DE68921442D1 - Vorrichtung zur Ziehung von Einkristallstangen. - Google Patents

Vorrichtung zur Ziehung von Einkristallstangen.

Info

Publication number
DE68921442D1
DE68921442D1 DE68921442T DE68921442T DE68921442D1 DE 68921442 D1 DE68921442 D1 DE 68921442D1 DE 68921442 T DE68921442 T DE 68921442T DE 68921442 T DE68921442 T DE 68921442T DE 68921442 D1 DE68921442 D1 DE 68921442D1
Authority
DE
Germany
Prior art keywords
single crystal
crystal rods
pulling single
pulling
rods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68921442T
Other languages
English (en)
Other versions
DE68921442T2 (de
Inventor
Atsushi Iwasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE68921442D1 publication Critical patent/DE68921442D1/de
Application granted granted Critical
Publication of DE68921442T2 publication Critical patent/DE68921442T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE1989621442 1988-12-12 1989-12-12 Vorrichtung zur Ziehung von Einkristallstangen. Expired - Fee Related DE68921442T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63311857A JP2640683B2 (ja) 1988-12-12 1988-12-12 単結晶棒の引上げ装置

Publications (2)

Publication Number Publication Date
DE68921442D1 true DE68921442D1 (de) 1995-04-06
DE68921442T2 DE68921442T2 (de) 1995-11-09

Family

ID=18022255

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1989621442 Expired - Fee Related DE68921442T2 (de) 1988-12-12 1989-12-12 Vorrichtung zur Ziehung von Einkristallstangen.

Country Status (3)

Country Link
EP (1) EP0373899B1 (de)
JP (1) JP2640683B2 (de)
DE (1) DE68921442T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0777994B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の酸素濃度コントロール方法及び装置
JPH0777995B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の比抵抗コントロール方法
JP2509477B2 (ja) * 1991-04-20 1996-06-19 コマツ電子金属株式会社 結晶成長方法及び結晶成長装置
US5373805A (en) * 1991-10-17 1994-12-20 Shin-Etsu Handotai Co., Ltd. Single crystal pulling apparatus
JP2827789B2 (ja) * 1993-02-23 1998-11-25 信越半導体株式会社 単結晶引上げ装置用不活性ガス整流・吹付け装置
US5588993A (en) * 1995-07-25 1996-12-31 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
JP3687166B2 (ja) * 1995-12-28 2005-08-24 信越半導体株式会社 単結晶引上げ装置の整流筒昇降方法、及び単結晶引上げ装置の整流筒昇降機構
JP2001240492A (ja) * 2000-02-29 2001-09-04 Komatsu Electronic Metals Co Ltd リチャージ・追いチャージを円滑に行うｃｚ法単結晶引上げ装置
JP4103593B2 (ja) * 2001-02-28 2008-06-18 信越半導体株式会社 固形状多結晶原料のリチャージ管及びそれを用いた単結晶の製造方法
CN101914806B (zh) * 2010-09-07 2014-05-07 王楚雯 具有改进气路的定向凝固炉
CN101914805B (zh) * 2010-09-07 2013-03-20 王楚雯 具有改进坩埚盖部的定向凝固炉
JP5741528B2 (ja) * 2012-06-13 2015-07-01 信越半導体株式会社 原料充填方法及び単結晶の製造方法
JP5857945B2 (ja) 2012-11-20 2016-02-10 信越半導体株式会社 原料充填方法および単結晶の製造方法
JP6390579B2 (ja) * 2015-10-19 2018-09-19 信越半導体株式会社 単結晶の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2548046C3 (de) * 1975-10-27 1982-12-02 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum Ziehen einkristalliner Siliciumstäbe
JPS54121283A (en) * 1978-03-15 1979-09-20 Hitachi Ltd Manufacture of silicon single crystal by pulling method and apparatus therefor
JPS5715076A (en) * 1980-06-27 1982-01-26 Topy Ind Ltd Crawler and assembling method of the same
JPS5930792A (ja) * 1982-08-10 1984-02-18 Toshiba Corp 単結晶育成装置
DE3306049A1 (de) * 1983-02-22 1984-08-23 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zum ziehen eines einkristalls aus einem tiegel
US4981549A (en) * 1988-02-23 1991-01-01 Mitsubishi Kinzoku Kabushiki Kaisha Method and apparatus for growing silicon crystals

Also Published As

Publication number Publication date
EP0373899A3 (de) 1991-05-02
JPH02157180A (ja) 1990-06-15
EP0373899B1 (de) 1995-03-01
JP2640683B2 (ja) 1997-08-13
EP0373899A2 (de) 1990-06-20
DE68921442T2 (de) 1995-11-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee