DE69007858D1 - Vorrichtung zur Herstellung von Silicium-Einkristallen. - Google Patents

Vorrichtung zur Herstellung von Silicium-Einkristallen.

Info

Publication number
DE69007858D1
DE69007858D1 DE90101806T DE69007858T DE69007858D1 DE 69007858 D1 DE69007858 D1 DE 69007858D1 DE 90101806 T DE90101806 T DE 90101806T DE 69007858 T DE69007858 T DE 69007858T DE 69007858 D1 DE69007858 D1 DE 69007858D1
Authority
DE
Germany
Prior art keywords
production
silicon single
single crystals
crystals
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE90101806T
Other languages
English (en)
Inventor
Yoshinobu Shima
Masanori Ohmura
Akira Ohtani
Kenji Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Engineering Corp
Original Assignee
NKK Corp
Nippon Kokan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NKK Corp, Nippon Kokan Ltd filed Critical NKK Corp
Application granted granted Critical
Publication of DE69007858D1 publication Critical patent/DE69007858D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B15/00—Drawing glass upwardly from the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE90101806T 1989-05-30 1990-01-30 Vorrichtung zur Herstellung von Silicium-Einkristallen. Expired - Lifetime DE69007858D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1136448A JPH035392A (ja) 1989-05-30 1989-05-30 シリコン単結晶の製造装置

Publications (1)

Publication Number Publication Date
DE69007858D1 true DE69007858D1 (de) 1994-05-11

Family

ID=15175347

Family Applications (1)

Application Number Title Priority Date Filing Date
DE90101806T Expired - Lifetime DE69007858D1 (de) 1989-05-30 1990-01-30 Vorrichtung zur Herstellung von Silicium-Einkristallen.

Country Status (7)

Country Link
US (1) US4957712A (de)
EP (1) EP0400266B1 (de)
JP (1) JPH035392A (de)
KR (1) KR920009566B1 (de)
CN (1) CN1018851B (de)
DE (1) DE69007858D1 (de)
FI (1) FI902336A0 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139750A (en) * 1989-10-16 1992-08-18 Nkk Corporation Silicon single crystal manufacturing apparatus
US5312600A (en) * 1990-03-20 1994-05-17 Toshiba Ceramics Co. Silicon single crystal manufacturing apparatus
JPH0825836B2 (ja) * 1990-04-27 1996-03-13 東芝セラミックス株式会社 シリコン単結晶の製造装置
JPH04317493A (ja) * 1991-04-15 1992-11-09 Nkk Corp シリコン単結晶の製造装置
JPH0585879A (ja) * 1991-09-04 1993-04-06 Mitsubishi Materials Corp 単結晶引上装置
US5284631A (en) * 1992-01-03 1994-02-08 Nkk Corporation Crucible for manufacturing single crystals
TW430699B (en) * 1995-12-27 2001-04-21 Mitsubishi Material Silicon Co Single crystal pulling apparatus
JP3533416B2 (ja) * 1996-02-06 2004-05-31 三菱住友シリコン株式会社 単結晶引上装置
US7635414B2 (en) * 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
CN100432023C (zh) * 2006-07-20 2008-11-12 西安超码科技有限公司 单晶硅拉制炉用热场炭/炭坩埚的制备方法
CN104451882A (zh) * 2014-12-19 2015-03-25 单县晶瑞光电有限公司 一种石榴石的生产工艺

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB939102A (en) * 1959-02-18 1963-10-09 Philco Corp Improvements in and relating to the production of crystals, and apparatus for use therein
DE2420899A1 (de) * 1974-04-30 1975-12-11 Wacker Chemitronic Verfahren zur herstellung von einkristallinem galliumarsenid
DE2454092A1 (de) * 1974-11-14 1976-05-26 Wacker Chemitronic Verfahren zum quantitativen entfernen von restschmelzen
DE2821481C2 (de) * 1978-05-17 1985-12-05 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze
US4242553A (en) * 1978-08-31 1980-12-30 Samuel Berkman Apparatus for use in the production of ribbon-shaped crystals from a silicon melt
JPS58130195A (ja) * 1982-01-27 1983-08-03 Toshiba Ceramics Co Ltd 単結晶シリコン引上装置
IN161924B (de) * 1984-10-29 1988-02-27 Westinghouse Electric Corp
JPS6395195A (ja) * 1986-10-08 1988-04-26 Toshiba Corp 結晶引上げ方法及び装置
US4847053A (en) * 1987-05-05 1989-07-11 Hughes Aircraft Company Growth of glass-clad single crystal fibers
CA1305909C (en) * 1987-06-01 1992-08-04 Michio Kida Apparatus and process for growing crystals of semiconductor materials
JPH0676274B2 (ja) * 1988-11-11 1994-09-28 東芝セラミックス株式会社 シリコン単結晶の製造装置

Also Published As

Publication number Publication date
US4957712A (en) 1990-09-18
KR900017934A (ko) 1990-12-20
EP0400266A1 (de) 1990-12-05
JPH035392A (ja) 1991-01-11
CN1018851B (zh) 1992-10-28
EP0400266B1 (de) 1994-04-06
KR920009566B1 (ko) 1992-10-19
FI902336A0 (fi) 1990-05-10
CN1047894A (zh) 1990-12-19

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Legal Events

Date Code Title Description
8332 No legal effect for de