DE69201693T2 - Vorrichtung zur Züchtung von Einkristallen. - Google Patents

Vorrichtung zur Züchtung von Einkristallen.

Info

Publication number
DE69201693T2
DE69201693T2 DE69201693T DE69201693T DE69201693T2 DE 69201693 T2 DE69201693 T2 DE 69201693T2 DE 69201693 T DE69201693 T DE 69201693T DE 69201693 T DE69201693 T DE 69201693T DE 69201693 T2 DE69201693 T2 DE 69201693T2
Authority
DE
Germany
Prior art keywords
single crystals
growing single
growing
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69201693T
Other languages
English (en)
Other versions
DE69201693D1 (de
Inventor
Michio Kida
Yoshiaki Arai
Naoki Ono
Kensho Sahira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Application granted granted Critical
Publication of DE69201693D1 publication Critical patent/DE69201693D1/de
Publication of DE69201693T2 publication Critical patent/DE69201693T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69201693T 1991-07-30 1992-07-30 Vorrichtung zur Züchtung von Einkristallen. Expired - Lifetime DE69201693T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03190274A JP3077273B2 (ja) 1991-07-30 1991-07-30 単結晶引上装置

Publications (2)

Publication Number Publication Date
DE69201693D1 DE69201693D1 (de) 1995-04-20
DE69201693T2 true DE69201693T2 (de) 1995-09-07

Family

ID=16255431

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69201693T Expired - Lifetime DE69201693T2 (de) 1991-07-30 1992-07-30 Vorrichtung zur Züchtung von Einkristallen.

Country Status (4)

Country Link
US (1) US5306474A (de)
EP (1) EP0525765B1 (de)
JP (1) JP3077273B2 (de)
DE (1) DE69201693T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3712668A1 (de) * 1987-04-14 1988-10-27 Hans J Scheel Verfahren und vorrichtung zur zuechtung von kristallen nach der czochralski-methode
GB9412629D0 (en) * 1994-06-23 1994-08-10 Secr Defence Improvements in crystal growth
JP3004563B2 (ja) * 1995-04-20 2000-01-31 三菱マテリアル株式会社 シリコン単結晶の種結晶
TW430699B (en) * 1995-12-27 2001-04-21 Mitsubishi Material Silicon Co Single crystal pulling apparatus
TW503265B (en) * 1995-12-28 2002-09-21 Mitsubishi Material Silicon Single crystal pulling apparatus
JP2006069841A (ja) * 2004-09-02 2006-03-16 Sumco Corp 磁場印加式シリコン単結晶の引上げ方法
DE102005007655A1 (de) * 2005-02-19 2006-08-24 Sms Demag Ag Ofenanlage und Verfahren zum Einschmelzen von metallischen oder metallhaltigen Einsatzstoffen
US7704920B2 (en) * 2005-11-30 2010-04-27 Basf Catalysts Llc Pollutant emission control sorbents and methods of manufacture
US7578869B2 (en) * 2005-11-30 2009-08-25 Basf Catalysts Llc Methods of manufacturing bentonite pollution control sorbents
US7575629B2 (en) * 2005-11-30 2009-08-18 Basf Catalysts Llc Pollutant emission control sorbents and methods of manufacture
US7753992B2 (en) 2006-06-19 2010-07-13 Basf Corporation Methods of manufacturing mercury sorbents and removing mercury from a gas stream
US7572421B2 (en) * 2006-06-19 2009-08-11 Basf Catalysts Llc Mercury sorbents and methods of manufacture and use
US20090081092A1 (en) * 2007-09-24 2009-03-26 Xiaolin David Yang Pollutant Emission Control Sorbents and Methods of Manufacture and Use
US8685351B2 (en) 2007-09-24 2014-04-01 Basf Corporation Pollutant emission control sorbents and methods of manufacture and use
US8906823B2 (en) 2007-09-24 2014-12-09 Basf Corporation Pollutant emission control sorbents and methods of manufacture and use
US11434138B2 (en) 2017-10-27 2022-09-06 Kevin Allan Dooley Inc. System and method for manufacturing high purity silicon

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
GB1055059A (en) * 1963-11-27 1967-01-11 Mullard Ltd Improvements in crystal growing
US4200445A (en) * 1977-04-28 1980-04-29 Corning Glass Works Method of densifying metal oxides
US4352784A (en) * 1979-05-25 1982-10-05 Western Electric Company, Inc. Double crucible Czochralski crystal growth apparatus
US4456499A (en) * 1979-05-25 1984-06-26 At&T Technologies, Inc. Double crucible Czochralski crystal growth method
US4246064A (en) * 1979-07-02 1981-01-20 Western Electric Company, Inc. Double crucible crystal growing process
JPS5914440B2 (ja) * 1981-09-18 1984-04-04 住友電気工業株式会社 ＣａＡｓ単結晶への硼素のド−ピング方法
DE3316547C2 (de) * 1983-05-06 1985-05-30 Philips Patentverwaltung Gmbh, 2000 Hamburg Kalter Tiegel für das Erschmelzen nichtmetallischer anorganischer Verbindungen
JPS6259594A (ja) * 1985-09-11 1987-03-16 Sumitomo Electric Ind Ltd 結晶の引上げ方法
US5053359A (en) * 1989-03-24 1991-10-01 Pyromatics, Inc. Cristobalite reinforcement of high silica glass
CA1305909C (en) * 1987-06-01 1992-08-04 Michio Kida Apparatus and process for growing crystals of semiconductor materials
CA1306407C (en) * 1987-06-08 1992-08-18 Michio Kida Apparatus for growing crystals of semiconductor materials
US5037503A (en) * 1988-05-31 1991-08-06 Osaka Titanium Co., Ltd. Method for growing silicon single crystal
JPH02107587A (ja) * 1988-10-13 1990-04-19 Mitsubishi Metal Corp 半導体単結晶育成装置

Also Published As

Publication number Publication date
JPH0585880A (ja) 1993-04-06
EP0525765B1 (de) 1995-03-15
US5306474A (en) 1994-04-26
EP0525765A1 (de) 1993-02-03
JP3077273B2 (ja) 2000-08-14
DE69201693D1 (de) 1995-04-20

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