DE69009719D1 - Verfahren zur Züchtung von Antimon-dotierten Silizium-Einkristallen. - Google Patents

Verfahren zur Züchtung von Antimon-dotierten Silizium-Einkristallen.

Info

Publication number
DE69009719D1
DE69009719D1 DE69009719T DE69009719T DE69009719D1 DE 69009719 D1 DE69009719 D1 DE 69009719D1 DE 69009719 T DE69009719 T DE 69009719T DE 69009719 T DE69009719 T DE 69009719T DE 69009719 D1 DE69009719 D1 DE 69009719D1
Authority
DE
Germany
Prior art keywords
antimony
growing
silicon single
doped silicon
single crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69009719T
Other languages
English (en)
Other versions
DE69009719T2 (de
Inventor
Hidetoshi Seki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69009719D1 publication Critical patent/DE69009719D1/de
Publication of DE69009719T2 publication Critical patent/DE69009719T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69009719T 1989-11-24 1990-11-16 Verfahren zur Züchtung von Antimon-dotierten Silizium-Einkristallen. Expired - Fee Related DE69009719T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1305091A JPH0777999B2 (ja) 1989-11-24 1989-11-24 アンチモンドープ単結晶シリコンの育成方法

Publications (2)

Publication Number Publication Date
DE69009719D1 true DE69009719D1 (de) 1994-07-14
DE69009719T2 DE69009719T2 (de) 1995-01-19

Family

ID=17940997

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69009719T Expired - Fee Related DE69009719T2 (de) 1989-11-24 1990-11-16 Verfahren zur Züchtung von Antimon-dotierten Silizium-Einkristallen.

Country Status (4)

Country Link
US (1) US5423283A (de)
EP (1) EP0435440B1 (de)
JP (1) JPH0777999B2 (de)
DE (1) DE69009719T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2795030B2 (ja) * 1992-01-29 1998-09-10 信越半導体株式会社 単結晶シリコン棒の製造方法
JP2760932B2 (ja) * 1993-03-29 1998-06-04 科学技術振興事業団 単結晶引上げ用Ｓｉ融液の酸素濃度制御方法
EP0625595B1 (de) * 1993-03-29 2001-09-19 Research Development Corporation Of Japan Regulierung der Sauerstoffkonzentration in einem Einkristall, der aus einer ein Gruppe V Element enthaltenden Schmelze gezogenen wird.
US5477805A (en) * 1993-12-28 1995-12-26 Research Development Corporation Of Japan Preparation of silicon melt for use in pull method of manufacturing single crystal
EP0733726A3 (de) * 1995-03-24 1997-05-02 Koji Izunome Züchtung von Silizium-Einkristall mit einer einheitlichen Verteilung der Dotierung in der Längs- oder Radialrichtung
US5904768A (en) * 1996-10-15 1999-05-18 Memc Electronic Materials, Inc. Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
US6013872A (en) * 1997-04-25 2000-01-11 Bayer Ag Directionally solidified, multicrystalline silicon, a process for the production thereof and its use, and solar cells containing this silicon and a process for the production thereof
US6019838A (en) * 1998-01-05 2000-02-01 Memc Electronic Materials, Inc. Crystal growing apparatus with melt-doping facility
TW538445B (en) * 1998-04-07 2003-06-21 Shinetsu Handotai Kk Silicon seed crystal and method for producing silicon single crystal
JP4755740B2 (ja) * 1998-08-18 2011-08-24 株式会社Ｓｕｍｃｏ シリコン単結晶の育成方法
US6491752B1 (en) * 1999-07-16 2002-12-10 Sumco Oregon Corporation Enhanced n-type silicon material for epitaxial wafer substrate and method of making same
US6488768B1 (en) 2001-07-17 2002-12-03 Seh America, Inc. Method and apparatus for treating discharge gas from a Czochralski crystal growing chamber utilizing water spray
CN109576779A (zh) * 2019-02-18 2019-04-05 衢州晶哲电子材料有限公司 一种提高重掺锑硅单晶氧含量的生产工艺及其生产设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544292C3 (de) * 1966-06-13 1976-01-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen stabförmiger Siliciumeinkristalle mit über die gesamte Stablänge homogener Antimondotierung
US4040895A (en) * 1975-10-22 1977-08-09 International Business Machines Corporation Control of oxygen in silicon crystals
DE2548046C3 (de) * 1975-10-27 1982-12-02 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum Ziehen einkristalliner Siliciumstäbe
DE2638303A1 (de) * 1976-08-25 1978-03-02 Wacker Chemitronic Verfahren zur herstellung reinster einkristalle, hochschmelzender, oxidischer substanzen nach dem czochralski-tiegelziehverfahren
DE2758888C2 (de) * 1977-12-30 1983-09-22 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung reinster Siliciumeinkristalle
DE3069547D1 (en) * 1980-06-26 1984-12-06 Ibm Process for controlling the oxygen content of silicon ingots pulled by the czochralski method
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
JPS5983996A (ja) * 1982-11-05 1984-05-15 Nec Corp 引上げ法によるシリコン単結晶インゴツトの製造方法
JPS59232995A (ja) * 1983-06-10 1984-12-27 Sumitomo Electric Ind Ltd 引上単結晶の冷却方法
JPS61227986A (ja) * 1985-03-30 1986-10-11 Shin Etsu Handotai Co Ltd 単結晶シリコン棒の製造方法
JPS63242991A (ja) * 1987-03-31 1988-10-07 Shin Etsu Handotai Co Ltd 結晶径制御方法
JPS63260891A (ja) * 1987-04-17 1988-10-27 Hitachi Ltd シリコン単結晶の製造方法

Also Published As

Publication number Publication date
US5423283A (en) 1995-06-13
EP0435440A1 (de) 1991-07-03
JPH03164495A (ja) 1991-07-16
DE69009719T2 (de) 1995-01-19
EP0435440B1 (de) 1994-06-08
JPH0777999B2 (ja) 1995-08-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee