DE69201693D1 - Vorrichtung zur Züchtung von Einkristallen. - Google Patents
Vorrichtung zur Züchtung von Einkristallen.Info
- Publication number
- DE69201693D1 DE69201693D1 DE69201693T DE69201693T DE69201693D1 DE 69201693 D1 DE69201693 D1 DE 69201693D1 DE 69201693 T DE69201693 T DE 69201693T DE 69201693 T DE69201693 T DE 69201693T DE 69201693 D1 DE69201693 D1 DE 69201693D1
- Authority
- DE
- Germany
- Prior art keywords
- single crystals
- growing single
- growing
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP03190274A JP3077273B2 (ja) | 1991-07-30 | 1991-07-30 | 単結晶引上装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69201693D1 true DE69201693D1 (de) | 1995-04-20 |
DE69201693T2 DE69201693T2 (de) | 1995-09-07 |
Family
ID=16255431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69201693T Expired - Lifetime DE69201693T2 (de) | 1991-07-30 | 1992-07-30 | Vorrichtung zur Züchtung von Einkristallen. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5306474A (de) |
EP (1) | EP0525765B1 (de) |
JP (1) | JP3077273B2 (de) |
DE (1) | DE69201693T2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3712668A1 (de) * | 1987-04-14 | 1988-10-27 | Hans J Scheel | Verfahren und vorrichtung zur zuechtung von kristallen nach der czochralski-methode |
GB9412629D0 (en) * | 1994-06-23 | 1994-08-10 | Secr Defence | Improvements in crystal growth |
JP3004563B2 (ja) * | 1995-04-20 | 2000-01-31 | 三菱マテリアル株式会社 | シリコン単結晶の種結晶 |
TW430699B (en) * | 1995-12-27 | 2001-04-21 | Mitsubishi Material Silicon Co | Single crystal pulling apparatus |
TW503265B (en) * | 1995-12-28 | 2002-09-21 | Mitsubishi Material Silicon | Single crystal pulling apparatus |
JP2006069841A (ja) * | 2004-09-02 | 2006-03-16 | Sumco Corp | 磁場印加式シリコン単結晶の引上げ方法 |
DE102005007655A1 (de) * | 2005-02-19 | 2006-08-24 | Sms Demag Ag | Ofenanlage und Verfahren zum Einschmelzen von metallischen oder metallhaltigen Einsatzstoffen |
US7575629B2 (en) * | 2005-11-30 | 2009-08-18 | Basf Catalysts Llc | Pollutant emission control sorbents and methods of manufacture |
US7578869B2 (en) * | 2005-11-30 | 2009-08-25 | Basf Catalysts Llc | Methods of manufacturing bentonite pollution control sorbents |
US7704920B2 (en) * | 2005-11-30 | 2010-04-27 | Basf Catalysts Llc | Pollutant emission control sorbents and methods of manufacture |
US7753992B2 (en) * | 2006-06-19 | 2010-07-13 | Basf Corporation | Methods of manufacturing mercury sorbents and removing mercury from a gas stream |
US7572421B2 (en) * | 2006-06-19 | 2009-08-11 | Basf Catalysts Llc | Mercury sorbents and methods of manufacture and use |
US8906823B2 (en) * | 2007-09-24 | 2014-12-09 | Basf Corporation | Pollutant emission control sorbents and methods of manufacture and use |
US20090081092A1 (en) * | 2007-09-24 | 2009-03-26 | Xiaolin David Yang | Pollutant Emission Control Sorbents and Methods of Manufacture and Use |
US8685351B2 (en) | 2007-09-24 | 2014-04-01 | Basf Corporation | Pollutant emission control sorbents and methods of manufacture and use |
EP3700860A4 (de) | 2017-10-27 | 2021-08-11 | Northern Silicon Inc. | System und verfahren zur herstellung von hochreinem silizium |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2892739A (en) * | 1954-10-01 | 1959-06-30 | Honeywell Regulator Co | Crystal growing procedure |
GB1055059A (en) * | 1963-11-27 | 1967-01-11 | Mullard Ltd | Improvements in crystal growing |
US4200445A (en) * | 1977-04-28 | 1980-04-29 | Corning Glass Works | Method of densifying metal oxides |
US4352784A (en) * | 1979-05-25 | 1982-10-05 | Western Electric Company, Inc. | Double crucible Czochralski crystal growth apparatus |
US4456499A (en) * | 1979-05-25 | 1984-06-26 | At&T Technologies, Inc. | Double crucible Czochralski crystal growth method |
US4246064A (en) * | 1979-07-02 | 1981-01-20 | Western Electric Company, Inc. | Double crucible crystal growing process |
JPS5914440B2 (ja) * | 1981-09-18 | 1984-04-04 | 住友電気工業株式会社 | CaAs単結晶への硼素のド−ピング方法 |
DE3316547C2 (de) * | 1983-05-06 | 1985-05-30 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Kalter Tiegel für das Erschmelzen nichtmetallischer anorganischer Verbindungen |
JPS6259594A (ja) * | 1985-09-11 | 1987-03-16 | Sumitomo Electric Ind Ltd | 結晶の引上げ方法 |
US5053359A (en) * | 1989-03-24 | 1991-10-01 | Pyromatics, Inc. | Cristobalite reinforcement of high silica glass |
CA1305909C (en) * | 1987-06-01 | 1992-08-04 | Michio Kida | Apparatus and process for growing crystals of semiconductor materials |
CA1306407C (en) * | 1987-06-08 | 1992-08-18 | Michio Kida | Apparatus for growing crystals of semiconductor materials |
US5037503A (en) * | 1988-05-31 | 1991-08-06 | Osaka Titanium Co., Ltd. | Method for growing silicon single crystal |
JPH02107587A (ja) * | 1988-10-13 | 1990-04-19 | Mitsubishi Metal Corp | 半導体単結晶育成装置 |
-
1991
- 1991-07-30 JP JP03190274A patent/JP3077273B2/ja not_active Expired - Fee Related
-
1992
- 1992-07-29 US US07/921,896 patent/US5306474A/en not_active Expired - Lifetime
- 1992-07-30 DE DE69201693T patent/DE69201693T2/de not_active Expired - Lifetime
- 1992-07-30 EP EP92113003A patent/EP0525765B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5306474A (en) | 1994-04-26 |
DE69201693T2 (de) | 1995-09-07 |
EP0525765A1 (de) | 1993-02-03 |
JPH0585880A (ja) | 1993-04-06 |
JP3077273B2 (ja) | 2000-08-14 |
EP0525765B1 (de) | 1995-03-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
R071 | Expiry of right |
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