DE3865628D1 - Einrichtung zur zuechtung von kristallen. - Google Patents

Einrichtung zur zuechtung von kristallen.

Info

Publication number
DE3865628D1
DE3865628D1 DE8888118267T DE3865628T DE3865628D1 DE 3865628 D1 DE3865628 D1 DE 3865628D1 DE 8888118267 T DE8888118267 T DE 8888118267T DE 3865628 T DE3865628 T DE 3865628T DE 3865628 D1 DE3865628 D1 DE 3865628D1
Authority
DE
Germany
Prior art keywords
crystal growing
growing device
crystal
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888118267T
Other languages
English (en)
Inventor
Naoki Ono
Michio Kida
Yoshiaki Arai
Kensho Sahira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62277895A external-priority patent/JPH0723277B2/ja
Priority claimed from JP62277894A external-priority patent/JPH0764672B2/ja
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Application granted granted Critical
Publication of DE3865628D1 publication Critical patent/DE3865628D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J4/00—Feed or outlet devices; Feed or outlet control devices
    • B01J4/001—Feed or outlet devices as such, e.g. feeding tubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/912—Replenishing liquid precursor, other than a moving zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
DE8888118267T 1987-11-02 1988-11-02 Einrichtung zur zuechtung von kristallen. Expired - Lifetime DE3865628D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62277895A JPH0723277B2 (ja) 1987-11-02 1987-11-02 結晶育成装置
JP62277894A JPH0764672B2 (ja) 1987-11-02 1987-11-02 結晶育成装置

Publications (1)

Publication Number Publication Date
DE3865628D1 true DE3865628D1 (de) 1991-11-21

Family

ID=26552622

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888118267T Expired - Lifetime DE3865628D1 (de) 1987-11-02 1988-11-02 Einrichtung zur zuechtung von kristallen.

Country Status (3)

Country Link
US (1) US5080873A (de)
EP (1) EP0315156B1 (de)
DE (1) DE3865628D1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU632886B2 (en) * 1990-01-25 1993-01-14 Ebara Corporation Melt replenishment system for dendritic web growth
US5316429A (en) * 1992-03-24 1994-05-31 Heat And Control, Inc. Bin loading and emptying of crops having a rounded rollable mass
JP3478406B2 (ja) * 1992-09-09 2003-12-15 アルベマール・コーポレーシヨン 粒状物質の供給装置
JP2935337B2 (ja) * 1994-11-21 1999-08-16 信越半導体株式会社 粒状原料の供給装置およびその供給方法
US5762491A (en) * 1995-10-31 1998-06-09 Memc Electronic Materials, Inc. Solid material delivery system for a furnace
TW503265B (en) * 1995-12-28 2002-09-21 Mitsubishi Material Silicon Single crystal pulling apparatus
TW429273B (en) * 1996-02-08 2001-04-11 Shinetsu Handotai Kk Method for feeding garnular silicon material, feed pipe used in the method, and method of manufacturing a silicon monocrystal
US6179914B1 (en) * 1999-02-02 2001-01-30 Seh America, Inc. Dopant delivery system and method
DE10204178B4 (de) * 2002-02-01 2008-01-03 Siltronic Ag Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Halbleitermaterial
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
KR20080000586A (ko) * 2005-03-25 2008-01-02 캐터리스트 서비스즈, 아이엔씨. 촉매 및/또는 그 외의 다른 미립자를 포함하는 충진 튜브
US8025472B2 (en) * 2007-06-01 2011-09-27 Catalyst Services, Inc. Catalyst loading system
DE102007061704A1 (de) 2007-12-19 2009-09-10 Schott Ag Verfahren zur Herstellung eines ein- oder polykristallinen Materials
EP2072645B2 (de) 2007-12-19 2014-12-24 Schott AG Verfahren zur Herstellung eines monokristallinen oder polykristallinen Halbleitermaterials
DE102008022882A1 (de) 2008-05-08 2009-11-05 Schott Ag Verfahren und Vorrichtung zum Kristallisieren eines Halbleitermaterials, inbesondere von Silizium
TW201012978A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Apparatus and method of use for a casting system with independent melting and solidification
JP5761491B2 (ja) 2010-12-24 2015-08-12 富士ゼロックス株式会社 色処理装置及び色処理プログラム
US10202704B2 (en) * 2011-04-20 2019-02-12 Gtat Ip Holding Llc Side feed system for Czochralski growth of silicon ingots
JP5840870B2 (ja) * 2011-06-01 2016-01-06 出光興産株式会社 水添石油樹脂ペレットの搬送装置、および、水添石油樹脂ペレットの製造プラント
BR112017023312B1 (pt) 2015-04-29 2022-10-04 Clpros, Llc Aparelho para amortecer e carregar uniformemente um material particulado dentro de um tubo vertical e método para preencher um material particulado em um tubo
CN106757318A (zh) * 2016-12-25 2017-05-31 戚松平 一种用于导模炉的连续加料装置及其加料方法
WO2022103416A1 (en) * 2020-11-11 2022-05-19 Globalwafers Co., Ltd. Methods for forming a single crystal silicon ingot with reduced crucible erosion

Family Cites Families (20)

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US293898A (en) * 1884-02-19 Automatic carrier system
US1234710A (en) * 1917-03-12 1917-07-31 Henry Adams Method of and apparatus for storing and discharging coal, &c.
DE319466C (de) * 1919-05-01 1920-03-05 Johannes Heyn Lagerbehaelter fuer Getreide oder mehlartiges Schuettgut
US1795986A (en) * 1926-07-22 1931-03-10 Adams Coal Machinery Company Coke and coal avalanching chute
US1795988A (en) * 1927-10-14 1931-03-10 Adams Coal Machinery Company Method and apparatus for storing flowable solid material
US1795989A (en) * 1929-02-21 1931-03-10 Adams Coal Machinery Company Apparatus for lowering and mixing flowable solid material
US2634842A (en) * 1947-09-11 1953-04-14 Gen Mills Inc Self-cleaning deadbox
DE1134967B (de) * 1954-03-02 1962-08-23 Siemens Ag Verfahren zum Ziehen eines stabfoermigen kristallinen Halbleiterkoerpers
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
US3265469A (en) * 1964-09-21 1966-08-09 Gen Electric Crystal growing apparatus
SU661966A1 (ru) * 1976-11-23 1980-04-05 Всесоюзный Научно-Исследовательский Институт Монокристаллов И Особо Чистых Химических Веществ "Вниимонокристалл" Устройство дл выт гивани монокристаллов из расплава
DE2821481C2 (de) * 1978-05-17 1985-12-05 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze
DE3027262A1 (de) * 1980-07-18 1982-02-11 Skf Kugellagerfabriken Gmbh, 8720 Schweinfurt Im ziehverfahren hergestellte, duennwandige lagerbuechse
NL8005312A (nl) * 1980-09-24 1982-04-16 Philips Nv Werkwijze voor het vervaardigen van ferriet eenkristallen.
IT1134613B (it) * 1980-12-05 1986-08-13 Redaelli Tecna Spa Macchina perfezionata per la produzione di trefoli
JPS57183392A (en) * 1981-05-01 1982-11-11 Tohoku Metal Ind Ltd Apparatus for preparation of single crystal
JPS5933552A (ja) * 1982-08-18 1984-02-23 Toshiba Corp デ−タ処理装置
CA1261715A (en) * 1984-07-06 1989-09-26 General Signal Corporation Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique
EP0220174A4 (de) * 1985-05-17 1989-06-26 Schumacher Co J C Kontinuierlich gezogene siliziumeinkristallblöcke.
GB8514287D0 (en) * 1985-06-06 1985-07-10 Alcan Int Ltd Feeding particulate material

Also Published As

Publication number Publication date
EP0315156B1 (de) 1991-10-16
EP0315156A1 (de) 1989-05-10
US5080873A (en) 1992-01-14

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