum Reinigen einer Prozesskammer eines CVD-Reaktors |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3177100A (en) * | 1963-09-09 | 1965-04-06 | Rca Corp | Depositing epitaxial layer of silicon from a vapor mixture of sih4 and h3 |
US3424629A (en) * | 1965-12-13 | 1969-01-28 | Ibm | High capacity epitaxial apparatus and method |
-
1988
- 1988-06-21 DE DE19883888736 patent/DE3888736T2/de not_active Expired - Lifetime
- 1988-06-21 EP EP19880305650 patent/EP0296804B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE3888736T2 (de) | 1994-11-17 |
EP0296804A3 (en) | 1989-11-08 |
EP0296804B1 (de) | 1994-03-30 |
EP0296804A2 (de) | 1988-12-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: ASM AMERICA, INC. (N.D.GES.DES STAATES DELAWARE), |