DE3888736D1 - Verfahren zur Epitaxieabscheidung von Silizium. - Google Patents

Verfahren zur Epitaxieabscheidung von Silizium.

Info

Publication number
DE3888736D1
DE3888736D1 DE88305650T DE3888736T DE3888736D1 DE 3888736 D1 DE3888736 D1 DE 3888736D1 DE 88305650 T DE88305650 T DE 88305650T DE 3888736 T DE3888736 T DE 3888736T DE 3888736 D1 DE3888736 D1 DE 3888736D1
Authority
DE
Germany
Prior art keywords
silicon
epitaxial deposition
epitaxial
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE88305650T
Other languages
English (en)
Other versions
DE3888736T2 (de
Inventor
Dennis Lee Goodwin
Mark Richard Hawkins
Wayne L Johnson
Aage Olsen
Mcdonald Robinson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASM America Inc
Original Assignee
Advanced Semiconductor Materials America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/065,945 external-priority patent/US4846102A/en
Priority claimed from US07/108,771 external-priority patent/US4828224A/en
Priority claimed from US07/167,347 external-priority patent/US4874464A/en
Application filed by Advanced Semiconductor Materials America Inc filed Critical Advanced Semiconductor Materials America Inc
Publication of DE3888736D1 publication Critical patent/DE3888736D1/de
Application granted granted Critical
Publication of DE3888736T2 publication Critical patent/DE3888736T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
DE19883888736 1987-06-24 1988-06-21 Verfahren zur Epitaxieabscheidung von Silizium. Expired - Lifetime DE3888736T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/065,945 US4846102A (en) 1987-06-24 1987-06-24 Reaction chambers for CVD systems
US07/108,771 US4828224A (en) 1987-10-15 1987-10-15 Chemical vapor deposition system
US07/167,347 US4874464A (en) 1988-03-14 1988-03-14 Process for epitaxial deposition of silicon

Publications (2)

Publication Number Publication Date
DE3888736D1 true DE3888736D1 (de) 1994-05-05
DE3888736T2 DE3888736T2 (de) 1994-11-17

Family

ID=27370890

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19883888736 Expired - Lifetime DE3888736T2 (de) 1987-06-24 1988-06-21 Verfahren zur Epitaxieabscheidung von Silizium.

Country Status (2)

Country Link
EP (1) EP0296804B1 (de)
DE (1) DE3888736T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3094816B2 (ja) * 1994-10-25 2000-10-03 信越半導体株式会社 薄膜の成長方法
JPH08236462A (ja) * 1995-03-01 1996-09-13 Shin Etsu Handotai Co Ltd 気相成長方法
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6162705A (en) 1997-05-12 2000-12-19 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
US6287941B1 (en) 1999-04-21 2001-09-11 Silicon Genesis Corporation Surface finishing of SOI substrates using an EPI process
US6738683B1 (en) 2000-09-05 2004-05-18 Cxe Equipment Services, Llc Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
DE102012101438B4 (de) 2012-02-23 2023-07-13 Aixtron Se Verfahren zum Reinigen einer Prozesskammer eines CVD-Reaktors

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3177100A (en) * 1963-09-09 1965-04-06 Rca Corp Depositing epitaxial layer of silicon from a vapor mixture of sih4 and h3
US3424629A (en) * 1965-12-13 1969-01-28 Ibm High capacity epitaxial apparatus and method

Also Published As

Publication number Publication date
DE3888736T2 (de) 1994-11-17
EP0296804A3 (en) 1989-11-08
EP0296804B1 (de) 1994-03-30
EP0296804A2 (de) 1988-12-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: ASM AMERICA, INC. (N.D.GES.DES STAATES DELAWARE),